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51. 发明授权

US09975766B2 MEMS-based method for manufacturing sensor 有权
公开(公告)号：US09975766B2
公开(公告)日：2018-05-22
申请号：US15312146
申请日：2015-05-05
申请人： CSMC TECHNOLOGIES FAB1 CO., LTD.
发明人： Yonggang Hu , Guoping Zhou
IPC分类号： B81C1/00
CPC分类号： B81C1/00619 , B81C1/00 , B81C2201/0133 , B81C2201/0142
摘要： An MEMS-based method for manufacturing a sensor comprises the steps of: forming a shallow channel (120) and a support beam (140) on a front surface of a substrate (100); forming a first epitaxial layer (200) on the front surface of the substrate (100) to seal the shallow channel (120); forming a suspended mesh structure (160) below the first epitaxial layer (200); and forming a deep channel (180) at a position on a back surface of the substrate (100) corresponding to the shallow channel (120), so that the shallow channel (120) is in communication with the deep channel (180). In the Method of manufacturing a MEMS-based sensor, when a shallow channel is formed on a front surface, a support beam of a mass block is formed, so the etching of a channel is easier to control, the process is more precise, and the uniformity and the homogeneity of the formed support beam are better.

52. 发明授权

US09953734B2 Microstructure manufacturing method 有权
公开(公告)号：US09953734B2
公开(公告)日：2018-04-24
申请号：US15007773
申请日：2016-01-27
申请人： CANON KABUSHIKI KAISHA
发明人： Shinan Wang , Takashi Nakamura , Takayuki Teshima , Yutaka Setomoto , Shinichiro Watanabe
IPC分类号： G21K1/06 , G01T1/29 , B81C1/00 , H01L21/311 , H01L21/3205 , G01N23/20
CPC分类号： G21K1/06 , B81C1/00619 , G01N23/20075 , G01T1/295 , H01L21/31111 , H01L21/32051
摘要： A microstructure manufacturing method includes forming a first insulating film on an Si substrate, exposing an Si surface by removing a part of the first insulating film, forming a recessed portion by etching the Si substrate from the exposed Si surface, forming a second insulating film on a sidewall and a bottom of the recessed portion, forming an Si exposed surface by removing at least a part of the second insulating film formed on the bottom of the recessed portion, and filling the recessed portion with a metal from the Si exposed surface by electrolytic plating.

53. 发明申请

US20180072566A1 PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES 审中-公开
公开(公告)号：US20180072566A1
公开(公告)日：2018-03-15
申请号：US15802789
申请日：2017-11-03
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Christopher V. JAHNES , Anthony K. STAMPER
IPC分类号： H01P1/10 , B81C1/00 , H01H59/00 , H01L41/113 , H01H57/00 , G06F17/50 , B81B3/00 , H01H1/00
CPC分类号： B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
摘要： A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

54. 发明申请

US20170158490A1 PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES 有权
公开(公告)号：US20170158490A1
公开(公告)日：2017-06-08
申请号：US15437727
申请日：2017-02-21
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Christopher V. JAHNES , Anthony K. STAMPER
IPC分类号： B81B3/00 , G06F17/50 , B81C1/00
CPC分类号： B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
摘要： A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

55. 发明授权

US09663355B2 Method and structure for creating cavities with extreme aspect ratios 有权
公开(公告)号：US09663355B2
公开(公告)日：2017-05-30
申请号：US14835001
申请日：2015-08-25
申请人： Infineon Technologies Dresden GmbH
发明人： Thoralf Kautzsch , Heiko Froehlich , Mirko Vogt , Maik Stegemann
IPC分类号： B32B3/24 , B81C1/00 , G01N33/487 , G01N27/414 , G01N27/447 , H01L21/306 , H01L29/06
CPC分类号： B81C1/00619 , B81C1/00047 , B81C1/00476 , G01N27/414 , G01N27/4473 , G01N33/48721 , H01L21/30604 , H01L29/06
摘要： Embodiments relate to structures, systems and methods for more efficiently and effectively etching sacrificial and other layers in substrates and other structures. In embodiments, a substrate in which a sacrificial layer is to be removed to, e.g., form a cavity comprises an etch dispersion system comprising a trench, channel or other structure in which etch gas or another suitable gas, fluid or substance can flow to penetrate the substrate and remove the sacrificial layer. The trench, channel or other structure can be implemented along with openings or other apertures formed in the substrate, such as proximate one or more edges of the substrate, to even more quickly disperse etch gas or some other substance within the substrate.

56. 发明申请

US20170129767A1 SUBSTRATE STRUCTURE, SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME 审中-公开
公开(公告)号：US20170129767A1
公开(公告)日：2017-05-11
申请号：US15411957
申请日：2017-01-20
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
发明人： Tsai-Hao HUNG , Shih-Chi KUO , Tsung-Hsien LEE , Tao-Cheng LIU
IPC分类号： B81B1/00 , B81C1/00
CPC分类号： B81B1/004 , B81B2201/0235 , B81B2201/0242 , B81B2201/0257 , B81B2203/0127 , B81B2203/0163 , B81B2203/0315 , B81B2203/04 , B81B2207/012 , B81C1/00087 , B81C1/00619 , B81C2201/0104 , B81C2201/0108 , B81C2201/0132 , B81C2203/0118
摘要： The present disclosure provides a substrate structure for a micro electro mechanical system (MEMS) device. The substrate structure includes a cap and a micro electro mechanical system (MEMS) substrate. The cap has a cavity, and the MEMS substrate is disposed on the cap. The MEMS substrate has a plurality of through holes exposing the cavity, and an aspect ratio of the through hole is greater than 30.

57. 发明申请

US20160355392A1 PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES 审中-公开
公开(公告)号：US20160355392A1
公开(公告)日：2016-12-08
申请号：US15238854
申请日：2016-08-17
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Anthony K. Stamper , John G. Twombly
IPC分类号： B81B3/00 , H01H59/00 , B81C1/00 , G06F17/50
CPC分类号： B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
摘要： A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

58. 发明授权

US09507142B2 Precise definition of transducer electrodes 有权
标题翻译：传感器电极的精确定义
公开(公告)号：US09507142B2
公开(公告)日：2016-11-29
申请号：US14410211
申请日：2013-06-12
申请人： SILEX MICROSYSTEMS AB
发明人： Peter Agren
IPC分类号： G02B26/08 , H01L23/48 , B81B3/00 , B81C1/00 , G01D5/24 , H01L23/522
CPC分类号： G02B26/0841 , B81B3/0021 , B81B3/0045 , B81B2201/02 , B81B2201/03 , B81B2203/04 , B81C1/00357 , B81C1/00619 , G01D5/24 , G02B26/085 , H01L23/481 , H01L23/5225 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device, includes a semiconductor substrate (10) having a first (12a) and a second (12b) side. There is provided at least one via (15) extending through the substrate (10) having first (16a) and second (16b) end surfaces, the first end surface (16a) constituting a transducer electrode for interacting with a movable element (14) arranged at the first side (12a) of the substrate (10). A shield (17) is provided on and covers at least part of the first side (12a) of the substrate (10), the shield/mask (17) including a conductive layer (19a) and an insulating material layer (19b) provided between the substrate (10) and the conductive layer (19a). The mask has an opening (18) exposing only a part of the first surface (16a) of the via. Preferably the opening (18) in the mask is precisely aligned with the movable element, and the area of the opening is accurately defined.
摘要翻译：半导体器件包括具有第一（12a）和第二（12b）侧的半导体衬底（10）。提供至少一个通过具有第一（16a）和第二（16b）端面的基板延伸的通孔（15），第一端面（16a）构成用于与可移动元件（14）相互作用的换能器电极，布置在基板（10）的第一侧（12a）处。在衬底（10）的第一侧（12a）的至少一部分上设置有屏蔽（17），所述屏蔽/掩模（17）包括导电层（19a）和绝缘材料层（19b）在所述基板（10）和所述导电层（19a）之间。掩模具有仅露出通孔的第一表面（16a）的一部分的开口（18）。优选地，掩模中的开口（18）与可移动元件精确对准，并且开口的区域被精确地限定。

59. 发明申请

US20160244321A1 PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES 有权
标题翻译：平面CAVITY MEMS及相关结构，制造方法和设计结构
公开(公告)号：US20160244321A1
公开(公告)日：2016-08-25
申请号：US15148130
申请日：2016-05-06
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Christopher V. JAHNES , Anthony K. STAMPER
IPC分类号： B81B3/00 , H01H59/00 , H01H1/00 , B81C1/00
CPC分类号： B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
摘要： A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
摘要翻译：形成微机电系统（MEMS）的方法包括在MEMS的空腔内的第一绝缘体层上形成下电极。该方法还包括在下部电极的顶部上形成上部电极，该上部电极至少部分地与下部电极接触。下电极和上电极的形成包括调节下电极和上电极的金属体积以改变光束弯曲。

60. 发明申请

US20160163408A1 MICROSTRUCTURE MANUFACTURING METHOD 审中-公开
公开(公告)号：US20160163408A1
公开(公告)日：2016-06-09
申请号：US15007773
申请日：2016-01-27
申请人： CANON KABUSHIKI KAISHA
发明人： Shinan Wang , Takashi Nakamura , Takayuki Teshima , Yutaka Setomoto , Shinichiro Watanabe
IPC分类号： G21K1/06 , G01N23/20
CPC分类号： G21K1/06 , B81C1/00619 , G01N23/20075 , G01T1/295 , H01L21/31111 , H01L21/32051
摘要： A microstructure manufacturing method includes forming a first insulating film on an Si substrate, exposing an Si surface by removing a part of the first insulating film, forming a recessed portion by etching the Si substrate from the exposed Si surface, forming a second insulating film on a sidewall and a bottom of the recessed portion, forming an Si exposed surface by removing at least a part of the second insulating film formed on the bottom of the recessed portion, and filling the recessed portion with a metal from the Si exposed surface by electrolytic plating.

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