专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US5790707A Film image reading system and image processing method dot sequentially adjusting image parameters 失效
标题翻译：电影图像读取系统和图像处理方法顺序调整图像参数
公开(公告)号：US5790707A
公开(公告)日：1998-08-04
申请号：US715818
申请日：1996-09-19
申请人： Hiroshi Tanaka , Atsuhiko Ishihara , Manabu Hyodo , Makoto Nakazawa
发明人： Hiroshi Tanaka , Atsuhiko Ishihara , Manabu Hyodo , Makoto Nakazawa
IPC分类号： G06T1/00 , H04N1/60 , H04N3/38 , H04N5/253 , H04N9/11
CPC分类号： H04N3/38 , H04N1/6027 , H04N5/253 , H04N9/11
摘要： The present invention achieves an exposure control for getting an image with the best SN without a mechanical iris and an image processing which is good at the color-reappearance and the gradation property with a simple digital processing circuit. When the film image is read by the line sensor 14 which has an electric shutter function, the electric shutter, the film feeding speed and the analog amplifier 16 are controlled totally so as to obtain images with the best SN from high to low transmittance negatives. And, when the dot sequential R, G, B digital signals are processed digitally, the offset values and the gain volumes of the respective R, G, B are calculated based on the maximum value and the minimum value which are detected by the respective R, G, B digital signals, the calculated offset values of the respective R, G, B are added to the dot sequential R, G, B digital signals which are obtained during the re-scanning, and the calculated gain volumes of the respective R, G, B are multiplied by the offset dot-sequential R, G, B digital signals so as to adjust the white balance and the black balance.
摘要翻译：本发明通过简单的数字处理电路实现了获得具有最佳SN的图像的曝光控制，而没有机械光圈和具有良好的色彩再现性和灰度特性的图像处理。当通过具有电动快门功能的线传感器14读取胶片图像时，完全控制电动快门，胶片馈送速度和模拟放大器16，以便获得具有从高到低透射率底片的最佳SN的图像。并且，当点数R，G，B数字信号被数字地处理时，相应的R，G，B的偏移值和增益容积根据由相应R检测的最大值和最小值计算，G，B数字信号，将相应的R，G，B的计算的偏移值加到在重新扫描期间获得的点连续的R，G，B数字信号中，并且计算出的相应R的增益量，G，B乘以偏移点顺序R，G，B数字信号，以调整白平衡和黑平衡。

52. 发明授权

US5682566A Film transport apparatus 失效
标题翻译：胶片输送装置
公开(公告)号：US5682566A
公开(公告)日：1997-10-28
申请号：US531082
申请日：1995-09-20
申请人： Makoto Nakazawa , Masaaki Orimoto , Sueo Itoh , Shouji Watanabe
发明人： Makoto Nakazawa , Masaaki Orimoto , Sueo Itoh , Shouji Watanabe
IPC分类号： G03B1/44 , G03B1/48 , G03B17/30 , G03B27/53 , G03B17/00
CPC分类号： G03B1/48 , G03B17/30 , G03B2217/261 , G03B2217/266
摘要： A contact position at which the photographic film sent out from a film cartridge first contacts a film guide means is determined in such a manner that the photographic film does not contact a film entrance of the film cartridge when a film winding diameter in the film cartridge is at its maximum, and that only the edges of the photographic film, which curls in a direction of its breadth, which is not an image area, contacts the film entrance when the film winding diameter is at its minimum. As a result, the image area on the film is not damaged if the film is transported back and forth many times, and dust which causes damage to the film can be reduced.
摘要翻译：确定从胶片暗盒发出的照相胶片首先接触胶片导向装置的接触位置，使得当胶片暗盒中的胶片卷绕直径为并且当薄膜卷绕直径为最小时，只有沿着它的宽度方向卷曲不是图像区域的照相胶片的边缘接触胶片入口。结果，如果胶片来回传送多次，则膜上的图像区域不会被损坏，并且可以减少对膜造成损害的灰尘。

53. 发明授权

US4088767A 4-Dichlorophenylurazole compounds and use in agricultural fungicidal compositions 失效
标题翻译： 4-二氯苯基脲类化合物，用于农业杀真菌剂
公开(公告)号：US4088767A
公开(公告)日：1978-05-09
申请号：US637740
申请日：1975-12-04
申请人： Taichiro Shigematsu , Tetsuya Shibahara , Makoto Nakazawa , Masayuki Tomida , Toshio Munakata
发明人： Taichiro Shigematsu , Tetsuya Shibahara , Makoto Nakazawa , Masayuki Tomida , Toshio Munakata
IPC分类号： A01N43/653 , C07D237/04 , C07D249/12 , A01N9/12 , A01N9/22 , A01N21/00
CPC分类号： C07D237/04 , C07D249/12
摘要： There is disclosed a fungicide comprising as active ingredient a 1,2-substituted-4-(3',5'-dichlorophenyl) urazole derivative suitable for preventing various diseases of plants including fruit trees, vegetables, rice plants and beans.
摘要翻译：公开了一种杀真菌剂，其包含作为有效成分的1,2-取代-4-（3'，5'-二氯苯基）脲衍生物，适用于预防植物的各种疾病，包括果树，蔬菜，水稻和豆类。

54. 发明授权

US08852753B2 Galvanized steel sheet 有权
标题翻译：镀锌钢板
公开(公告)号：US08852753B2
公开(公告)日：2014-10-07
申请号：US13521302
申请日：2010-07-09
申请人： Kenichiroh Matsumura , Makoto Nakazawa , Masahiro Yui , Takehiro Takahashi
发明人： Kenichiroh Matsumura , Makoto Nakazawa , Masahiro Yui , Takehiro Takahashi
IPC分类号： B32B15/04 , B32B15/18 , C23C28/00 , C23C2/28 , C23C2/06 , C23C2/02
CPC分类号： C23C2/06 , C23C2/02 , C23C2/28 , C23C28/321 , C23C28/345 , Y10T428/12618 , Y10T428/12799 , Y10T428/265 , Y10T428/27
摘要： The present invention provides a galvanized steel sheet including: a steel sheet; and a galvanizing layer provided on a surface of the steel sheet; wherein the galvanizing layer includes an amorphous coating layer having an inorganic oxoacid salt and metallic oxide on a surface layer of the galvanizing layer; the galvanizing layer includes a ζ phase and a δ1 phase; the galvanizing layer includes, by mass, 8 to 13% of Fe; Zn in the metallic oxide exists up to an outermost surface layer of the amorphous layer; and an X-ray diffraction intensity ratio I, which is obtained by dividing an X-ray diffraction intensity of the ζ phase at d=0.126, after removing background intensity, by an X-ray diffraction intensity of the δ1 phase at d=0.126, after removing background intensity, is 0.06 to 0.35.
摘要翻译：本发明提供一种镀锌钢板，其包括：钢板; 以及设置在钢板表面上的镀锌层; 其中所述镀锌层包括在所述镀锌层的表面层上具有无机含氧酸盐和金属氧化物的无定形涂层; 镀锌层包括ζ相和δ1相; 所述镀锌层含有8〜13％的Fe; 金属氧化物中的Zn存在直到无定形层的最外表面层; 以及通过在d = 0.126处的δ1相的X射线衍射强度除去背景强度后，在d = 0.126处除去ζ相的X射线衍射强度而得到的X射线衍射强度比I 去除背景强度后，为0.06〜0.35。

55. 发明授权

US08723174B2 Thin film transistor, contact structure, substrate, display device, and methods for manufacturing the same 有权
标题翻译：薄膜晶体管，接触结构，基板，显示装置及其制造方法
公开(公告)号：US08723174B2
公开(公告)日：2014-05-13
申请号：US13701379
申请日：2011-04-27
申请人： Makoto Nakazawa
发明人： Makoto Nakazawa
IPC分类号： H01L27/105
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/1255 , H01L29/66969 , H01L29/78618
摘要： A TFT 17 provided on a substrate 3 is provided. The TFT 17 includes a gate electrode 31, a gate insulating film 32, a semiconductor 33, a source electrode 34, a drain electrode 35, and a protection film 36. The semiconductor 33 includes a metal oxide semiconductor. The semiconductor 33 has a source portion 33a which is in contact with the source electrode 34, a drain portion 33b which is in contact with the drain electrode 35, and a channel portion 33c which is exposed through the source electrode 34 and the drain electrode 35. A conductive layer 37 having a relatively small electrical resistance is formed in each of the source portion 33a and the drain portion 33b. The conductive layer 37 is removed from the channel portion 33c.
摘要翻译：设置在基板3上的TFT17。 TFT17包括栅极31，栅极绝缘膜32，半导体33，源极34，漏极35和保护膜36.半导体33包括金属氧化物半导体。半导体33具有与源电极34接触的源极部33a，与漏电极35接触的漏极部33b，以及通过源电极34和漏电极35露出的沟道部33c 在源极部33a和漏极部33b中形成具有较小电阻的导电层37。导电层37从通道部分33c移除。

56. 发明授权

US08420458B2 Semiconductor device and method of producing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08420458B2
公开(公告)日：2013-04-16
申请号：US13260886
申请日：2009-11-25
申请人： Makoto Nakazawa , Mitsunobu Miyamoto
发明人： Makoto Nakazawa , Mitsunobu Miyamoto
IPC分类号： H01L29/06 , H01L21/20
CPC分类号： H01L27/12 , H01L21/76816 , H01L27/124 , H01L27/1244 , H01L27/1248
摘要： A semiconductor device has a planarizing layer that is made of an inorganic film, and has a recessed portion formed in a region thereof in which a conductive film is disposed. A first contact hole penetrating through at least an interlayer insulating film is formed on a first wiring layer, while a second contact hole penetrating through at least the interlayer insulating film is formed on the conductive film so as to run through the inside of the recessed portion.
摘要翻译：半导体器件具有由无机膜制成的平坦化层，并且在其中设置有导电膜的区域中形成有凹部。在第一布线层上形成贯穿至少层间绝缘膜的第一接触孔，而在导电膜上形成穿过至少层间绝缘膜的第二接触孔，从而穿过凹部的内部。

57. 发明申请

US20130069061A1 THIN FILM TRANSISTOR, CONTACT STRUCTURE, SUBSTRATE, DISPLAY DEVICE, AND METHODS FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管，接触结构，基板，显示装置及其制造方法
公开(公告)号：US20130069061A1
公开(公告)日：2013-03-21
申请号：US13701379
申请日：2011-04-27
申请人： Makoto Nakazawa
发明人： Makoto Nakazawa
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/1255 , H01L29/66969 , H01L29/78618
摘要： A TFT 17 provided on a substrate 3 is provided. The TFT 17 includes a gate electrode 31, a gate insulating film 32, a semiconductor 33, a source electrode 34, a drain electrode 35, and a protection film 36. The semiconductor 33 includes a metal oxide semiconductor. The semiconductor 33 has a source portion 33a which is in contact with the source electrode 34, a drain portion 33b which is in contact with the drain electrode 35, and a channel portion 33c which is exposed through the source electrode 34 and the drain electrode 35. A conductive layer 37 having a relatively small electrical resistance is formed in each of the source portion 33a and the drain portion 33b. The conductive layer 37 is removed from the channel portion 33c.
摘要翻译：设置在基板3上的TFT17。 TFT17包括栅极31，栅极绝缘膜32，半导体33，源极34，漏极35和保护膜36.半导体33包括金属氧化物半导体。半导体33具有与源电极34接触的源极部33a，与漏电极35接触的漏极部33b，以及通过源电极34和漏电极35露出的沟道部33c 在源极部33a和漏极部33b中形成具有较小电阻的导电层37。导电层37从通道部分33c移除。

58. 发明申请

US20100283059A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100283059A1
公开(公告)日：2010-11-11
申请号：US12811842
申请日：2008-12-25
申请人： Makoto Nakazawa , Tomohiro Kimura
发明人： Makoto Nakazawa , Tomohiro Kimura
IPC分类号： H01L29/786 , H01L21/336 , H01L21/84 , H01L23/552
CPC分类号： H01L29/78633 , H01L21/02532 , H01L21/02686 , H01L23/552 , H01L27/1218 , H01L27/124 , H01L27/1244 , H01L27/1248 , H01L29/78603 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor device includes: an insulating substrate; a stepwise layer arranged on the insulating substrate and having an end portion whose inclination angle is equal to or greater than 60°; an insulating layer formed on the insulating substrate and the stepwise layer so as to be elevated on the stepwise layer; a first semiconductor layer arranged at a portion adjacent to the elevated insulating layer; and a second semiconductor layer structured with a material identical to that of the first semiconductor layer, and formed in an island shape on the elevated insulating layer.
摘要翻译：半导体器件包括：绝缘基板; 布置在所述绝缘基板上并且具有倾斜角度等于或大于60°的端部的逐层; 绝缘层，形成在所述绝缘基板和所述阶梯层上以在所述逐层上升高; 布置在与所述高架绝缘层相邻的部分处的第一半导体层; 以及由与第一半导体层的材料相同的材料构成的第二半导体层，并且在升高的绝缘层上形成为岛状。

59. 发明授权

US5955627A Process for the preparation of cyclopropylacetylene derivatives 失效
标题翻译：环丙基乙炔衍生物的制备方法
公开(公告)号：US5955627A
公开(公告)日：1999-09-21
申请号：US989412
申请日：1997-12-12
申请人： Makoto Nakazawa , Toshimichi Mitani , Yoichi Satake , Shigeo Oozono , Goro Asanuma , Manzo Shiono
发明人： Makoto Nakazawa , Toshimichi Mitani , Yoichi Satake , Shigeo Oozono , Goro Asanuma , Manzo Shiono
IPC分类号： C07C1/26 , C07C13/04 , C07C17/00 , C07C22/00 , C07C51/353 , C07C51/363 , C07C67/307 , C07C67/343 , C07C51/377 , C07C67/317
CPC分类号： C07C67/307 , C07C1/26 , C07C13/04 , C07C17/00 , C07C22/00 , C07C51/353 , C07C51/363 , C07C67/343 , C07C2101/02 , Y02P20/55
摘要： According to the present invention, a process for the preparation of a cyclopropylacetylene derivative represented by the following formula (III): ##STR1## is provided, which comprises reacting a cyclopropylacrylic acid derivative represented by the following formula (I): ##STR2## with a halogenating agent to obtain a halogenocyclopropylpropionic acid derivative represented by the following formula (II): ##STR3## and reacting the halogenocyclopropylpropionic acid derivative with a base.
摘要翻译：根据本发明，提供了制备由下式（III）表示的环丙基乙炔衍生物的方法：包括使下式（I）表示的环丙基丙烯酸衍生物与卤化剂反应，得到由下式（II）表示的卤代环丙基丙酸衍生物：使卤代环丙基丙酸衍生物与碱反应。

60. 发明授权

US5737099A Film image input system having improved focusing and reduced size 失效
标题翻译：胶片图像输入系统具有改进的聚焦和减小的尺寸
公开(公告)号：US5737099A
公开(公告)日：1998-04-07
申请号：US788203
申请日：1997-01-24
申请人： Makoto Nakazawa , Masaaki Orimoto
发明人： Makoto Nakazawa , Masaaki Orimoto
IPC分类号： G02B27/02 , H04N1/00 , H04N1/04 , H04N1/12 , H04N1/193 , H04N5/253
CPC分类号： H04N1/00249 , H04N1/00267 , H04N1/0027 , H04N1/12 , H04N1/193 , H04N2201/0077 , H04N2201/0408
摘要： When illuminating light from a fluorescent light is illuminated toward photo film being conveyed, the transmitted image light of the illuminated photo film is reflected by a mirror and focused on a CCD line sensor through a taking lens. Then, the electric signals converted by photoelectric conversion elements of the CCD line sensor are image-processed by an image processing system, and then outputted to a TV monitor as image signals. The fluorescent light is arranged on the side of the base surface of the film such that the illuminating light illuminates the base surface of the film first and then passes through the emulsion surface of the film so that this image light is focused on the CCD line sensor, so that the film image can be reproduced clearly. The taking lens and the CCD line sensor are arranged in a space between the film cartridge and the film winding room in such a manner that the taking optical axis becomes parallel to the photo film conveying direction so as to use the space effectively, so that the system can be made compact.
摘要翻译：当将来自荧光灯的光照射到被传送的照相胶片时，照射的照相胶片的透射图像光被反射镜反射并通过拍摄镜头聚焦在CCD线传感器上。然后，由CCD线传感器的光电转换元件转换的电信号由图像处理系统进行图像处理，然后作为图像信号输出到TV监视器。荧光灯配置在薄膜的基面的一侧，使得照明光首先照射胶片的基面，然后通过胶片的乳剂表面，使得该图像光聚焦在CCD线传感器，使得电影图像可以被清晰地再现。拍摄镜头和CCD线传感器被布置在暗盒和胶片卷绕室之间的空间中，使得拍摄光轴变得平行于照相胶片传送方向，以便有效地使用该空间，使得系统可以做到紧凑。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式