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51. 发明申请

US20100318972A1 Trace Correlation for Profiling Subroutines 有权
标题翻译：仿真子程序的跟踪相关性
公开(公告)号：US20100318972A1
公开(公告)日：2010-12-16
申请号：US12485196
申请日：2009-06-16
申请人： Zheng Xu , Richard G. Collins , Jason T. Nearing
发明人： Zheng Xu , Richard G. Collins , Jason T. Nearing
IPC分类号： G06F11/36 , G06F9/44
CPC分类号： G06F11/3636 , G06F9/3808
摘要： In one or more embodiments, a data processing system can include at least one core capable of executing instructions of an instruction set architecture and a trace unit coupled to the at least one core. A call to a subroutine can be detected, and in response, a program trace correlation (PTC) message can be generated and sent to a trace port. Data associated with an execution of the subroutine and/or performance of the data processing system can be sampled and sent to the trace port. A return from the subroutine can be detected, and in response, a trace message can be generated and sent to the trace port. The PTC message and the trace message can be correlated, and the correlation of the PTC message and the trace message can be used to determine a boundary for the subroutine and/or the sampled data associated with the execution of the subroutine.
摘要翻译：在一个或多个实施例中，数据处理系统可以包括能够执行指令集架构的指令的至少一个核心和耦合到所述至少一个核心的跟踪单元。可以检测到子程序的调用，作为响应，可以生成程序跟踪相关（PTC）消息并发送到跟踪端口。与子程序的执行和/或数据处理系统的执行相关联的数据可以被采样并发送到跟踪端口。可以检测子程序返回，作为响应，可以生成跟踪消息并将其发送到跟踪端口。可以将PTC消息和跟踪消息相关联，并且可以使用PTC消息和跟踪消息的相关性来确定与子例程的执行相关联的子例程和/或采样数据的边界。

52. 发明申请

US20100318752A1 Event Triggered Memory Mapped Access 有权
标题翻译：事件触发内存映射访问
公开(公告)号：US20100318752A1
公开(公告)日：2010-12-16
申请号：US12485190
申请日：2009-06-16
申请人： William D. Schwarz , Joseph P. Gergen , Jason T. Nearing , Zheng Xu
发明人： William D. Schwarz , Joseph P. Gergen , Jason T. Nearing , Zheng Xu
IPC分类号： G06F12/00
CPC分类号： G06F12/0292 , G06F11/3636
摘要： In one or more embodiments, a data processing system can include at least one core capable of executing instructions of an instruction set architecture and a triggered memory map access (tMMA) system coupled to the at least one core. The tMMA system can receive one or more events and, in response, perform one or more actions. For example, the actions can include transactions which can include a write to a an address of the memory map, a read from an address of the memory map, a read followed by write to two respective addresses of the memory map, and/or a fetch transaction. A result of a transaction (e.g., data read, data written, error, etc.) can be used in generating a trace message. For example, the tMMA system can generate a trace message that includes the result of the transaction and send the trace message to a trace message bus.
摘要翻译：在一个或多个实施例中，数据处理系统可以包括能够执行指令集架构的指令的至少一个核心以及耦合到所述至少一个核心的触发的存储器映射访问（tMMA）系统。 tMMA系统可以接收一个或多个事件，并作为响应执行一个或多个动作。例如，动作可以包括可以包括对存储器映射的地址的写入，从存储器映射的地址的读取，随后写入存储器映射的两个相应地址的读取的事务，和/或提取事务。事务的结果（例如，数据读取，数据写入，错误等）可用于生成跟踪消息。例如，tMMA系统可以生成包含事务结果的跟踪消息，并将跟踪消息发送到跟踪消息总线。

53. 发明授权

US07836283B2 Data acquisition messaging using special purpose registers 有权
标题翻译：使用专用寄存器的数据采集消息
公开(公告)号：US07836283B2
公开(公告)日：2010-11-16
申请号：US11848826
申请日：2007-08-31
申请人： Zheng Xu , Suraj Bhaskaran , Richard G. Collins , Jason T. Nearing
发明人： Zheng Xu , Suraj Bhaskaran , Richard G. Collins , Jason T. Nearing
IPC分类号： G06F9/315
CPC分类号： G06F11/3664
摘要： A method provides a data acquisition message of a data processing system to an external port thereof. Configuration information is written to a configuration register. It is determined if the configuration information identifies a data acquisition operation. If the data acquisition operation has been identified, data corresponding to the configuration information is written to a data register. The data in the data register and the configuration information in the configuration register are formatted into the data acquisition message. The data acquisition message is sent to the external port of the data processing system.
摘要翻译：一种方法将数据处理系统的数据获取消息提供给其外部端口。配置信息被写入配置寄存器。确定配置信息是否识别数据获取操作。如果数据获取操作被识别，则与配置信息对应的数据被写入数据寄存器。数据寄存器中的数据和配置寄存器中的配置信息被格式化为数据采集消息。数据采集消息发送到数据处理系统的外部端口。

54. 发明申请

US20100281308A1 TRACE MESSAGING DEVICE AND METHODS THEREOF 有权
标题翻译：跟踪消息设备及其方法
公开(公告)号：US20100281308A1
公开(公告)日：2010-11-04
申请号：US12432296
申请日：2009-04-29
申请人： Zheng Xu , Suraj Bhaskaran , Richard G. Collins , Jason T. Nearing
发明人： Zheng Xu , Suraj Bhaskaran , Richard G. Collins , Jason T. Nearing
IPC分类号： G06F11/07
CPC分类号： G06F11/3636
摘要： A method of generating timestamped trace messages includes generating a trace message in response to an event at an instruction pipeline of a data processing device. If timestamping is enabled, timestamps are only included in the trace message only if a programmable condition is detected. For example, a timestamp can be included in the trace message if the amount of space used to store messages at a trace message buffer exceeds a watermark value. The condition that results in a timestamped trace message is programmable, and can be selected via a debug interface. Because timestamps are only included in trace messages when the programmable condition is satisfied, some trace messages will not include a timestamp, thereby reducing the amount of buffer space needed to store the trace messages.
摘要翻译：产生时间戳跟踪消息的方法包括：响应于在数据处理设备的指令流水线处的事件产生跟踪消息。如果启用时间戳，只有在检测到可编程条件时，时间戳才会包含在跟踪消息中。例如，如果用于存储跟踪消息缓冲区中的消息的空间量超过了水印值，则时间戳可以被包括在跟踪消息中。导致时间戳跟踪消息的条件是可编程的，可以通过调试接口进行选择。由于时间戳仅在可编程条件满足时才包含在跟踪消息中，因此一些跟踪消息将不包含时间戳，从而减少存储跟踪消息所需的缓冲区空间量。

55. 发明申请

US20100092697A1 SCALABLE, HIGH-THROUGHPUT, MULTI-CHAMBER EPITAXIAL REACTOR FOR SILICON DEPOSITION 有权
标题翻译：可扩展的，高通量，多孔硅沉积物外延反应器
公开(公告)号：US20100092697A1
公开(公告)日：2010-04-15
申请号：US12355463
申请日：2009-01-16
申请人： Steve Poppe , Yan Rozenzon , David Z. Chen , Xiaole Yan , Peijun Ding , Zheng Xu
发明人： Steve Poppe , Yan Rozenzon , David Z. Chen , Xiaole Yan , Peijun Ding , Zheng Xu
IPC分类号： C23C16/44 , C23C16/54
CPC分类号： C23C16/4587 , C23C16/45502 , C23C16/46 , C23C16/54 , C30B25/105 , C30B25/12 , C30B25/165
摘要： One embodiment provides an apparatus for material deposition. The apparatus includes a reaction chamber, and a pair of susceptors. Each susceptor has a front side and a back side, and the front side mounts substrates. The susceptors are positioned vertically in such a way that the front sides of the susceptors face each other, and the vertical edges of the susceptors are in contact with each other, thereby forming a substantially enclosed narrow channel between the substrates. The apparatus also includes a number of gas nozzles for injecting reaction gases. The gas nozzles are controlled in such a way that gas flow directions inside the chamber can be alternated, thereby facilitating uniform material deposition. The apparatus includes a number of heating units situated outside the reaction chamber. The heating units are arranged in such a way that they radiate heat energy directly to the back sides of the susceptors.
摘要翻译：一个实施例提供了用于材料沉积的装置。该装置包括反应室和一对基座。每个感受体具有前侧和后侧，并且前侧安装基板。感应器垂直定位，使得基座的前侧彼此面对，并且基座的垂直边缘彼此接触，从而在基板之间形成基本封闭的窄通道。该装置还包括多个用于注入反应气体的气体喷嘴。气体喷嘴被控制成使得室内的气体流动方向可以交替，从而有利于均匀的材料沉积。该装置包括位于反应室外部的多个加热单元。加热单元以这样的方式布置，使得它们将热能直接辐射到基座的背面。

56. 发明授权

US07686479B2 LED flat-plate type multi-chip high power light source 失效
标题翻译： LED平板式多芯片大功率光源
公开(公告)号：US07686479B2
公开(公告)日：2010-03-30
申请号：US12043367
申请日：2008-03-06
申请人： Xianghong Yang , Baoyan Chang , Zheng Xu
发明人： Xianghong Yang , Baoyan Chang , Zheng Xu
IPC分类号： F21V29/00
CPC分类号： F21V29/70 , F21K9/00 , F21V29/505 , F21Y2105/10 , F21Y2105/12
摘要： The present invention provides a LED flat-plate type multi-chip high power light source comprising a heat dissipating substrate, a reflecting cover mounted on the heat dissipating substrate, a circuit board embedded in the heat dissipating substrate, LEDs mounted on the circuit board and in the reflecting cover, and the circuit board also connecting to a socket set in the heat dissipating substrate. The heat dissipating substrate is made of high heat conduction metal. In the present invention, the heat dissipating substrate is made of high heat conduction metal, and the heat conducting pole is abolished. Comparing with the conventional art, the present invention decreases the heat dissipating path, increases the sectional area, and eliminates the intermediate link of high thermal resistance.
摘要翻译：本发明提供一种LED平板型多芯片大功率光源，包括散热基板，安装在散热基板上的反射盖，嵌入散热基板的电路板，安装在电路板上的LED和在反射盖中，并且电路板还连接到设置在散热基板中的插座。散热基板由高导热金属制成。在本发明中，散热基板由高导热性金属制成，导热柱被消除。与现有技术相比，本发明减少了散热路径，增大了截面面积，消除了高耐热性的中间环节。

57. 发明申请

US20100065111A1 SOLAR CELLS FABRICATED BY USING CVD EPITAXIAL SI FILMS ON METALLURGICAL-GRADE SI WAFERS 有权
标题翻译：通过使用CVD外延膜在冶金级SI WAFERS上制造的太阳能电池
公开(公告)号：US20100065111A1
公开(公告)日：2010-03-18
申请号：US12343116
申请日：2008-12-23
申请人： Jianming Fu , Zheng Xu , Peijun Ding , Chentao Yu , Guanghua Song , Jianjun Liang
发明人： Jianming Fu , Zheng Xu , Peijun Ding , Chentao Yu , Guanghua Song , Jianjun Liang
IPC分类号： H01L31/0288
CPC分类号： H01L31/1804 , H01L21/3221 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： One embodiment of the present invention provides a method for fabricating a solar cell. The method includes: melting a metallurgical-grade (MG) Si feedstock, lowering a single-crystalline Si seed to touch the surface of the molten MG-Si, slowly pulling out a single-crystal Si ingot of the molten MG-Si, processing the Si ingot into single crystal Si wafers to form MG-Si substrates for subsequent epitaxial growth, leaching out residual metal impurities in the MG-Si substrate, epitaxially growing a layer of single-crystal Si thin film doped with boron on the MG-Si substrate, doping phosphor to the single-crystal Si thin film to form an emitter layer, depositing an anti-reflection layer on top of the single-crystal Si thin film, and forming the front and the back electrical contacts.
摘要翻译：本发明的一个实施例提供一种制造太阳能电池的方法。该方法包括：熔化冶金级（MG）Si原料，降低单晶Si种子以接触熔融的MG-Si的表面，缓慢拉出熔融的MG-Si的单晶Si锭，加工 Si晶锭形成单晶Si晶片以形成用于随后的外延生长的MG-Si衬底，浸出MG-Si衬底中的残余金属杂质，在MG-Si上外延生长掺杂有硼的单晶Si薄膜层衬底，掺杂磷光体到单晶Si薄膜以形成发射极层，在单晶Si薄膜的顶部沉积抗反射层，并形成前后电接触。

58. 发明申请

US20090269922A1 Method of depositing a metal seed layer over recessed feature surfaces in a semiconductor substrate 有权
标题翻译：在半导体衬底中的凹陷特征表面上沉积金属种子层的方法
公开(公告)号：US20090269922A1
公开(公告)日：2009-10-29
申请号：US12459091
申请日：2009-06-25
申请人： Tony Chiang , Gongda Yao , Peijun Ding , Fusen E. Chen , Barry L. Chin , Gene Y. Kohara , Zheng Xu , Hong Zhang
发明人： Tony Chiang , Gongda Yao , Peijun Ding , Fusen E. Chen , Barry L. Chin , Gene Y. Kohara , Zheng Xu , Hong Zhang
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/165 , H01L21/2855 , H01L21/76805 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871 , H01L21/76877 , H01L21/76879 , H01L21/76883
摘要： We disclose a method of depositing a metal seed layer on a wafer substrate comprising a plurality of recessed device features. The method comprises depositing a first portion of the metal seed layer on the wafer via plasma deposition at a sufficient ratio of wafer substrate bias to DC source power that bottom coverage is achieved while resputtering of surfaces of the recessed device features is inhibited. The method also comprises depositing a second portion of the metal seed layer at a ration of substrate RF bias to DC source power such that resputtering is not inhibited.
摘要翻译：我们公开了在包括多个凹入的装置特征的晶片衬底上沉积金属种子层的方法。该方法包括通过等离子体沉积将金属种子层的第一部分以足够的晶片衬底偏压比与DC源功率沉积在晶片上，达到底部覆盖范围，同时抑制凹陷器件特征的表面的再溅射。该方法还包括以基板RF偏压的比例将金属种子层的第二部分沉积到DC源功率，使得不会抑制再溅射。

59. 发明申请

US20090103379A1 INTEGRATED CIRCUIT MEMORY HAVING DYNAMICALLY ADJUSTABLE READ MARGIN AND METHOD THEREFOR 有权
标题翻译：具有动态可调整性的集成电路存储器及其方法
公开(公告)号：US20090103379A1
公开(公告)日：2009-04-23
申请号：US11875997
申请日：2007-10-22
申请人： Shayan Zhang , Hema Ramamurthy , Zheng Xu , Michael D. Snyder
发明人： Shayan Zhang , Hema Ramamurthy , Zheng Xu , Michael D. Snyder
IPC分类号： G11C7/00 , G11C29/00
CPC分类号： G11C29/02 , G11C11/41 , G11C29/026 , G11C29/028 , G11C2029/0409
摘要： A method for dynamically controlling sense amplifier differential margin of a memory during operation, in an integrated circuit, comprising a plurality of addressable units, is provided. The method includes setting the sense amplifier differential margin corresponding to the plurality of addressable units to a first value. The method further includes if a read data error occurs when data is read from a set of the plurality of addressable units, then setting the sense amplifier differential margin corresponding to the plurality of addressable units to a second value, wherein the second value is greater than the first value.
摘要翻译：提供了一种用于在包括多个可寻址单元的集成电路中在操作期间动态地控制存储器的读出放大器差分裕度的方法。该方法包括将与多个可寻址单元相对应的读出放大器差分裕度设置为第一值。该方法还包括如果当从多个可寻址单元的集合读取数据时发生读取数据错误，则将与多个可寻址单元相对应的读出放大器差分裕度设置为第二值，其中第二值大于第一个值。

60. 发明申请

US20080212703A1 METHOD AND APPARATUS FOR SUBCHANNEL ASSIGNMENT FOR SUPPRESSING INTERANTENNA INTERFERENCE IN OFDMA SYSTEM 有权
标题翻译：用于抑制OFDMA系统中的干扰干扰的子信道分配的方法和装置
公开(公告)号：US20080212703A1
公开(公告)日：2008-09-04
申请号：US12040023
申请日：2008-02-29
申请人： Shuangfeng HAN , Seong-Taek HWANG , Zhunhui ZHOU , Jing Wang , Ming Zhao , Zheng Xu
发明人： Shuangfeng HAN , Seong-Taek HWANG , Zhunhui ZHOU , Jing Wang , Ming Zhao , Zheng Xu
IPC分类号： H04L27/28
CPC分类号： H04L27/2601 , H04L5/0023 , H04L5/0032 , H04L5/0037 , H04L5/0062 , H04L5/023
摘要： Disclosed is a method and an apparatus for subchannel assignment for suppressing inter-antenna interference in an Orthogonal Frequency Division Multiplexing Access (OFDMA) system based distributed wireless communication system equipped with antennas that are randomly distributed in a geographical manner and can simultaneously communicate with multiple Subscriber Stations (SSs). The method includes selecting and obtaining access to distributed antennas which satisfy the data transmission rate that an SS requires and with which the SS can communicate; re-queuing a distributed antenna having the maximum transmitted power within the same cell in high priority; and assigning subchannels to the relevant distributed antennas in an order from the relevant distributed antenna having the high priority.
摘要翻译：公开了一种用于抑制基于正交频分复用接入（OFDMA）系统的分布式无线通信系统中的天线间干扰的方法和装置，所述分布式无线通信系统配备有以地理方式随机分布并可同时与多个用户通信的天线车站（SS）。该方法包括：选择和获得满足SS要求的数据传输速率并与SS通信的分布式天线; 将具有最高发送功率的分布式天线重新排队在高优先级的同一小区内; 以及从具有高优先级的相关分布式天线的顺序向相关的分布式天线分配子信道。

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