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51. 发明授权

US07213702B2 Small bag-shaped drug container 失效
标题翻译：小袋状药物容器
公开(公告)号：US07213702B2
公开(公告)日：2007-05-08
申请号：US10285545
申请日：2002-11-01
申请人： Hiroaki Takimoto , Kenji Omori , Minoru Honda , Hitoshi Futagawa
发明人： Hiroaki Takimoto , Kenji Omori , Minoru Honda , Hitoshi Futagawa
IPC分类号： B65D25/08
CPC分类号： A61J1/2096 , A61J1/067 , A61J1/10 , A61J1/2024 , A61J1/2093
摘要： A bag-shaped drug container comprises a bag-shaped container body made of a flexible film, and a mouth provided at one end of the container body. The mouth is provided on a side of an open end thereof with a Luer locking means to liquid-tightly connect it with a tip of a syringe, and closed by a closing means such as cap or a male Luer portion.
摘要翻译：袋形药物容器包括由柔性膜制成的袋状容器体和设置在容器主体的一端的口。嘴在其开口端的一侧设置有鲁尔锁定装置，以将其与注射器的尖端液密地连接，并且通过诸如帽或公Luer部分的关闭装置关闭。

52. 发明授权

US07023002B2 Surface treating device and surface treating method 失效
标题翻译：表面处理装置及表面处理方法
公开(公告)号：US07023002B2
公开(公告)日：2006-04-04
申请号：US10895039
申请日：2004-07-21
申请人： Kazuya Nagaseki , Tadashi Onishi , Koichi Murakami , Daisuke Hayashi , Akiko Kamigori , Minoru Honda
发明人： Kazuya Nagaseki , Tadashi Onishi , Koichi Murakami , Daisuke Hayashi , Akiko Kamigori , Minoru Honda
IPC分类号： G21G5/00 , H01J37/00
CPC分类号： H01L21/67161 , G03F7/40 , H01J2237/31 , H01L21/67115 , H01L21/67248 , H01L21/68742 , H01L21/68785
摘要： Installed in a vacuum chamber is a mounting table for supporting semiconductor wafer, which is a substrate to be treated, with an electron beam irradiation mechanism mounted on the ceiling of the vacuum chamber for generating electron beams. The mounting table is adapted to be vertically moved by a lifting/lowering device, allowing the distance between the electron beam irradiating mechanism and the semiconductor wafer to be set at a desired value. This makes it possible to perform a uniform satisfactory treatment over the entire surface of the substrate to be treated.
摘要翻译：安装在真空室中的是用于支撑作为待处理基板的半导体晶片的安装台，其中电子束照射机构安装在用于产生电子束的真空室的天花板上。安装台适于通过提升/降低装置垂直移动，允许将电子束照射机构和半导体晶片之间的距离设定在期望值。这使得可以对待处理的基底的整个表面进行均匀的令人满意的处理。

53. 发明授权

US07005660B2 Surface processing apparatus 失效
标题翻译：表面处理装置
公开(公告)号：US07005660B2
公开(公告)日：2006-02-28
申请号：US10836265
申请日：2004-05-03
申请人： Minoru Honda , Ryo Nonaka , Kazuyuki Mitsuoka
发明人： Minoru Honda , Ryo Nonaka , Kazuyuki Mitsuoka
IPC分类号： H01J37/30
CPC分类号： H01J37/317 , H01J2237/3156
摘要： A surface processing apparatus which enables the electron beam energy to be reduced with a simplified construction. A wafer W as an object to be processed is placed in a processing chamber. The wafer is mounted on a mounting stage inside the processing chamber. An electron beam irradiating device is provided on the processing chamber such as to face the mounting stage and irradiates at least one electron beam toward the wafer. A self-generated electric field generator is provided between the electron beam irradiating device and the mounting stage and generates at least one self-generated electric field.
摘要翻译：能够以简化的结构使电子束能量减小的表面处理装置。将作为待处理物体的晶片W放置在处理室中。晶片安装在处理室内的安装台上。电子束照射装置设置在处理室上，例如面向安装台，并向晶片照射至少一个电子束。在电子束照射装置和安装台之间设置自发电场发生器，并产生至少一个自发电场。

54. 发明申请

US20050235967A1 Evaporative fuel adsorption device 失效
标题翻译：蒸发燃料吸附装置
公开(公告)号：US20050235967A1
公开(公告)日：2005-10-27
申请号：US11111826
申请日：2005-04-22
申请人： Takaaki Itou , Koichi Hoshi , Kouichi Oda , Minoru Honda , Hideki Suzuki , Toshiki Annoura , Masahiro Mochizuki , Futaba Kanehira
发明人： Takaaki Itou , Koichi Hoshi , Kouichi Oda , Minoru Honda , Hideki Suzuki , Toshiki Annoura , Masahiro Mochizuki , Futaba Kanehira
IPC分类号： F02M33/00 , F02M33/02 , F02M35/10
CPC分类号： F02M35/10281 , F02M33/02 , F02M35/02 , F02M35/10052 , F02M35/112
摘要： An evaporative fuel adsorbent 32, which adsorbs evaporative fuel, is positioned substantially parallel to a sidewall surface 30 of a surge tank 22. A retention member 34 is positioned between the sidewall surface 22 and evaporative fuel adsorbent 32 to prevent oil, which runs down on the sidewall surface 22, from adhering to the evaporative fuel adsorbent 32. The evaporative fuel adsorbent 32 is mounted on the sidewall surface 30 of the surge tank 22 via the retention member 34.
摘要翻译：吸附蒸发燃料的蒸发燃料吸附剂32基本平行于稳压罐22的侧壁表面30定位。保持构件34位于侧壁表面22和蒸发燃料吸附剂32之间，以防止在侧壁表面22上向下流动的油粘附到蒸发燃料吸附剂32上。蒸发燃料吸附剂32通过保持构件34安装在缓冲罐22的侧壁表面30上。

55. 发明申请

US20050188962A1 Fuel vapor adsorbing devices 失效
标题翻译：燃油蒸汽吸附装置
公开(公告)号：US20050188962A1
公开(公告)日：2005-09-01
申请号：US11067507
申请日：2005-02-25
申请人： Kouichi Oda , Minoru Honda , Yuushi Matsushita , Koichi Hoshi , Takaaki Itou , Toshiki Annoura , Hideki Suzuki , Futaba Kanehira , Masahiro Mochizuki
发明人： Kouichi Oda , Minoru Honda , Yuushi Matsushita , Koichi Hoshi , Takaaki Itou , Toshiki Annoura , Hideki Suzuki , Futaba Kanehira , Masahiro Mochizuki
IPC分类号： F01M13/00 , F02M25/08 , F02M33/00 , F02M35/024 , F02M35/10
CPC分类号： F02M25/08 , F02M35/024
摘要： A fuel vapor adsorbing device (10, 60, 70, 70′, 80) for adsorbing residual fuel vapors that remain in an intake conduit (1, 2, 3, 4) of an induction system of an internal combustion engine when the internal combustion engine is stopped may include an adsorbing member (40, 40′) that is constructed to adsorb the residual fuel vapors and is disposed along an inner wall surface of the intake conduit. The adsorbing member is arranged and constructed to form a supplemental intake path (T, T′, T′″) between the adsorbing member and the inner wall surface of the intake conduit, so that intake air of the engine can flow through the supplemental intake path.
摘要翻译：一种燃料蒸气吸附装置（10,60,70,70'，80），用于吸收残留在内燃机的导入系统的进气导管（1,2,3,4）内的燃料蒸汽，当内燃机发动机停止可以包括吸附构件（40,40'），该吸附构件被构造成吸附剩余的燃料蒸气并沿着进气导管的内壁表面设置。吸附构件被布置和构造成在吸附构件和进气导管的内壁表面之间形成补充进气路径（T，T'，T“'），使得发动机的进气可以流过补充进气道。

56. 发明授权

US06545096B1 Heat-resistant plastic sheet and infusion bag using the same 失效
标题翻译：耐热塑料片和输液袋使用相同
公开(公告)号：US06545096B1
公开(公告)日：2003-04-08
申请号：US09684398
申请日：2000-10-10
申请人： Minoru Honda , Kenji Ohmori , Hitoshi Futagawa , Yoshihisa Hama
发明人： Minoru Honda , Kenji Ohmori , Hitoshi Futagawa , Yoshihisa Hama
IPC分类号： C08L2300
CPC分类号： C08J9/18 , A61J1/10 , C08J2323/16 , C08L23/06 , C08L23/0815 , C08L2205/02 , C08L2314/06 , C08L2666/04
摘要： An infusion bag which does not generate a significant number of fine particles in liquid contained in the bag, and has excellent transparency and flexibility, and also has sufficient heat resistance so that deformation does not occur even during sterilization at 115° C. A heat resistant sheet to form the infusion bag is formed from a polymer composition containing 50-70% by weight of a straight-chain polyethylene having a density of 0.928 g/cm3 or more and produced using a metallocene catalyst, 10-30% by weight of a low density polyethylene produced under high-pressure and 20-40% by weight of a straight-chain polyethylene having a density of 0.91 g/cm3 or less and produced using a metallocene catalyst.
摘要翻译：一种输液袋，其不会在包含在袋中的液体中产生大量的细颗粒，并且具有优异的透明性和柔性，并且还具有足够的耐热性，使得即使在115℃的灭菌期间也不会发生变形。耐热性形成输液袋的片材由含有50-70重量％密度为0.928g / cm 3以上的直链状聚乙烯的聚合物组合物形成，使用金属茂催化剂制造，10-30重量％在高压下生产的低密度聚乙烯和20-40重量％的密度为0.91g / cm 3或更低的直链聚乙烯，并使用茂金属催化剂制备。

57. 发明授权

US5437434A Method of preventing generation of earth circulating current in induction heating apparatus for molten steel 失效
标题翻译：防止在钢水感应加热装置中产生地球循环电流的方法
公开(公告)号：US5437434A
公开(公告)日：1995-08-01
申请号：US276800
申请日：1994-07-18
申请人： Yoji Ao , Isao Tokuda , Minoru Honda
发明人： Yoji Ao , Isao Tokuda , Minoru Honda
IPC分类号： B22D11/10 , B22D41/01 , F27D11/06 , H05B6/10 , H05B6/16 , H05B6/20
CPC分类号： F27D11/06 , B22D41/01 , H05B6/16 , H05B6/20
摘要： There is disclosed a method by which a channel-type induction heating apparatus is provided on a tundish, which comprises a steel receiving chamber and a steel discharging chamber separated by a refractory wall, each of which chambers is connected to the ground via molten steel flowing from a ladle, molten steel flowing into a mold, or a refractory, in such a manner that ground circulating current is prevented from being generated. An electromagnetic connection of an induction heating coil and an iron core of a two-leg type or a three-leg type to a loop current circuit in the molten steel is arranged symmetrically, thereby suppressing the generation of the ground circulating current. By thus suppressing the generation of the ground circulating current, it becomes unnecessary to insulate a ground circuit as required in conventional constructions, the maintenance of facilities becomes easier, besides any malfunction of the equipment due to the ground circulating current is totally eliminated.
摘要翻译：公开了一种在中间包上设置通道式感应加热装置的方法，该中间包包括钢容纳室和由耐火壁隔开的钢排放室，每个室通过钢水流动连接到地面从浇包，流入模具的钢水或耐火材料中，以防止产生地面循环电流的方式。感应加热线圈和双腿式或三腿式铁芯与钢水中的回路电路的电磁连接对称配置，从而抑制地面循环电流的产生。通过这样抑制地面循环电流的产生，除了完全消除由于地面循环电流引起的设备故障之外，不需要按照传统结构的要求使接地电路绝缘，因此设备的维护变得容易。

58. 发明授权

US08119545B2 Forming a silicon nitride film by plasma CVD 失效
标题翻译：通过等离子体CVD形成氮化硅膜
公开(公告)号：US08119545B2
公开(公告)日：2012-02-21
申请号：US12935138
申请日：2009-03-30
申请人： Minoru Honda , Toshio Nakanishi , Masayuki Kohno , Tatsuo Nishita , Junya Miyahara
发明人： Minoru Honda , Toshio Nakanishi , Masayuki Kohno , Tatsuo Nishita , Junya Miyahara
IPC分类号： H01L21/31 , C23C16/00
CPC分类号： C23C16/345 , C23C16/45523 , C23C16/511 , H01J37/32192 , H01J2237/3321 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L21/28282
摘要： Provided is a plasma CVD device. In the plasma CVD device, in producing a silicon nitride film while controlling the size of a band gap by CVD, microwaves are introduced into a treatment vessel by a flat antenna having a plurality of holes. The plasma CVD is carried out under a given treatment pressure selected from a pressure range of not less than 0.1 Pa and not more than 1333 Pa at a flow ratio between a silicon-containing compound gas and a nitrogen gas (silicon-containing compound gas flow rate/nitrogen gas flow rate) selected from a range of not less than 0.005 and not more than 0.2, whereby the Si/N ratio in the film is controlled to form a silicon nitride film having a band gap size of not less than 2.5 eV and not more than 7 eV.
摘要翻译：提供了等离子体CVD装置。在等离子体CVD装置中，在通过CVD控制带隙尺寸的同时制造氮化硅膜时，通过具有多个孔的平坦天线将微波引入处理容器。等离子体CVD是在含硅化合物气体和氮气（含硅化合物气体流量（含硅化合物气体流量））的选定压力范围为0.1Pa以上且1333Pa以下的给定处理压力下进行的速率/氮气流量），由此控制膜中的Si / N比，形成带隙尺寸不小于2.5eV的氮化硅膜不超过7 eV。

59. 发明申请

US20110206590A1 SILICON OXIDE FILM, METHOD FOR FORMING SILICON OXIDE FILM, AND PLASMA CVD APPARATUS 审中-公开
标题翻译：硅氧烷膜，形成硅氧烷膜的方法和等离子体CVD装置
公开(公告)号：US20110206590A1
公开(公告)日：2011-08-25
申请号：US13121598
申请日：2009-09-30
申请人： Minoru Honda , Toshio Nakanishi , Masayuki Kohno , Junya Miyahara
发明人： Minoru Honda , Toshio Nakanishi , Masayuki Kohno , Junya Miyahara
IPC分类号： C23C16/40 , C23C16/34 , C23C16/455 , C23C16/511 , C23C16/52 , C01B33/12
CPC分类号： H01L21/31612 , C23C16/308 , C23C16/402 , C23C16/511 , H01L21/0214 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/3145
摘要： To form a dense high-quality silicon oxide film (SiO2 film or SiON film) having excellent insulating properties and an etching rate below or equal to 0.11 nm/s when using a 0.5% dilute hydrofluoric acid solution, plasma CVD is performed by setting a pressure within the processing container in the range from 0.1 Pa to 6.7 Pa. and using a process gas containing an SiCl4 gas or an Si2H6 gas, and an oxygen gas, in a plasma CVD apparatus in which plasma is generated by introducing microwaves into a processing container through a planar antenna having a plurality of holes.
摘要翻译：为了在使用0.5％稀氢氟酸溶液时形成绝缘性优异且蚀刻速度小于或等于0.11nm / s的致密高品质氧化硅膜（SiO 2膜或SiON膜），通过设定在等离子体CVD装置中使用含有SiCl 4气体或Si 2 H 6气体的处理气体和氧气的处理容器内的压力在0.1Pa〜6.7Pa的范围内，其中通过将微波引入等离子体进行处理容器通过具有多个孔的平面天线。

60. 发明申请

US20110086485A1 METHOD FOR MANUFACTURING A MOS SEMICONDUCTOR MEMORY DEVICE, AND PLASMA CVD DEVICE 有权
标题翻译：用于制造MOS半导体存储器件的方法和等离子体CVD器件
公开(公告)号：US20110086485A1
公开(公告)日：2011-04-14
申请号：US12935792
申请日：2009-03-30
申请人： Tetsuo Endoh , Masayuki Kohno , Syuichiro Otao , Minoru Honda , Toshio Nakanishi
发明人： Tetsuo Endoh , Masayuki Kohno , Syuichiro Otao , Minoru Honda , Toshio Nakanishi
IPC分类号： H01L21/336 , C23C16/00
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/45565 , C23C16/511 , H01L21/28282 , H01L29/4234 , H01L29/513 , H01L29/792
摘要： To manufacture a MOS semiconductor memory device having an insulating film laminate in which adjacent insulating films have band-gaps of different sizes, a plasma processing device which transmits microwaves to a chamber by means of a planar antenna having a plurality of holes is used to perform plasma CVD under pressure conditions that differ from at least pressure conditions used when forming the adjacent insulating films, and the insulating films are sequentially formed by altering the band-gaps of the adjacent insulating films that constitute the insulating film laminate.
摘要翻译：为了制造具有绝缘膜层叠体的MOS半导体存储器件，其中相邻的绝缘膜具有不同尺寸的带隙，使用通过具有多个孔的平面天线将微波传输到腔室的等离子体处理装置来执行在形成相邻绝缘膜时使用的至少压力条件不同的压力条件下的等离子体CVD，并且通过改变构成绝缘膜层叠体的相邻绝缘膜的带隙来顺序地形成绝缘膜。

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