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    • 57. 发明授权
    • .OMEGA.silylalkynyl silane compound and method for preparation thereof
    • OMEGA甲硅烷基炔基硅烷化合物及其制备方法
    • US4921989A
    • 1990-05-01
    • US359897
    • 1989-06-01
    • Toshinobu IshiharaMikio EndoTohru KubotaYasuhisa Tanaka
    • Toshinobu IshiharaMikio EndoTohru KubotaYasuhisa Tanaka
    • C07F7/12C07F7/18
    • B82Y30/00B82Y40/00C07F7/12C07F7/1832C07F7/1836
    • The novel organosilicon compound of the invention is an .omega.-silylalkynyl silane compound represented by the general formula R.sub.3 SiC.tbd.C(CH.sub.2).sub.n Si(CH.sub.3).sub.m X.sub.3-m, in which each R is, independently from the others, a hydrogen atom, lower alkyl group or aryl group, X is a halogen atom or a lower alkoxy group, the subscript m is 0,1 or 2 and the subscript n is an integer in the range from 10 to 30 which forms a uniform monomolecular layer on a substrate surface with silyl ethynyl groups arranged in alignment. The compound can be prepared by a Grignard reaction starting form an .omega.-silylalkynyl halide represented by the general formula R.sub.3 SiC.tbd.C(CH.sub.2).sub.n Y, in which R and n each have the same meaning as defined above and Y is a halogen atom, and a methyl alkoxy or halosilane of the formula (CH.sub.3).sub.m SiX.sub.4-m, in which X and m each have the same meaning as defined before.
    • 本发明的新型有机硅化合物是通式为R 3 SiC 3 CF(CH 2)n Si(CH 3)m X 3-m表示的ω-甲硅烷基炔基硅烷化合物,其中R各自独立地为氢原子,低级烷基 基团或芳基,X为卤素原子或低级烷氧基,下标m为0,1或2,下标n为10〜30的整数,在基材表面上形成均匀的单分子层, 甲硅烷基乙炔基排列成对齐。 该化合物可以通过由通式R3SiC 3BOND C(CH2)nY表示的ω-甲硅烷基炔基卤化物的格利雅反应制备,其中R和n各自具有与上述相同的含义,Y是卤素原子, 式(CH3)mSiX4-m的甲基烷氧基或卤代硅烷,其中X和m各自具有与上述相同的含义。
    • 60. 发明申请
    • METHOD FOR PURIFYING CHLOROSILANES
    • 纯化氯霉素的方法
    • US20120121493A1
    • 2012-05-17
    • US13386926
    • 2010-07-07
    • Naoki NagaiTakaaki ShimizuKatsuhiro UeharaTohru Kubota
    • Naoki NagaiTakaaki ShimizuKatsuhiro UeharaTohru Kubota
    • C01B33/107
    • C01B33/10778
    • The present invention provides a method for obtaining high purity chlorosilanes from chlorosilanes containing boron impurities and phosphorus impurities. On the basis of the finding that solid by-product formation in the purification of chlorosilanes by adding an aromatic aldehyde results from a catalytic reaction by iron ions or rust-like iron, a Lewis base having a masking effect is added to chlorosilanes. Examples of the Lewis base include a divalent sulfur-containing compound and an alkoxysilane. The divalent sulfur-containing compound is preferably a compound represented by the formula: R—S—R′ (wherein R is a hydrocarbon group or a carbonyl group; and the sum of the carbon atoms in R and R′ is 7 or more), and the alkoxysilane is preferably a compound represented by the formula: RxSi(OR′)4-x (wherein R and R′ are each an alkyl group having 1 to 20 carbon atoms).
    • 本发明提供从含有硼杂质和磷杂质的氯硅烷中获得高纯度氯硅烷的方法。 基于通过添加芳族醛的氯硅烷纯化产生固体副产物的结果是由铁离子或铁锈铁的催化反应产生的,将具有掩蔽效应的路易斯碱加入到氯硅烷中。 路易碱碱的实例包括二价含硫化合物和烷氧基硅烷。 二价含硫化合物优选为由下式表示的化合物:R-S-R'(其中R为烃基或羰基; R和R'中的碳原子总数为7以上) 烷氧基硅烷优选为下式所示的化合物:RxSi(OR')4-x(式中,R和R'分别为碳原子数为1〜20的烷基)。