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51. 发明授权

US06878589B1 Method and system for improving short channel effect on a floating gate device 有权
标题翻译：改善浮动栅极器件短沟道效应的方法和系统
公开(公告)号：US06878589B1
公开(公告)日：2005-04-12
申请号：US10431322
申请日：2003-05-06
申请人： Yue-Song He , Richard Fastow , Xin Guo
发明人： Yue-Song He , Richard Fastow , Xin Guo
IPC分类号： H01L21/336 , H01L29/788 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/66825 , H01L29/7885
摘要： A method and system for improving short channel effect on a floating gate device is disclosed. In one embodiment, a p-type implant is applied to a source side of the floating gate device. In addition, the present embodiment applies a p-type implant to a drain side of the floating gate device. The p-type implant to the drain side is performed at a different angle than the p-type implant to the source side. The p-type implant to the drain side is implanted to a greater depth than that of the p-type implant to the source side.
摘要翻译：公开了一种用于改善对浮动栅极器件的短沟道效应的方法和系统。在一个实施例中，p型注入被施加到浮动栅极器件的源极侧。此外，本实施例将p型注入施加到浮动栅极器件的漏极侧。以与植入源侧的p型植入物不同的角度进行到漏极侧的p型植入。植入到漏极侧的p型植入物被深度植入到源极侧的p型植入物的深度。

52. 发明授权

US06647995B1 Method and system for eliminating post etch residues 失效
标题翻译：消除后蚀刻残留物的方法和系统
公开(公告)号：US06647995B1
公开(公告)日：2003-11-18
申请号：US09894569
申请日：2001-06-27
申请人： Jiahua Huang , Yue-Song He , Frank Mak
发明人： Jiahua Huang , Yue-Song He , Frank Mak
IPC分类号： B08B700
CPC分类号： H01L21/67069 , B08B7/0035 , H01J2237/3151 , H01L21/31116
摘要： A method and system for eliminating post etch residues is disclosed. In one method embodiment, the present invention recites disposing a surface, having post etch residues adhered thereto, proximate to an electron beam source which generates electrons. The present method embodiment then recites bombarding the post etch residues with the electrons such that the post etch residues are removed from the surface to which the post etch residues were adhered.
摘要翻译：公开了一种用于消除后蚀刻残留物的方法和系统。在一个方法实施例中，本发明背诵设置具有粘附到其上的后蚀刻残留物的表面，靠近产生电子的电子束源。本方法实施例然后用电子轰击后蚀刻残留物，使得后蚀刻残留物从粘附有后蚀刻残余物的表面除去。

53. 发明授权

US06617639B1 Use of high-K dielectric material for ONO and tunnel oxide to improve floating gate flash memory coupling 有权
标题翻译：对于ONO和隧道氧化物使用高K介电材料来改善浮栅闪存耦合
公开(公告)号：US06617639B1
公开(公告)日：2003-09-09
申请号：US10176594
申请日：2002-06-21
申请人： Zhigang Wang , Xin Guo , Yue-Song He
发明人： Zhigang Wang , Xin Guo , Yue-Song He
IPC分类号： H01L29788
CPC分类号： H01L21/28194 , H01L21/28273 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66825 , H01L29/7883
摘要： A floating gate flash memory device including a substrate comprising a source region, a drain region, and a channel region positioned therebetween; a floating gate electrode positioned above the channel region and separated from the channel region by a tunnel dielectric material layer; and a control gate electrode positioned above the floating gate electrode and separated from the floating gate electrode by an interpoly dielectric layer, the interpoly dielectric layer comprising a modified ONO structure having a bottom dielectric material layer adjacent to the floating gate electrode, a top dielectric material layer adjacent to the control gate electrode, and a center layer comprising a nitride and positioned between the bottom dielectric material layer and the top dielectric material layer, in which the tunnel dielectric material layer, and at least one of the bottom dielectric material layer and the top dielectric material layer, comprise a high-K dielectric material.
摘要翻译：一种浮栅闪存器件，包括：衬底，包括源极区，漏极区和位于其间的沟道区; 位于通道区域上方并通过隧道介电材料层与沟道区分离的浮栅电极; 以及控制栅电极，其位于所述浮置栅电极的上方，并且通过间隔电介质层与所述浮栅电极分离，所述互聚电介质层包括具有与所述浮栅电极相邻的底电介质材料层的修饰的ONO结构，顶介电材料层，以及包括氮化物并位于底部电介质材料层和顶部电介质材料层之间的中心层，其中隧道电介质材料层和底部电介质材料层和底部电介质材料层中的至少一个顶部介电材料层，包括高K电介质材料。

54. 发明授权

US06444539B1 Method for producing a shallow trench isolation filled with thermal oxide 有权
标题翻译：用于生产填充有热氧化物的浅沟槽隔离体的方法
公开(公告)号：US06444539B1
公开(公告)日：2002-09-03
申请号：US09784892
申请日：2001-02-15
申请人： Yu Sun , Angela T. Hui , Yue-Song He , Tatsuya Kajita , Mark Chang , Chi Chang , Hung-Sheng Chen
发明人： Yu Sun , Angela T. Hui , Yue-Song He , Tatsuya Kajita , Mark Chang , Chi Chang , Hung-Sheng Chen
IPC分类号： H01L2176
CPC分类号： H01L21/7621 , H01L21/3085 , H01L21/3086 , H01L21/76232
摘要： A semiconductor apparatus and method for producing shallow trench isolation. The method includes the steps providing a semiconductor substrate member fabricated having a thin barrier oxide layer on which are fabricated a plurality of spaced apart silicon nitride pads. The regions between the spaced apart nitride pads delineate U-shaped regions for forming shallow isolation trenches and are layered with silicon oxide and polysilicon. The U-shaped regions provide a buffer region of oxide and polysilicon material adjacent opposing silicon nitride pads that prevent erosion of the nitride during etch formation of the isolation trench. The polysilicon is further etched to form a wider, second U-shaped region having sloped sidewalls that provide opposing spacer-forming buffer material that facilitates forming a V-shaped isolation trench region into the semiconductor substrate member a predetermined depth without eroding the silicon nitride pads. The V-shaped trench is subsequently filled with silicon dioxide that is grown by a hot thermal oxide process. The upper portion of the V-shaped isolation trench may be further filled with deposited silicon dioxide followed by a chemical mechanical polishing process.
摘要翻译：一种用于产生浅沟槽隔离的半导体装置和方法。该方法包括提供制造具有薄的阻挡氧化物层的半导体衬底构件的步骤，在其上制造多个间隔开的氮化硅衬垫。间隔开的氮化物衬垫之间的区域划定用于形成浅隔离沟槽的U形区域并且与氧化硅和多晶硅层叠。 U形区域提供邻近相对的氮化硅焊盘的氧化物和多晶硅材料的缓冲区，其在隔离沟槽的蚀刻形成期间防止氮化物的侵蚀。多晶硅被进一步蚀刻以形成更宽的第二U形区域，其具有倾斜的侧壁，其提供相对的间隔物形成缓冲材料，其有利于在不侵蚀氮化硅焊盘的情况下在半导体衬底构件中形成预定深度的V形隔离沟槽区域。随后，V形沟槽填充二氧化硅，二氧化硅通过热的热氧化工艺生长。 V形隔离沟槽的上部可以进一步填充沉积的二氧化硅，随后进行化学机械抛光工艺。

55. 发明授权

US06306707B1 Double layer hard mask process to improve oxide quality for non-volatile flash memory products 有权
标题翻译：双层硬掩模工艺，提高非挥发性闪存产品的氧化物质量
公开(公告)号：US06306707B1
公开(公告)日：2001-10-23
申请号：US09716659
申请日：2000-11-20
申请人： John Foster , Yue-Song He , Jiahua Huang
发明人： John Foster , Yue-Song He , Jiahua Huang
IPC分类号： H01L21336
CPC分类号： H01L27/11526 , H01L27/115 , H01L27/11521 , H01L27/11534
摘要： In the manufacture of an EPROM or EEPROM semiconductor device that includes a core region and a peripheral region, a nitride layer is formed over the core region and peripheral region, and an oxide layer is formed over the nitride layer. A layer of photoresist is provided over the oxide layer and is patterned to expose a portion of the oxide layer overlying the core region. A wet etch step is undertaken to remove the exposed portion of the oxide layer, using the patterned photoresist as a mask, and leaving exposed a portion of the nitride layer overlying the core region. After removal of the photoresist, the exposed portion of the nitride layer is etched by a wet etch step with hot phosphoric acid, using the pattered oxide layer as a mask.
摘要翻译：在制造包括芯区域和周边区域的EPROM或EEPROM半导体器件中，在芯区域和外围区域上形成氮化物层，并且在氮化物层上形成氧化物层。在氧化物层上提供一层光致抗蚀剂，并将其图案化以暴露覆盖芯区域的氧化物层的一部分。进行湿蚀刻步骤以使用图案化的光致抗蚀剂作为掩模去除氧化物层的暴露部分，并且将覆盖在核心区域上的氮化物层的一部分暴露出来。在去除光致抗蚀剂之后，使用图案化的氧化物层作为掩模，通过用热磷酸的湿蚀刻步骤蚀刻氮化物层的暴露部分。

56. 发明授权

US6153470A Floating gate engineering to improve tunnel oxide reliability for flash memory devices 失效
标题翻译：浮栅工程，以提高闪存器件的隧道氧化可靠性
公开(公告)号：US6153470A
公开(公告)日：2000-11-28
申请号：US374059
申请日：1999-08-12
申请人： Yue-Song He , Kent K. Chang , Jiahua Huang
发明人： Yue-Song He , Kent K. Chang , Jiahua Huang
IPC分类号： H01L21/28 , H01L29/423 , H01L29/49 , H01L21/336 , H01L21/8234 , H01L29/04 , H01L29/72 , H01L31/072
CPC分类号： H01L21/28273 , H01L29/42324 , H01L29/4916 , Y10S438/923
摘要： A method of forming floating gate to improve tunnel oxide reliability for flash memory devices. A substrate having a source, drain, and channel regions is provided. A tunnel oxide layer is formed over the substrate. A floating gate is formed over the tunnel oxide and the channel region, the floating gate being multi-layered and having a second layer sandwiched between a first layer and a third layer. The first layer of the floating gate overlying the tunnel oxide layer includes an undoped or lightly doped material. The second layer is highly-doped. The third layer is in direct contact with a dielectric layer, e.g., an oxide-nitride-oxide stack, and is made of an undoped or lightly doped material. A dielectric material is formed over the floating gate and a control gate is formed over the dielectric material.
摘要翻译：一种形成浮动栅极以提高闪存器件的隧道氧化物可靠性的方法。提供具有源极，漏极和沟道区域的衬底。在衬底上形成隧道氧化物层。在隧道氧化物和沟道区域上形成浮栅，浮栅是多层的，并且具有夹在第一层和第三层之间的第二层。覆盖隧道氧化物层的浮置栅极的第一层包括未掺杂或轻掺杂的材料。第二层是高度掺杂的。第三层与电介质层直接接触，例如氧化物 - 氮化物 - 氧化物堆叠，并且由未掺杂或轻掺杂的材料制成。介电材料形成在浮动栅极上，并且控制栅极形成在电介质材料上。

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