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51. 发明申请

US20090114969A1 Silicon carbide semiconductor device and related manufacturing method 有权
标题翻译：碳化硅半导体器件及相关制造方法
公开(公告)号：US20090114969A1
公开(公告)日：2009-05-07
申请号：US12289624
申请日：2008-10-30
申请人： Naohiro Suzuki , Yuuichi Takeuchi , Takeshi Endo , Eiichi Okuno , Toshimasa Yamamoto
发明人： Naohiro Suzuki , Yuuichi Takeuchi , Takeshi Endo , Eiichi Okuno , Toshimasa Yamamoto
IPC分类号： H01L29/94 , H01L21/04 , H01L29/68
CPC分类号： H01L29/7813 , H01L29/045 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/0847 , H01L29/1095 , H01L29/1608 , H01L29/47 , H01L29/66068 , H01L29/7391 , H01L29/7397 , H01L29/7828
摘要： An SiC semiconductor device and a related manufacturing method are disclosed having a structure provided with a p+-type deep layer formed in a depth equal to or greater than that of a trench to cause a depletion layer between at a PN junction between the p+-type deep layer and an n−-type drift layer to extend into the n−-type drift layer in a remarkable length, making it difficult for a high voltage, resulting from an adverse affect arising from a drain voltage, to enter a gate oxide film. This results in a capability of minimizing an electric field concentration in the gate oxide film, i.e., an electric field concentration occurring at the gate oxide film at a bottom wall of the trench.
摘要翻译：公开了一种SiC半导体器件和相关制造方法，其具有设置有等于或大于沟槽深度形成的p +型深层的结构，以在p +型之间的PN结处引起耗尽层深层和n型漂移层以非常长的长度延伸到n型漂移层中，使得由于漏极电压引起的不利影响导致的高电压难以进入栅极氧化膜。这导致使栅极氧化膜中的电场浓度最小化的能力，即在沟槽的底壁处的栅极氧化膜处发生的电场浓度。

52. 发明申请

US20090099263A1 Organ-adhesion preventing agent and process for preventing adhesion using thereof 审中-公开
标题翻译：器官粘附防止剂及其防止粘合的方法
公开(公告)号：US20090099263A1
公开(公告)日：2009-04-16
申请号：US12227379
申请日：2007-05-11
申请人： Yotaro Izumi , Masafumi Kawamura , Koichi Kobayashi , Takeshi Endo , Atsushi Nagai , Makoto Shichinohe
发明人： Yotaro Izumi , Masafumi Kawamura , Koichi Kobayashi , Takeshi Endo , Atsushi Nagai , Makoto Shichinohe
IPC分类号： A61K31/197
CPC分类号： A61K31/785 , A61L31/06 , C08L77/04
摘要： There is disclosed an organ-adhesion preventing agent comprising a chemically-crosslinked γ-polyglutamic acid as an effective ingredient, as well as a process for preventing organ from adhesion comprising a step of bringing the adhesion-preventing agent into contact with or depositing the same onto the surface of a local organ and optionally the neighborhood thereof to be prevented from the post-operative adhesion. According to the present invention, there is provided an adhesion-preventing agent which is capable of effectively preventing the surfaces of organs from adhesion, and which can be absorbed in the body with high safety and be produced with ease and has high practical usefulness, as well as a process for preventing organ from adhesion by using the adhesion-preventing agent.
摘要翻译：公开了包含化学交联的γ-聚谷氨酸作为有效成分的器官粘附防止剂，以及防止器官粘连的方法，包括使防粘连剂与其接触或沉积的步骤在局部器官的表面上，并且可选地，其附近被防止术后粘连。根据本发明，提供了一种能够有效地防止器官表面粘附的粘合防止剂，其能够以高安全性被吸收在体内，易于制造，实用性高，作为以及通过使用防粘连剂防止器官粘连的方法。

53. 发明申请

US20080203402A1 SiC semiconductor device and method for manufacturing the same 有权
标题翻译： SiC半导体器件及其制造方法
公开(公告)号：US20080203402A1
公开(公告)日：2008-08-28
申请号：US12071717
申请日：2008-02-26
申请人： Takeshi Endo , Tsuyoshi Yamamoto , Eiichi Okuno
发明人： Takeshi Endo , Tsuyoshi Yamamoto , Eiichi Okuno
IPC分类号： H01L29/15 , H01L21/3205 , H01L21/336
CPC分类号： H01L29/7828 , H01L21/049 , H01L29/045 , H01L29/0847 , H01L29/1608 , H01L29/51 , H01L29/66068
摘要： A SiC semiconductor device includes: a SiC substrate having a main surface; a channel region on the substrate; first and second impurity regions on upstream and downstream sides of the channel region, respectively; a gate on the channel region through a gate insulating film. The channel region for flowing current between the first and second impurity regions is controlled by a voltage applied to the gate. An interface between the channel region and the gate insulating film has a hydrogen concentration equal to or greater than 2.6×1020 cm−3. The interface provides a channel surface perpendicular to a (0001)-orientation plane.
摘要翻译： SiC半导体器件包括：具有主表面的SiC衬底; 衬底上的沟道区; 分别在通道区域的上游侧和下游侧的第一和第二杂质区域; 通过栅极绝缘膜在沟道区上形成栅极。用于在第一和第二杂质区域之间流动电流的沟道区域由施加到栅极的电压来控制。沟道区域和栅极绝缘膜之间的界面的氢浓度等于或大于2.6×10 20 cm -3。界面提供垂直于（0001）取向平面的通道表面。

54. 发明授权

US07337068B2 Global classification of sonic logs 有权
标题翻译：声波测井全球分类
公开(公告)号：US07337068B2
公开(公告)日：2008-02-26
申请号：US11010204
申请日：2004-12-10
申请人： Henri-Pierre Valero , Alain Brie , Takeshi Endo
发明人： Henri-Pierre Valero , Alain Brie , Takeshi Endo
IPC分类号： G01V1/00
CPC分类号： G01V1/48
摘要： A method of determining the sonic slowness of a formation traversed by a borehole comprising generating tracks from sonic waveform peaks received at a plurality of depths wherein the peaks that are not classified prior to tracking is set forth. A method for generating a slowness versus depth log is generated for waveform arrivals by classifying long tracks, classifying small tracks; classifying tracks that overlap; filling in gaps; and creating a final log is disclosed. In further improvements, non-classified tracks and interpolation are used to fill in gaps.
摘要翻译：确定由钻孔穿过的地层的声音慢度的方法包括从在多个深度处接收的声波波形峰值产生轨迹，其中在跟踪之前未分类的峰值被阐述。通过对长轨道进行分类，对小轨迹进行分类，生成波形到达时间的生成慢度对深度对数的方法; 分类重叠的曲目; 填补空白; 并且公开了创建最终日志。在进一步的改进中，使用非分类轨迹和内插填补空白。

55. 发明申请

US20070195212A1 LASER EXPOSURE DEVICE AND OPTICAL AXIS ADJUSTMENT METHOD IN LASER EXPOSURE DEVICE 有权
标题翻译：激光曝光装置和激光曝光装置中的光轴调整方法
公开(公告)号：US20070195212A1
公开(公告)日：2007-08-23
申请号：US11675421
申请日：2007-02-15
申请人： Takeshi Endo , Takahiro Kojima , Kazutoshi Takahashi
发明人： Takeshi Endo , Takahiro Kojima , Kazutoshi Takahashi
IPC分类号： G02F1/1335
CPC分类号： G03G15/04072 , G03G15/0435
摘要： In a laser exposure device according to the present invention, a positioning pin, which is formed in a lens holder supporting a lens system, is inserted through an elongated hole for restriction of a board holder supporting a laser diode. An eccentric cam is inserted into an elongated hole for rotation movement formed in a board holder and a circular hole for rotation movement which is formed in the lens holder and which faces the elongated hole for rotation movement. An eccentric cam is inserted into an elongated hole for slide movement formed in the board holder and a circular hole for slide movement which is formed in the lens holder and which faces the elongated hole for slide movement. The eccentric cams are rotated to relatively move the board holder and lens holder with respect to each other to thereby establish alignment between the optical axes of the laser diode and lens system. In a state where the eccentric cams are fitted into the elongated holes, the board holder and lens holder are fixed to each other by screws.
摘要翻译：在根据本发明的激光曝光装置中，形成在支撑透镜系统的透镜支架中的定位销被插入通过长孔，用于限制支撑激光二极管的板支架。偏心凸轮被插入到用于旋转运动的长孔中，形成在板保持器中的旋转运动和用于旋转运动的圆形孔，其形成在透镜保持器中并面向用于旋转运动的细长孔。偏心凸轮被插入到用于滑动运动的细长孔中，形成在板保持器中，并且用于滑动运动的圆形孔形成在透镜保持器中并面对用于滑动运动的长孔。偏心凸轮旋转以相对于彼此相对地移动板保持器和透镜保持器，从而在激光二极管和透镜系统的光轴之间建立对准。在将偏心凸轮装配到细长孔中的状态下，通过螺钉将板保持器和透镜保持器彼此固定。

56. 发明授权

US07233422B2 Image display apparatus 有权
标题翻译：图像显示装置
公开(公告)号：US07233422B2
公开(公告)日：2007-06-19
申请号：US10602289
申请日：2003-06-24
申请人： Takeshi Endo , Tetsuya Noda , Yasushi Tanijiri
发明人： Takeshi Endo , Tetsuya Noda , Yasushi Tanijiri
IPC分类号： G02B5/32
CPC分类号： G02B27/0172 , G02B5/32 , G02B2027/0123 , G02B2027/0132 , G02B2027/0174 , G02B2027/0178
摘要： An image display apparatus has: a display element for displaying an image; a light source section for supplying an illumination light to the display element; a reflection type hologram for diffracting and reflecting the illumination light so as to guide the illumination light to the display element; and an eyepiece optical system for guiding an image light from the display element to an eye of a viewer so as to provide an enlarged virtual image of the image. The reflection type hologram has diffusing properties. Since the reflection type hologram diffuses the illumination light, an incident angle of the illumination light with respect to the display element is widened to a certain extent. Since the display element does not change a propagating direction of a light ray, a propagating direction of the image light is widened similarly to widening of the incident angle, thereby enlarging the observation pupil.
摘要翻译：图像显示装置具有：显示图像的显示元件; 用于向显示元件提供照明光的光源部; 用于衍射和反射照明光以将照明光引导到显示元件的反射型全息图; 以及用于将来自显示元件的图像光引导到观看者的眼睛的目镜光学系统，以便提供图像的放大的虚像。反射型全息图具有扩散性。由于反射型全息图漫射照明光，照明光相对于显示元件的入射角度被扩大到一定程度。由于显示元件不改变光线的传播方向，所以与入射角度的加宽类似，图像光的传播方向变宽，从而扩大观察光瞳。

57. 发明申请

US20060241253A1 Zero valent metal initiated gas-phase deposition polymerization 失效
标题翻译：零价金属引发气相沉积聚合
公开(公告)号：US20060241253A1
公开(公告)日：2006-10-26
申请号：US11318933
申请日：2005-12-27
申请人： Haruo Nishida , Yoshito Andou , Takeshi Endo , Mikio Yasutake
发明人： Haruo Nishida , Yoshito Andou , Takeshi Endo , Mikio Yasutake
IPC分类号： C08F4/72
CPC分类号： C08F2/34 , Y10S526/901
摘要： The present invention relates to a method for preparing polymers by gas-phase deposition polymerization, initiated by a zero valent metal and an initiator.
摘要翻译：本发明涉及一种由零价金属和引发剂引发的气相沉积聚合制备聚合物的方法。

58. 发明申请

US20060237751A1 Image pickup device, image pickup unit and image pickup apparatus 失效
标题翻译：图像拾取装置，图像拾取单元和图像拾取装置
公开(公告)号：US20060237751A1
公开(公告)日：2006-10-26
申请号：US11409431
申请日：2006-04-21
申请人： Takashi Morimoto , Naoki Kubo , Kouichi Ishida , Satoru Hirose , Takeshi Endo
发明人： Takashi Morimoto , Naoki Kubo , Kouichi Ishida , Satoru Hirose , Takeshi Endo
IPC分类号： H01L27/148
CPC分类号： H01L27/14623 , H01L27/14603 , H01L27/14643 , H01L27/14843 , H01L27/1485 , H04N5/238
摘要： An image pickup device wherein the range in the amount of incident light (dynamic range) for obtaining an appropriate image can be expanded, and shutter and aperture functions are provided. A light shielding element for light shielding a photoelectric conversion section and an actuator for driving the light shielding element are provided on the pixel of the image pickup device using the MEMS technology, and the amount of light shielding is controlled for each pixel, whereby the dynamic range is expanded, and shutter and aperture functions are also provided.
摘要翻译：一种图像拾取装置，其中可以扩大用于获得适当图像的入射光量（动态范围）的范围，并且提供快门和光圈功能。使用MEMS技术在图像拾取装置的像素上设置用于遮光光电转换部分的光屏蔽元件和用于驱动遮光元件的致动器，并且对每个像素控制光屏蔽量，由此动态范围扩大，并提供快门和光圈功能。

59. 发明授权

US07023592B2 Band-pass filter and image display apparatus 有权
公开(公告)号：US07023592B2
公开(公告)日：2006-04-04
申请号：US10294157
申请日：2002-11-14
申请人： Tetsuya Noda , Yasushi Tanijiri , Takeshi Endo , Hiroaki Ueda
发明人： Tetsuya Noda , Yasushi Tanijiri , Takeshi Endo , Hiroaki Ueda
IPC分类号： G02B5/32
CPC分类号： G02B5/28 , G02B5/32
摘要： A band-pass filter has a reflecting optical element having a fixed reflection angle selection region for wavelengths of a given region, and has an optical path such that reflection is performed at least once and transmission is performed at least once at the reflecting optical element.

60. 发明授权

US06714480B2 Determination of anisotropic moduli of earth formations 有权
标题翻译：地球各向异性模量的测定
公开(公告)号：US06714480B2
公开(公告)日：2004-03-30
申请号：US10091657
申请日：2002-03-06
申请人： Bikash K. Sinha , Colin Michael Sayers , Takeshi Endo
发明人： Bikash K. Sinha , Colin Michael Sayers , Takeshi Endo
IPC分类号： G01V140
CPC分类号： G01V1/48
摘要： A method for determining properties of a transverse isotropic region of earth formations traversed by a wellbore having substantially vertical and deviated sections therethrough, including measuring sonic velocity properties in formations surrounding the substantially vertical section of the wellbore; measuring sonic velocity properties in formations surrounding the deviated section of the wellbore; and determining, from the measured velocities, all of the transverse isotropic elastic constants of the region.
摘要翻译：一种用于确定由具有基本上垂直和偏离的部分通过其穿过的井筒穿过的地层的横向各向同性区域的性质的方法，包括测量围绕所述井筒的基本竖直部分的地层中的声速特性; 测量围绕井筒偏离部分的地层中的声速特性; 并从测量的速度确定该区域的所有横向各向同性弹性常数。

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