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1. 发明授权

US06768291B2 Fluid flow sensor and method of fabricating the same 失效
标题翻译：流体流量传感器及其制造方法
公开(公告)号：US06768291B2
公开(公告)日：2004-07-27
申请号：US10107443
申请日：2002-03-28
申请人： Toshiki Isogai , Yasushi Kohno , Toshimasa Yamamoto , Hiroyuki Wado
发明人： Toshiki Isogai , Yasushi Kohno , Toshimasa Yamamoto , Hiroyuki Wado
IPC分类号： G01N2700
CPC分类号： G01F1/6845
摘要： In a sensor chip for a fluid flow sensor, a thin film portion is formed above a hollow cavity portion while leaving thin film layers formed on the surface of a substrate. A conductor is provided on the inner wall face of a through hole formed to penetrate the substrate to thereby electrically connect a detecting portion constituted by a conductor film in the thin film layers and a substrate conductor portion formed on the rear face side of the through hole. The surface of a circuit board is formed with a control circuit and a base conductor portion electrically connected to the control circuit. The sensor chip and the circuit board are layered and the substrate conductor portion and the base conductor portion are electrically connected.
摘要翻译：在用于流体流量传感器的传感器芯片中，在中空空腔部分的上方形成薄膜部分，同时留下形成在基板表面上的薄膜层。在形成为穿透基板的通孔的内壁面上设置有导体，由此将由薄膜层中的导体膜构成的检测部和形成在通孔的背面侧的基板导体部电连接。电路板的表面形成有电连接到控制电路的控制电路和基底导体部分。传感器芯片和电路板被层叠，并且基板导体部分和基底导体部分电连接。

2. 发明授权

US07807061B2 Optical gas concentration detector and method of producing structure used in the detector 有权
标题翻译：光学气体浓度检测器及其检测方法
公开(公告)号：US07807061B2
公开(公告)日：2010-10-05
申请号：US11822748
申请日：2007-07-10
申请人： Hiroyuki Wado , Kazuhiko Kanoh
发明人： Hiroyuki Wado , Kazuhiko Kanoh
IPC分类号： C23F1/00
CPC分类号： G01N21/031 , G01N21/3504
摘要： A method of producing a structure by three-dimensionally processing a flat member includes a preparing, a first forming and a second forming. In the preparing, a substrate is prepared. In the first forming, an etching mask is formed on the substrate. The etching mask has at least two openings, and areas of the two openings are different from each other. In the second forming, at least a part of a three-dimension surface shape of the structure is formed on a surface of the substrate by a dry-etching on the substrate in accordance with the area of the opening of the etching mask.
摘要翻译：通过三维处理平坦部件制造结构的方法包括准备，第一成形和第二成形。在制备中，制备底物。在第一次成形中，在基板上形成蚀刻掩模。蚀刻掩模具有至少两个开口，并且两个开口的区域彼此不同。在第二次成形中，通过根据蚀刻掩模的开口面积在基板上通过干法蚀刻在基板的表面上形成三维表面形状的至少一部分。

3. 发明申请

US20080190175A1 Optical gas concentration detector and method of producing structure used in the detector 有权
标题翻译：光学气体浓度检测器及其检测方法
公开(公告)号：US20080190175A1
公开(公告)日：2008-08-14
申请号：US11822748
申请日：2007-07-10
申请人： Hiroyuki Wado , Kazuhiko Kanoh
发明人： Hiroyuki Wado , Kazuhiko Kanoh
IPC分类号： G01N7/00
CPC分类号： G01N21/031 , G01N21/3504
摘要： A method of producing a structure by three-dimensionally processing a flat member includes a preparing, a first forming and a second forming. In the preparing, a substrate is prepared. In the first forming, an etching mask is formed on the substrate. The etching mask has at least two openings, and areas of the two openings are different from each other. In the second forming, at least a part of a three-dimension surface shape of the structure is formed on a surface of the substrate by a dry-etching on the substrate in accordance with the area of the opening of the etching mask.
摘要翻译：通过三维处理平坦部件制造结构的方法包括准备，第一成形和第二成形。在制备中，制备底物。在第一次成形中，在基板上形成蚀刻掩模。蚀刻掩模具有至少两个开口，并且两个开口的区域彼此不同。在第二次成形中，通过根据蚀刻掩模的开口面积在基板上通过干法蚀刻在基板的表面上形成三维表面形状的至少一部分。

4. 发明申请

US20070251324A1 Ultrasonic sensor and manufacture method of the same 有权
标题翻译：超声波传感器及其制造方法相同
公开(公告)号：US20070251324A1
公开(公告)日：2007-11-01
申请号：US11790298
申请日：2007-04-24
申请人： Hiroyuki Wado , Makiko Sugiura
发明人： Hiroyuki Wado , Makiko Sugiura
IPC分类号： G01H11/00
CPC分类号： B06B1/0688 , H01L41/0973
摘要： An ultrasonic sensor is provided with a substrate unit where a thin-walled portion is arranged and a piezoelectric oscillator which is formed at the substrate unit. The piezoelectric oscillator includes two electrodes and a piezoelectric film positioned between the two electrodes. The thin-walled portion and the piezoelectric oscillator construct a membrane structure which will resonate at a predetermined frequency.
摘要翻译：超声波传感器设置有布置有薄壁部分的基板单元和形成在基板单元处的压电振荡器。压电振荡器包括两个电极和位于两个电极之间的压电薄膜。薄壁部分和压电振荡器构成将以预定频率谐振的膜结构。

5. 发明授权

US06694811B2 Flow meter having airflow sensor 有权
标题翻译：流量计有气流传感器
公开(公告)号：US06694811B2
公开(公告)日：2004-02-24
申请号：US10379938
申请日：2003-03-06
申请人： Yasushi Kohno , Toshimasa Yamamoto , Hiroyuki Wado , Tetsuo Yoshioka
发明人： Yasushi Kohno , Toshimasa Yamamoto , Hiroyuki Wado , Tetsuo Yoshioka
IPC分类号： G01F168
CPC分类号： G01F1/6842
摘要： A flow meter is formed with a passage for introducing and carrying air to measure and has a sensing part disposed in the passage for measuring a flow rate of the air. A contraction part is formed on an inner surface of the passage so that the contraction part faces the sensing part. The contraction part narrows the flow of the air flowing near the sensing part. A flat surface of the contraction part is formed in parallel with the surface of the sensing part and at least upstream of the sensing part. Thus, collision of particles against the sensing part and adhesion of contaminants to the sensing pert are inhibited. Meanwhile, the flow rate of the air is measured stably and accurately.
摘要翻译：流量计形成有用于引入和携带空气进行测量的通道，并且具有设置在通道中的用于测量空气流量的感测部分。收缩部分形成在通道的内表面上，使得收缩部分面向感测部分。收缩部分使感应部分附近的空气流动变窄。收缩部分的平坦表面形成为与感测部分的表面平行并且至少在感测部分的上游。因此，抑制了颗粒与传感部分的碰撞以及污染物与传感污染物的粘附。同时，稳定且准确地测量空气的流量。

6. 发明授权

US08558375B2 Semiconductor package cooled by grounded cooler 有权
标题翻译：半导体封装由接地冷却器冷却
公开(公告)号：US08558375B2
公开(公告)日：2013-10-15
申请号：US13170475
申请日：2011-06-28
申请人： Kuniaki Mamitsu , Takahisa Kaneko , Masaya Tonomoto , Masayoshi Nishihata , Hiroyuki Wado , Chikage Noritake , Eiji Nomura , Toshiki Itoh
发明人： Kuniaki Mamitsu , Takahisa Kaneko , Masaya Tonomoto , Masayoshi Nishihata , Hiroyuki Wado , Chikage Noritake , Eiji Nomura , Toshiki Itoh
IPC分类号： H01L23/34
CPC分类号： H01L23/473 , H01L23/3672 , H01L23/3736 , H01L23/427 , H01L23/4334 , H01L23/46 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/48 , H01L24/73 , H01L2224/06181 , H01L2224/29111 , H01L2224/2929 , H01L2224/29299 , H01L2224/29339 , H01L2224/29347 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/48227 , H01L2224/73215 , H01L2224/73265 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/06 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1517 , H01L2924/1579 , H01L2924/181 , H01L2924/1815 , H01L2924/00012 , H01L2924/00 , H01L2224/29099 , H01L2224/29199 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes a package and a cooler. The semiconductor package includes a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member. The metal member has a metal portion thermally connected to the semiconductor element, an insulating layer on the metal portion, and a conducting layer on the insulating layer. The conducting layer is at least partially exposed outside the molding member and serves as a radiation surface for radiating heat of the semiconductor element. The cooler has a coolant passage through which a coolant circulates to cool the conducting layer. The conducting layer and the cooler are electrically connected together.
摘要翻译：半导体器件包括封装和冷却器。半导体封装包括半导体元件，金属构件和用于封装半导体元件和金属构件的模制构件。金属构件具有热连接到半导体元件的金属部分，金属部分上的绝缘层和绝缘层上的导电层。导电层至少部分地暴露在模制构件的外部，并且用作用于辐射半导体元件的热的辐射表面。冷却器具有冷却剂通道，冷却剂通过该通道冷却导电层。导电层和冷却器电连接在一起。

7. 发明申请

US20120001308A1 SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体模块及其制造方法
公开(公告)号：US20120001308A1
公开(公告)日：2012-01-05
申请号：US13173248
申请日：2011-06-30
申请人： Keita Fukutani , Kuniaki Mamitsu , Yasushi Ookura , Masayoshi Nishihata , Hiroyuki Wado , Syun Sugiura
发明人： Keita Fukutani , Kuniaki Mamitsu , Yasushi Ookura , Masayoshi Nishihata , Hiroyuki Wado , Syun Sugiura
IPC分类号： H01L23/495 , H01L21/60
CPC分类号： H01L24/32 , H01L23/49524 , H01L23/49541 , H01L23/49562 , H01L23/49568 , H01L23/49575 , H01L24/29 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/05553 , H01L2224/05554 , H01L2224/291 , H01L2224/32145 , H01L2224/32245 , H01L2224/33181 , H01L2224/371 , H01L2224/40245 , H01L2224/40247 , H01L2224/48247 , H01L2224/49175 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2224/45099 , H01L2924/00012 , H01L2924/00
摘要： In a semiconductor module, a first heat sink is disposed on a rear surface of a first semiconductor chip constituting an upper arm, and a second heat sink is disposed on a front surface of the first semiconductor chip through a first terminal. A third heat sink is disposed on a rear surface of a second semiconductor chip constituting a lower arm, and a fourth heat sink is disposed on a front surface of the second semiconductor chip through a second terminal. A connecting part for connecting between the upper arm and the lower arm is integral with the first terminal, and is connected to the third heat sink while being inclined relative to the first terminal.
摘要翻译：在半导体模块中，第一散热器设置在构成上臂的第一半导体芯片的后表面上，第二散热器通过第一端子设置在第一半导体芯片的前表面上。第三散热器设置在构成下臂的第二半导体芯片的后表面上，第四散热器通过第二端子设置在第二半导体芯片的前表面上。用于连接上臂和下臂的连接部分与第一端子成一体，并且相对于第一端子倾斜地连接到第三散热器。

8. 发明授权

US07730785B2 Ultrasonic sensor and manufacture method of the same 有权
标题翻译：超声波传感器及其制造方法相同
公开(公告)号：US07730785B2
公开(公告)日：2010-06-08
申请号：US11790298
申请日：2007-04-24
申请人： Hiroyuki Wado , Makiko Sugiura
发明人： Hiroyuki Wado , Makiko Sugiura
IPC分类号： G01N9/24 , H01L41/00
CPC分类号： B06B1/0688 , H01L41/0973
摘要： An ultrasonic sensor is provided with a substrate unit where a thin-walled portion is arranged and a piezoelectric oscillator which is formed at the substrate unit. The piezoelectric oscillator includes two electrodes and a piezoelectric film positioned between the two electrodes. The thin-walled portion and the piezoelectric oscillator construct a membrane structure which will resonate at a predetermined frequency.
摘要翻译：超声波传感器设置有布置有薄壁部分的基板单元和形成在基板单元处的压电振荡器。压电振荡器包括两个电极和位于两个电极之间的压电薄膜。薄壁部分和压电振荡器构成将以预定频率谐振的膜结构。

9. 发明授权

US06705160B2 Flow sensor 失效
标题翻译：流量传感器
公开(公告)号：US06705160B2
公开(公告)日：2004-03-16
申请号：US10197474
申请日：2002-07-18
申请人： Takao Iwaki , Toshimasa Yamamoto , Hiroyuki Wado
发明人： Takao Iwaki , Toshimasa Yamamoto , Hiroyuki Wado
IPC分类号： G01F168
CPC分类号： G01F1/692
摘要： A thin-film type flow sensor having a thin-film part in which a plurality of patterned resistor films are sandwiched between a pair of insulator films. The resistance ratios among the resistor films are minimized from one sensor to another made from the same wafer. The flow sensor has a lower insulator film, the resistor films, and an upper film laminated in succession on a substrate. The resistor films include a patterned fluid thermometer, a temperature detector, and a heater. The heater has a wiring configuration in which resistor elements are connected in a parallel manner. The wiring widths of the heater and the thermometer can thus be made identical, so that the resistance ratios become invariant over the wafer surface, irrespective of a disparity in etching variations.
摘要翻译：一种薄膜型流量传感器，其具有多个图案化的电阻膜夹在一对绝缘膜之间的薄膜部分。电阻膜之间的电阻比从一个传感器到另一个由相同晶片制成的电阻比最小化。流量传感器具有下层绝缘膜，电阻膜和在基片上连续层压的上层膜。电阻膜包括图案化流体温度计，温度检测器和加热器。加热器具有其中电阻元件以并联方式连接的布线配置。因此，加热器和温度计的布线宽度可以相同，使得电阻比在晶片表面上变得不变，而不管蚀刻变化的不同。

10. 发明授权

US06602428B2 Method of manufacturing sensor having membrane structure 有权
公开(公告)号：US06602428B2
公开(公告)日：2003-08-05
申请号：US09991986
申请日：2001-11-26
申请人： Hiroyuki Wado , Makiko Sugiura , Toshimasa Yamamoto , Yukihiro Takeuchi , Yasushi Kohno
发明人： Hiroyuki Wado , Makiko Sugiura , Toshimasa Yamamoto , Yukihiro Takeuchi , Yasushi Kohno
IPC分类号： H01L2100
CPC分类号： G01F1/6845 , B81B2201/0264 , B81B2203/0127 , B81C1/00182 , B81C2201/014 , B81C2201/0169 , G01L9/0042
摘要： A sensor for measuring a physical amount such as an amount of air includes a membrane structure composed of metal stripes sandwiched between first and second insulating layers. A metal layer made of platinum or the like is formed on the first insulating layer and then heat-treated to improve its properties. Then, the metal layer is etched into a form of the metal stripes. The second insulating layer made of a material such as silicon dioxide is formed on the etched metal stripes. Since the metal layer is heat-treated before it is etched into the form of metal stripes, the metal stripes are not deformed by the heat-treatment. The second insulating layer can be formed on the metal stripes without generating cracks in the second insulating layer.

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