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51. 发明授权

US07234476B2 Method of cleaning CVD equipment processing chamber 有权
标题翻译：清洗CVD设备处理室的方法
公开(公告)号：US07234476B2
公开(公告)日：2007-06-26
申请号：US10385984
申请日：2003-03-10
申请人： Hirofumi Arai , Hideaki Fukuda
发明人： Hirofumi Arai , Hideaki Fukuda
IPC分类号： B08B9/093
CPC分类号： H01J37/32862 , B08B7/0035 , C23C16/4405 , Y10S134/902 , Y10S438/905
摘要： A method of remote plasma cleaning a processing chamber of CVD equipment, which has high cleaning rates, low cleaning operational cost and high efficiency, is provided. The method comprises supplying cleaning gas to the remote plasma-discharge device; activating the cleaning gas inside the remote plasma-discharge device; and bringing the activated cleaning gas into the processing chamber and which is characterized in that a mixed gas of F2 gas and an inert gas are used as the cleaning gas. A concentration of the F2 gas is 10% or higher. The F2 gas, which is a cleaning gas, is supplied to the remote plasma-discharge device from an F2 gas cylinder by diluting F2 gas at a given concentration by an inert gas.
摘要翻译：提供了一种远程等离子体清洁CVD设备的处理室，其具有高清洁率，低清洗操作成本和高效率。该方法包括向远程等离子体放电装置提供清洁气体; 激活远程等离子体放电装置内的清洁气体; 并将活化的清洁气体引入处理室中，其特征在于使用F 2气体和惰性气体的混合气体作为清洁气体。 F 2气体的浓度为10％以上。作为清洁气体的F 2气体从F 2气瓶通过稀释F 2 2 / SUB提供给远程等离子体放电装置通过惰性气体给出给定浓度的气体。

52. 发明授权

US07229935B2 Method of forming a thin film by plasma CVD of a silicon-containing source gas 有权
标题翻译：通过含硅源气体的等离子体CVD形成薄膜的方法
公开(公告)号：US07229935B2
公开(公告)日：2007-06-12
申请号：US10932816
申请日：2004-09-02
申请人： Atsuki Fukazawa , Kenichi Kagami , Manabu Kato
发明人： Atsuki Fukazawa , Kenichi Kagami , Manabu Kato
IPC分类号： H01L21/471 , C23C16/22
CPC分类号： H01L21/02126 , C23C16/401 , C23C16/505 , H01L21/02216 , H01L21/02274 , H01L21/31633
摘要： A method for forming a thin film includes: supplying an additive gas, a dilution gas, and a silicon-containing source gas into a reaction chamber wherein a substrate is placed; forming a thin film on the substrate by plasma CVD under a given pressure with a given intensity of radio-frequency (RF) power from a first point in time to a second point in time; at the second point in time, stopping the supply of the silicon-containing source gas; and at the second point in time, beginning reducing but not stopping the RF power, and beginning reducing the pressure, wherein the reduction of the RF power and the reduction of the pressure are synchronized up to a third point in time.
摘要翻译：形成薄膜的方法包括：将添加气体，稀释气体和含硅源气体供给到其中放置基板的反应室中; 通过等离子体CVD在给定的压力下以从第一时间点到第二时间点的给定强度的射频（RF）功率在衬底上形成薄膜; 在第二时间点停止含硅源气体的供给; 并且在第二时间点，开始减少但不停止RF功率，并开始降低压力，其中RF功率的降低和压力的降低被同步到第三时间点。

53. 发明申请

US20070111540A1 METHOD OF FORMING SILICON-CONTAINING INSULATION FILM HAVING LOW DIELECTRIC CONSTANT AND LOW FILM STRESS 有权
标题翻译：形成具有低介电常数和低膜应力的含硅绝缘膜的方法
公开(公告)号：US20070111540A1
公开(公告)日：2007-05-17
申请号：US11550930
申请日：2006-10-19
申请人： Yasuyoshi HYODO , Nobuo MATSUKI , Masashi YAMAGUCHI , Atsuki FUKAZAWA , Naoki OHARA , Yijun LIU
发明人： Yasuyoshi HYODO , Nobuo MATSUKI , Masashi YAMAGUCHI , Atsuki FUKAZAWA , Naoki OHARA , Yijun LIU
IPC分类号： H01L21/469
CPC分类号： H01L21/02274 , H01L21/02164 , H01L21/3122 , H01L21/31612 , H01L21/31633 , H01L21/76801
摘要： A method for forming a silicon-containing insulation film on a substrate by plasma polymerization includes: introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon cyclic compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.
摘要翻译：通过等离子体聚合在基板上形成含硅绝缘膜的方法包括：引入反应气体，该反应气体包含（i）包含含有至少一个乙烯基（Si-乙烯基化合物）的含硅烃环状化合物的源气体，和（ii）添加气体，放入放置基板的反应室中; 并向气体施加射频电力以引起等离子体聚合，由此在基板上沉积绝缘膜。

54. 发明申请

US20060286306A1 Method of producing advanced low dielectric constant film by UV light emission 审中-公开
标题翻译：通过紫外光发射制备先进的低介电常数膜的方法
公开(公告)号：US20060286306A1
公开(公告)日：2006-12-21
申请号：US11155841
申请日：2005-06-17
申请人： Naoki Ohara , Atsuki Fukazawa
发明人： Naoki Ohara , Atsuki Fukazawa
IPC分类号： B05D3/00 , C08J7/18 , B29C71/04
CPC分类号： C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02167 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02348 , H01L21/02362 , H01L21/3148 , H01L21/31633 , H01L21/3185
摘要： A method of treating a low-dielectric constant film includes: depositing a low-dielectric constant film on a substrate, which is structured by Si—C bond and has a first leakage current; and emitting ultraviolet (UV) light to the film until the film has a second leakage current which is ½ or less of the first leakage current.
摘要翻译：处理低介电常数膜的方法包括：在由Si-C键构成且具有第一漏电流的基板上沉积低介电常数膜; 并向该膜发射紫外线（UV）光，直到膜具有第一泄漏电流的1/2或更小的第二漏电流。

55. 发明申请

US20060275931A1 Technology of detecting abnormal operation of plasma process 审中-公开
标题翻译：检测等离子体工艺异常运行的技术
公开(公告)号：US20060275931A1
公开(公告)日：2006-12-07
申请号：US11134774
申请日：2005-05-20
申请人： Masahiro Takizawa , Takashi Wada
发明人： Masahiro Takizawa , Takashi Wada
IPC分类号： H01L21/00
CPC分类号： H01J37/32935
摘要： A method of detecting abnormal operation of a plasma process, includes: (i) detecting a potential Vpp1 between an upper electrode and a lower electrode disposed parallel to each other in a reaction camber at a time T1 after the plasma process begins in the reaction chamber; (ii) detecting a Vpp2 between the upper electrode and the lower electrode at a time T2 after T1; (iii) comparing Vpp1 and Vpp2 to obtain an operation value; and (iv) determining abnormal operation if the operation value is within a predetermined range.
摘要翻译：一种检测等离子体工艺的异常操作的方法包括：（i）在等离子体处理开始之后的时间T 1，在反应曲面中检测在彼此平行设置的上电极和下电极之间的电位Vpp 1 反应室; （ii）在T 1之后的时间T 2检测上电极和下电极之间的Vpp 2; （iii）比较Vpp 1和Vpp 2以获得操作值; 以及（iv）如果操作值在预定范围内，则确定异常操作。

56. 发明授权

US07138332B2 Method of forming silicon carbide films 有权
标题翻译：形成碳化硅膜的方法
公开(公告)号：US07138332B2
公开(公告)日：2006-11-21
申请号：US10616163
申请日：2003-07-09
申请人： Kamal Kishore Goundar
发明人： Kamal Kishore Goundar
IPC分类号： H01L21/4763
CPC分类号： H01L21/76801 , H01L21/76807 , H01L21/76829
摘要： To deposit silicon onto a substrate, there is introduced into a reaction zone a gas including source gases of silicon, carbon, nitrogen and an inert gas. An electric field is generated using low and high frequency RF power to produce a plasma discharge in the reaction zone to cause the deposition. The average power on the substrate is substantially constant. A ratio of low frequency RF power to total RF power is less than about 0.5.
摘要翻译：为了将硅沉积到衬底上，在反应区中引入包括硅，碳，氮和惰性气体的源气体的气体。使用低频和高频RF功率产生电场，以在反应区中产生等离子体放电以引起沉积。基板上的平均功率基本上是恒定的。低频RF功率与总RF功率的比值小于约0.5。

57. 发明申请

US20060216433A1 Method of stabilizing film quality of low-dielectric constant film 有权
公开(公告)号：US20060216433A1
公开(公告)日：2006-09-28
申请号：US11086598
申请日：2005-03-22
申请人： Atsuki Fukazawa , Kiyoto Itoh , Tsunayuki Kimura , Nobuo Matsuki
发明人： Atsuki Fukazawa , Kiyoto Itoh , Tsunayuki Kimura , Nobuo Matsuki
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： H01L21/31633 , C23C16/30 , C23C16/5096 , H01J37/32082 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/3122
摘要： A method of forming a film having a low dielectric constant, comprises the steps of: placing a substrate between an upper electrode and a lower electrode inside a reaction chamber, introducing a silicon-containing hydrocarbon compound source gas, an additive gas, and an inert gas into a space between the upper and lower electrodes by controlling a gas flow ratio, generating a plasma by applying RF power to the space between the upper and lower electrodes in a state in which an interval between the upper electrode and the substrate is narrower in the vicinity of a center of the substrate than that in the vicinity of its periphery, and forming a film having a low dielectric constant on the substrate at a deposition rate of less than approx. 790 nm/min by controlling a flow rate of the process gas.

58. 发明申请

US20060183341A1 METHOD OF FORMING SILICON-CONTAINING INSULATION FILM HAVING LOW DIELECTRIC CONSTANT AND LOW DIFFUSION COEFFICIENT 有权
标题翻译：形成具有低介电常数和低扩散系数的含硅绝缘膜的方法
公开(公告)号：US20060183341A1
公开(公告)日：2006-08-17
申请号：US11382512
申请日：2006-05-10
申请人： Naoto Tsuji , Kiyohiro Matsushita , Satoshi Takahashi , Nathan Kameling
发明人： Naoto Tsuji , Kiyohiro Matsushita , Satoshi Takahashi , Nathan Kameling
IPC分类号： H01L21/31
CPC分类号： C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/31633
摘要： A method for fabricating a semiconductor device includes: forming on a substrate a silicon-containing insulation film having a diffusion coefficient of about 250 μm2/min or less as measured using isopropyl alcohol, by plasma reaction using a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon compound containing plural cross-linkable groups, (ii) a cross-linking gas, (iii) an inert gas, and optionally (iv) an oxygen-supplying gas, wherein a flow rate of the oxygen-supplying gas is no more than 25% of that of the source gas; and subjecting the insulation film to an integration process to fabricate a semiconductor device.
摘要翻译：一种半导体器件的制造方法，其特征在于，在基板上形成由异丙醇测定的扩散系数为约250μm2 / min以下的含硅绝缘膜，反应气体包括（i）包含含有多个可交联基团的含硅烃化合物的源气体，（ii）交联气体，（iii）惰性气体和（iv）供氧气体，其中供氧气体的流量不超过源气体的流量的25％; 并对绝缘膜进行一体化处理以制造半导体器件。

59. 发明申请

US20060110931A1 Method for forming insulation film 有权
公开(公告)号：US20060110931A1
公开(公告)日：2006-05-25
申请号：US11294319
申请日：2005-12-05
申请人： Atsuki Fukazawa , Kenichi Kagami
发明人： Atsuki Fukazawa , Kenichi Kagami
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02126 , C23C16/401 , C23C16/4485 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/3122 , H01L21/31633 , H01L2924/12044
摘要： A method for forming an insulation film on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, C, O, and H on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.

60. 发明申请

US20060090700A1 Gas-introducing system and plasma CVD apparatus 有权
标题翻译：气体导入系统和等离子体CVD装置
公开(公告)号：US20060090700A1
公开(公告)日：2006-05-04
申请号：US11262103
申请日：2005-10-28
申请人： Kiyoshi Satoh , Yasushi Fukasawa , Kazuya Matsumoto
发明人： Kiyoshi Satoh , Yasushi Fukasawa , Kazuya Matsumoto
IPC分类号： C23C16/00 , C23F1/00
CPC分类号： H01J37/32091 , C23C16/4405 , C23C16/45565 , C23C16/5096 , C23F4/00 , H01J37/3244
摘要： A gas-introducing system for plasma CVD and cleaning includes: a showerhead including a top plate with a gas inlet port and a shower plate; a rectifying plate installed in the interior space of the showerhead and dividing the interior space into an upper space and a lower space; a structure for inhibiting inactivation of active species of the activated cleaning gas at the rectifying plate; and a piping unit for connecting the gas inlet port of the showerhead to a remote plasma unit and a reaction gas introduction port.
摘要翻译：用于等离子体CVD和清洁的气体引入系统包括：喷头，其包括具有进气口和喷淋板的顶板; 整流板，其安装在所述喷头的内部空间中，并将所述内部空间分隔成上部空间和下部空间; 用于抑制在整流板处活化的清洁气体的活性物质失活的结构; 以及用于将喷头的气体入口连接到远程等离子体单元和反应气体引入口的管道单元。

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