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51. 发明授权

US6058312A Automatic selecting apparatus for an optimum wireless communication route 失效
标题翻译：用于最佳无线通信路由的自动选择装置
公开(公告)号：US6058312A
公开(公告)日：2000-05-02
申请号：US764261
申请日：1996-12-12
申请人： Yoshinobu Kimura
发明人： Yoshinobu Kimura
IPC分类号： H04L1/00 , H04L1/22 , H04L12/28 , H04L29/04 , H04M11/00 , H04W28/04 , H04W40/02 , H04W40/24 , H04W40/34 , H04W76/02 , H04W88/06 , H04Q7/32 , H04Q7/20
CPC分类号： H04W40/02 , H04L45/00 , H04L45/12 , H04W88/06 , H04W40/248 , H04W40/34
摘要： A communication scheme storing section stores a communication route selecting scheme designated from an input section and communication information such as communication history, charge system and a correlation between an electric field intensity and a data communication error rate of each wireless communication system. A communication route selection control section 10 decides a wireless communication route to be used by referring to the communication information stored in the communication scheme storing section according to the communication route selecting scheme stored in the communication scheme storing section, and turns on a communication switch corresponding to the above decided wireless communication route among communication switches. Thus, according to the communication route selecting scheme designated by the user, the optimum wireless communication route corresponding to the wireless communication infrastructure characteristics is automatically selected.
摘要翻译：通信方式存储部存储从输入部指定的通信路线选择方式和通信历史，收费系统以及各无线通信系统的电场强度和数据通信错误率之间的相关性等通信信息。通信路径选择控制部10根据存储在通信方式存储部中的通信路径选择方式，参照存储在通信方式存储部中的通信信息来决定要使用的无线通信路由，并且对应于通信方式到通信交换机之间的上述决定的无线通信路由。因此，根据用户指定的通信路由选择方案，自动选择与无线通信基础设施特征对应的最佳无线通信路由。

52. 发明授权

US4629953A Control circuit for sliding roof devices 失效
标题翻译：滑动屋顶装置的控制电路
公开(公告)号：US4629953A
公开(公告)日：1986-12-16
申请号：US785477
申请日：1985-10-08
申请人： Toshihiro Inoue , Kazuhiro Ozawa , Yoshinobu Kimura
发明人： Toshihiro Inoue , Kazuhiro Ozawa , Yoshinobu Kimura
IPC分类号： B60J7/05 , B60J7/057
CPC分类号： B60J7/0573
摘要： For a sliding roof device (100) having a panel transfer mechanism (11, 12, 13b, 31, 33, 34, 7, 21) for moving a roof panel (2), which is adapted to open and close a roof opening (3a) of a roof (1), between a close position and an open position, a tilt-up mechanism (11, 12, 13a, 32, 33, 34, 7, 21) for moving the roof panel between the close position and a tilt-up position, and a reversible electric motor (51) for actuating the panel transfer mechanism and the tilt-up mechanism, there is provided a control circuit (50) including a first operation switch (58) for actuating the motor to thereby have the roof panel moved from the close position to the open position and the tilt-up position, and a second operation switch (57) for actuating the motor to thereby have the roof panel moved from the open position and the tilt-up position to the close position. The first operation switch (58) is adapted for a single continuous operation thereof for actuating the motor (51 ) to thereby have the roof panel (2) continuously moved from the tilt-up position to the open position or vice versa.
摘要翻译：对于具有用于移动屋顶板（2）的板移动机构（11,12,13b，31,33,34,7,21）的滑动屋顶装置（100），其适于打开和关闭屋顶开口在靠近位置和打开位置之间的屋顶（1）的侧壁（3a），倾斜向上机构（11,12,13a，32,33,34,7,21），用于使顶板在关闭位置和一个向上倾斜的位置和用于致动面板传送机构和倾斜机构的可逆电动机（51），设置有一个控制电路（50），该控制电路包括用于致动马达的第一操作开关（58）使顶板从关闭位置移动到打开位置和倾斜向上位置;以及第二操作开关（57），用于致动马达，从而使顶板从打开位置和向上倾斜位置移动到关闭位置。第一操作开关（58）适于单个连续操作以致动马达（51），从而使屋顶板（2）从倾斜向上位置连续移动到打开位置，反之亦然。

53. 发明授权

US08149095B2 Gateway device allowing home network appliances to be introduced and controlled over a network and a control method therefor 有权
标题翻译：允许家庭网络设备通过网络引入和控制的网关设备及其控制方法
公开(公告)号：US08149095B2
公开(公告)日：2012-04-03
申请号：US12230519
申请日：2008-08-29
申请人： Jun Hayashi , Takaaki Horibuchi , Mitsuharu Ozawa , Yoshinobu Kimura , Masahide Nakamura , Yusuke Fukuoka
发明人： Jun Hayashi , Takaaki Horibuchi , Mitsuharu Ozawa , Yoshinobu Kimura , Masahide Nakamura , Yusuke Fukuoka
IPC分类号： G09F25/00 , G08B9/00 , G08B25/00 , G08B23/00 , G07C9/00 , H04B1/38 , G06F15/177
CPC分类号： H04L12/2832 , H04L12/282 , H04L12/2836
摘要： A gateway device includes a base processor which converts a signal input from an IP network to a signal which can be handled by the gateway device, and a home appliance control processor having a controller which converts the signal which can be handled by the gateway device to a control signal in compliance with the communications protocol of a home appliance to be controlled. The controller stores, on a table, information about the communications protocol, driver, controllable setting condition and status of respective appliances to be controlled in association with each other. The controller also includes a conversion functional block which converts information supplied to the control information of the communications protocol of the respective appliances to be controlled on the basis of the stored information.
摘要翻译：网关装置包括：基站处理器，其将从IP网络输入的信号转换为可由网关装置处理的信号;以及家用电器控制处理器，其具有将可由网关装置处理的信号转换为符合要控制的家用电器的通信协议的控制信号。控制器在表上存储关于要相互控制的各个设备的通信协议，驱动程序，可控设置条件和状态的信息。控制器还包括转换功能块，该转换功能块根据所存储的信息转换提供给要控制的各个设备的通信协议的控制信息的信息。

54. 发明授权

US08114217B2 Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus 失效
标题翻译：结晶方法，结晶装置，处理衬底，薄膜晶体管和显示装置
公开(公告)号：US08114217B2
公开(公告)日：2012-02-14
申请号：US12166997
申请日：2008-07-02
申请人： Masayuki Jyumonji , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
发明人： Masayuki Jyumonji , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
IPC分类号： C30B1/02
CPC分类号： H01L21/02678 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , C30B13/24 , H01L21/02686 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675 , Y10T117/1004 , Y10T117/1008
摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.
摘要翻译：提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求，结晶装置，薄膜晶体管和显示装置。当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少，熔融非单晶半导体的光强度。此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

55. 发明授权

US07944024B2 Semiconductor device and manufacturing method of the same 失效
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US07944024B2
公开(公告)日：2011-05-17
申请号：US12894609
申请日：2010-09-30
申请人： Masao Kondo , Nobuyuki Sugii , Yoshinobu Kimura
发明人： Masao Kondo , Nobuyuki Sugii , Yoshinobu Kimura
IPC分类号： H01L31/117
CPC分类号： H01L29/7835 , H01L29/1054 , H01L29/165 , H01L29/6659 , H01L29/66659
摘要： A semiconductor device is provided which is capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The strained layer has a thickness adjusted to be thicker than the critical film thickness at which no misfit dislocation occurs. Accordingly, misfit dislocations occur in the vicinity of the interface between the strained silicon layer and silicon-germanium layer.
摘要翻译：提供一种半导体器件，其能够抑制在应变硅层中形成的沟道区域中的电子迁移率的降低。在半导体衬底上形成的p型硅 - 锗层上形成应变硅层。应变层的厚度被调整为比不发生失配位错的临界膜厚度更厚。因此，失配位错发生在应变硅层和硅 - 锗层之间的界面附近。

56. 发明申请

US20090180190A1 CRYSTALLIZATION APPARATUS, OPTICAL MEMBER FOR USE IN CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, MANUFACTURING METHOD OF THIN FILM TRANSISTOR, AND MANUFACTURING METHOD OF MATRIX CIRCUIT SUBSTRATE OF DISPLAY 失效
标题翻译：结晶装置，用于结晶装置的光学构件，结晶方法，薄膜晶体管的制造方法和显示器的矩阵电路基板的制造方法
公开(公告)号：US20090180190A1
公开(公告)日：2009-07-16
申请号：US12403726
申请日：2009-03-13
申请人： Yukio TANIGUCHI , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
发明人： Yukio TANIGUCHI , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
IPC分类号： G02B27/10
CPC分类号： G03B21/56 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.
摘要翻译：结晶方法包括将入射光束波前分割成多个光束，将波前划分的光束聚集在相移掩模的相应相移部分中或在相移部分附近以形成光束具有在与相移掩模的相移部分相对应的点中光强度最小的逆峰值图案的光强度分布，以及用具有光的光束照射多晶半导体膜或非晶半导体膜强度分布以产生结晶的半导体膜。

57. 发明申请

US20090072991A1 Gateway device allowing home network appliances to be introduced and controlled over a network and a control method therefor 有权
标题翻译：允许家庭网络设备通过网络引入和控制的网关设备及其控制方法
公开(公告)号：US20090072991A1
公开(公告)日：2009-03-19
申请号：US12230519
申请日：2008-08-29
申请人： Jun Hayashi , Takaaki Horibuchi , Mitsuharu Ozawa , Yoshinobu Kimura , Masahide Nakamura , Yusuke Fukuoka
发明人： Jun Hayashi , Takaaki Horibuchi , Mitsuharu Ozawa , Yoshinobu Kimura , Masahide Nakamura , Yusuke Fukuoka
IPC分类号： G06F13/42
CPC分类号： H04L12/2832 , H04L12/282 , H04L12/2836
摘要： A gateway device includes a base processor which converts a signal input from an IP network to a signal which can be handled by the gateway device, and a home appliance control processor having a controller which converts the signal which can be handled by the gateway device to a control signal in compliance with the communications protocol of a home appliance to be controlled. The controller stores, on a table, information about the communications protocol, driver, controllable setting condition and status of respective appliances to be controlled in association with each other. The controller also includes a conversion functional block which converts information supplied to the control information of the communications protocol of the respective appliances to be controlled on the basis of the stored information.
摘要翻译：网关装置包括：基站处理器，其将从IP网络输入的信号转换为可由网关装置处理的信号;以及家用电器控制处理器，其具有将可由网关装置处理的信号转换为符合要控制的家用电器的通信协议的控制信号。控制器在表上存储关于要相互控制的各个设备的通信协议，驱动程序，可控设置条件和状态的信息。控制器还包括转换功能块，该转换功能块根据所存储的信息转换提供给要控制的各个设备的通信协议的控制信息的信息。

58. 发明授权

US07491972B1 Polysilicon semiconductor thin film substrate, method for producing the same, semiconductor device, and electronic device 有权
标题翻译：多晶硅半导体薄膜基板，其制造方法，半导体器件和电子器件
公开(公告)号：US07491972B1
公开(公告)日：2009-02-17
申请号：US10019407
申请日：2000-06-23
申请人： Yoshinobu Kimura , Takahiro Kamo , Yoshiyuki Kaneko
发明人： Yoshinobu Kimura , Takahiro Kamo , Yoshiyuki Kaneko
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L27/1285 , H01L27/1296 , H01L29/66757
摘要： A semiconductor device and a method of manufacture thereof by forming an amorphous semiconductor film on the surface of an insulative substrate, and irradiating the amorphous semiconductor film with a laser beam to crystallize it to form a polycrystalline semiconductor thin film. A transistor is then formed in the polycrystalline semiconductor thin film. More specifically, a UV-ray is irradiated to the rear face of the insulative substrate or the amorphous semiconductor film to heat the amorphous semiconductor film to a melting temperature or lower. Then a laser beam at a suitable shape selection laser energy density Ec forms the crystal grains with the number of closest crystal grains of 6 most predominantly being irradiated to convert the amorphous semiconductor film into a polycrystalline semiconductor thin film. The thin film transistor formed in this structure has a high yield and is capable of high-speed operation.
摘要翻译：一种半导体器件及其制造方法，其通过在绝缘性基板的表面上形成非晶半导体膜，并用激光束照射所述非晶半导体膜，使其结晶而形成多晶半导体薄膜。然后在多晶半导体薄膜中形成晶体管。更具体地，将紫外线照射到绝缘基板或非晶半导体膜的背面，以将非晶半导体膜加热至熔融温度以下。然后以合适的形状选择激光能量密度Ec的激光束形成最主要被照射的最接近晶粒数6的晶粒，以将非晶半导体膜转换为多晶半导体薄膜。在该结构中形成的薄膜晶体管具有高产率并且能够高速操作。

59. 发明授权

US07410848B2 Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus 失效
标题翻译：结晶方法，结晶装置，处理衬底，薄膜晶体管和显示装置
公开(公告)号：US07410848B2
公开(公告)日：2008-08-12
申请号：US10878331
申请日：2004-06-29
申请人： Masayuki Jyumonji , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
发明人： Masayuki Jyumonji , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
IPC分类号： H01L21/84
CPC分类号： H01L21/02678 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , C30B13/24 , H01L21/02686 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675 , Y10T117/1004 , Y10T117/1008
摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.
摘要翻译：提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求，结晶装置，薄膜晶体管和显示装置。当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少，熔融非单晶半导体的光强度。此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

60. 发明授权

US07335261B2 Apparatus for forming a semiconductor thin film 有权
标题翻译：用于形成半导体薄膜的装置
公开(公告)号：US07335261B2
公开(公告)日：2008-02-26
申请号：US11198656
申请日：2005-08-05
申请人： Masakiyo Matsumura , Mikihiko Nishitani , Yoshinobu Kimura , Masayuki Jyumonji , Yukio Taniguchi , Masato Hiramatsu , Fumiki Nakano
发明人： Masakiyo Matsumura , Mikihiko Nishitani , Yoshinobu Kimura , Masayuki Jyumonji , Yukio Taniguchi , Masato Hiramatsu , Fumiki Nakano
IPC分类号： C30B1/04
CPC分类号： H01L21/02678 , B23K26/06 , B23K26/066 , B23K2101/40 , C30B1/00 , C30B13/24 , C30B29/06 , H01L21/02691 , H01L21/2026 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016
摘要： Disclosed are apparatus for forming a semiconductor film having an excellent crystallinity from a non-single crystal semiconducting layer formed on a base layer made of an insulating material. The apparatus includes a light source, a homogenizer for homogenizing an intensity distribution of the emitted light, an amplitude-modulation means for performing the amplitude-modulation such that the amplitude of the light, of which the intensity distribution is homogenized, is increased in the direction of the relative motion of the light to the base layer, an optional light projection optical system for projecting the amplitude-modulated light onto the surface of the non-single crystal semiconductor such that a predetermined irradiation energy can be obtained, a phase shifter for providing a low temperature point in the surface irradiated by the light, and a substrate stage to move the light relative to the substrate thereby enabling scanning in the X and Y axis.
摘要翻译：公开了一种从由绝缘材料制成的基底层上形成的非单晶半导体层形成具有优异结晶度的半导体膜的装置。该装置包括光源，用于均匀化发射光的强度分布的均质器，用于执行调幅的幅度调制装置，使得强度分布均匀化的光的振幅在光向基层的相对运动的方向，用于将调幅光投影到非单晶半导体的表面上以使得能够获得预定的照射能量的可选的光投射光学系统，用于在由光照射的表面中提供低温点，以及衬底台，以相对于衬底移动光，从而使得能够在X和Y轴上进行扫描。

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