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1. 发明授权

US06686641B2 Semiconductor device and method for driving the same 有权
标题翻译：半导体装置及其驱动方法
公开(公告)号：US06686641B2
公开(公告)日：2004-02-03
申请号：US10079510
申请日：2002-02-22
申请人： Hirotsugu Honda , Hiroyuki Doi , Katsujirou Arai , Takuo Akashi , Naritsugu Yoshii
发明人： Hirotsugu Honda , Hiroyuki Doi , Katsujirou Arai , Takuo Akashi , Naritsugu Yoshii
IPC分类号： H01L29861
CPC分类号： H01L29/66106 , H01L29/0638 , H01L29/866
摘要： A field oxide surrounding an active region, an N-type doped layer formed in the active region, and an electrode formed on the field oxide in the vicinity of the active region are provided on a P-type semiconductor substrate. During the operation as a constant voltage device, a desired voltage is applied to the electrode. Then, trapping of carriers in the interface between the field oxide and the semiconductor region can be suppressed, although such trapping is ordinarily caused by a reverse breakdown phenomenon at the pn junction between the doped layer and the P-type semiconductor substrate. Accordingly, the variation in strength of the electric field between the doped layer and the semiconductor substrate can be suppressed. As a result, it is possible to suppress a variation in reverse withstand voltage, which is usually caused by a reverse breakdown voltage at a pn junction, for a semiconductor device functioning as a constant voltage device.
摘要翻译：围绕有源区的场氧化物，在有源区中形成的N型掺杂层和形成在有源区附近的场氧化物上的电极设置在P型半导体衬底上。在作为恒压装置的操作期间，将期望的电压施加到电极。然后，可以抑制在场氧化物和半导体区域之间的界面中的载流子的捕获，尽管这种捕获通常由掺杂层和P型半导体衬底之间的pn结处的反向击穿现象引起。因此，可以抑制掺杂层和半导体衬底之间的电场强度的变化。结果，对于作为恒压器件起作用的半导体器件，可以抑制通常由pn结上的反向击穿电压引起的反向耐受电压的变化。

2. 发明授权

US06388308B1 Semiconductor device and method for driving the same 失效
标题翻译：半导体装置及其驱动方法
公开(公告)号：US06388308B1
公开(公告)日：2002-05-14
申请号：US09239949
申请日：1999-01-29
申请人： Hirotsugu Honda , Hiroyuki Doi , Katsujirou Arai , Takuo Akashi , Naritsugu Yoshii
发明人： Hirotsugu Honda , Hiroyuki Doi , Katsujirou Arai , Takuo Akashi , Naritsugu Yoshii
IPC分类号： H01L29861
CPC分类号： H01L29/66106 , H01L29/0638 , H01L29/866
摘要： A field oxide surrounding an active region, an N-type doped layer formed in the active region, and an electrode formed on the field oxide in the vicinity of the active region are provided on a P-type semiconductor substrate. During the operation as a constant voltage device, a desired voltage is applied to the electrode. Then, trapping of carriers in the interface between the field oxide and the semiconductor region can be suppressed, although such trapping is ordinarily caused by a reverse breakdown phenomenon at the pn junction between the doped layer and the P-type semiconductor substrate. Accordingly, the variation in strength of the electric field between the doped layer and the semiconductor substrate can be suppressed. As a result, it is possible to suppress a variation in reverse withstand voltage, which is usually caused by a reverse breakdown voltage at a pn junction, for a semiconductor device functioning as a constant voltage device.
摘要翻译：围绕有源区的场氧化物，在有源区中形成的N型掺杂层和形成在有源区附近的场氧化物上的电极设置在P型半导体衬底上。在作为恒压装置的操作期间，将期望的电压施加到电极。然后，可以抑制在场氧化物和半导体区域之间的界面中的载流子的捕获，尽管这种捕获通常由掺杂层和P型半导体衬底之间的pn结处的反向击穿现象引起。因此，可以抑制掺杂层和半导体衬底之间的电场强度的变化。结果，对于作为恒压器件起作用的半导体器件，可以抑制通常由pn结上的反向击穿电压引起的反向耐受电压的变化。

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