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    • 53. 发明授权
    • Semiconductor laser equipment
    • 半导体激光设备
    • US07567598B2
    • 2009-07-28
    • US10593033
    • 2005-03-08
    • Hirofumi MiyajimaHirofumi Kan
    • Hirofumi MiyajimaHirofumi Kan
    • H01S3/04
    • H01S5/405H01L23/473H01L2924/0002H01S5/024H01S5/02407H01L2924/00
    • This invention relates to a semiconductor laser apparatus having a structure to prevent corrosion in a refrigerant flow path of a heat sink and cool stably a semiconductor laser array over a long period. The semiconductor laser apparatus has a semiconductor laser stack, a refrigerant supplier, an insulating piping, and a refrigerant. The refrigerant supplier supplies the refrigerant to the semiconductor laser stack. The refrigerant is comprised of fluorocarbon. The insulating piping is an insulating piping with flexibility. An grounded conductive material is arranged inside the insulating piping. The conductive material operates to remove static electricity generated where the refrigerant flows inside the insulating piping.
    • 本发明涉及一种具有防止散热器制冷剂流路中的腐蚀并长时间稳定地冷却半导体激光器阵列的结构的半导体激光装置。 半导体激光装置具有半导体激光器堆叠,制冷剂供给器,绝缘管道和制冷剂。 制冷剂供应器将制冷剂供应到半导体激光器堆叠。 制冷剂由碳氟化合物构成。 绝缘管是具有柔性的绝缘管。 绝缘管道内布置有接地导电材料。 导电材料用于除去制冷剂在绝热管道内流动的静电。
    • 55. 发明申请
    • Semiconductor laser device and semiconductor laser device array
    • 半导体激光器件和半导体激光器件阵列
    • US20090022194A1
    • 2009-01-22
    • US11659198
    • 2005-08-04
    • Akiyoshi WatanabeHirofumi MiyajimaHirofumi Kan
    • Akiyoshi WatanabeHirofumi MiyajimaHirofumi Kan
    • H01S5/20
    • H01S5/4031H01S5/101H01S5/1014H01S5/1085H01S5/16H01S5/2231H01S2301/18
    • In an active layer 15 of a semiconductor laser device 3, a refractive index type main waveguide 4 is formed by a ridge portion 9a of a p-type clad layer 17. Side surfaces 4g and 4h of the main waveguide 4 form a relative angle θ, based on a total reflection critical angle θc at the side surfaces 4g and 4h, with respect to a light emitting surface 1a and a light reflecting surface 1b. The main waveguide 4 is separated by predetermined distances from the light emitting surface 1a and the light reflecting surface 1b, and optical path portions 8a and 8b, for making a laser light L1 pass through, are disposed between one end of the main waveguide 4 and the light emitting surface 1a and between the other end of the main waveguide 4 and the light reflecting surface 1b. The optical path portions 8a and 8b are gain type waveguides and emit light components L2 and L3, which, among the light passing through the optical path portions 8a and 8b, deviate from a direction of a predetermined axis A, to the exterior. A semiconductor laser device and a semiconductor laser device array that can emit laser light of comparatively high intensity and can reduce side peaks are thereby realized.
    • 在半导体激光器件3的有源层15中,折射率型主波导4由p型覆盖层17的脊部9a形成。主波导4的侧表面4g和4h形成相对角θ 基于相对于发光表面1a和光反射表面1b在侧表面4g和4h处的全反射临界角度。 主波导4与发光面1a和光反射面1b分离规定距离,激光L1通过的光路部8a,8b配置在主波导管4的一端和 发光表面1a和主波导4的另一端和光反射表面1b之间。 光路部分8a和8b是增益型波导,并且发射光通过光路部分8a和8b的光从预定轴线A的方向偏离的光分量L2和L3到外部。 从而可以实现能够发出较高强度的激光并能够减少侧峰的半导体激光器件和半导体激光器件阵列。
    • 56. 发明申请
    • Passive Q switch laser device
    • 被动Q开关激光装置
    • US20090016385A1
    • 2009-01-15
    • US11661327
    • 2005-09-06
    • Hiroshi SakaiHirofumi KanTakunori Taira
    • Hiroshi SakaiHirofumi KanTakunori Taira
    • H01S3/113
    • H01S3/113H01S3/0014H01S3/0621H01S3/0627H01S3/08036H01S3/10061
    • A laser apparatus 10 includes: a laser medium 11 arranged between a pair of reflecting means 12A and 12B of an optical resonator 12 and adapted to be excited to emit light; a saturable absorber 14 arranged on the optical axis L of the optical resonator 12 between the pair of reflecting means, the transmissivity thereof being adapted to increase with the absorption of emitted light 21 from the laser medium; and an excitation light source unit 13 adapted to output light 22 having a wavelength that excites the laser medium. The saturable absorber 14 is a crystalline body having first to third mutually perpendicular crystallographic axes and is arranged in the optical resonator 12 in such a manner as to have different transmissivities for emitted light in two mutually perpendicular polarization directions. In this case, a laser oscillation occurs for emitted light in the polarization direction that shows the greater transmissivity, and it is therefore possible to obtain laser beams having a stabilized polarization direction.
    • 激光装置10包括:激光介质11,配置在光谐振器12的一对反射装置12A和12B之间,并被激发以发光; 在所述一对反射装置之间布置在所述光学谐振器12的光轴L上的可饱和吸收体14,其透射率适于随着来自激光介质的发射光21的吸收而增加; 以及适于输出具有激发激光介质的波长的光22的激发光源单元13。 可饱和吸收体14是具有第一至第三相互垂直的结晶轴的结晶体,并且以对于两个相互垂直的偏振方向的发射光具有不同透射率的方式设置在光学谐振器12中。 在这种情况下,对于显示较大透射率的偏振方向的发光,发生激光振荡,因此可以获得具有稳定的偏振方向的激光束。