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51. 发明申请

US20050287760A1 Method for fabricating high aspect ratio MEMS device with integrated circuit on the same substrate using post-CMOS process 失效
标题翻译：使用后CMOS工艺在同一衬底上制造具有集成电路的高纵横比MEMS器件的方法
公开(公告)号：US20050287760A1
公开(公告)日：2005-12-29
申请号：US11111344
申请日：2005-04-22
申请人： Guizhen Yan , Yong Zhu , Jie Fan , Xuesong Liu , Jian Zhou , Yangyuan Wang
发明人： Guizhen Yan , Yong Zhu , Jie Fan , Xuesong Liu , Jian Zhou , Yangyuan Wang
IPC分类号： H01L21/4763 , H01L21/76
CPC分类号： B81C1/00246 , B81C2203/0728 , H01L27/0617
摘要： The invention discloses a novel flexible, modular fabrication method for integrated high aspect ratio single crystal silicon microstructures designed and manufactured in a post conventional CMOS process (Post-CMOS). The method involves the standard circuits formation, the electrical isolation trenched etching and refilling, backside etching, interconnection formation, and structure releasing. Further, a method of tailoring the trench profile for refill the trench fully without void is also disclosed.
摘要翻译：本发明公开了一种用于在后常规CMOS工艺（后CMOS）中设计和制造的集成高宽比单晶硅微结构的新颖的柔性，模块化制造方法。该方法包括标准电路形成，电隔离沟槽蚀刻和再填充，背面蚀刻，互连形成和结构释放。此外，还公开了一种调整沟槽轮廓以在没有空隙的情况下完全填充沟槽的方法。

52. 发明授权

US6044981A Microfabricated filter with specially constructed channel walls, and containment well and capsule constructed with such filters 有权
标题翻译：具有专门构造的通道壁的微型过滤器，以及由这种过滤器构成的容纳井和胶囊
公开(公告)号：US6044981A
公开(公告)日：2000-04-04
申请号：US139883
申请日：1998-08-25
申请人： Wen-Hwa Chu , Mauro Ferrari
发明人： Wen-Hwa Chu , Mauro Ferrari
IPC分类号： A61K9/00 , A61K9/22 , A61K9/50 , A61K9/52 , B01D39/16 , B01D39/20 , B01D67/00 , B01D69/02 , B01D69/12 , B01D71/02 , B01J13/02 , B81B1/00 , B81C1/00 , C04B41/45 , C23C16/01 , G03F7/00 , B01D69/10 , B01D69/06 , C23F1/00
CPC分类号： G03F7/0015 , A61K9/0024 , A61K9/0097 , B01D39/1692 , B01D39/20 , B01D67/0058 , B01D67/0062 , B01D67/0072 , B01D67/0083 , B01D69/02 , B01D69/12 , B01D71/02 , B01J13/02 , B81B3/007 , B81C1/00087 , B81C1/00246 , C04B41/4582 , C23C16/01 , G03F7/00 , B01D2323/08 , B01D2323/10 , B01D2325/02 , B01D2325/04 , B81B2201/10 , B81C2201/014 , B81C2201/032 , B81C2203/0728 , B81C2203/075
摘要： Microfabricated filters utilizing a bulk substrate structure and a thin film structure and a method for constructing such filters. The pores of the filters are defined by spaces between the bulk substrate structure and the thin film structure and are of substantially uniform width, length and distribution. The width of the pores is defined by the thickness of a sacrificial layer and therefore may be smaller than the limit of resolution obtainable with photolithography. The filters provide enhanced mechanical strength, chemical inertness, biological compatibility, and throughput. The filters are constructed using relatively simple fabrication techniques. Also, microfabricated containment wells and capsules constructed with such filters for the immunological isolation of cell transplants and a method for constructing such containment wells and capsules. The pores of the wells and capsules are large enough to let a desired biologically-active molecular product through, while blocking the passage of all larger immunological molecules. The containment wells and capsules provide enhanced biological compatibility and useful life.
摘要翻译：利用大块基板结构和薄膜结构的微型滤波器及其构造方法。过滤器的孔由体基板结构和薄膜结构之间的空间限定，并且具有基本均匀的宽度，长度和分布。孔的宽度由牺牲层的厚度限定，因此可以小于通过光刻可获得的分辨率的极限。过滤器提供增强的机械强度，化学惰性，生物相容性和生产能力。使用相对简单的制造技术构造滤波器。而且，用这种用于免疫分离细胞移植的过滤器构造的微制造安全壳和胶囊以及用于构建这种安全壳和胶囊的方法。孔和胶囊的孔隙足够大以使期望的生物活性分子产物通过阻止所有较大免疫分子的通过。安全壳和胶囊提供增强的生物相容性和使用寿命。

53. 发明授权

US6012336A Capacitance pressure sensor 有权
标题翻译：电容式压力传感器
公开(公告)号：US6012336A
公开(公告)日：2000-01-11
申请号：US206693
申请日：1998-12-07
申请人： William P. Eaton , Bevan D. Staple , James H. Smith
发明人： William P. Eaton , Bevan D. Staple , James H. Smith
IPC分类号： B81B3/00 , B81B7/00 , B81B7/02 , G01L9/00 , G01L9/16
CPC分类号： G01L9/0073 , B81C1/00246 , B81B2201/0264 , B81C2203/0728
摘要： A microelectromechanical (MEM) capacitance pressure sensor integrated with electronic circuitry on a common substrate and a method for forming such a device are disclosed. The MEM capacitance pressure sensor includes a capacitance pressure sensor formed at least partially in a cavity etched below the surface of a silicon substrate and adjacent circuitry (CMOS, BiCMOS, or bipolar circuitry) formed on the substrate. By forming the capacitance pressure sensor in the cavity, the substrate can be planarized (e.g. by chemical-mechanical polishing) so that a standard set of integrated circuit processing steps can be used to form the electronic circuitry (e.g. using an aluminum or aluminum-alloy interconnect metallization).
摘要翻译：公开了一种与公共衬底上的电子电路集成的微机电（MEM）电容压力传感器和用于形成这种器件的方法。 MEM电容压力传感器包括至少部分地形成在蚀刻在硅衬底的表面下方的空腔中的电容压力传感器和形成在衬底上的相邻电路（CMOS，BiCMOS或双极电路）。通过在空腔中形成电容压力传感器，衬底可以被平坦化（例如通过化学机械抛光），使得可以使用标准的集成电路处理步骤来形成电子电路（例如使用铝或铝合金互连金属化）。

54. 发明授权

US5893974A Microfabricated capsules for immunological isolation of cell transplants 失效
标题翻译：用于免疫分离细胞移植的微型制剂胶囊
公开(公告)号：US5893974A
公开(公告)日：1999-04-13
申请号：US254330
申请日：1994-06-06
申请人： Christopher G. Keller , Mauro Ferrari
发明人： Christopher G. Keller , Mauro Ferrari
IPC分类号： A61F2/02 , A61K9/00 , A61K9/50 , A61K9/52 , B01D39/16 , B01D39/20 , B01D67/00 , B01D69/02 , B01D69/12 , B01D71/02 , B01J13/02 , B81B1/00 , B81C1/00 , C04B41/45 , C23C16/01 , G03F7/00 , B01D69/10
CPC分类号： B01D39/1692 , A61K9/0024 , A61K9/0097 , B01D39/20 , B01D67/0058 , B01D67/0062 , B01D67/0072 , B01D67/0083 , B01D69/02 , B01D69/12 , B01D71/02 , B01J13/02 , B81B1/002 , B81B1/004 , B81C1/00246 , B81C99/0085 , C04B41/4582 , C23C16/01 , G03F7/00 , G03F7/0015 , B01D2323/08 , B01D2325/04 , B81C2201/032 , B81C2203/0728 , Y10T428/249969
摘要： The present invention provides a capsule made of a biologically compatible material with sufficient mechanical strength to form a very thin membrane shell having at least a region with approximately uniformly sized and spaced holes or pores that are large enough to let a desired biologically active molecular product through, while blocking the passage of all larger immunological molecules. The present invention thus provides an immunological isolation of cell transplants contained therein. The present invention also provides a free standing thin film structure that may be used as a component of such a capsule and method for the fabrication of such component and capsules.
摘要翻译：本发明提供一种由具有足够的机械强度的生物相容性材料制成的胶囊，以形成非常薄的膜壳，其具有至少一个具有大致均匀尺寸和间隔开的孔或孔的区域，其足够大以使期望的生物活性分子产物通过，同时阻止所有较大免疫分子的通过。因此，本发明提供对其中包含的细胞移植的免疫学分离。本发明还提供可用作这种胶囊的组分的自立式薄膜结构和用于制造这种组分和胶囊的方法。

55. 发明授权

US5783340A Method for photolithographic definition of recessed features on a semiconductor wafer utilizing auto-focusing alignment 失效
标题翻译：利用自动聚焦对准在半导体晶片上的凹版特征的光刻定义方法
公开(公告)号：US5783340A
公开(公告)日：1998-07-21
申请号：US903985
申请日：1997-07-31
申请人： Anthony J. Farino , Stephen Montague , Jeffry J. Sniegowski , James H. Smith , Paul J. McWhorter
发明人： Anthony J. Farino , Stephen Montague , Jeffry J. Sniegowski , James H. Smith , Paul J. McWhorter
IPC分类号： B81B3/00 , B81B7/00 , B81B7/02 , G03F7/09 , G03F7/207 , G03F9/00 , G01B11/00
CPC分类号： G03F7/094 , B81C1/00246 , G03F9/70 , B81C2203/0728 , G01P2015/0828
摘要： A method is disclosed for photolithographically defining device features up to the resolution limit of an auto-focusing projection stepper when the device features are to be formed in a wafer cavity at a depth exceeding the depth of focus of the stepper. The method uses a focusing cavity located in a die field at the position of a focusing light beam from the auto-focusing projection stepper, with the focusing cavity being of the same depth as one or more adjacent cavities wherein a semiconductor device is to be formed. The focusing cavity provides a bottom surface for referencing the focusing light beam and focusing the stepper at a predetermined depth below the surface of the wafer, whereat the device features are to be defined. As material layers are deposited in each device cavity to build up a semiconductor structure such as a microelectromechanical system (MEMS) device, the same material layers are deposited in the focusing cavity, raising the bottom surface and re-focusing the stepper for accurately defining additional device features in each succeeding material layer. The method is especially applicable for forming MEMS devices within a cavity or trench and integrating the MEMS devices with electronic circuitry fabricated on the wafer surface.
摘要翻译：公开了一种用于光刻地限定器件特征的方法，直到在超过步进器的焦深深度的晶片腔中形成器件特征时，自动聚焦投影步进器的分辨率极限。该方法使用位于来自自动聚焦投影步进机的聚焦光束的位置处的模场中的聚焦腔，其中聚焦腔具有与一个或多个相邻空腔相同的深度，其中将形成半导体器件。聚焦腔提供用于参考聚焦光束的底表面，并将步进器聚焦在晶片表面下方的预定深度处，其中将限定器件特征。当材料层沉积在每个器件腔中以建立诸如微机电系统（MEMS）器件的半导体结构时，相同的材料层沉积在聚焦腔中，提高底表面并重新聚焦步进器以准确地限定附加的每个后续材料层中的器件特征。该方法特别适用于在腔或沟槽内形成MEMS器件，并将MEMS器件与在晶片表面上制造的电子电路集成。

56. 发明授权

US5554875A Semiconductor device with force and/or acceleration sensor 失效
标题翻译：具有力和/或加速度传感器的半导体器件
公开(公告)号：US5554875A
公开(公告)日：1996-09-10
申请号：US486156
申请日：1995-06-07
申请人： Siegbert Hartauer
发明人： Siegbert Hartauer
IPC分类号： B81B3/00 , G01L1/18 , G01P15/08 , G01P15/12 , G01P15/125 , H01L29/82
CPC分类号： B81C1/00246 , G01L1/18 , G01P15/0802 , G01P15/123 , G01P15/125 , B81B2201/0235 , B81B2203/0109 , B81B2203/0315 , B81C2201/0136 , B81C2201/014 , B81C2203/0728 , B81C2203/0735
摘要： A semiconductor device with a force and/or acceleration sensor (12), which has a spring-mass system (14, 16) responsive to the respective quantity to be measured and whose mass (16) bears via at least one resilient support element (14) on a semiconductor substrate (20). The semiconductor substrate (20) and the spring-mass system (14, 16) are integral components of a monocrystalline semiconductor crystal (10) with a IC-compatible structure. The three-dimensional structural form of the spring-mass system (12) is produced by anisotropic semiconductor etching, defined P/N junctions of the semiconductor layer arrangement functioning as etch stop means in order to more particularly create a gap (22) permitting respective movement of the mass (16) between the mass (16) and the semiconductor substrate (20).
摘要翻译：一种具有力和/或加速度传感器（12）的半导体器件，其具有响应于待测量的相应量的弹簧质量系统（14,16），并且其质量（16）经由至少一个弹性支撑元件（ 14）在半导体衬底（20）上。半导体衬底（20）和弹簧质量系统（14,16）是具有IC兼容结构的单晶半导体晶体（10）的组成部分。通过各向异性半导体蚀刻制造弹簧质量体系（12）的三维结构形式，作为蚀刻停止装置的半导体层布置的限定的P / N结，以更具体地形成允许相应的间隙（22）质量块（16）和半导体衬底（20）之间的质量块（16）的移动。

57. 发明授权

US09994439B2 Pressure sensor, manufacturing method of pressure sensor, altimeter, electronic apparatus, and moving object 有权
公开(公告)号：US09994439B2
公开(公告)日：2018-06-12
申请号：US15417674
申请日：2017-01-27
申请人： Seiko Epson Corporation
发明人： Yusuke Matsuzawa , Takuya Kinugawa
IPC分类号： B81B3/00 , G01C5/06 , G01L9/00
CPC分类号： B81B3/001 , B81B2201/0264 , B81B2207/015 , B81C2203/0728 , G01C5/06 , G01L9/0054
摘要： A pressure sensor has a substrate having a diaphragm, a cavity portion that is positioned on one side of the diaphragm, and a ceiling portion that is disposed opposite to the diaphragm via the cavity portion, and unevenness is formed on a surface of the substrate facing the cavity portion. In addition, the unevenness has a plurality of recessed portions.

58. 发明申请

US20180111824A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20180111824A1
公开(公告)日：2018-04-26
申请号：US15333520
申请日：2016-10-25
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD
发明人： TZU-HENG WU , CHIA-HUA CHU , YI-HENG TSAI , CHENG SAN CHOU , CHEN HSIUNG YANG
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： B81B7/008 , B81B2207/096 , B81B2207/115 , B81C1/00246 , B81C2201/053 , B81C2203/0728
摘要： A semiconductor structure includes a first substrate, a second substrate disposed over the first substrate, and including a first surface, a second surface opposite to the first surface, a via portion extending between the first surface and the second surface, a first through hole and a second through hole, and a device disposed over the second surface, and including a dielectric layer, a backplate at least partially exposed from the dielectric layer and a membrane at least partially exposed from the dielectric layer and disposed between the backplate and the first substrate, wherein the via portion is disposed within the second through hole, and the dielectric layer is bonded with the second substrate, and the device is electrically connected to the first substrate through the via portion.

59. 发明申请

US20160043108A1 Semiconductor Structure with Multiple Active Layers in an SOI Wafer 审中-公开
标题翻译：半导体结构在SOI晶圆中具有多个有源层
公开(公告)号：US20160043108A1
公开(公告)日：2016-02-11
申请号：US14454262
申请日：2014-08-07
申请人： Silanna Semiconductor U.S.A., Inc.
发明人： Stephen A. Fanelli
IPC分类号： H01L27/12 , H01L21/84 , B81C3/00 , B81B7/00 , B81B7/02 , H01L21/762 , B81C1/00
CPC分类号： H01L27/1207 , B81C1/00238 , B81C1/00246 , B81C2203/0728 , B81C2203/0735 , B81C2203/0778 , B81C2203/0792 , H01L21/76251 , H01L21/8221 , H01L21/84 , H01L23/481 , H01L27/0688 , H01L27/1203 , H01L2224/73265 , H01L2924/13091
摘要： An semiconductor on insulator wafer has an insulator layer between a substrate layer and a semiconductor layer. A first active layer is formed in and on the semiconductor layer. A second active layer is formed in and on the substrate layer. In some embodiments, a handle wafer is bonded to the semiconductor on insulator wafer, and the substrate layer is thinned before forming the second active layer. In some embodiments, a third active layer may be formed in the substrate of the handle wafer. In some embodiments, the first and second active layers include a MEMS device in one of these layers and a CMOS device in the other.
摘要翻译：绝缘体上半导体晶片在衬底层和半导体层之间具有绝缘体层。第一有源层形成在半导体层中和半导体层上。第二有源层形成在衬底层中和衬底层上。在一些实施例中，把手晶片结合到绝缘体上半导体晶片上，并且在形成第二有源层之前将衬底层变薄。在一些实施例中，可以在处理晶片的衬底中形成第三有源层。在一些实施例中，第一和第二有源层包括这些层之一中的MEMS器件和另一个中的CMOS器件。

60. 发明申请

US20140162392A1 PRODUCTION METHOD FOR A SUSPENDED STRUCTURE COMPONENT AND A TRANSISTOR CO-INTEGRATED ON A SAME SUBSTRATE 有权
标题翻译：悬挂结构部件和共同组合在同一基板上的晶体管的生产方法
公开(公告)号：US20140162392A1
公开(公告)日：2014-06-12
申请号：US14097733
申请日：2013-12-05
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
发明人： Eric Ollier , Julien Arcamone , Mylene Savoye
IPC分类号： B81C1/00
CPC分类号： B81C1/00246 , B81C1/0019 , B81C2203/0728 , B81C2203/0771 , H01L27/0617 , H01L27/1203
摘要： A method of forming a microelectronic device comprising, on a same substrate, at least one electro-mechanical component provided with a suspended structure and at least one transistor, the method comprising a step of release of the suspended structure from the electromechanical component after having formed metal interconnection levels of components.
摘要翻译：一种形成微电子器件的方法，在同一衬底上包括至少一个设置有悬置结构的电子机械部件和至少一个晶体管，所述方法包括在已经形成之后将所述悬浮结构从机电部件释放的步骤金属互连级别的组件。

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