专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US08642436B2 Method of manufacturing silicon carbide semiconductor device 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：US08642436B2
公开(公告)日：2014-02-04
申请号：US13330413
申请日：2011-12-19
申请人： Naoki Ooi , Hiromu Shiomi
发明人： Naoki Ooi , Hiromu Shiomi
IPC分类号： H01L21/336
CPC分类号： H01L29/1608 , H01L21/0465 , H01L21/047 , H01L29/66068 , H01L29/7802
摘要： A first impurity region is formed by ion implantation through a first opening formed in a mask layer. By depositing a spacer layer on an etching stop layer on which the mask layer has been provided, a mask portion having the mask layer and the spacer layer is formed. By anisotropically etching the spacer layer, a second opening surrounded by a second sidewall is formed in the mask portion. A second impurity region is formed by ion implantation through the second opening. An angle of the second sidewall with respect to a surface is 90°±10° across a height as great as a second depth. Thus, accuracy in extension of an impurity region can be enhanced.
摘要翻译：通过在掩模层中形成的第一开口的离子注入形成第一杂质区。通过在其上设置有掩模层的蚀刻停止层上沉积间隔层，形成具有掩模层和间隔层的掩模部分。通过各向异性蚀刻间隔层，在掩模部分中形成由第二侧壁包围的第二开口。通过第二开口的离子注入形成第二杂质区。第二侧壁相对于表面的角度在与第二深度一样大的高度上为90°±10°。因此，可以提高杂质区域的扩展精度。

52. 发明授权

US08609521B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08609521B2
公开(公告)日：2013-12-17
申请号：US13583564
申请日：2011-11-07
申请人： Ryosuke Kubota , Keiji Wada , Takeyoshi Masuda , Hiromu Shiomi
发明人： Ryosuke Kubota , Keiji Wada , Takeyoshi Masuda , Hiromu Shiomi
IPC分类号： H01L21/265
CPC分类号： H01L29/7802 , H01L21/046 , H01L21/268 , H01L29/1608 , H01L29/66068
摘要： A silicon carbide substrate having a surface is prepared. An impurity region is formed by implanting ions from the surface into the silicon carbide substrate. Annealing for activating the impurity region is performed. The annealing includes the step of applying first laser light having a first wavelength to the surface of the silicon carbide substrate, and the step of applying second laser light having a second wavelength to the surface of the silicon carbide substrate. The silicon carbide substrate has first and second extinction coefficients at the first and second wavelengths, respectively. A ratio of the first extinction coefficient to the first wavelength is higher than 5×105/m. A ratio of the second extinction coefficient to the second wavelength is lower than 5×105/m. Consequently, damage to the surface of the silicon carbide substrate during laser annealing can be reduced.
摘要翻译：制备具有表面的碳化硅衬底。通过从表面注入离子到碳化硅衬底中形成杂质区。执行用于激活杂质区域的退火。退火包括将具有第一波长的第一激光施加到碳化硅衬底的表面的步骤，以及将具有第二波长的第二激光施加到碳化硅衬底的表面的步骤。碳化硅衬底分别在第一和第二波长处具有第一和第二消光系数。第一消光系数与第一波长的比率高于5×10 5 / m。第二消光系数与第二波长的比率低于5×10 5 / m。因此，可以减少在激光退火期间对碳化硅衬底的表面的损坏。

53. 发明申请

US20120184092A1 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：US20120184092A1
公开(公告)日：2012-07-19
申请号：US13352104
申请日：2012-01-17
申请人： Naoki OOI , Hiromu Shiomi
发明人： Naoki OOI , Hiromu Shiomi
IPC分类号： H01L21/266
CPC分类号： H01L21/0465 , H01L21/31116 , H01L29/1608 , H01L29/66068
摘要： A method for manufacturing a silicon carbide semiconductor device includes the step of forming a mask pattern of a silicon oxide film by removing a portion of the silicon oxide film by means of etching employing a gas containing oxygen gas and at least one fluorine compound gas selected from a group consisting of CF4, C2F6, C3F8, and SF6.
摘要翻译：一种制造碳化硅半导体器件的方法包括以下步骤：通过使用含氧气体的蚀刻和至少一种选自以下的氟化合物气体的蚀刻来除去氧化硅膜的一部分来形成氧化硅膜的掩模图案：由CF4，C2F6，C3F8和SF6组成的组。

54. 发明申请

US20060091402A1 Silicon carbide single crystal, silicon carbide substrate and manufacturing method for silicon carbide single crystal 有权
标题翻译：碳化硅单晶，碳化硅基板和碳化硅单晶的制造方法
公开(公告)号：US20060091402A1
公开(公告)日：2006-05-04
申请号：US11258998
申请日：2005-10-27
申请人： Hiromu Shiomi , Hiroyuki Kinoshita
发明人： Hiromu Shiomi , Hiroyuki Kinoshita
IPC分类号： H01L31/0312
CPC分类号： C30B29/36 , C30B23/00 , Y10S438/931
摘要： SiC single crystal that includes a first dopant functioning as an acceptor, and a second dopant functioning as a donor is provided, where the content of the first dopant is no less than 5×1015 atoms/cm3, the content of the second dopant is no less than 5×1015 atoms/cm3, and the content of the first dopant is greater than the content of the second dopant. A manufacturing method for silicon carbide single crystal is provided with the steps of: fabricating a raw material by mixing a metal boride with a material that includes carbon and silicon; vaporizing the raw material; generating a mixed gas that includes carbon, silicon, boron and nitride; and growing silicon carbide single crystal that includes boron and nitrogen on a surface of a seed crystal substrate by re-crystallizing the mixed gas on the surface of the seed crystal substrate.
摘要翻译：提供包括用作受体的第一掺杂剂和用作供体的第二掺杂剂的SiC单晶，其中第一掺杂剂的含量不小于5×10 15原子/ 3，第二掺杂剂的含量不小于5×10 15原子/ cm 3，第一掺杂剂的含量大于第二掺杂剂。提供了一种碳化硅单晶的制造方法，其特征在于：通过将金属硼化物与包含碳和硅的材料混合来制造原料; 蒸发原料; 产生包括碳，硅，硼和氮化物的混合气体; 以及通过使晶种基板的表面上的混合气体再结晶，在晶种基板的表面上生长包含硼和氮的碳化硅单晶。

55. 发明授权

US06184611B2 Electron-emitting element 失效
标题翻译：电子发射元件
公开(公告)号：US06184611B2
公开(公告)日：2001-02-06
申请号：US09037514
申请日：1998-03-10
申请人： Hirohisa Saito , Takashi Tsuno , Hiromu Shiomi , Yoshiaki Kumazawa , Takahiro Imai
发明人： Hirohisa Saito , Takashi Tsuno , Hiromu Shiomi , Yoshiaki Kumazawa , Takahiro Imai
IPC分类号： H01J102
CPC分类号： H01J1/3042 , H01J2201/30457
摘要： An electron-emitting element comprises a diamond substrate, and a diamond protrusion grown on a surface of the diamond substrate so as to have a pointed portion in a form capable of emitting an electron. Since the diamond protrusion formed by growth has a sharply pointed tip portion, it can fully emit electrons. Preferably, the surface of the diamond substrate is a {100} face, and the diamond protrusion is surrounded by {111} faces.
摘要翻译：电子发射元件包括金刚石衬底和在金刚石衬底的表面上生长的金刚石突起，以便具有能够发射电子的形式的尖端部分。由于通过生长形成的金刚石突起具有尖锐的尖端部分，所以它可以完全发射电子。优选地，金刚石基底的表面是{100}面，并且金刚石突起被{111}面包围。

56. 发明授权

US5818148A Electromechanical switch 失效
标题翻译：机电开关
公开(公告)号：US5818148A
公开(公告)日：1998-10-06
申请号：US812076
申请日：1997-03-06
申请人： Hiromu Shiomi
发明人： Hiromu Shiomi
IPC分类号： H01H15/00 , B81B5/00 , H01H1/00 , H01H1/02 , H01H3/00 , H01H9/40 , H01H57/00 , H01H59/00 , H01H15/04 , H01H15/06 , H01H15/10
CPC分类号： H01H1/0036 , H01H1/02 , H01H2001/0078 , H01H3/004 , H01H57/00 , H01H59/0009 , H01H9/40
摘要： A mechanical switch having two contacting sliding plates which have conductive parts periodically dispersed in an insulating background in a spatial period and a current assembling member for gathering currents from the conductive parts, and a driving device for reciprocating two sliding plates in parallel to the surface relatively by about half a period. The driving device cuts or leads a current from one sliding plate to the other by displacing the sliding plates. Parallel movement of the plates suppresses the occurrence of arc discharge in shutting a big current. The short stroke of the displacement gives high speed switching to the device.
摘要翻译：一种具有两个接触滑动板的机械开关，其具有在空间周期中周期性地分散在绝缘背景中的导电部件和用于从导电部件收集电流的当前组装部件，以及用于相对于表面平行地往复运动的两个滑动板的驱动装置大约半个小时。驱动装置通过移动滑板将电流从一个滑板切割或引导到另一个。板的平行移动抑制了在关闭大电流时发生电弧放电。位移的短行程给予设备高速切换。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式