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51. 发明申请

US20070215958A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070215958A1
公开(公告)日：2007-09-20
申请号：US11798593
申请日：2007-05-15
申请人： Masayuki Tanaka , Yoshio Ozawa , Shigehiko Saida , Akira Goda , Mitsuhiro Noguchi , Yuichiro Mitani , Yoshitaka Tsunashima
发明人： Masayuki Tanaka , Yoshio Ozawa , Shigehiko Saida , Akira Goda , Mitsuhiro Noguchi , Yuichiro Mitani , Yoshitaka Tsunashima
IPC分类号： H01L29/94
CPC分类号： H01L21/022 , H01L21/0217 , H01L21/28176 , H01L21/28202 , H01L21/28247 , H01L21/28518 , H01L21/3185 , H01L21/76838 , H01L21/76897 , H01L29/40117 , H01L29/513 , H01L29/518 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/792
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a gate electrode, a first insulating film formed between the semiconductor substrate and the gate electrode, and a second insulating film formed along a top surface or a side surface of the gate electrode and including a lower silicon nitride film containing nitrogen, silicon and hydrogen and an upper silicon nitride film formed on the lower silicon nitride film and containing nitrogen, silicon and hydrogen, and wherein a composition ratio N/Si of nitrogen (N) to silicon (Si) in the lower silicon nitride film is higher than that in the upper silicon nitride film.
摘要翻译：公开了一种半导体器件，包括半导体衬底，栅电极，形成在半导体衬底和栅电极之间的第一绝缘膜，以及沿着栅电极的顶表面或侧表面形成的第二绝缘膜，包含氮，硅和氢的氮化硅膜和形成在下部氮化硅膜上并含有氮，硅和氢的上部氮化硅膜，并且其中氮（N）与硅（Si）的组成比N / Si在下氮化硅膜比上述氮化硅膜高。

52. 发明授权

US07148158B2 Semiconductor device and method for manufacturing the same 失效
公开(公告)号：US07148158B2
公开(公告)日：2006-12-12
申请号：US10916500
申请日：2004-08-12
申请人： Yoshio Ozawa , Masayuki Tanaka , Kiyotaka Miyano , Shigehiko Saida
发明人： Yoshio Ozawa , Masayuki Tanaka , Kiyotaka Miyano , Shigehiko Saida
IPC分类号： H01L21/338 , H01L21/8238 , H01L21/336 , H01L21/4763 , H01L21/44
CPC分类号： H01L29/4983 , H01L29/41783 , H01L29/6656
摘要： A semiconductor device includes a semiconductor device comprising a semiconductor substrate, source/drain regions formed in the semiconductor substrate, a gate insulation film formed on the semiconductor substrate, a gate electrode formed on the gate insulation film between the source/drain regions, and a gate sidewall spacer formed on side surfaces of the gate electrode, wherein the gate sidewall spacer is composed of silicon oxide containing 0.1–30 atomic % of chlorine.

53. 发明申请

US20050003619A1 Nonvolatile semiconductor memory and manufacturing method for the same 失效
标题翻译：非易失性半导体存储器及其制造方法相同
公开(公告)号：US20050003619A1
公开(公告)日：2005-01-06
申请号：US10717719
申请日：2003-11-21
申请人： Masayuki Tanaka , Atsuhiro Sato , Hiroki Yamashita , Ichiro Mizushima , Yoshio Ozawa
发明人： Masayuki Tanaka , Atsuhiro Sato , Hiroki Yamashita , Ichiro Mizushima , Yoshio Ozawa
IPC分类号： H01L21/8247 , H01L21/336 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , H01L27/115 , H01L27/11524
摘要： A semiconductor memory encompasses a memory cell matrix, which embraces device isolation films running along the column-direction, arranged alternatively between the cell columns; first conductive layers having top surfaces lower than the device isolation films; inter-electrode dielectrics arranged on the corresponding first conductive layers, the inter-electrode dielectric has a dielectric constant larger than that of silicon oxide; and second conductive layers running along the row-direction, each of the second conductive layers arranged on the inter-electrode dielectric and the device isolation films so that the second conductive layer can be shared by the memory cell transistors arranged along the row-direction belonging to different cell columns.
摘要翻译：半导体存储器包括存储单元矩阵，其包括沿列方向延伸的器件隔离膜，交替地布置在单元列之间; 第一导电层的顶表面低于器件隔离膜; 布置在相应的第一导电层上的电极间电介质，所述电极间电介质的介电常数大于氧化硅的介电常数; 和沿着行方向延伸的第二导电层，每个第二导电层布置在电极间电介质和器件隔离膜上，使得第二导电层可以被沿着行方向归属布置的存储单元晶体管共享到不同的细胞柱。

54. 发明授权

US06784508B2 Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof 有权
标题翻译：具有包含含有金属，硅和氧的绝缘膜的栅极绝缘膜结构的半导体器件及其制造方法
公开(公告)号：US06784508B2
公开(公告)日：2004-08-31
申请号：US09803265
申请日：2001-03-09
申请人： Yoshitaka Tsunashima , Seiji Inumiya , Yasumasa Suizu , Yoshio Ozawa , Kiyotaka Miyano , Masayuki Tanaka
发明人： Yoshitaka Tsunashima , Seiji Inumiya , Yasumasa Suizu , Yoshio Ozawa , Kiyotaka Miyano , Masayuki Tanaka
IPC分类号： H01L2978
CPC分类号： H01L21/82345 , H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/31604 , H01L21/823462 , H01L21/823475 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545 , H01L29/6656
摘要： Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.
摘要翻译：权利要求和公开的是一种半导体器件，包括具有在包含金属，硅和氧的金属硅酸盐的化合物中含有氮或氟的栅极绝缘膜结构的晶体管，具有非晶态金属氧化物层叠结构的栅极绝缘膜结构膜和金属硅酸盐膜，或具有包括第一金属元素的氧化物膜的第一栅极绝缘膜和包括第二金属元素的金属硅酸盐膜的第二栅极绝缘膜的栅极绝缘膜结构。

55. 发明申请

US20080102616A1 Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof 有权
标题翻译：具有包含含有金属，硅和氧的绝缘膜的栅极绝缘膜结构的半导体器件及其制造方法
公开(公告)号：US20080102616A1
公开(公告)日：2008-05-01
申请号：US11999958
申请日：2007-12-07
申请人： Yoshitaka Tsunashima , Seiji Ihumiya , Yasumasa Suizu , Yoshio Ozawa , Kiyotaka Miyano , Masayuki Tanaka
发明人： Yoshitaka Tsunashima , Seiji Ihumiya , Yasumasa Suizu , Yoshio Ozawa , Kiyotaka Miyano , Masayuki Tanaka
IPC分类号： H01L21/283
CPC分类号： H01L21/82345 , H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/31604 , H01L21/823462 , H01L21/823475 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545 , H01L29/6656
摘要： Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.
摘要翻译：权利要求和公开的是一种半导体器件，包括具有在包含金属，硅和氧的金属硅酸盐的化合物中含有氮或氟的栅极绝缘膜结构的晶体管，具有非晶态金属氧化物层叠结构的栅极绝缘膜结构膜和金属硅酸盐膜，或具有包括第一金属元素的氧化物膜的第一栅极绝缘膜和包括第二金属元素的金属硅酸盐膜的第二栅极绝缘膜的栅极绝缘膜结构。

56. 发明申请

US20050006675A1 Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof 有权
标题翻译：具有包含含有金属，硅和氧的绝缘膜的栅极绝缘膜结构的半导体器件及其制造方法
公开(公告)号：US20050006675A1
公开(公告)日：2005-01-13
申请号：US10915805
申请日：2004-08-11
申请人： Yoshitaka Tsunashima , Seiji Ihumiya , Yasumasa Suizu , Yoshio Ozawa , Kiyotaka Miyano , Masayuki Tanaka
发明人： Yoshitaka Tsunashima , Seiji Ihumiya , Yasumasa Suizu , Yoshio Ozawa , Kiyotaka Miyano , Masayuki Tanaka
IPC分类号： H01L21/283 , H01L21/28 , H01L21/316 , H01L21/336 , H01L21/8234 , H01L29/49 , H01L29/51 , H01L29/78 , H01L29/76 , H01L31/062 , B21D39/00 , H01L31/119
CPC分类号： H01L21/82345 , H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/31604 , H01L21/823462 , H01L21/823475 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545 , H01L29/6656
摘要： Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.
摘要翻译：权利要求和公开的是一种半导体器件，包括具有在包含金属，硅和氧的金属硅酸盐的化合物中含有氮或氟的栅极绝缘膜结构的晶体管，具有非晶态金属氧化物层叠结构的栅极绝缘膜结构膜和金属硅酸盐膜，或具有包括第一金属元素的氧化物膜的第一栅极绝缘膜和包括第二金属元素的金属硅酸盐膜的第二栅极绝缘膜的栅极绝缘膜结构。

57. 发明授权

US08304352B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08304352B2
公开(公告)日：2012-11-06
申请号：US13051031
申请日：2011-03-18
申请人： Masayuki Tanaka , Kazuhiro Matsuo , Yoshio Ozawa
发明人： Masayuki Tanaka , Kazuhiro Matsuo , Yoshio Ozawa
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/28282 , H01L27/11568 , H01L27/11582
摘要： According to an embodiment, there is provided a method of manufacturing a semiconductor device, including forming a nitride film by nitriding a surface of an underlying region having a semiconductor region containing silicon as a main component and an insulating region containing silicon and oxygen as a main component and adjacent to the semiconductor region, carrying out oxidation with respect to the nitride film to convert a portion of the nitride film which is formed on the insulating region into an oxide film and to leave a portion of the nitride film which is formed on the semiconductor region as at least part of a charge storage insulating film, forming a block insulating film on the charge storage insulating film, and forming a gate electrode film on the block insulating film.
摘要翻译：根据一个实施例，提供一种制造半导体器件的方法，包括通过氮化作为主要成分的含有硅的半导体区域的下面的区域的表面和以硅和氧为主要的绝缘区域来形成氮化物膜并且与半导体区域相邻，相对于氮化物膜进行氧化，将形成在绝缘区域上的氮化物膜的一部分转换为氧化膜，并且使形成在该半导体层上的氮化膜的一部分半导体区域作为电荷存储绝缘膜的至少一部分，在电荷存储绝缘膜上形成块绝缘膜，并在块绝缘膜上形成栅极电极膜。

58. 发明授权

US07306994B2 Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof 有权
标题翻译：具有包含含有金属，硅和氧的绝缘膜的栅极绝缘膜结构的半导体器件及其制造方法
公开(公告)号：US07306994B2
公开(公告)日：2007-12-11
申请号：US10915805
申请日：2004-08-11
申请人： Yoshitaka Tsunashima , Seiji Inumiya , Yasumasa Suizu , Yoshio Ozawa , Kiyotaka Miyano , Masayuki Tanaka
发明人： Yoshitaka Tsunashima , Seiji Inumiya , Yasumasa Suizu , Yoshio Ozawa , Kiyotaka Miyano , Masayuki Tanaka
IPC分类号： H01L21/8234
CPC分类号： H01L21/82345 , H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/31604 , H01L21/823462 , H01L21/823475 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545 , H01L29/6656
摘要： Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.
摘要翻译：权利要求和公开的是一种半导体器件，包括具有在包含金属，硅和氧的金属硅酸盐的化合物中含有氮或氟的栅极绝缘膜结构的晶体管，具有非晶态金属氧化物层叠结构的栅极绝缘膜结构膜和金属硅酸盐膜，或具有包括第一金属元素的氧化物膜的第一栅极绝缘膜和包括第二金属元素的金属硅酸盐膜的第二栅极绝缘膜的栅极绝缘膜结构。

59. 发明申请

US20060060927A1 Nonvolatile semiconductor memory and manufacturing method for the same 有权
公开(公告)号：US20060060927A1
公开(公告)日：2006-03-23
申请号：US11267331
申请日：2005-11-07
申请人： Yoshio Ozawa , Masayuki Tanaka , Fumitaka Arai
发明人： Yoshio Ozawa , Masayuki Tanaka , Fumitaka Arai
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L27/11524 , H01L29/42324 , H01L29/7883
摘要： The memory cell matrix encompasses (a) a plurality device isolation films running along column direction, (b) first conductive layers arranged along row and column-directions, adjacent groups of the first conductive layers are isolated from each other by the device isolation film disposed between the adjacent groups, (c) lower inter-electrode dielectrics arranged respectively on crests of the corresponding first conductive layers, (d) an upper inter-electrode dielectric arranged on the lower inter-electrode dielectric made of insulating material different from the lower inter-electrode dielectrics, and (e) second conductive layers running along the row-direction, arranged on the upper inter-electrode dielectric.

60. 发明授权

US06772045B2 System for determining dry cleaning timing, method for determining dry cleaning timing, dry cleaning method, and method for manufacturing semiconductor device 失效
标题翻译：用于确定干洗时间的系统，确定干洗时间的方法，干洗方法和制造半导体装置的方法
公开(公告)号：US06772045B2
公开(公告)日：2004-08-03
申请号：US10231019
申请日：2002-08-30
申请人： Shuji Katsui , Masayuki Tanaka , Masaki Kamimura , Hiroshi Akahori , Ichiro Mizushima , Takashi Nakao , Akihito Yamamoto , Shigehiko Saida , Yoshitaka Tsunashima , Yuuichi Mikata
发明人： Shuji Katsui , Masayuki Tanaka , Masaki Kamimura , Hiroshi Akahori , Ichiro Mizushima , Takashi Nakao , Akihito Yamamoto , Shigehiko Saida , Yoshitaka Tsunashima , Yuuichi Mikata
IPC分类号： G06F1900
CPC分类号： H04L12/66 , Y10S438/905
摘要： A system for determining dry cleaning timing, includes: a manufacturing apparatus configured to process materials assigned by a sequence of lots; an apparatus controller configured to control the manufacturing apparatus and obtaining operational conditions of the manufacturing apparatus as apparatus information; a lot information input terminal configured to obtain process conditions of one of the lots as lot information; an apparatus information storage unit configured to store the apparatus information from the apparatus controller as an apparatus information database; a lot information storage unit configured to store the lot information from the lot information input terminal as a lot information database; and a cleaning determination unit configured to determine timing to perform a dry cleaning of the manufacturing apparatus based on the apparatus information database and the lot information database.
摘要翻译：一种用于确定干洗时间的系统，包括：制造装置，被配置为处理由批次序列分配的材料; 设备控制器，其被配置为控制所述制造设备并获得所述制造设备的操作条件作为设备信息; 许多信息输入终端，被配置为获取所述批中的一个的处理条件作为批量信息; 设备信息存储单元，被配置为将来自设备控制器的设备信息作为设备信息数据库存储; 许多信息存储单元被配置为将来自批次信息输入终端的批量信息作为批次信息数据库存储; 以及清洁确定单元，被配置为基于装置信息数据库和批次信息数据库来确定对制造装置进行干洗的定时。

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