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51. 发明申请

US20140256172A1 POWER SUPPLYING PLUG LOCK DEVICE 审中-公开
标题翻译：电源插头锁定装置
公开(公告)号：US20140256172A1
公开(公告)日：2014-09-11
申请号：US14241981
申请日：2012-08-01
申请人： Masashi Kakizaki , Masaru Sasaki
发明人： Masashi Kakizaki , Masaru Sasaki
IPC分类号： H01R13/627
CPC分类号： H01R13/627 , B60L53/16 , B60L53/65 , B60L2270/32 , B60L2270/34 , H01R13/6397 , H01R2201/26 , Y02T10/7005 , Y02T10/7072 , Y02T90/121 , Y02T90/128 , Y02T90/14 , Y02T90/163 , Y02T90/169 , Y04S30/14
摘要： A power supplying plug lock device attachable to an operation arm of a power supplying plug, the operation arm operable to fix the power supplying plug to an inlet, is configured to restrict movement of the operation arm to prevent unauthorized removal of the power supplying plug. The power supplying plug lock device is externally attachable to the operation arm when an authentication member accomplishes authentication. A restriction member moves from an open position to a close position to engage with the operation arm when the power supplying plug lock device is attached to the operation arm. A position holding mechanism shifts to a lock state in cooperation with the movement of the restriction member to the close position, thereby holding the restriction member at the close position. The position holding mechanism maintains the lock state until the authentication member again accomplishes authentication.
摘要翻译：一种可供给电源插头的操作臂的供电插头锁定装置，所述操作臂可操作以将所述电源插头固定到入口，所述电源插头锁定装置被配置为限制所述操作臂的移动，以防止未经授权地移除所述电源插头。当认证成员完成认证时，供电插头锁定装置可外部附接到操作臂。当电源插头锁定装置安装在操作臂上时，限制部件从打开位置移动到关闭位置，以与操作臂接合。一个位置保持机构与限制件的移动一起移动到一个锁定状态，并将该限制件保持在关闭位置。位置保持机构保持锁定状态，直到认证成员再次完成认证。

52. 发明授权

US08608901B2 Process chamber cleaning method in substrate processing apparatus, substrate processing apparatus, and substrate processing method 有权
标题翻译：基板处理装置，基板处理装置和基板处理方法中的处理室清洗方法
公开(公告)号：US08608901B2
公开(公告)日：2013-12-17
申请号：US12711904
申请日：2010-02-24
申请人： Shuuichi Ishizuka , Masaru Sasaki , Tetsuro Takahashi , Koji Maekawa
发明人： Shuuichi Ishizuka , Masaru Sasaki , Tetsuro Takahashi , Koji Maekawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , C25F1/00
CPC分类号： H01J37/32862 , B08B7/0035
摘要： In a substrate processing apparatus configured to perform a predetermined process on a target substrate accommodated in a process chamber, the process chamber is cleaned by alternately performing an operation of generating plasma of a gas containing oxygen within the process chamber, and an operation of generating plasma of a gas containing nitrogen within the process chamber.
摘要翻译：在被配置为对容纳在处理室中的目标基板执行预定处理的基板处理装置中，通过交替地执行在处理室内产生含氧气体的等离子体的操作来清洁处理室，以及产生等离子体的操作在处理室内含有氮气的气体。

53. 发明申请

US20130029494A1 PLASMA ETCHING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND PLASMA ETCHING DEVICE 有权
标题翻译：等离子体蚀刻方法，生产半导体器件的方法和等离子体蚀刻器件
公开(公告)号：US20130029494A1
公开(公告)日：2013-01-31
申请号：US13582523
申请日：2011-03-03
申请人： Masaru Sasaki , Kazuki Moyama , Masaki Inoue , Yoko Noto
发明人： Masaru Sasaki , Kazuki Moyama , Masaki Inoue , Yoko Noto
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32192 , H01J37/32238 , H01L29/6653 , H01L29/6659 , H01L29/66795 , H01L29/7833
摘要： Provided is a plasma etching method increasing the selectivity of a silicon nitride film in relation to the silicon oxide film or silicon functioning as a base. In a plasma etching method setting a pressure in a processing container as a predetermined level by exhausting a processing gas while supplying the processing gas into the processing container, generating plasma by supplying external energy to the processing container, and setting a bias applied to a holding stage holding a substrate in the processing container as predetermined value to selectively etch the silicon nitride film with respect to a silicon and/or silicon oxide film, the processing gas includes a plasma excitation gas, a CHxFy gas, and at least one oxidizing gas selected from the group consisting of O2, CO2, CO, and a flow rate of the oxidizing gas with respect to the CHxFy gas is set to be 4/9 or greater.
摘要翻译：提供了提高氮化硅膜相对于用作基底的氧化硅膜或硅的选择性的等离子体蚀刻方法。在等离子体蚀刻方法中，通过在将处理气体供应到处理容器中的同时排出处理气体而将处理容器中的压力设定为预定水平，通过向处理容器供给外部能量来产生等离子体，并且设定施加到保持将处理容器中的基板保持为预定值，以相对于硅和/或氧化硅膜选择性地蚀刻氮化硅膜，处理气体包括等离子体激发气体，CH x F y气体和至少一种选择的氧化气体来自由O 2，CO 2，CO组成的组和氧化气体相对于CH x F y气体的流量设定为4/9以上。

54. 发明授权

US08294419B2 Electrical powered vehicle 有权
标题翻译：电动车辆
公开(公告)号：US08294419B2
公开(公告)日：2012-10-23
申请号：US13129742
申请日：2008-11-21
申请人： Masaru Sasaki
发明人： Masaru Sasaki
IPC分类号： H02J7/00 , B60K1/00 , B60L1/00 , B60L5/38
CPC分类号： B60W20/13 , B60K1/02 , B60K6/365 , B60K6/445 , B60L11/182 , B60W10/08 , B60W10/24 , B60W10/26 , B60W20/00 , B60W2510/244 , Y02T10/6239 , Y02T10/6269 , Y02T10/7005 , Y02T10/7072 , Y02T90/122 , Y02T90/14
摘要： A secondary self-resonant coil is installed at substantially the central region of the bottom face of the vehicle body, receiving electric power from a power feeding apparatus in a non-contact manner by resonating with a primary self-resonant coil of a power feeding apparatus provided external to the vehicle, via an electromagnetic field. In a power reception mode from the power feeding apparatus, high voltage is generated at the wire end of the secondary self-resonant coil, causing generation of a high electric field around the wire end. In order to keep the wire end distant from an ECU that is an electric apparatus located closest to the secondary self-resonant coil, the secondary self-resonant coil is arranged such that the wire end is located at a side (−Y direction) opposite to the side (+Y direction) where the ECU is deviated relative to the bilateral symmetric axis of the vehicle body.
摘要翻译：次级自谐振线圈安装在车体底面的大致中央区域处，通过与供电装置的初级自谐振线圈共振而以非接触方式从供电装置接收电力通过电磁场设置在车辆外部。在来自供电装置的电力接收模式中，在二次自谐振线圈的导线端产生高电压，从而在电线端部产生高电场。为了使电线端远离最靠近次级自谐振线圈的电气设备的ECU，次级自谐振线圈被布置成使得电线端部位于与...相对的一侧（-Y方向）到ECU相对于车身的双侧对称轴偏离的一侧（+ Y方向）。

55. 发明申请

US20120098330A1 COIL UNIT, NONCONTACT POWER RECEIVING APPARATUS, NONCONTACT POWER TRANSMITTING APPARATUS, NONCONTACT POWER FEEDING SYSTEM, AND VEHICLE 审中-公开
标题翻译：线圈单元，非接线电力接收装置，非连接发射装置，非连接功率馈送系统和车辆
公开(公告)号：US20120098330A1
公开(公告)日：2012-04-26
申请号：US13143735
申请日：2009-07-02
申请人： Shinji Ichikawa , Masaru Sasaki , Toru Nakamura , Taira Kikuchi , Yukihiro Yamamoto
发明人： Shinji Ichikawa , Masaru Sasaki , Toru Nakamura , Taira Kikuchi , Yukihiro Yamamoto
IPC分类号： H01F38/14 , H02J17/00
CPC分类号： H01F38/14 , B60L50/16 , B60L50/61 , B60L53/12 , B60L53/60 , B60L2220/14 , Y02T10/6217 , Y02T10/7005 , Y02T10/7022 , Y02T10/7072 , Y02T10/7077 , Y02T90/121 , Y02T90/122 , Y02T90/128 , Y02T90/14 , Y02T90/163
摘要： In a noncontact electric power feeding system by means of a resonance method, an electric power receiving apparatus includes a plurality of secondary self-resonant coils. The noncontact electric power feeding system makes a switch between these secondary self-resonant coils to detect a distance between the electric power receiving apparatus and an electric power transmitting unit, and selects, according to distance L as detected, a secondary self-resonant coil with high transfer efficiency for receiving electric power to accordingly feed electric power. In this way, distance L between the power receiving apparatus and the power transmitting unit can be precisely detected including distances from longer ones to shorter ones, and the transmission efficiency in transmitting electric power in a noncontact manner by means of the resonance method can be improved.
摘要翻译：在通过共振方法的非接触供电系统中，电力接收装置包括多个次级自谐振线圈。非接触供电系统在这些二次自谐振线圈之间进行开关以检测电力接收装置与电力发送单元之间的距离，并且根据检测到的距离L选择二次自谐振线圈，其具有接收电力的高转印效率相应地进行供电。以这种方式，可以精确地检测受电装置和动力传递单元之间的距离L，包括从较长的距离到较短距离的距离，并且可以通过谐振方法以非接触的方式发送电力的传输效率。

56. 发明申请

US20110254376A1 NONCONTACT ELECTRIC POWER RECEIVING DEVICE, NONCONTACT ELECTRIC POWER TRANSMITTING DEVICE, NONCONTACT ELECTRIC POWER FEEDING SYSTEM, AND VEHICLE 有权
标题翻译：非接触式电力接收装置，非电力电力传输装置，非电力电力馈电系统和车辆
公开(公告)号：US20110254376A1
公开(公告)日：2011-10-20
申请号：US13060352
申请日：2009-03-18
申请人： Masaru Sasaki , Shinji Ichikawa , Toru Nakamura , Yukihiro Yamamoto , Taira Kikuchi
发明人： Masaru Sasaki , Shinji Ichikawa , Toru Nakamura , Yukihiro Yamamoto , Taira Kikuchi
IPC分类号： H01F38/14
CPC分类号： B60L5/005 , B60L11/182 , B60L2270/147 , B60M7/003 , H02J7/025 , H02J50/12 , H02J50/70 , Y02T10/7005 , Y02T10/7072 , Y02T90/122 , Y02T90/14
摘要： In a noncontact electric power feeding system using a resonance method, electrical equipment installed within a coil case is configured to include an electric power receiving antenna and a rectifier in an integrated manner. The electrical equipment is driven by receiving electric power from an electromagnetic field generated by electromagnetic resonance, without power supply from the outside of the coil case.
摘要翻译：在使用共振方法的非接触供电系统中，安装在线圈壳体内的电气设备被构造为以集成的方式包括电力接收天线和整流器。通过从电磁谐振产生的电磁场接收电力来驱动电气设备，而不从线圈壳体的外部供电。

57. 发明申请

US20100154707A1 PROCESS CHAMBER CLEANING METHOD IN SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING METHOD 有权
标题翻译：基板处理装置中的处理室清洗方法，基板处理装置和基板处理方法
公开(公告)号：US20100154707A1
公开(公告)日：2010-06-24
申请号：US12711904
申请日：2010-02-24
申请人： Shuuichi Ishizuka , Masaru Sasaki , Tetsuro Takahashi , Koji Maekawa
发明人： Shuuichi Ishizuka , Masaru Sasaki , Tetsuro Takahashi , Koji Maekawa
IPC分类号： C23C16/52
CPC分类号： H01J37/32862 , B08B7/0035
摘要： In a substrate processing apparatus configured to perform a predetermined process on a target substrate accommodated in a process chamber, the process chamber is cleaned by alternately performing an operation of generating plasma of a gas containing oxygen within the process chamber, and an operation of generating plasma of a gas containing nitrogen within the process chamber.
摘要翻译：在被配置为对容纳在处理室中的目标基板执行预定处理的基板处理装置中，通过交替地执行在处理室内产生含氧气体的等离子体的操作来清洁处理室，以及产生等离子体的操作在处理室内含有氮气的气体。

58. 发明授权

US07695763B2 Method for cleaning process chamber of substrate processing apparatus, substrate processing apparatus, and method for processing substrate 有权
标题翻译：基板处理装置的清洗处理室的方法，基板处理装置以及基板的处理方法
公开(公告)号：US07695763B2
公开(公告)日：2010-04-13
申请号：US10587394
申请日：2005-01-27
申请人： Shuuichi Ishizuka , Masaru Sasaki , Tetsuro Takahashi , Koji Maekawa
发明人： Shuuichi Ishizuka , Masaru Sasaki , Tetsuro Takahashi , Koji Maekawa
IPC分类号： C23C16/00 , B08B6/00 , B08B9/00
CPC分类号： H01J37/32862 , B08B7/0035
摘要： In a substrate processing apparatus configured to perform a predetermined process on a target substrate accommodated in a process chamber, the process chamber is cleaned by alternately performing an operation of generating plasma of a gas containing oxygen within the process chamber, and an operation of generating plasma of a gas containing nitrogen within the process chamber.
摘要翻译：在被配置为对容纳在处理室中的目标基板执行预定处理的基板处理装置中，通过交替地执行在处理室内产生含氧气体的等离子体的操作来清洁处理室，以及产生等离子体的操作在处理室内含有氮气的气体。

59. 发明授权

US07645481B2 Fabrication of low dielectric constant insulating film 有权
标题翻译：低介电常数绝缘膜的制作
公开(公告)号：US07645481B2
公开(公告)日：2010-01-12
申请号：US10572477
申请日：2004-09-17
申请人： Masaru Sasaki , Satohiko Hoshino , Shinji Ide , Yusaku Kashiwagi
发明人： Masaru Sasaki , Satohiko Hoshino , Shinji Ide , Yusaku Kashiwagi
IPC分类号： C23C16/00 , C04B41/00 , C30B28/12 , C30B17/00
CPC分类号： H01L21/31695 , C23C16/401 , H01J37/32192 , H01J37/32935 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0234 , H01L21/3003 , H01L21/31058 , H01L21/3121 , H01L21/31633
摘要： The present invention relates to a method of lowering dielectric constant of an insulating film including Si, O and CH formed by a chemical vapor deposition process. A process gas containing hydrogen atoms is supplied into a reaction vessel. A microwave is introduced into the reaction vessel to supply a uniform electromagnetic wave, thereby a plasma containing a hydrogen radical is generated in the reaction vessel. The structure of the insulating film is modified by the hydrogen radical contained in the plasma irradiated to the insulating film, lowering the dielectric constant of the film. The microwave is supplied into the reaction vessel through a radial-slot antenna.
摘要翻译：本发明涉及通过化学气相沉积工艺形成的包括Si，O和CH的绝缘膜的介电常数降低的方法。将含有氢原子的工艺气体供给到反应容器中。将微波引入反应容器中以提供均匀的电磁波，从而在反应容器中产生含有氢自由基的等离子体。绝缘膜的结构被照射到绝缘膜上的等离子体中所含的氢原子改性，降低了膜的介电常数。通过径向天线将微波提供给反应容器。

60. 发明授权

US07622402B2 Method for forming underlying insulation film 有权
标题翻译：形成底层绝缘膜的方法
公开(公告)号：US07622402B2
公开(公告)日：2009-11-24
申请号：US10509371
申请日：2003-03-31
申请人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
发明人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
IPC分类号： H01L21/31
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/31604 , H01L21/31645 , H01L21/31662 , H01L28/56 , H01L29/517 , H01L29/518
摘要： The surface of an insulating film disposed on an electronic device substrate is irradiated with plasma based on a process gas comprising at least an oxygen atom-containing gas, to thereby form an underlying film at the interface between the insulating film and the electronic device substrate. A good underlying film is provided at the interface between the insulating film and the electronic device substrate, so that the thus formed underlying film can improve the property of the insulating film.
摘要翻译：基于包含至少含氧原子气体的工艺气体，等离子体照射设置在电子器件基板上的绝缘膜的表面，从而在绝缘膜和电子器件基板之间的界面处形成下面的膜。在绝缘膜和电子器件基板之间的界面处提供了良好的底层膜，从而使得这样形成的底膜能够提高绝缘膜的性能。

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