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51. 发明授权

US08116618B2 Heating apparatus, substrate processing apparatus, and method of manufacturing semiconductor devices 有权
标题翻译：加热装置，基板处理装置以及半导体装置的制造方法
公开(公告)号：US08116618B2
公开(公告)日：2012-02-14
申请号：US12213823
申请日：2008-06-25
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
IPC分类号： A45D20/40 , A21B2/00
CPC分类号： H01L21/67109 , H01L21/67115
摘要： A heating apparatus comprises a wall for surrounding and defining a heating space, a heating element mounted on the inner side of the wall, reflecting members for reflecting the heat emitted from the heating element. Also, a moving unit joined to one end of each of the reflecting members for moving the reflecting members. Moreover, pivotal members joined to the reflecting members beside more their respective other side than one side of the reflecting members for controlling as pivots the movement of the reflecting member driven by the moving unit.
摘要翻译：加热装置包括用于围绕和限定加热空间的壁，安装在壁的内侧上的加热元件，用于反射从加热元件发出的热的反射构件。而且，移动单元连接到每个反射构件的一端以移动反射构件。此外，枢转构件在反射构件的相对另一侧更靠近反射构件的一侧接合，用于控制由移动单元驱动的反射构件的运动。

52. 发明申请

US20120011353A1 INFORMATION PROCESSING APPARATUS HAVING VERIFICATION CAPABILITY OF CONFIGURATION CHANGE 有权
标题翻译：具有配置更改验证能力的信息处理设备
公开(公告)号：US20120011353A1
公开(公告)日：2012-01-12
申请号：US13238744
申请日：2011-09-21
申请人： Akira Hayashida
发明人： Akira Hayashida
IPC分类号： G06F9/00
CPC分类号： G06F21/57
摘要： An information processing apparatus having a verification capability of a configuration change. The information processing apparatus includes: a configuration storage unit to store information on components having been connected to the information processing apparatus as reference configuration information; a detecting unit to detect configuration information on components being connected to the information processing apparatus in booting; a comparing unit to compare, detected configuration information and the reference configuration information when the information processing apparatus is booted; a boot control unit to terminate booting of the information processing apparatus when an unequal comparison occurs; a monitoring unit to monitor, after the information processing apparatus is booted, a configuration change of the information processing apparatus in operation; and a dynamic update unit to update, when the configuration change of the information processing apparatus in operation is recognized, the reference configuration information with configuration information of the configuration-changed information processing apparatus.
摘要翻译：具有配置改变的验证能力的信息处理装置。信息处理设备包括：配置存储单元，用于存储关于已经连接到信息处理设备的组件的信息作为参考配置信息; 检测单元，用于检测在启动时连接到信息处理设备的组件的配置信息; 比较单元，用于在信息处理设备启动时比较检测到的配置信息和参考配置信息; 引导控制单元，用于在发生不等的比较时终止信息处理设备的引导; 监视单元，用于在所述信息处理装置启动之后监视所述信息处理装置的运行中的配置更改; 以及动态更新单元，当识别出运行中的信息处理装置的配置更改时，更新具有配置改变信息处理设备的配置信息的参考配置信息。

53. 发明授权

US07700054B2 Substrate processing apparatus having gas side flow via gas inlet 有权
标题翻译：具有通过气体入口的气体侧流动的基板处理装置
公开(公告)号：US07700054B2
公开(公告)日：2010-04-20
申请号：US11987493
申请日：2007-11-30
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Yukinori Aburatani , Tomoyuki Yamada , Seiyo Nakashima , Masashi Sugishita
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Yukinori Aburatani , Tomoyuki Yamada , Seiyo Nakashima , Masashi Sugishita
IPC分类号： H01L21/00 , B01J19/00 , F27B5/14
CPC分类号： H01L21/67109 , F27B17/0025
摘要： An object of the present invention is to improve substrate processing efficiency. A substrate processing apparatus has a reaction tube that processes a substrate inside, and a heating apparatus disposed so as to surround an external periphery of the reaction tube, so that at least a gas inlet tube is disposed on a side surface in an area in which the substrate is processed inside the reaction tube, and the heating apparatus has a heat insulator that surrounds the reaction tube, an inlet opening formed in the shape of a groove in the heat insulator from the lower end of the heating apparatus so as to avoid the gas inlet tube, and a heating element disposed between the heat insulator and the reaction tube.
摘要翻译：本发明的目的是提高基板处理效率。基板处理装置具有处理内部的基板的反应管和设置成围绕反应管的外周的加热装置，使得至少一个气体入口管设置在其中的在反应管内加工基板，加热装置具有围绕反应管的绝热体，从加热装置的下端形成为绝热体的槽状的入口开口，以避免气体入口管和设置在隔热件和反应管之间的加热元件。

54. 发明申请

US20090291566A1 Substrate Processing Apparatus, Coolant Gas Supply Nozzle and Semiconductor Device Manufacturing Method 有权
标题翻译：基板处理装置，冷却剂气体供给喷嘴和半导体装置制造方法
公开(公告)号：US20090291566A1
公开(公告)日：2009-11-26
申请号：US11989698
申请日：2006-07-19
申请人： Masaaki Ueno , Akira Hayashida , Masakazu Shimada , Takenori Oka
发明人： Masaaki Ueno , Akira Hayashida , Masakazu Shimada , Takenori Oka
IPC分类号： H01L21/477 , C23C16/00
CPC分类号： H01L21/67769 , C23C16/463 , C23C16/54 , H01L21/67109
摘要： A substrate processing apparatus comprises a processing chamber for storing a boat supporting multiple substrates and for processing the multiple substrates, a heater unit installed around the processing chamber for heating the substrates, and a coolant gas supply nozzle including a pipe section extending perpendicular to a main surface of the substrate supported in the boat stored in the processing chamber, and a spray hole formed on the pipe section for spraying coolant gas to at least two of the multiple substrates, wherein the coolant gas supply nozzle is formed so that the cross sectional area of the pipe section in the area where the spray hole is formed is larger than the total opening area of the spray hole.
摘要翻译：基板处理装置包括：处理室，用于存储支撑多个基板并用于处理多个基板的船;加热器单元，安装在处理室周围用于加热基板;以及冷却剂气体供给喷嘴，其包括垂直于主体的管段支撑在存储在处理室中的舟皿中的基板的表面，以及形成在管段上用于将冷却剂气体喷射到多个基板中的至少两个的喷射孔，其中冷却剂气体供给喷嘴形成为横截面积在喷孔形成区域中的管段大于喷孔的总开口面积。

55. 发明授权

US5599892A Preparation of polysilanes 失效
标题翻译：聚硅烷的制备
公开(公告)号：US5599892A
公开(公告)日：1997-02-04
申请号：US539757
申请日：1995-10-06
申请人： Akira Hayashida
发明人： Akira Hayashida
IPC分类号： C08G77/60 , C08G77/00
CPC分类号： C08G77/60
摘要： In a process for preparing a polysilane from a diorganodihalosilane and an alkali metal, a low molecular weight polysilane results from the process as a by-product. The low molecular weight polysilane is further reacted with an alkali metal for conversion into a high molecular weight polysilane.
摘要翻译：在从二有机二卤硅烷和碱金属制备聚硅烷的方法中，低分子量聚硅烷作为副产物由该方法得到。低分子量聚硅烷进一步与碱金属反应以转化为高分子量聚硅烷。

56. 发明授权

US5296418A Method for manufacturing a hafnium-containing silazane polymer and a method for manufacturing a ceramic from said polymer 失效
标题翻译：含铪硅氮烷聚合物的制造方法和由所述聚合物制造陶瓷的方法
公开(公告)号：US5296418A
公开(公告)日：1994-03-22
申请号：US951571
申请日：1992-10-23
申请人： Yoshihumi Takeda , Akira Hayashida
发明人： Yoshihumi Takeda , Akira Hayashida
IPC分类号： C04B35/571 , C04B35/589 , C08G77/48 , C08G77/60 , D01F9/10 , C04B35/56
CPC分类号： C04B35/589 , C08G77/60
摘要： A hafnium-containing silazane polymer is obtained through a polymerization reaction of which the reactants are(A) a halide of an organic silicon compound;(B) a hafnium compound having a the formula:HfX.sub.4 [I]wherein X is chlorine or bromine, and(C) a disilazane having the formula: ##STR1## wherein R.sub.1, R.sub.2 and R.sub.3 may be the same or different and are hydrogen, methyl ethyl, phenyl or vinyl.
摘要翻译：通过聚合反应获得含铪硅氮烷聚合物，其反应物为（A）有机硅化合物的卤化物; （B）具有下式的铪化合物：其中X是氯或溴的HfX4（I），和（C）具有下式的二硅氮烷：（*化学结构*）（II）其中R1，R2和R3可以是是氢，甲基乙基，苯基或乙烯基。

57. 发明授权

US5237033A Preparation of polysilanes 失效
标题翻译：聚硅烷的制备
公开(公告)号：US5237033A
公开(公告)日：1993-08-17
申请号：US850641
申请日：1992-03-13
申请人： Eiichi Tabei , Shigeru Mori , Akira Hayashida , Motoo Fukushima
发明人： Eiichi Tabei , Shigeru Mori , Akira Hayashida , Motoo Fukushima
IPC分类号： C08G77/60
CPC分类号： C08G77/60
摘要： Polysilanes are synthesized by reacting dihalosilanes in the presence of alkali metal particles while using copper powder, cuprous oxide, cupric oxide, or an organic copper compound as a catalyst. There are obtained high molecular weight polysilanes in high yields.
摘要翻译：聚硅烷通过在碱金属颗粒存在下使二卤代硅烷反应而合成，同时使用铜粉，氧化亚铜，氧化铜或有机铜化合物作为催化剂。以高产率获得高分子量聚硅烷。

58. 发明授权

US5162477A Preparation of polyorganosilanes 失效
标题翻译：聚有机硅烷的制备
公开(公告)号：US5162477A
公开(公告)日：1992-11-10
申请号：US812284
申请日：1991-12-23
申请人： Shigeru Mori , Eiichi Tabei , Akira Hayashida , Yoshinori Hida , Motoo Fukushima
发明人： Shigeru Mori , Eiichi Tabei , Akira Hayashida , Yoshinori Hida , Motoo Fukushima
IPC分类号： C08G77/48 , C08G77/60
CPC分类号： C08G77/60
摘要： Polyorganosilanes are prepared by contact reaction of organodihalosilanes with alkali metal fine particles in an organic solvent. Prior to the contact reaction, a triorganohalosilane is contacted with the dispersion of alkali metal fine particles in organic solvent for removing reactive oxygen and moisture from the dispersion. Formation of a siloxane bond in the polysilane backbone is minimized, and polyorganosilanes having a minimal oxygen content are obtained.
摘要翻译：聚有机硅烷通过有机二硅烷与碱金属微粒在有机溶剂中的接触反应来制备。在接触反应之前，三有机卤代硅烷与碱金属微粒分散体在有机溶剂中接触，以从分散体除去活性氧和水分。聚硅烷主链中硅氧烷键的形成最小化，得到氧含量最低的聚有机硅烷。

59. 发明授权

US5097055A Production of methylphenyltrisiloxane 失效
标题翻译：甲基苯基硅氧烷的生产
公开(公告)号：US5097055A
公开(公告)日：1992-03-17
申请号：US680696
申请日：1991-04-04
申请人： Katsuhiro Uehara , Toshinobu Ishihara , Jiyunitirow Maruta , Akira Hayashida
发明人： Katsuhiro Uehara , Toshinobu Ishihara , Jiyunitirow Maruta , Akira Hayashida
IPC分类号： C07F7/08
CPC分类号： C07F7/0874
摘要： A process of producing a methylphenyltrisiloxane having the following general formula: ##STR1## wherein R.sup.1 and R.sup.2 may be the same or different and are each a methyl or phenyl group, the process comprising the step of reacting:(A) methyldiphenylsilanol, with(B) a silazane compound having a diorganosilazane unit having the following formula: ##STR2## wherein R.sup.1 and R.sup.2 are as defined above. According to the process, colorless and odorless methylphenyltrisiloxanes can be obtained easily, safely and economically, without any special deodorizing or decoloring step.

60. 发明授权

US4975392A Method for manufacturing silicon carbide whisker 失效
标题翻译：碳化硅晶须的制造方法
公开(公告)号：US4975392A
公开(公告)日：1990-12-04
申请号：US439276
申请日：1989-11-20
申请人： Motoyuki Yamada , Kazutoshi Numanami , Takahiro Iizuka , Akira Hayashida
发明人： Motoyuki Yamada , Kazutoshi Numanami , Takahiro Iizuka , Akira Hayashida
IPC分类号： C30B29/62 , C30B25/00
CPC分类号： C30B25/005 , C30B29/36
摘要： A method for manufacturing silicon carbide whisker which has a cross-sectional diameter of greater than about 1 .mu.m by mixing a source of silicon atom in the form of grains having a mean grain diameter of at least 50 .mu.m with a carbon atom source in the presence of an element or compound of the element, the element being yttrium, calcium, manganese, aluminum, indium, or rare earth elements in an amount from about 100 to 2,000 ppm and growing the silicon carbide whisker therefrom.
摘要翻译：通过将平均粒径为至少50μm的颗粒形式的硅原子源与碳原子源混合，制造具有大于约1μm的截面直径的碳化硅晶须的方法，元素的元素或化合物的存在，元素是约100至2,000ppm的量的钇，钙，锰，铝，铟或稀土元素，并从中生长碳化硅晶须。

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