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51. 发明申请

US20090267441A1 Rotating Electrical Machine 有权
标题翻译：旋转电机
公开(公告)号：US20090267441A1
公开(公告)日：2009-10-29
申请号：US12370082
申请日：2009-02-12
申请人： Hiromichi HIRAMATSU , Takashi Ishigami , Yasuyuki Saito , Yuichiro Tanaka , Kenichi Nakayama , Yutaka Matsunobu , Noriaki Hino
发明人： Hiromichi HIRAMATSU , Takashi Ishigami , Yasuyuki Saito , Yuichiro Tanaka , Kenichi Nakayama , Yutaka Matsunobu , Noriaki Hino
IPC分类号： H02K3/28 , H02K3/34
CPC分类号： H02K3/28 , H02K15/066
摘要： A rotating electrical machine includes a stator including at least two element coils of the same phase each having a plurality of turns and connected to each other through a coil-to-coil connection wire, the element coils being arranged in adjacent slots, respectively; and a rotor rotatably provided to the stator through a gap. The element coils of the same phase are fitted in the adjacent slots so that wound around portions of the element coils partially overlap each other. The coil-to-coil connection wire connects at a coil end portion conductor wires extending from linear conductor wire portions of innermost wires of the element coils contained in the slots.
摘要翻译：旋转电机包括：定子，其包括相同相的至少两个元件线圈，每个元件线圈具有多个匝并且通过线圈与线圈连接线彼此连接，元件线圈分别布置在相邻的插槽中; 以及通过间隙可旋转地设置在定子上的转子。相同相位的元件线圈被装配在相邻的槽中，使得围绕元件线圈的部分缠绕部分地彼此重叠。线圈到线圈连接线在线圈端部处连接，导线从包含在槽中的元件线圈的最内部线的线性导线部分延伸。

52. 发明授权

US07306503B2 Method and apparatus of fixing carbon fibers on a substrate using an aerosol deposition process 失效
标题翻译：使用气溶胶沉积工艺将碳纤维固定在基底上的方法和装置
公开(公告)号：US07306503B2
公开(公告)日：2007-12-11
申请号：US10676086
申请日：2003-10-02
申请人： Yasuyuki Saito , Junri Ishikura
发明人： Yasuyuki Saito , Junri Ishikura
IPC分类号： H01J9/00 , B05B5/025
CPC分类号： B82Y30/00 , B01J19/088 , B01J2219/0809 , B01J2219/0839 , B82Y40/00 , C01B32/162 , D01F9/12 , Y10S977/89 , Y10S977/892
摘要： Evaporation and condensation of carbon is effected by arc discharge between an anode formed of a carbon electrode and a cathode disposed facing the carbon electrode 2 in an inert gas atmosphere, and at the same time, the generated carbon nanotubes are dispersed into an inert gas and transported along with the inert gas through a transporting tube, and a jet of the inert gas containing the carbon nanotubes is emitted from a nozzle, thereby forming carbon nanotubes on a target substrate. This provides a carbon nanotube manufacturing method wherein carbon nanotubes are generated with a simple process, and the CNT patterning process is simplified by forming a carbon nanotube film on a substrate, thereby reducing costs.
摘要翻译：碳的蒸发和冷凝通过在由碳电极形成的阳极和在惰性气体气氛中与碳电极2相对设置的阴极之间的电弧放电来实现，同时将生成的碳纳米管分散在惰性气体中，通过输送管与惰性气体一起输送，并且从喷嘴喷射含有碳纳米管的惰性气体的射流，从而在靶基板上形成碳纳米管。这提供了通过简单的工艺生成碳纳米管的碳纳米管制造方法，并且通过在基板上形成碳纳米管膜来简化CNT图案化工艺，从而降低成本。

53. 发明申请

US20070159914A1 Semiconductor integrated circuit 有权
公开(公告)号：US20070159914A1
公开(公告)日：2007-07-12
申请号：US11708346
申请日：2007-02-21
申请人： Naoki Yada , Yasuyuki Saito , Yasushi Shibatsuka , Katsunori Koike , Mitsuhiko Okutsu
发明人： Naoki Yada , Yasuyuki Saito , Yasushi Shibatsuka , Katsunori Koike , Mitsuhiko Okutsu
IPC分类号： G11C8/00
CPC分类号： H03L7/08 , G06F1/08 , G11C7/04 , G11C7/22 , G11C7/222 , G11C2207/2254 , H03K3/0315 , H03K5/133 , H03K5/2481 , H03K2005/00039 , H03K2005/00143 , H03L7/085
摘要： A semiconductor integrated circuit includes a memory circuit, an oscillator circuit which generates an internal clock signal, based on control information held in the memory circuit, and a logic circuit which generates control information that causes the frequency of the internal clock signal to coincide with the frequency of an external clock signal. The internal clock signal is used for a synchronous operation of an internal circuit. Even if an error (undesired variation) occurs in the oscillation characteristic of the oscillator circuit due to process variations, it is possible to cause an internal clock signal frequency to coincide with an external clock signal frequency corresponding to a target frequency without the need for external attachment of a crystal oscillator and the input of an external clock signal.

54. 发明授权

US07196967B2 Semiconductor integrated circuit 有权
公开(公告)号：US07196967B2
公开(公告)日：2007-03-27
申请号：US11446217
申请日：2006-06-05
申请人： Naoki Yada , Yasuyuki Saito , Yasushi Shibatsuka , Katsunori Koike , Mitsuhiko Okutsu
发明人： Naoki Yada , Yasuyuki Saito , Yasushi Shibatsuka , Katsunori Koike , Mitsuhiko Okutsu
IPC分类号： G11C8/18
CPC分类号： H03L7/08 , G06F1/08 , G11C7/04 , G11C7/22 , G11C7/222 , G11C2207/2254 , H03K3/0315 , H03K5/133 , H03K5/2481 , H03K2005/00039 , H03K2005/00143 , H03L7/085
摘要： A semiconductor integrated circuit includes a memory circuit, an oscillator circuit which generates an internal clock signal, based on control information held in the memory circuit, and a logic circuit which generates control information that causes the frequency of the internal clock signal to coincide with the frequency of an external clock signal. The internal clock signal is used for a synchronous operation of an internal circuit. Even if an error (undesired variation) occurs in the oscillation characteristic of the oscillator circuit due to process variations, it is possible to cause an internal clock signal frequency to coincide with an external clock signal frequency corresponding to a target frequency without the need for external attachment of a crystal oscillator and the input of an external clock signal.

55. 发明授权

US07005047B2 Film deposition apparatus and film deposition method 失效
公开(公告)号：US07005047B2
公开(公告)日：2006-02-28
申请号：US10421777
申请日：2003-04-24
申请人： Junri Ishikura , Makoto Kameyama , Yasuyuki Saito
发明人： Junri Ishikura , Makoto Kameyama , Yasuyuki Saito
IPC分类号： C23C14/00
CPC分类号： C23C14/228 , C23C14/325 , H05H1/48 , H05H2001/483 , H05H2245/124
摘要： A particle film deposition apparatus and method are provided, with which ultra fine particles are generated by arc heating. The generated ultra fine particles can be efficiently sucked up into a transfer tube regardless of an arc voltage, and the resulting film can be stable in shape. An evaporation material 8 to be evaporated by arc heating and to generate ultra fine particles is connected to an electrode. As other electrodes, a plurality of rods 17 each having a discharge section at the tip thereof are provided. These rods 17 are so arranged as to be directed in each different direction with respect to the evaporation material 8.

56. 发明申请

US20060022863A1 SEMICONDUCTOR INTEGRATED CIRCUIT 失效
标题翻译：半导体集成电路
公开(公告)号：US20060022863A1
公开(公告)日：2006-02-02
申请号：US11246170
申请日：2005-10-11
申请人： Naoki Yada , Yasuyuki Saito
发明人： Naoki Yada , Yasuyuki Saito
IPC分类号： H03M1/12
CPC分类号： H03M1/1023 , H03M1/46 , H03M1/682 , H03M1/765
摘要： A semiconductor integrated circuit including an A/D converter capable of converting an analog signal accepted through an external terminal into a digital signal. The A/D converter includes: a ladder-type resistor for generating a reference voltage; a set of first operational amplifiers, each accepts an output voltage of the ladder-type resistor; a set of first switches, each capable of short-circuiting an input terminal and an output terminal of corresponding one of the first operational amplifiers thereby to allow an offset correction of the corresponding first operational amplifier to be made; and a comparator circuit for comparing an output voltage of each of the first operational amplifiers with the analog signal. The A/D converter can reduce a current output from the ladder-type resistor and speed up charge and discharge of the sampling capacitor.
摘要翻译：一种包括能够将通过外部端子接收的模拟信号转换为数字信号的A / D转换器的半导体集成电路。 A / D转换器包括：用于产生参考电压的梯形电阻器; 一组第一运算放大器，每个接收梯形电阻器的输出电压; 一组第一开关，每个能够使第一运算放大器的相应一个输入端子和输出端子短路，从而允许相应的第一运算放大器的偏移校正; 以及用于将每个第一运算放大器的输出电压与模拟信号进行比较的比较器电路。 A / D转换器可以减少梯形电阻器的电流输出，并加快采样电容器的充电和放电。

57. 发明申请

US20050205696A1 Deposition apparatus and method 审中-公开
标题翻译：沉积装置和方法
公开(公告)号：US20050205696A1
公开(公告)日：2005-09-22
申请号：US11078302
申请日：2005-03-14
申请人： Yasuyuki Saito , Junri Ishikura
发明人： Yasuyuki Saito , Junri Ishikura
IPC分类号： B05D1/02 , B01J19/00 , B05B1/00 , B05B1/04 , B05B7/02
CPC分类号： B05B1/04
摘要： A nozzle has an inlet opening connected to a carrier pipe, an outlet opening for spraying an aerosol, and an aerosol-flow-controlling portion positioned between the inlet opening and the outlet opening. The aerosol-flow-controlling portion of the nozzle has an area which is smaller than an area of the inlet opening and which is larger than an area of the outlet opening to deposit a film with a uniform thickness.
摘要翻译：喷嘴具有连接到载体管的入口开口，用于喷射气溶胶的出口，以及位于入口和出口之间的气溶胶流控制部。喷嘴的气溶胶流动控制部分具有比入口开口面积小的面积，并且其面积大于出口开口的面积以沉积厚度均匀的膜。

58. 发明授权

US06774831B2 Analog switch circuit 失效
标题翻译：模拟开关电路
公开(公告)号：US06774831B2
公开(公告)日：2004-08-10
申请号：US10419923
申请日：2003-04-22
申请人： Yasuyuki Saito
发明人： Yasuyuki Saito
IPC分类号： H03M100
CPC分类号： H03K17/162 , G11C27/02 , G11C27/024 , H03K17/6872 , H03K17/6874 , H03K17/6877 , H03K17/693 , H03M1/46
摘要： An analog switch and an analog multiplexer are realized by which electron charges which have been stored in a stray capacitance provided on the output side thereof before a switch is conducted do not give an adverse influence to a level of such an analog input voltage which is subsequently entered after the switch has been switched. An analog switch circuit is arranged by insulating gate type transistors and a voltage follower which is parallel-connected to these insulating type transistors. When the analog switch circuit is turned ON, the voltage follower is firstly brought into an active state, and thereafter, these insulating gate type transistors are brought into conductive conditions.
摘要翻译：实现模拟开关和模拟多路复用器，其中在开关导通之前已经存储在其输出侧的杂散电容中的电子电荷不会对随后的模拟输入电压的电平产生不利影响开关切换后输入。模拟开关电路通过绝缘栅型晶体管和与这些绝缘型晶体管并联连接的电压跟随器来布置。当模拟开关电路接通时，电压跟随器首先进入有效状态，此后，这些绝缘栅型晶体管进入导通状态。

59. 发明授权

US5991221A Microcomputer and microprocessor having flash memory operable from single external power supply 失效
公开(公告)号：US5991221A
公开(公告)日：1999-11-23
申请号：US16300
申请日：1998-01-30
申请人： Eiichi Ishikawa , Yasuyuki Saito , Masanao Sato , Naoki Yada , Kiyoshi Matsubara
发明人： Eiichi Ishikawa , Yasuyuki Saito , Masanao Sato , Naoki Yada , Kiyoshi Matsubara
IPC分类号： G11C5/14 , G11C16/30 , G11C7/00
CPC分类号： G11C16/30 , G11C5/14 , G11C5/145
摘要： A microcomputer incorporating a flash memory which is erased and programmed electrically in a stable manner within a relatively wide range of external power supply voltages including those for low-voltage operations. The microcomputer comprises a voltage clamp unit including a reference voltage generating circuit and a constant voltage generating circuit. In operation, the voltage clamp unit generates a voltage of a low dependency on a supply voltage and clamps the generated voltage to a voltage level which, within a tolerable range, is lower than a single supply voltage externally furnished. This prevents voltages boosted by boosting circuits operating on the clamped voltage, i.e., programming and erasure voltages, from being dependent on the externally supplied voltage.

60. 发明授权

US5464789A Method of manufacturing a CMOS semiconductor device 失效
标题翻译：制造CMOS半导体器件的方法
公开(公告)号：US5464789A
公开(公告)日：1995-11-07
申请号：US95995
申请日：1993-07-23
申请人： Yasuyuki Saito
发明人： Yasuyuki Saito
IPC分类号： H01L21/336 , H01L21/265 , H01L21/3215 , H01L21/8238 , H01L27/092 , H01L29/78 , H01L21/76
CPC分类号： H01L21/823842 , H01L21/32155 , Y10S148/034
摘要： An improved method of manufacturing a semiconductor device, especially suitable for a p-channel MOS transistor is disclosed. The method includes the steps of forming a gate oxide film over the surface of a semiconductor substrate in a region where a p-channel MOS transistor is to be formed, forming a polysilicon film over the gate oxide film, in order to construct a gate electrode, forming a film of an amorphous material over the polysilicon film and implanting ions of a p-type impurity, especially elemental boron atoms, into the polysilicon film, through the film of amorphous material.
摘要翻译：公开了一种改进的制造半导体器件的方法，特别适用于p沟道MOS晶体管。该方法包括以下步骤：在要形成p沟道MOS晶体管的区域中在半导体衬底的表面上形成栅氧化膜，在栅极氧化膜上形成多晶硅膜，以构成栅电极在所述多晶硅膜上形成非晶材料的膜，并通过所述非晶材料膜将多晶硅膜中的p型杂质，特别是元素硼原子的离子注入所述多晶硅膜中。

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