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51. 发明授权

US6159862A Semiconductor processing method and system using C.sub.5 F.sub.8 失效
标题翻译：半导体处理方法和系统采用C5F8
公开(公告)号：US6159862A
公开(公告)日：2000-12-12
申请号：US87848
申请日：1998-06-01
申请人： Masahiro Yamada , Youbun Ito , Kouichiro Inazawa , Abron Toure , Kunihiko Hinata , Hiromi Sakima
发明人： Masahiro Yamada , Youbun Ito , Kouichiro Inazawa , Abron Toure , Kunihiko Hinata , Hiromi Sakima
IPC分类号： H01L21/311 , H01L21/768 , H01L21/30
CPC分类号： H01L21/76802 , H01L21/31116 , H01L21/76804 , H01L21/7681 , H01L21/76897 , Y02C20/30 , Y02P70/605
摘要： A method and system for processing a substrate in the presence of high purity C.sub.5 F.sub.8. When processing oxides and dielectrics in a gas plasma processing system, C.sub.5 F.sub.8 is used in combination with a carrier gas (e.g., Ar) and one or more of CO and O.sub.2. When using a silicon nitride (Si.sub.x N.sub.y) layer as an etch stop, effective etching is performed due to the selectivity of oxides versus silicon nitride. The method is used when etching down to self-aligning contacts and other layers. The method may be practiced with or without using an anti-reflective coating underneath the photoresist layer.
摘要翻译：在高纯度C5F8存在下处理基材的方法和系统。当在气体等离子体处理系统中处理氧化物和电介质时，C5F8与载气（例如Ar）和CO和O 2中的一种或多种组合使用。当使用氮化硅（SixNy）层作为蚀刻停止时，由于氧化物对氮化硅的选择性而进行有效的蚀刻。当蚀刻到自对准触点和其他层时，使用该方法。可以使用或不使用光致抗蚀剂层下方的抗反射涂层来实施该方法。

52. 发明授权

US5960562A Processing apparatus of processing wafer sheets 失效
标题翻译：处理晶片片的处理装置
公开(公告)号：US5960562A
公开(公告)日：1999-10-05
申请号：US877565
申请日：1997-06-17
申请人： Tatsuya Nishida , Kenji Miyachi , Syujiro Oka
发明人： Tatsuya Nishida , Kenji Miyachi , Syujiro Oka
IPC分类号： H01L21/304 , H01L21/00 , F26B13/10
CPC分类号： H01L21/67034 , Y10S134/902 , Y10S414/135 , Y10S414/14 , Y10T29/41
摘要： A processing apparatus of the invention includes a rotary processing part for rotating and drying plural sheets of objects to be processed collectively in order to allow the object to be rotated immediately after they are accommodated in the rotary processing part and a balance adjusting mechanism for adjusting balance of the rotary processing part by moving counterweights in accordance with the number of the objects. Further the processing apparatus further includes a counter for counting the number of the objects accommodated in the rotary processing part and a control unit for controlling the balance adjusting operation of the balance adjusting mechanism in accordance with a predetermined relationship between the number of objects and the respective positions of the counterweights.
摘要翻译：本发明的处理装置包括旋转处理部分，用于一体旋转和干燥待处理的多个物体，以允许物体在容纳在旋转处理部分中之后立即旋转，以及用于调节平衡的平衡调节机构的旋转处理部件通过根据物体的数量移动配重。此外，处理装置还包括用于对容纳在旋转处理部分中的物体的数量进行计数的计数器和用于根据物体数量与相应物体之间的预定关系来控制平衡调节机构的平衡调节操作的控制单元配重的位置。

53. 发明授权

US5769952A Reduced pressure and normal pressure treatment apparatus 失效
标题翻译：减压和常压处理设备
公开(公告)号：US5769952A
公开(公告)日：1998-06-23
申请号：US842833
申请日：1997-04-17
申请人： Mitsuaki Komino
发明人： Mitsuaki Komino
IPC分类号： B65G49/07 , C23C16/44 , C23C16/54 , F16K51/02 , H01L21/00 , H01L21/677 , C23C16/00
CPC分类号： H01L21/67126 , C23C16/4404 , C23C16/54 , F16K51/02 , H01L21/67745 , Y10T137/599
摘要： A reduced pressure treatment unit comprising a plurality of treatment chambers conducting reduced pressure process treatment of a treatment object (wafer) and a normal pressure treatment unit conducting normal pressure process treatment of the treatment object, which are connected by a load lock chamber. The reduced pressure treatment unit comprises a plurality of reduced pressure process treatment chambers connected by means of a gate valve to a reduced pressure transport chamber equipped with a robot arm. The normal pressure treatment unit comprises a plurality of normal pressure process treatment chambers disposed in the vicinity of a robot arm. The load lock chamber is disposed at a position where the transport ranges of the two robot arms overlap. Also, the gate valve opening and closing the transport opening between the load lock and treatment chambers comprises a surface layer portion exposed to the atmosphere within the treatment chamber and a rear base portion whereby the surface layer portion is freely attached and removed with respect to the base portion by, e.g., screws, thus enabling independent replacement of the surface layer portion.
摘要翻译：一种减压处理单元，包括多个处理室，对处理对象（晶片）进行减压处理处理，以及通过负载锁定室连接的对处理对象进行常压处理处理的常压处理单元。减压处理单元包括通过闸阀连接到配备有机器人臂的减压输送室的多个减压处理室。常压处理单元包括设置在机器人手臂附近的多个常压处理室。负载锁定室设置在两个机器人臂的输送范围重叠的位置。此外，打开和关闭装载锁和处理室之间的输送开口的闸阀包括暴露于处理室内的大气的表面层部分和后基部，从而使表面层部分相对于所述表面层部分自由地附接和移除基部分，例如通过螺丝，从而能够独立地更换表面层部分。

54. 发明授权

US5028791A Electron beam excitation ion source 失效
标题翻译：电子束激发离子源
公开(公告)号：US5028791A
公开(公告)日：1991-07-02
申请号：US486256
申请日：1990-02-28
申请人： Akira Koshiishi , Kohei Kawamura , Masahiko Matsudo , Naoki Takayama
发明人： Akira Koshiishi , Kohei Kawamura , Masahiko Matsudo , Naoki Takayama
IPC分类号： H01J27/08 , H01J27/20
CPC分类号： H01J27/08 , H01J27/20
摘要： An electron beam excitation ion source comprises a housing having an ion generation chamber therein. A discharge gas and an accelerated electrons are introduced into the ion generation chamber, causing the accelerated electrons to collide against the discharge gas to generate a plasma containing ions in the ion generation chamber. The housing includes an ion extraction port through which the ions are extracted from the ion generation chamber outside the housing and an electron reflecting member exposed in the ion generation chamber to reflect the electrons.
摘要翻译：电子束激发离子源包括其中具有离子产生室的壳体。放电气体和加速的电子被引入到离子产生室中，导致加速的电子与放电气体碰撞，以产生离子产生室中含有离子的等离子体。壳体包括离子提取端口，离子从壳体外部的离子产生室提取出来，而电子反射部件暴露在离子产生室中以反射电子。

55. 发明授权

US3117862A Alloys for electromechanical devices and precision instruments 失效
标题翻译：机电设备和精密仪器用合金
公开(公告)号：US3117862A
公开(公告)日：1964-01-14
申请号：US16454562
申请日：1962-01-05
申请人： INT NICKEL CO
发明人： ALFRED CLARK CHARLES
IPC分类号： C22C38/50
CPC分类号： C22C38/50

56. 发明授权

US09921089B2 Flow rate range variable type flow rate control apparatus 有权
公开(公告)号：US09921089B2
公开(公告)日：2018-03-20
申请号：US15171333
申请日：2016-06-02
申请人： Fujikin Incorporated , National University Corporation Tohoku University , Tokyo Electron Ltd.
发明人： Tadahiro Ohmi , Masahito Saito , Shoichi Hino , Tsuyoshi Shimazu , Kazuyuki Miura , Kouji Nishino , Masaaki Nagase , Katsuyuki Sugita , Kaoru Hirata , Ryousuke Dohi , Takashi Hirose , Tsutomu Shinohara , Nobukazu Ikeda , Tomokazu Imai , Toshihide Yoshida , Hisashi Tanaka
IPC分类号： G05D7/06 , G01F1/684 , G01F1/36 , G01F5/00 , G01F7/00 , G01F1/40
CPC分类号： G01F1/6847 , G01F1/363 , G01F1/40 , G01F5/005 , G01F7/005 , G05D7/0641 , G05D7/0652 , Y10T137/0379 , Y10T137/7759 , Y10T137/776 , Y10T137/7761 , Y10T137/8593 , Y10T137/86734 , Y10T137/86815 , Y10T137/87265 , Y10T137/87298 , Y10T137/87306 , Y10T137/87314 , Y10T137/87354 , Y10T137/8741 , Y10T137/87499 , Y10T137/87539 , Y10T137/87684
摘要： A pressure type flow rate control apparatus is provided wherein flow rate of fluid passing through an orifice is computed as Qc=KP1 (where K is a proportionality constant) or as Qc=KP2m (P1-P2)n (where K is a proportionality constant, m and n constants) by using orifice upstream side pressure P1 and/or orifice downstream side pressure P2. A fluid passage between the downstream side of a control valve and a fluid supply pipe of the pressure type flow rate control apparatus comprises at least 2 fluid passages in parallel, and orifices having different flow rate characteristics are provided for each of these fluid passages, wherein fluid in a small flow quantity area flows to one orifice for flow control of fluid in the small flow quantity area, while fluid in a large flow quantity area flows to the other orifice for flow control of fluid in the large flow quantity area.

57. 发明授权

US09010369B2 Flow rate range variable type flow rate control apparatus 有权
标题翻译：流量范围可变型流量控制装置
公开(公告)号：US09010369B2
公开(公告)日：2015-04-21
申请号：US13763178
申请日：2013-02-08
申请人： Fujikin Incorporated , National University Corporation Tohoku University , Tokyo Electron Ltd.
发明人： Tadahiro Ohmi , Masahito Saito , Shoichi Hino , Tsuyoshi Shimazu , Kazuyuki Miura , Kouji Nishino , Masaaki Nagase , Katsuyuki Sugita , Kaoru Hirata , Ryousuke Dohi , Takashi Hirose , Tsutomu Shinohara , Nobukazu Ikeda , Tomokazu Imai , Toshihide Yoshida , Hisashi Tanaka
IPC分类号： G05D7/06 , G01F1/36 , G01F1/684 , G01F5/00 , G01F7/00
CPC分类号： G05D7/0641 , G01F1/363 , G01F1/6842 , G01F1/6847 , G01F5/005 , G01F7/005 , G05D7/0635 , G05D7/0647 , G05D23/1927 , Y10T137/0379 , Y10T137/7759 , Y10T137/776 , Y10T137/8593 , Y10T137/86734 , Y10T137/86815 , Y10T137/87265 , Y10T137/87314 , Y10T137/8741 , Y10T137/87499 , Y10T137/87684
摘要： A pressure type flow rate control apparatus is provided wherein flow rate of fluid passing through an orifice is computed as Qc=KP1 (where K is a proportionality constant) or as Qc=KP2m (P1−P2)n (where K is a proportionality constant, m and n constants) by using orifice upstream side pressure P1 and/or orifice downstream side pressure P2. A fluid passage between the downstream side of a control valve and a fluid supply pipe of the pressure type flow rate control apparatus comprises at least 2 fluid passages in parallel, and orifices having different flow rate characteristics are provided for each of these fluid passages, wherein fluid in a small flow quantity area flows to one orifice for flow control of fluid in the small flow quantity area, while fluid in a large flow quantity area flows to the other orifice for flow control of fluid in the large flow quantity area.
摘要翻译：提供一种压力式流量控制装置，其中通过孔口的流体流量计算为Qc = KP1（其中K是比例常数）或Qc = KP2m（P1-P2）n（其中K是比例常数，m和n常数）通过使用孔口上游侧压力P1和/或孔口下游侧压力P2。控制阀的下游侧和压力式流量控制装置的流体供给管之间的流体通道平行地包括至少2个流体通道，并且为每个这些流体通道设置具有不同流量特性的孔，其中小流量区域中的流体流向一个孔，用于在小流量区域中的流体的流量控制，而大流量区域中的流体流向另一个孔口，用于大流量区域中的流体的流量控制。

58. 发明授权

US08092137B2 Substrate transfer apparatus and method for controlling down flow 有权
标题翻译：底物转运装置及控制下流的方法
公开(公告)号：US08092137B2
公开(公告)日：2012-01-10
申请号：US12284748
申请日：2008-09-24
申请人： Motoki Miyasaka
发明人： Motoki Miyasaka
IPC分类号： H01L21/677
CPC分类号： H01L21/67017 , H01L21/67766 , H01L21/67778 , Y10S414/135
摘要： The present invention relates to an apparatus for transferring a substrate through a gate for loading and unloading is provided, and includes a transfer chamber having the gate for loading and unloading the substrate, a transfer system, which is able to move up and down in the transfer chamber and transfers the substrate by accessing each gate, an adjustment section for a gas down flow, which produces the gas down flow in the transfer chamber and is able to adjust a speed of the gas down flow, and a control section for controlling the speed of the gas down flow using the movement speed of the substrate.
摘要翻译：本发明涉及一种用于通过用于装载和卸载的闸板传送基板的装置，并且包括具有用于装载和卸载基板的闸板的传送室，能够在底板中上下移动的传送系统传送室，并且通过进入每个闸门来传送基板，用于气体流动的调节部分，其在传送室中产生气体流动，并且能够调节气体流动的速度;以及控制部分，使用基板的移动速度降低气流的速度。

59. 发明授权

US07469192B2 Parallel profile determination for an optical metrology system 失效
标题翻译：光学测量系统的平行轮廓确定
公开(公告)号：US07469192B2
公开(公告)日：2008-12-23
申请号：US11485046
申请日：2006-07-11
申请人： Tri Thanh Khuong , Junwei Bao , Jeffrey A. Chard , Wei Liu , Ying Zhu , Sachin Deshpande , Pranav Sheth , Hong Qiu
发明人： Tri Thanh Khuong , Junwei Bao , Jeffrey A. Chard , Wei Liu , Ying Zhu , Sachin Deshpande , Pranav Sheth , Hong Qiu
IPC分类号： G06F19/00 , G01B11/00
CPC分类号： G01B11/24 , G01N21/4788 , G01N21/95607 , G01N2021/95615 , G03F7/70625
摘要： A system to process requests for wafer structure profile determination from optical metrology measurements off a plurality of structures formed on one or more wafer includes a diffraction signal processor, a diffraction signal distributor, and a plurality of profile search servers. The diffraction signal processor is configured to obtain a plurality of measured diffraction signals of the plurality of structures. The diffraction signal distributor is coupled to the diffraction signal processor. The diffraction signal processor is configured to transmit the plurality of measured diffraction signals to the diffraction signal distributor. The plurality of profile search servers is coupled to the diffraction signal distributor. The diffraction signal distributor is configured to distribute the plurality of measured diffraction signals to the plurality of profile search servers. The profile search servers are configured to process in parallel the plurality of measured diffraction signals to determine profiles of the plurality of structures corresponding to the plurality of measured diffraction signals.
摘要翻译：包括衍射信号处理器，衍射信号分配器和多个轮廓搜索服务器，用于处理从一个或多个晶片上形成的多个结构的光学测量测量的晶圆结构轮廓确定的请求的系统。衍射信号处理器被配置为获得多个结构的多个测量的衍射信号。衍射信号分配器耦合到衍射信号处理器。衍射信号处理器被配置为将多个测量的衍射信号传输到衍射信号分配器。多个轮廓搜索服务器耦合到衍射信号分配器。衍射信号分配器被配置为将多个测量的衍射信号分布到多个简档搜索服务器。轮廓搜索服务器被配置为并行处理多个测量的衍射信号，以确定与多个测量的衍射信号相对应的多个结构的轮廓。

60. 发明申请

US20070233426A1 Using a virtual profile library 失效
标题翻译：使用虚拟配置文件库
公开(公告)号：US20070233426A1
公开(公告)日：2007-10-04
申请号：US11396112
申请日：2006-03-31
申请人： Merritt Funk , Daniel Prager
发明人： Merritt Funk , Daniel Prager
IPC分类号： G06F19/00 , G06F17/40
CPC分类号： G01R31/307 , G01R31/2846
摘要： A method of using a virtual profile library to determine the profile of an integrated circuit structure includes measuring a signal off the structure with a metrology device. The measurement generates a measured signal. The measured signal is compared to a plurality of signals in at least one library. The comparison is stopped if a matching criteria is met. A subset of a virtual profile data space associated with the virtual profile library is determined when a matching criteria is not met. The subset is determined using profile data space associated with the at least one library. A virtual profile signal of the subset of the virtual profile data space is selected. A virtual profile shape and/or virtual profile parameters are determined based on the virtual profile signal. A difference is calculated between the measured signal and the virtual profile signal. The difference is compared to a virtual profile library creation criteria. If the virtual profile library creation criteria is met, then the structure is identified using virtual profile data, which includes the virtual profile shape and/or the virtual profile parameters, associated with the virtual profile signal. Or, if the virtual profile library creation criteria is not met, then a corrective action is applied.
摘要翻译：使用虚拟简档库来确定集成电路结构的简档的方法包括使用测量装置测量离开结构的信号。测量产生测量信号。将测量的信号与至少一个库中的多个信号进行比较。如果符合匹配标准，则停止比较。当匹配标准不满足时，确定与虚拟简档库相关联的虚拟简档数据空间的子集。使用与至少一个库相关联的简档数据空间确定子集。选择虚拟简档数据空间的子集的虚拟简档信号。基于虚拟简档信号来确定虚拟简档形状和/或虚拟简档参数。在测量信号和虚拟轮廓信号之间计算差值。将差异与虚拟简档库创建标准进行比较。如果满足虚拟简档库创建标准，则使用与虚拟简档信号相关联的虚拟简档数据（包括虚拟简档形状和/或虚拟简档参数）来识别该结构。或者，如果虚拟配置文件库创建条件不满足，则应用纠正措施。

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