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    • 51. 发明授权
    • Steam turbine rotor and steam turbine plant
    • 蒸汽轮机转子和汽轮机厂
    • US07459035B2
    • 2008-12-02
    • US10864418
    • 2004-06-10
    • Shinya ImanoHiroyuki DoiHirotsugu KawanakaEiji Saitou
    • Shinya ImanoHiroyuki DoiHirotsugu KawanakaEiji Saitou
    • C22C19/05C22C30/00
    • C22F1/10C22C19/05C22C19/056C22C19/058C22C30/00C22C38/06C22C38/48C22C38/50F05B2220/301
    • To provide a rotor material preferable for a steam turbine of which main steam temperature is 675° C. or more, particularly exceeding 700° C., and a steam turbine plant having a rotor formed by the material, the invention provides a steam turbine plant including a very-high-pressure turbine of which steam inlet temperature is 675 to 725° C. and steam outlet temperature is 650° C. or less, a high-pressure turbine, and a medium-low-pressure turbine, wherein a rotor of the very-high-pressure turbine is formed from a forged material of NiFe-base alloy containing: 14 to 18 weight % Cr, 15 to 45 weight % Fe, 1.0 to 2.0 weight % Al, 1.0 to 1.8 weight % Ti, C and N of which the sum is 0.05 or less weight %, and Nb in the range specified by the formula: 3.5−(Fe weight %)/20
    • 为了提供优选主蒸汽温度为675℃或更高,特别是超过700℃的蒸汽轮机的转子材料,以及具有由该材料形成的转子的蒸汽轮机设备,本发明提供了一种汽轮机设备 包括蒸汽入口温度为675〜725℃,蒸汽出口温度为650℃以下的高压涡轮机,高压涡轮机和中低压涡轮机,其中转子 的超高压涡轮机由NiFe基合金的锻造材料形成,该锻造材料包含:14-18重量%的Cr,15-45重量%的Fe,1.0-2.0重量%的Al,1.0-1.8重量%的Ti,C 并且其总和为0.05重量%以下的Nb,Nb在由式3.5-(Fe重量%)/ 20 <(Nb重量%)<4.5-(Fe重量%)/ 20)规定的范围内。
    • 52. 发明授权
    • Ni-based superalloy having high oxidation resistance and gas turbine part
    • 具有高抗氧化性的Ni基超级合金和燃气轮机部件
    • US07169241B2
    • 2007-01-30
    • US10804065
    • 2004-03-19
    • Hideki TamakiAkira YoshinariAkira OkayamaTsuyoshi TakanoHiroyuki Doi
    • Hideki TamakiAkira YoshinariAkira OkayamaTsuyoshi TakanoHiroyuki Doi
    • C22C19/05
    • C22C19/056C22C19/057
    • A Ni-based alloy hardened with the γ′ phase, which is able to exhibit not only superior strength at high temperatures, but also excellent hot corrosion resistance and oxidation resistance at high temperatures in spite of containing no Re or reducing the amount of Re. The Ni-based superalloy contains, by weight, C: 0.01 to 0.5%, B: 0.01 to 0.04%, Hf: 0.1 to 2.5%, Co: 0.8 to 15%, Ta: more than 0% but less than 8.5%, Cr: 1.5 to 16%, Mo: more than 0% but less than 1.0%, W: 5 to 14%, Ti: 0.1 to 4.75%, Al: 2.5 to 7%, Nb: more than 0% but less than 4%, V: 0 to less than 1.0%, Zr: 0 to less than 0.1%, Re: 0 to less than 9%, at least one of platinum group elements: 0 to less than 0.5% in total, at least one of rare earth elements: 0 to less than 0.1% in total, and the rest being Ni except for unavoidable impurities.
    • 用γ-相硬化的Ni基合金,不仅在高温下不仅表现出优异的强度,而且在高温下也表现出优异的耐热腐蚀性和抗氧化性,尽管不含Re或减少Re的量。 Ni基超合金含有C:0.01〜0.5%,B:0.01〜0.04%,Hf:0.1〜2.5%,Co:0.8〜15%,Ta:0%以上且小于8.5% Cr:1.5〜16%,Mo:大于0%但小于1.0%,W:5〜14%,Ti:0.1〜4.75%,Al:2.5〜7%,Nb:大于0% %,V:0〜小于1.0%,Zr:0〜小于0.1%,Re:0〜小于9%,铂族元素中的至少一种:0〜小于0.5% 稀土元素总计为0〜小于0.1%,其余为Ni,不含不可避免的杂质。
    • 56. 发明授权
    • Semiconductor devices constitute constant voltage devices used to raise internal voltage
    • 半导体器件构成用于提高内部电压的恒压器件
    • US06784520B2
    • 2004-08-31
    • US10411268
    • 2003-04-11
    • Hiroyuki Doi
    • Hiroyuki Doi
    • H01L29861
    • H01L29/866H01L21/26586H01L29/417H01L29/66106
    • A constant voltage device includes n-type and p-type doped layers. The n-type doped layer is formed by heavily doping with an n-type impurity an upper portion of a p-type silicon semiconductor substrate, in an active region defined by an isolating insulator film. The p-type doped layer is formed by doping the region under the n-type doped layer with a p-type impurity. The n-type and p-type doped layers are provided to form two layers in parallel with the substrate surface of the semiconductor substrate, whereby a pn junction formed between the n-type and p-type doped layers creates a diode structure. Impurity concentration in the p-type doped layer is established so that the impurity concentration of a portion adjacent the isolating insulator film is lower that that of the rest.
    • 恒电压装置包括n型和p型掺杂层。 在由隔离绝缘膜限定的有源区中,通过在p型硅半导体衬底的上部重掺杂n型杂质而形成n型掺杂层。 p型掺杂层通过用p型杂质掺杂在n型掺杂层下方的区域而形成。 提供n型和p型掺杂层以与半导体衬底的衬底表面平行形成两层,由此形成在n型掺杂层和p型掺杂层之间的pn结形成二极管结构。 p型掺杂层中的杂质浓度被建立为使得邻近隔离绝缘膜的部分的杂质浓度低于其余部分的杂质浓度。
    • 57. 发明授权
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • US06753222B2
    • 2004-06-22
    • US10271879
    • 2002-10-15
    • Ken MimuroHiroyuki DoiYasushi Okuda
    • Ken MimuroHiroyuki DoiYasushi Okuda
    • H01L21336
    • H01L27/11526H01L27/105H01L27/11534
    • A method for forming a semiconductor device is provided that allows a desirable semiconductor device to be obtained by preventing a gate electrode of a non-volatile semiconductor memory from having an abnormal shape and the surfaces of high concentration source and drain regions of the non-volatile semiconductor memory from being worn away. The method includes a first step of forming a non-volatile semiconductor memory in a first region of a substrate of the semiconductor device and a second step of forming a semiconductor device in a second region on the substrate. The non-volatile semiconductor memory includes a first gate including a tunnel insulating film, a floating gate electrode, a capacitor insulating film, and a control gate electrode, and the semiconductor device includes a second gate including a gate insulating film and a gate electrode. In this method, during patterning of the second gate, a surface of the first gate is covered with a protective film that hardly can be etched by an etchant used for the patterning of the second gate.
    • 提供一种用于形成半导体器件的方法,其通过防止非易失性半导体存储器的栅电极具有异常形状并且使非挥发性的高浓度源极和漏极区域的表面能够获得期望的半导体器件 半导体存储器被磨损掉。 该方法包括在半导体器件的衬底的第一区域中形成非易失性半导体存储器的第一步骤和在衬底上的第二区域中形成半导体器件的第二步骤。 非易失性半导体存储器包括:第一栅极,其包括隧道绝缘膜,浮栅电极,电容绝缘膜和控制栅电极,并且所述半导体器件包括包括栅极绝缘膜和栅电极的第二栅极。 在该方法中,在图案化第二栅极期间,第一栅极的表面被几乎不能被用于第二栅极图案化的蚀刻剂所蚀刻的保护膜覆盖。
    • 59. 发明授权
    • Semiconductor device and method for driving the same
    • 半导体装置及其驱动方法
    • US06388308B1
    • 2002-05-14
    • US09239949
    • 1999-01-29
    • Hirotsugu HondaHiroyuki DoiKatsujirou AraiTakuo AkashiNaritsugu Yoshii
    • Hirotsugu HondaHiroyuki DoiKatsujirou AraiTakuo AkashiNaritsugu Yoshii
    • H01L29861
    • H01L29/66106H01L29/0638H01L29/866
    • A field oxide surrounding an active region, an N-type doped layer formed in the active region, and an electrode formed on the field oxide in the vicinity of the active region are provided on a P-type semiconductor substrate. During the operation as a constant voltage device, a desired voltage is applied to the electrode. Then, trapping of carriers in the interface between the field oxide and the semiconductor region can be suppressed, although such trapping is ordinarily caused by a reverse breakdown phenomenon at the pn junction between the doped layer and the P-type semiconductor substrate. Accordingly, the variation in strength of the electric field between the doped layer and the semiconductor substrate can be suppressed. As a result, it is possible to suppress a variation in reverse withstand voltage, which is usually caused by a reverse breakdown voltage at a pn junction, for a semiconductor device functioning as a constant voltage device.
    • 围绕有源区的场氧化物,在有源区中形成的N型掺杂层和形成在有源区附近的场氧化物上的电极设置在P型半导体衬底上。 在作为恒压装置的操作期间,将期望的电压施加到电极。 然后,可以抑制在场氧化物和半导体区域之间的界面中的载流子的捕获,尽管这种捕获通常由掺杂层和P型半导体衬底之间的pn结处的反向击穿现象引起。 因此,可以抑制掺杂层和半导体衬底之间的电场强度的变化。 结果,对于作为恒压器件起作用的半导体器件,可以抑制通常由pn结上的反向击穿电压引起的反向耐受电压的变化。
    • 60. 发明授权
    • Steam turbine blade, method of manufacturing the same, steam turbine power generating plant and low pressure steam turbine
    • 蒸汽轮机叶片及其制造方法,蒸汽轮机发电厂和低压汽轮机
    • US06206634B1
    • 2001-03-27
    • US09369166
    • 1999-08-05
    • Hiroyuki DoiMitsuo KuriyamaShigeyoshi NakamuraShinya ImanoTakeshi Onoda
    • Hiroyuki DoiMitsuo KuriyamaShigeyoshi NakamuraShinya ImanoTakeshi Onoda
    • F01D102
    • C22C14/00C22C38/44C22C38/46C22C38/52C22F1/183F01D5/28F05D2220/31F05D2300/133Y10T29/49336Y10T29/49339
    • There is provided a steam turbine blade made of Ti-base alloy comprising an &agr;+&bgr; type phase in which a difference of a tensile strength is small between a blade portion and a dovetail portion, a tensile strength at a room temperature of the dovetail portion is equal to or more than 100 kg/mm2 and a suitable toughness is commonly provided together with a strength, as a steam turbine blade having a length of 43 inch or more, a method of manufacturing the same, a steam turbine power generating plant and a low pressure steam turbine. In the steam turbine blade having a blade portion and a plurality of fork type dovetails, wherein the blade is made of Ti-base alloy structured such that a length of the blade portion is equal to or more than 52 inches with respect to a rotational speed 3000 rpm of the blade or equal to or more than 43 inches with respect to the rotational speed 3600 rpm, and a tensile strength at a room temperature of the dovetail is equal to or more than 100 kg/mm2, preferably equal to or more than 110 kg/mm2 and equal to or more than 96% of the tensile strength at the room temperature of the blade portion.
    • 提供了一种由Ti基合金制成的汽轮机叶片,其包括α+β型相,其中叶片部分和燕尾部分之间的拉伸强度差异小,燕尾部分的室温下的拉伸强度 等于或大于100kg / mm2,并且合适的韧性通常与强度一起提供,作为具有43英寸或更长的长度的蒸汽轮机叶片,其制造方法,蒸汽轮机发电设备和 低压蒸汽轮机。 在具有叶片部分和多个叉形燕尾形的汽轮机叶片中,其中叶片由Ti基合金制成,使得叶片部分的长度相对于转速等于或大于52英寸 相对于转速3600rpm等于或大于43英寸,燕尾榫的室温拉伸强度等于或大于100kg / mm2,优选等于或大于等于或大于 110kg / mm2,等于或大于在叶片部分的室温下的拉伸强度的96%。