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1. 发明申请

US20100092698A1 SCALABLE, HIGH-THROUGHPUT, MULTI-CHAMBER EPITAXIAL REACTOR FOR SILICON DEPOSITION 有权
标题翻译：可扩展的，高通量，多孔硅沉积物外延反应器
公开(公告)号：US20100092698A1
公开(公告)日：2010-04-15
申请号：US12556454
申请日：2009-09-09
申请人： Steve Poppe , Yan Rozenzon , David Z. Chen , Xiaole Yan , Peijun Ding , Zheng Xu
发明人： Steve Poppe , Yan Rozenzon , David Z. Chen , Xiaole Yan , Peijun Ding , Zheng Xu
IPC分类号： C23C16/46 , C23C16/00
CPC分类号： C23C16/4408 , C23C16/455 , C23C16/4587 , C23C16/481 , C30B25/105 , C30B25/12 , C30B25/14 , C30B25/165
摘要： One embodiment provides an apparatus for material deposition. The apparatus includes a reaction chamber, and a pair of susceptors. Each susceptor has a front side mounting substrates and a back side. The front sides of the vertically positioned susceptors face each other, and the vertical edges of the susceptors are in contact with each other. The apparatus also includes a number of gas nozzles for injecting reaction gases. The gas flow directions inside the chamber can be alternated by controlling the gas nozzles. The gas nozzles are configured to inject a small amount of purge gas including at least one of: HCl, SiCl4, and H2 when the gas nozzles are not injecting reaction gas. The apparatus includes a number of heating units situated outside the reaction chamber. The heating units are arranged in such a way that they radiate heat energy directly to the back sides of the susceptors.
摘要翻译：一个实施例提供了用于材料沉积的装置。该装置包括反应室和一对基座。每个感受体具有正面安装基板和背面。垂直定位的基座的前侧彼此面对，并且基座的垂直边缘彼此接触。该装置还包括多个用于注入反应气体的气体喷嘴。可以通过控制气体喷嘴来改变室内的气体流动方向。气体喷嘴被配置为当气体喷嘴不注入反应气体时，喷射包括以下中的至少一种的少量吹扫气体：HCl，SiCl 4和H 2。该装置包括位于反应室外部的多个加热单元。加热单元以这样的方式布置，使得它们将热能直接辐射到基座的背面。

2. 发明授权

US08652259B2 Scalable, high-throughput, multi-chamber epitaxial reactor for silicon deposition 有权
标题翻译：可扩展的，高吞吐量的多腔外延反应堆，用于硅沉积
公开(公告)号：US08652259B2
公开(公告)日：2014-02-18
申请号：US12355463
申请日：2009-01-16
申请人： Steve Poppe , Yan Rozenzon , David Z. Chen , Xiaole Yan , Peijun Ding , Zheng Xu
发明人： Steve Poppe , Yan Rozenzon , David Z. Chen , Xiaole Yan , Peijun Ding , Zheng Xu
IPC分类号： C23C16/00
CPC分类号： C23C16/4587 , C23C16/45502 , C23C16/46 , C23C16/54 , C30B25/105 , C30B25/12 , C30B25/165
摘要： One embodiment provides an apparatus for material deposition. The apparatus includes a reaction chamber, and a pair of susceptors. Each susceptor has a front side and a back side, and the front side mounts substrates. The susceptors are positioned vertically in such a way that the front sides of the susceptors face each other, and the vertical edges of the susceptors are in contact with each other, thereby forming a substantially enclosed narrow channel between the substrates. The apparatus also includes a number of gas nozzles for injecting reaction gases. The gas nozzles are controlled in such a way that gas flow directions inside the chamber can be alternated, thereby facilitating uniform material deposition. The apparatus includes a number of heating units situated outside the reaction chamber. The heating units are arranged in such a way that they radiate heat energy directly to the back sides of the susceptors.
摘要翻译：一个实施例提供了用于材料沉积的装置。该装置包括反应室和一对基座。每个感受体具有前侧和后侧，并且前侧安装基板。感应器垂直定位，使得基座的前侧彼此面对，并且基座的垂直边缘彼此接触，从而在基板之间形成基本封闭的窄通道。该装置还包括多个用于注入反应气体的气体喷嘴。气体喷嘴被控制成使得室内的气体流动方向可以交替，从而有利于均匀的材料沉积。该装置包括位于反应室外部的多个加热单元。加热单元以这样的方式布置，使得它们将热能直接辐射到基座的背面。

3. 发明授权

US08845809B2 Scalable, high-throughput, multi-chamber epitaxial reactor for silicon deposition 有权
标题翻译：可扩展的，高吞吐量的多腔外延反应堆，用于硅沉积
公开(公告)号：US08845809B2
公开(公告)日：2014-09-30
申请号：US12556454
申请日：2009-09-09
申请人： Steve Poppe , Yan Rozenzon , David Z. Chen , Xiaole Yan , Peijun Ding , Zheng Xu
发明人： Steve Poppe , Yan Rozenzon , David Z. Chen , Xiaole Yan , Peijun Ding , Zheng Xu
IPC分类号： C23C16/00 , C30B25/16 , C23C16/455 , C23C16/48 , C30B25/12 , C30B25/14 , C23C16/44 , C30B25/10 , C23C16/458
CPC分类号： C23C16/4408 , C23C16/455 , C23C16/4587 , C23C16/481 , C30B25/105 , C30B25/12 , C30B25/14 , C30B25/165
摘要： One embodiment provides an apparatus for material deposition. The apparatus includes a reaction chamber, and a pair of susceptors. Each susceptor has a front side mounting substrates and a back side. The front sides of the vertically positioned susceptors face each other, and the vertical edges of the susceptors are in contact with each other. The apparatus also includes a number of gas nozzles for injecting reaction gases. The gas flow directions inside the chamber can be alternated by controlling the gas nozzles. The gas nozzles are configured to inject a small amount of purge gas including at least one of: HCl, SiCl4, and H2 when the gas nozzles are not injecting reaction gas. The apparatus includes a number of heating units situated outside the reaction chamber. The heating units are arranged in such a way that they radiate heat energy directly to the back sides of the susceptors.
摘要翻译：一个实施例提供了用于材料沉积的装置。该装置包括反应室和一对基座。每个感受体具有正面安装基板和背面。垂直定位的基座的前侧彼此面对，并且基座的垂直边缘彼此接触。该装置还包括多个用于注入反应气体的气体喷嘴。可以通过控制气体喷嘴来改变室内的气体流动方向。气体喷嘴被配置为当气体喷嘴不注入反应气体时，喷射包括以下中的至少一种的少量吹扫气体：HCl，SiCl 4和H 2。该装置包括位于反应室外部的多个加热单元。加热单元以这样的方式布置，使得它们将热能直接辐射到基座的背面。

4. 发明申请

US20100092697A1 SCALABLE, HIGH-THROUGHPUT, MULTI-CHAMBER EPITAXIAL REACTOR FOR SILICON DEPOSITION 有权
标题翻译：可扩展的，高通量，多孔硅沉积物外延反应器
公开(公告)号：US20100092697A1
公开(公告)日：2010-04-15
申请号：US12355463
申请日：2009-01-16
申请人： Steve Poppe , Yan Rozenzon , David Z. Chen , Xiaole Yan , Peijun Ding , Zheng Xu
发明人： Steve Poppe , Yan Rozenzon , David Z. Chen , Xiaole Yan , Peijun Ding , Zheng Xu
IPC分类号： C23C16/44 , C23C16/54
CPC分类号： C23C16/4587 , C23C16/45502 , C23C16/46 , C23C16/54 , C30B25/105 , C30B25/12 , C30B25/165
摘要： One embodiment provides an apparatus for material deposition. The apparatus includes a reaction chamber, and a pair of susceptors. Each susceptor has a front side and a back side, and the front side mounts substrates. The susceptors are positioned vertically in such a way that the front sides of the susceptors face each other, and the vertical edges of the susceptors are in contact with each other, thereby forming a substantially enclosed narrow channel between the substrates. The apparatus also includes a number of gas nozzles for injecting reaction gases. The gas nozzles are controlled in such a way that gas flow directions inside the chamber can be alternated, thereby facilitating uniform material deposition. The apparatus includes a number of heating units situated outside the reaction chamber. The heating units are arranged in such a way that they radiate heat energy directly to the back sides of the susceptors.
摘要翻译：一个实施例提供了用于材料沉积的装置。该装置包括反应室和一对基座。每个感受体具有前侧和后侧，并且前侧安装基板。感应器垂直定位，使得基座的前侧彼此面对，并且基座的垂直边缘彼此接触，从而在基板之间形成基本封闭的窄通道。该装置还包括多个用于注入反应气体的气体喷嘴。气体喷嘴被控制成使得室内的气体流动方向可以交替，从而有利于均匀的材料沉积。该装置包括位于反应室外部的多个加热单元。加热单元以这样的方式布置，使得它们将热能直接辐射到基座的背面。

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