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51. 发明授权

US08039909B2 Semiconductor nanowires charge sensor 有权
标题翻译：半导体纳米线充电传感器
公开(公告)号：US08039909B2
公开(公告)日：2011-10-18
申请号：US12324219
申请日：2008-11-26
申请人： Ali Afzali-Ardakani , Lidija Sekaric , George S. Tulevski
发明人： Ali Afzali-Ardakani , Lidija Sekaric , George S. Tulevski
IPC分类号： H01L27/14
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y15/00 , G01N27/041 , H01L29/0673
摘要： A semiconductor nanowire is coated with a chemical coating layer that comprises a functional material which modulates the quantity of free charge carriers within the semiconductor nanowire. The outer surface of the chemical coating layer includes a chemical group that facilitates bonding with molecules to be detected through electrostatic forces. The bonding between the chemical coating layer and the molecules alters the electrical charge distribution in the chemical coating layer, which alters the amount of the free charge carriers and the conductivity in the semiconductor nanowire. The coated semiconductor nanowire may be employed as a chemical sensor for the type of chemicals that bonds with the functional material in the chemical coating layer. Detection of such chemicals may indicate pH of a solution, a vapor pressure of a reactive material in gas phase, and/or a concentration of a molecule in a solution.
摘要翻译：半导体纳米线涂覆有化学涂层，其包含调节半导体纳米线内的自由电荷载体的量的功能材料。化学被膜层的外表面包括有助于通过静电力与要检测的分子结合的化学基团。化学涂层和分子之间的结合改变化学涂层中的电荷分布，其改变半导体纳米线中游离载流子的量和导电性。涂覆的半导体纳米线可以用作化学传感器，用于与化学涂层中的功能材料结合的化学品类型。这种化学物质的检测可以指示溶液的pH，气相中的反应物质的蒸汽压和/或溶液中分子的浓度。

52. 发明申请

US20110104860A1 SEMICONDUCTOR NANOWIRE WITH BUILT-IN STRESS 失效
标题翻译：半导体纳米管与内置应力
公开(公告)号：US20110104860A1
公开(公告)日：2011-05-05
申请号：US13004340
申请日：2011-01-11
申请人： Lidija Sekaric , Dureseti Chidambarrao , Xiao H. Liu
发明人： Lidija Sekaric , Dureseti Chidambarrao , Xiao H. Liu
IPC分类号： H01L21/336
CPC分类号： H01L29/775 , B82Y10/00 , H01L29/0673 , H01L29/42392 , H01L29/517 , H01L29/66439 , H01L29/7843 , H01L29/78696 , Y10S977/762 , Y10S977/938
摘要： A semiconductor nanowire having two semiconductor pads on both ends is suspended over a substrate. Stress-generating liner portions are formed over the two semiconductor pads, while a middle portion of the semiconductor nanowire is exposed. A gate dielectric and a gate electrode are formed over the middle portion of the semiconductor nanowire while the semiconductor nanowire is under longitudinal stress due to the stress-generating liner portions. The middle portion of the semiconductor nanowire is under a built-in inherent longitudinal stress after removal of the stress-generating liners because the formation of the gate dielectric and the gate electrode locks in the strained state of the semiconductor nanowire. Source and drain regions are formed in the semiconductor pads to provide a semiconductor nanowire transistor. A middle-of-line (MOL) dielectric layer may be formed directly on the source and drain pads.
摘要翻译：将两端具有两个半导体焊盘的半导体纳米线悬置在衬底上。在半导体衬底的两个半导体衬底上形成有应力产生衬垫部分，同时露出半导体纳米线的中间部分。在半导体纳米线的中间部分形成栅极电介质和栅电极，同时半导体纳米线由于应力产生衬垫部分而处于纵向应力之下。由于栅极电介质和栅电极的形成锁定在半导体纳米线的应变状态，半导体纳米线的中间部分在移除应力产生衬里之后处于内置的固有纵向应力。源极和漏极区域形成在半导体焊盘中以提供半导体纳米线晶体管。中间线（MOL）电介质层可以直接形成在源极和漏极焊盘上。

53. 发明授权

US07902541B2 Semiconductor nanowire with built-in stress 有权
标题翻译：半导体纳米线内置应力
公开(公告)号：US07902541B2
公开(公告)日：2011-03-08
申请号：US12417819
申请日：2009-04-03
申请人： Lidija Sekaric , Dureseti Chidambarrao , Xiao H. Liu
发明人： Lidija Sekaric , Dureseti Chidambarrao , Xiao H. Liu
IPC分类号： H01L29/06
CPC分类号： H01L29/775 , B82Y10/00 , H01L29/0673 , H01L29/42392 , H01L29/517 , H01L29/66439 , H01L29/7843 , H01L29/78696 , Y10S977/762 , Y10S977/938
摘要： A semiconductor nanowire having two semiconductor pads on both ends is suspended over a substrate. Stress-generating liner portions are formed over the two semiconductor pads, while a middle portion of the semiconductor nanowire is exposed. A gate dielectric and a gate electrode are formed over the middle portion of the semiconductor nanowire while the semiconductor nanowire is under longitudinal stress due to the stress-generating liner portions. The middle portion of the semiconductor nanowire is under a built-in inherent longitudinal stress after removal of the stress-generating liners because the formation of the gate dielectric and the gate electrode locks in the strained state of the semiconductor nanowire. Source and drain regions are formed in the semiconductor pads to provide a semiconductor nanowire transistor. A middle-of-line (MOL) dielectric layer may be formed directly on the source and drain pads.
摘要翻译：将两端具有两个半导体焊盘的半导体纳米线悬置在衬底上。在半导体衬底的两个半导体衬底上形成有应力产生衬垫部分，同时露出半导体纳米线的中间部分。在半导体纳米线的中间部分形成栅极电介质和栅电极，同时半导体纳米线由于应力产生衬垫部分而处于纵向应力之下。由于栅极电介质和栅电极的形成锁定在半导体纳米线的应变状态，半导体纳米线的中间部分在移除应力产生衬里之后处于内置的固有纵向应力。源极和漏极区域形成在半导体焊盘中以提供半导体纳米线晶体管。中间线（MOL）电介质层可以直接形成在源极和漏极焊盘上。

54. 发明申请

US20110049473A1 Film Wrapped NFET Nanowire 审中-公开
标题翻译：膜包裹的NFET纳米线
公开(公告)号：US20110049473A1
公开(公告)日：2011-03-03
申请号：US12549741
申请日：2009-08-28
申请人： Dureseti Chidambarrao , Lidija Sekaric
发明人： Dureseti Chidambarrao , Lidija Sekaric
IPC分类号： H01L29/12 , H01L21/31
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/42392 , H01L29/6675 , H01L29/78687 , H01L29/78696 , Y10S977/762 , Y10S977/814 , Y10S977/825 , Y10S977/932 , Y10S977/936 , Y10S977/937 , Y10S977/938
摘要： A semiconductor structure includes an n-channel field effect transistor (NFET) nanowire, the NFET nanowire comprising a film wrapping around a core of the NFET nanowire, the film wrapping configured to provide tensile stress in the NFET nanowire. A method of making a semiconductor structure includes growing a film wrapping around a core of an n-channel field effect transistor (NFET) nanowire of the semiconductor structure, the film wrapping being configured to provide tensile stress in the NFET nanowire.
摘要翻译：半导体结构包括n沟道场效应晶体管（NFET）纳米线，所述NFET纳米线包括围绕NFET纳米线的芯缠绕的膜，所述膜包覆被配置为在NFET纳米线中提供拉伸应力。制造半导体结构的方法包括生长围绕半导体结构的n沟道场效应晶体管（NFET）纳米线的芯缠绕的膜，膜缠绕被配置为在NFET纳米线中提供拉伸应力。

55. 发明申请

US20100128260A1 SEMICONDUCTOR NANOWIRE ELECTROMAGNETIC RADIATION SENSOR 有权
公开(公告)号：US20100128260A1
公开(公告)日：2010-05-27
申请号：US12324151
申请日：2008-11-26
申请人： Ali Afzali-Ardakani , Lidija Sekaric
发明人： Ali Afzali-Ardakani , Lidija Sekaric
IPC分类号： H01L31/0352 , H01L31/18 , G01J1/02
CPC分类号： H01L51/428 , B82Y10/00 , H01L29/0673 , H01L51/0049 , H01L51/0077 , H01L51/0081 , H01L51/0085 , H01L51/0086 , H01L51/4213 , Y02E10/549 , Y10S977/762 , Y10T428/292
摘要： A semiconductor nanowire is coated with a chemical coating layer that selectively attaches to the semiconductor material and which forms a dye in a chemical reaction. The dye layer comprises a material that absorbs electromagnetic radiation. A portion of the absorbed energy induces electronic excitation in the chemical coating layer from which additional free charge carriers are temporarily donated into the semiconductor nanowire. Thus, the conductivity of the semiconductor nanowire increases upon illumination on the dye layer. The semiconductor nanowire, and the resulting dye layer collective operate as a detector for electromagnetic radiation.
摘要翻译：半导体纳米线涂有选择性地附着于半导体材料并在化学反应中形成染料的化学涂层。染料层包括吸收电磁辐射的材料。吸收的能量的一部分在化学涂层中引起电子激发，其中额外的自由电荷载体暂时捐赠到半导体纳米线中。因此，在染料层上照射时，半导体纳米线的导电性增加。半导体纳米线和所得到的染料层集合起来用作电磁辐射的检测器。

56. 发明申请

US20060275694A1 High resolution silicon-containing resist 失效
标题翻译：高分辨率含硅抗蚀剂
公开(公告)号：US20060275694A1
公开(公告)日：2006-12-07
申请号：US11146871
申请日：2005-06-07
申请人： James Bucchignano , Wu-Song Huang , David Klaus , Lidija Sekaric , Raman Viswanathan
发明人： James Bucchignano , Wu-Song Huang , David Klaus , Lidija Sekaric , Raman Viswanathan
IPC分类号： G03C1/00
CPC分类号： G03F7/0757 , G03F7/0045 , G03F7/0046
摘要： Non-chemically amplified radiation sensitive resist compositions containing silicon are especially useful for lithographic applications, especially E-beam lithography. More particularly, radiation-sensitive resist compositions comprising a polymer having at least one silicon-containing moiety and at least one radiation-sensitive moiety cleavable upon radiation exposure to form aqueous base soluble moiety can be used to pattern sub-50 nm features with little or no blur.
摘要翻译：含有硅的非化学增强辐射敏感抗蚀剂组合物特别适用于光刻应用，尤其是电子束光刻。更具体地说，可以使用包含具有至少一个含硅部分的聚合物和在辐射暴露时可切割形成水溶性碱可溶部分的至少一个辐射敏感部分的辐射敏感性抗蚀剂组合物来形成低于50nm的特征，没有模糊。

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