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    • 51. 发明申请
    • Information Processor Device and Storage Medium
    • 信息处理器设备和存储介质
    • US20110211436A1
    • 2011-09-01
    • US13126326
    • 2009-10-16
    • Takao WatanabeYasunari ObuchiMasahiro Aoki
    • Takao WatanabeYasunari ObuchiMasahiro Aoki
    • G11B7/00
    • G11B20/10G11B2007/0009G11B2220/235
    • In an information storage device in which small partitions for storing information are three-dimensionally placed inside a solid, the invention aims at long-period storage, robustness, and rapid information reading. Accordingly, the stored three-dimensional information is divided into two-dimensional data for each layer, and two-dimensional inverse Fourier transform is previously applied for the two-dimensional data. The two-dimensional data is recorded in each layer in a Z direction inside a storage medium which is solid. When the information is reproduced, electromagnetic waves are irradiated to a storage area MA as gradually rotating the storage area MA around a z axis, and projection images of all layers during the rotation are obtained from response. By applying one-dimensional Fourier transform for a plurality of projection images obtained as described above, the recorded original three-dimensional information is rapidly reproduced.
    • 本发明的一个信息存储装置,其中用于存储信息的小分区被三维地放置在一个实体内,本发明的目的在于长时间的存储,鲁棒性和快速的信息读取。 因此,将所存储的三维信息划分为每层的二维数据,并且预先对二维数据应用二维傅里叶逆变换。 将二维数据记录在固体存储介质内的Z方向的各层中。 当信息被再现时,电磁波被照射到存储区域MA,使得存储区域MA围绕z轴逐渐旋转,并且从响应中获得旋转期间所有层的投影图像。 通过对如上所述获得的多个投影图像应用一维傅里叶变换,快速地再现所记录的原始三维信息。
    • 53. 发明授权
    • Distributed bragg reflector type directly modulated laser and distributed feed back type directly modulated laser
    • 分布式布拉格反射型直接调制激光和分布式反馈式直接调制激光
    • US07760782B2
    • 2010-07-20
    • US11473011
    • 2006-06-23
    • Masahiro Aoki
    • Masahiro Aoki
    • H01S5/00
    • H01S5/125H01S5/0428H01S5/32391
    • The invention aims at realizing a 1300-nm-band direct modulation laser, having a single lateral mode, in which a chip light power of several milliwatts and a low current operation are simultaneously realized. Also, the invention aims at realizing a laser light source excellent in economy as well by realizing output characteristics of a vertical cavity surface light emitting laser. A distributed Bragg reflector laser is constructed in the form of a semiconductor laser having a multilayer structure formed on a predetermined semiconductor substrate. The multilayer structure includes an active region for emitting a laser beam, and a distributed Bragg reflector layer. A length of the active region falls within the range of 10 to 100 μm, and a laser light beam is generated in accordance with ON/OFF of current injection to the active region.
    • 本发明旨在实现具有单一横向模式的1300nm波段直接调制激光器,其中同时实现几毫瓦的芯片光功率和低电流操作。 另外,本发明的目的在于实现经济性优异的激光光源,实现了垂直腔面发光激光器的输出特性。 分布式布喇格反射激光器以形成在预定半导体衬底上的多层结构的半导体激光器的形式构成。 多层结构包括用于发射激光束的有源区域和分布式布拉格反射器层。 有源区的长度在10〜100μm的范围内,并且根据电流注入的ON / OFF产生激光束到有源区。
    • 54. 发明申请
    • Optical Multiplexer/Demultiplexer
    • 光复用器/解复用器
    • US20080285974A1
    • 2008-11-20
    • US12120680
    • 2008-05-15
    • Makoto TakahashiYasunobu MatsuokaMasahiro Aoki
    • Makoto TakahashiYasunobu MatsuokaMasahiro Aoki
    • H04J14/02
    • G02B6/29365G02B6/29367G02B6/2938G02B6/42G02B6/4246
    • An optical multiplexer/demultiplexer comprising a member, of which first and second opposite planar surfaces are parallel to each other. The member includes therein a void, of which third and fourth opposite planar surfaces are in parallel to each other. An extension of a first line lying on the first planar surface and an extension of a third line lying on the third planar surface intersect each other in a cross section including the void of the member, a smaller one of intersection angles thereof being φ1. An extension of a second line lying on the second planar surface and an extension of a fourth line lying on the fourth planar surface intersect each other, a smaller one of intersection angles thereof being φ1. The third planar surface is provided on a part thereof with at least one high reflection coating film. The fourth planar surface is provided on a part thereof with at least one optical wavelength filter. At least parts of the high reflection coating film and the first optical wavelength filter are opposed to each other. The first optical wavelength filter transmits therethrough light of wavelength λ1 and reflects light of wavelength λ2 (here, wavelength λ1≠wavelength λ2). The member and an interior of the void are different in value of refractive index from each other.
    • 一种光信号多路复用器/解复用器,包括一第一和第二相对平面彼此平行的部件。 该构件包括其中第三和第四相对平面彼此平行的空隙。 位于第一平坦表面上的第一线的延伸部和位于第三平坦表面上的第三线的延伸线在包括构件的空隙的横截面中彼此相交,较小的一个相交角为φ1。 位于第二平坦表面上的第二线的延伸部和位于第四平坦表面上的第四线的延伸部彼此相交,较小的一个相交角为φ1。第三平面设置在其一部分上 与至少一个高反射涂膜。 第四平面在其一部分上设置有至少一个光波长滤波器。 高反射涂膜和第一光波长滤光片的至少一部分彼此相对。 第一光学波长滤波器透过波长为λ1的光并且反射波长λ2的光(这里,波长λ1 <>波长λ2)。 空隙的构件和内部的折射率值彼此不同。
    • 57. 发明申请
    • Optical semiconductor device and optical module using thereof
    • 光半导体器件及其使用的光模块
    • US20060291516A1
    • 2006-12-28
    • US11473011
    • 2006-06-23
    • Masahiro Aoki
    • Masahiro Aoki
    • H01S5/00H01S3/08
    • H01S5/125H01S5/0428H01S5/32391
    • The invention aims at realizing a 1300-nm-band direct modulation laser, having a single lateral mode, in which a chip light power of several milliwatts and a low current operation are simultaneously realized. Also, the invention aims at realizing a laser light source excellent in economy as well by realizing output characteristics of a vertical cavity surface light emitting laser. A distributed Bragg reflector laser is constructed in the form of a semiconductor laser having a multilayer structure formed on a predetermined semiconductor substrate. The multilayer structure includes an active region for emitting a laser beam, and a distributed Bragg reflector layer. A length of the active region falls within the range of 10 to 100 μm, and a laser light beam is generated in accordance with ON/OFF of current injection to the active region.
    • 本发明旨在实现具有单一横向模式的1300nm波段直接调制激光器,其中同时实现几毫瓦的芯片光功率和低电流操作。 另外,本发明的目的在于实现经济性优异的激光光源,实现了垂直腔面发光激光器的输出特性。 分布式布喇格反射激光器以形成在预定半导体衬底上的多层结构的半导体激光器的形式构成。 多层结构包括用于发射激光束的有源区域和分布式布拉格反射器层。 有源区的长度在10〜100μm的范围内,根据电流注入的ON / OFF产生激光束到有源区。