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51. 发明申请

US20090213951A1 Method of suppressing carrier leak in OFDM transmission and radio transmitter using same method 审中-公开
标题翻译：使用相同的方法抑制OFDM传输和无线电发射机中的载波泄漏的方法
公开(公告)号：US20090213951A1
公开(公告)日：2009-08-27
申请号：US12320156
申请日：2009-01-21
申请人： Minoru Okada , Kenichi Koeda , Toshiyuki Morishita
发明人： Minoru Okada , Kenichi Koeda , Toshiyuki Morishita
IPC分类号： H04L27/28
CPC分类号： H04L27/2626 , H04L2027/0016 , H04L2027/0018
摘要： In an OFDM type radio transmitter, an orthogonal modulator performs an orthogonal modulation of an I-component and a Q-component, an orthogonal component output circuit produces the I-component and the Q-component in accordance with set values, and a correction circuit sets the I-component and the Q-component to zero. The correction circuit further corrects offset values of the I-component and the Q-component by way of the orthogonal component output circuit to minimize an output power of the orthogonal modulator. The number of times of changing the set values of the orthogonal component output circuit is limited to predetermined values in correcting the offset values.
摘要翻译：在OFDM型无线发射机中，正交调制器执行I分量和Q分量的正交调制，正交分量输出电路根据设定值产生I分量和Q分量，校正电路将I分量和Q分量设置为零。校正电路还通过正交分量输出电路来校正I分量和Q分量的偏移值，以使正交调制器的输出功率最小化。在校正偏移值时，将正交分量输出电路的设定值变更的次数限制为规定值。

52. 发明申请

US20080307790A1 Steam Engine 有权
标题翻译：蒸汽机
公开(公告)号：US20080307790A1
公开(公告)日：2008-12-18
申请号：US12228414
申请日：2008-08-11
申请人： Shinichi Yatsuzuka , Shuzo Oda , Yasumasa Hagiwara , Toshiyuki Morishita , Katsuya Komaki
发明人： Shinichi Yatsuzuka , Shuzo Oda , Yasumasa Hagiwara , Toshiyuki Morishita , Katsuya Komaki
IPC分类号： F01K23/06
CPC分类号： F01K27/005
摘要： A steam engine has a pipe shaped fluid container, a heating and cooling devices respectively provided at a heating and cooling portions of the fluid container, and an output device connected to the fluid container, so that the output device is operated by the fluid pressure change in the fluid container, to generate an electric power. In such a steam engine, an inner radius “r1” of the cooling portion is made to almost equal to a depth “δ1” of the thermal penetration, which is calculated by the following formula (1); δ 1 = 2  a 1 ω ( 1 ) wherein, “a1” is a heat diffusivity of the working fluid at its low pressure, and “ω” is an angular frequency of the movement of the working fluid.
摘要翻译：蒸汽发动机具有管状流体容器，分别设置在流体容器的加热和冷却部分处的加热和冷却装置以及连接到流体容器的输出装置，使得输出装置由流体压力变化在流体容器中产生电力。在这种蒸汽机中，冷却部分的内半径“r1”几乎等于热穿透深度“delta1”，其通过下式（1）计算： $\begin{matrix} delta> 1=\sqrt{2<_{1>“a1”是工作流体在其低压下的热扩散率，“ω”是工作流体的运动的角频率。}} \end{matrix}$

53. 发明申请

US20070251915A1 Optical device and method for manufacturing the same 有权
标题翻译：光学装置及其制造方法
公开(公告)号：US20070251915A1
公开(公告)日：2007-11-01
申请号：US11783434
申请日：2007-04-10
申请人： Junji Oohara , Hisaya Katoh , Toshiyuki Morishita , Yukihiro Takeuchi
发明人： Junji Oohara , Hisaya Katoh , Toshiyuki Morishita , Yukihiro Takeuchi
IPC分类号： B29D11/00
CPC分类号： G02B3/06 , G02B6/124 , G03F7/0005
摘要： A method of manufacturing an optical device includes: a first step of forming an optical-device forming body that includes a plurality of columnar structures arranged in an arrangement direction on a substrate surface via a trench and an outline structure connected to and containing therein the plurality of columnar structures; a second step of oxidizing the optical-device forming body from a state where the optical-device forming body starts to be oxidized to a state where the columnar structure is oxidized; and a third step in which an unoxidized residual part of the outline structure in the second step is oxidized after the second step so as to form an oxidized body. Furthermore, the third step includes restraining the outline structure from being deformed with respect to at least the arrangement direction of the columnar structures in the third step.
摘要翻译：一种制造光学器件的方法包括：第一步骤，形成光学器件形成体，该光学器件形成体包括通过沟槽在衬底表面上沿排列方向布置的多个柱状结构，以及轮廓结构，其连接到并包含多个的柱状结构; 从光学装置形成体开始氧化到柱状结构被氧化的状态的氧化光学元件形成体的第二工序; 以及第三步骤，其中第二步骤中的轮廓结构的未氧化残余部分在第二步骤之后被氧化以形成氧化体。此外，第三步骤包括在第三步骤中限制轮廓结构相对于至少柱状结构的排列方向变形。

54. 发明申请

US20070214784A1 External combustion engine 有权
标题翻译：外燃机
公开(公告)号：US20070214784A1
公开(公告)日：2007-09-20
申请号：US11717794
申请日：2007-03-13
申请人： Shuzo Oda , Shinichi Yatsuzuka , Katsuya Komaki , Shunji Okemoto , Toshiyuki Morishita
发明人： Shuzo Oda , Shinichi Yatsuzuka , Katsuya Komaki , Shunji Okemoto , Toshiyuki Morishita
IPC分类号： F02G1/04 , F01B29/10
CPC分类号： F01K11/00
摘要： An external combustion engine is disclosed, comprising a container (11) for sealing a working liquid (12) in a way adapted to allow the liquid to flow therein, a heater (13) for heating and vaporizing the working liquid (12) in the container (11), and a cooler (14) for cooling and liquefying the vapor of the working liquid (12) heated and vaporized by the heater (13). The displacement of the working liquid (12) caused by the volume change of the vapor of the working liquid (12) is output by being converted into mechanical energy. In the heated portion (11d) of the container (11) for vaporizing the working liquid (12), the direction of displacement of the working liquid (12) at the parts (17, 19) far from the cooler (14) is changed with respect to the direction of displacement at the part (16) near to the cooler (14).
摘要翻译：公开了一种外燃机，包括用于以适于允许液体在其中流动的方式密封工作液体（12）的容器（11），用于加热和蒸发工作液体（12）的加热器（13）容器（11）和用于冷却和液化由加热器（13）加热和蒸发的工作液体（12）的蒸气的冷却器（14）。由工作液体（12）的蒸汽的体积变化引起的工作液体（12）的位移通过转换为机械能而被输出。在用于蒸发工作液体（12）的容器（11）的加热部分（11d）中，远离冷却器（14）的部分（17,19）处的工作液体（12）的位移方向是相对于靠近冷却器（14）的部分（16）处的位移方向改变。

55. 发明授权

US07185491B2 Steam engine 有权
标题翻译：蒸汽机
公开(公告)号：US07185491B2
公开(公告)日：2007-03-06
申请号：US11146174
申请日：2005-06-06
申请人： Shuzo Oda , Shinichi Yatsuzuka , Yasumasa Hagiwara , Toshiyuki Morishita
发明人： Shuzo Oda , Shinichi Yatsuzuka , Yasumasa Hagiwara , Toshiyuki Morishita
IPC分类号： F01B1/00
CPC分类号： F01K7/36 , F01K21/02 , F03G7/00 , F03G7/002
摘要： A steam engine has a looped fluid container, in which working fluid is filled. A heating device, a cooling device and an output device are arranged at the fluid container. A lower side valve is provided at a fluid passage of the fluid container between the heating device and the output device. An upper side valve is provided at another fluid passage of the fluid container between the cooling device and the output device. The upper and lower valves are respectively controlled to open and close the respective fluid passages at proper timings, to increase heat efficiency.
摘要翻译：蒸汽机具有循环的流体容器，其中填充有工作流体。加热装置，冷却装置和输出装置布置在流体容器中。下侧阀设置在加热装置和输出装置之间的流体容器的流体通道处。上侧阀设置在冷却装置与输出装置之间的流体容器的另一流体通道处。分别控制上下阀门以适当的定时打开和关闭相应的流体通道，以提高热效率。

56. 发明授权

US06938473B2 Apparatus for measuring flow amount 有权
标题翻译：用于测量流量的装置
公开(公告)号：US06938473B2
公开(公告)日：2005-09-06
申请号：US10298230
申请日：2002-11-18
申请人： Takao Iwaki , Toshiyuki Morishita , Yasushi Kohno , Hiroyuki Wado , Yasushi Goka , Makoto Tsunekawa , Toshirou Gotou , Kiyoyuki Sugiura
发明人： Takao Iwaki , Toshiyuki Morishita , Yasushi Kohno , Hiroyuki Wado , Yasushi Goka , Makoto Tsunekawa , Toshirou Gotou , Kiyoyuki Sugiura
IPC分类号： G01F1/684 , G01F1/68
CPC分类号： G01F1/6842
摘要： An airflow meter has a membrane type sensor element. The sensor element is supported on a support member so that a sensing surface of the sensor element is in parallel to the airflow direction. The airflow meter has at least one means for protecting the sensor element from dust such as foreign particles. The protecting means is provided with an obstruction member that is disposed upstream or downstream of the sensor element with respect to the airflow direction. The sensor element is hidden behind the obstruction member. The obstruction member has gradually spreading surfaces and gradually converging surfaces along the airflow direction. Alternatively, the protecting means can be provided with a deflector, a cover member, a flow guide member, an inlet or a dust collector.
摘要翻译：气流计具有膜式传感器元件。传感器元件支撑在支撑构件上，使得传感器元件的感测表面平行于气流方向。气流计具有至少一种用于保护传感器元件免受诸如外来颗粒的灰尘的装置。保护装置设置有相对于气流方向设置在传感器元件的上游或下游的阻塞构件。传感器元件隐藏在阻塞构件后面。阻塞构件具有逐渐扩散的表面并沿着气流方向逐渐收敛表面。或者，保护装置可以设置有偏转器，盖构件，导流构件，入口或集尘器。

57. 发明授权

US06855981B2 Silicon carbide power device having protective diode 有权
标题翻译：具有保护二极管的碳化硅功率器件
公开(公告)号：US06855981B2
公开(公告)日：2005-02-15
申请号：US10230152
申请日：2002-08-29
申请人： Rajesh Kumar , Hiroki Nakamura , Tsuyoshi Yamamoto , Toshiyuki Morishita
发明人： Rajesh Kumar , Hiroki Nakamura , Tsuyoshi Yamamoto , Toshiyuki Morishita
IPC分类号： H01L21/04 , H01L29/24 , H01L29/66 , H01L29/808 , H01L29/861 , H01L29/866 , H01L29/872 , H01L29/76
CPC分类号： H01L29/66992 , H01L29/1608 , H01L29/66068 , H01L29/8083 , H01L29/861 , H01L29/866 , H01L29/872
摘要： A silicon carbide power device includes a junction field effect transistor and a protective diode, which is a Zener or PN junction diode. The PN junction of the protective diode has a breakdown voltage lower than the PN junction of the transistor. Another silicon carbide power device includes a protective diode, which is a Schottky diode. The Schottky diode has a breakdown voltage lower than the PN junction of the transistor by adjusting Schottky barrier height or the depletion layer formed in the semiconductor included in the Schottky diode. Another silicon carbide power device includes three protective diodes, which are Zener diodes. Two of the protective diodes are used to clamp the voltages applied to the gate and the drain of the transistor due to surge energy and used to release the surge energy. The last diode is a thermo-sensitive diode, with which the temperature of the JFET is measured.
摘要翻译：碳化硅功率器件包括结场效应晶体管和作为齐纳二极管或PN结二极管的保护二极管。保护二极管的PN结的击穿电压低于晶体管的PN结。另一种碳化硅功率器件包括一个保护二极管，它是肖特基二极管。通过调整肖特基势垒高度或肖特基二极管中包含的半导体中形成的耗尽层，肖特基二极管的击穿电压低于晶体管的PN结。另一种碳化硅功率器件包括三个保护二极管，它们是齐纳二极管。两个保护二极管用于钳位由于浪涌能量施加到晶体管的栅极和漏极的电压，并用于释放浪涌能量。最后一个二极管是热敏二极管，测量JFET的温度。

58. 发明授权

US06710435B2 Semiconductor device arrangement and method of fabricating the same 有权
标题翻译：半导体器件布置及其制造方法
公开(公告)号：US06710435B2
公开(公告)日：2004-03-23
申请号：US10201158
申请日：2002-07-24
申请人： Masatake Nagaya , Toshiyuki Morishita
发明人： Masatake Nagaya , Toshiyuki Morishita
IPC分类号： H01L2302
CPC分类号： H01L25/0652 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device arrangement includes a plurality of three-dimensional semiconductor units. Each of the three-dimensional semiconductor units includes a semiconductor chip in a shape of a rectangular parallelepiped having six surfaces, and semiconductor devices formed on at least one among the six surfaces. The three-dimensional semiconductor units are mechanically connected and supported, and are electrically connected in a suitable way.
摘要翻译：半导体器件布置包括多个三维半导体单元。每个三维半导体单元包括具有六个表面的长方体形状的半导体芯片，以及形成在六个表面中的至少一个表面上的半导体器件。机械地连接和支撑三维半导体单元，并以合适的方式电连接。

59. 发明授权

US06525375B1 Semiconductor device having trench filled up with gate electrode 有权
标题翻译：具有填充有栅电极的沟槽的半导体器件
公开(公告)号：US06525375B1
公开(公告)日：2003-02-25
申请号：US09688154
申请日：2000-10-16
申请人： Hitoshi Yamaguchi , Toshio Sakakibara , Jun Sakakibara , Takumi Shibata , Toshiyuki Morishita
发明人： Hitoshi Yamaguchi , Toshio Sakakibara , Jun Sakakibara , Takumi Shibata , Toshiyuki Morishita
IPC分类号： H01L2976
CPC分类号： H01L29/7813 , H01L29/04 , H01L29/045 , H01L29/0696 , H01L29/41741 , H01L29/41766 , H01L29/4236 , H01L29/4238 , H01L29/66348 , H01L29/66378 , H01L29/66659 , H01L29/66704 , H01L29/66734 , H01L29/66787 , H01L29/7393 , H01L29/7397 , H01L29/749 , H01L29/78 , H01L29/7803 , H01L29/7809 , H01L29/7816 , H01L29/7817 , H01L29/7824 , H01L29/7825 , H01L29/7828 , H01L29/7835
摘要： In a semiconductor device, a p-type base region is provided in an n−-type substrate to extend from a principal surface of the substrate in a perpendicular direction to the principal surface. An n+-type source region extends in the p-type base region from the principal surface in the perpendicular direction, and an n+-type drain region extends in the substrate separately from the p-type base region with a drift region interposed therebetween. A trench is formed to penetrate the p-type base region from the n+-type source region in a direction parallel to the principal surface. A gate electrode is formed in the trench through a gate insulating film. Accordingly, a channel region can be formed with a channel width in a depth direction of the trench when a voltage is applied to the gate electrode.
摘要翻译：在半导体器件中，p型基极区域设置在n型衬底中，以从垂直于主表面的方向从衬底的主表面延伸。 n +型源极区域在垂直方向上从主表面延伸到p型基极区域中，并且n +型漏极区域在p型基极区域中与P型基极区域分开延伸，并且其间插入漂移区域。形成沟槽，以在平行于主表面的方向上从n +型源极区域穿透p型基极区域。栅电极通过栅极绝缘膜形成在沟槽中。因此，当向栅电极施加电压时，可以在沟槽的深度方向上形成沟道区域。

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