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    • 54. 发明授权
    • Microstructure array, mold for forming a microstructure array, and method of fabricating the same
    • 微结构阵列,用于形成微结构阵列的模具及其制造方法
    • US06800950B2
    • 2004-10-05
    • US10232328
    • 2002-09-03
    • Takayuki TeshimaTakashi Ushijima
    • Takayuki TeshimaTakashi Ushijima
    • H01L23544
    • H01L23/544H01L21/2885H01L2223/5442H01L2223/54453H01L2924/0002H01L2924/00
    • In a fabrication method of a microstructure array, such as a mold for forming a microlens array, a first insulating mask layer is formed on a conductive portion of s substrate, an array of openings for the microstructure array and at least an opening for an alignment marker are formed in the first insulating mask layer during a common process to expose the conductive portion of the substrate at the openings, and first plated or electrodeposited layers are grown in the openings and on the first insulating mask layer using the conductive portion of the substrate as a cathode. The opening for the alignment marker is surrounded by the array of openings for the microstructure array, and a pattern of the opening for the alignment marker is determined such that a current density distribution at the time of electroplating or electrodeposition can be oppressed.
    • 在诸如用于形成微透镜阵列的模具的微结构阵列的制造方法中,第一绝缘掩模层形成在基板的导电部分上,用于微结构阵列的开口阵列和用于对准的至少一个开口 在通常的工艺中,在第一绝缘掩模层中形成标记,以在开口处露出衬底的导电部分,并且使用衬底的导电部分在开口和第一绝缘掩模层上生长第一电镀或电沉积层 作为阴极。 用于对准标记的开口由用于微结构阵列的开口阵列包围,并且确定用于对准标记的开口的图案,使得可以抑制电镀或电沉积时的电流密度分布。