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    • 54. 发明授权
    • Silver halide color photographic material comprising at least one
DIR-hydroquinone compound, and having a total silver content of less
than 1.0 g/m.sup.2
    • 包含至少一种DIR-氢醌化合物,并且总银含量小于1.0g / m 2的卤化银彩色照相材料
    • US5310638A
    • 1994-05-10
    • US783113
    • 1991-10-25
    • Sadanobu ShutoTakashi Ozawa
    • Sadanobu ShutoTakashi Ozawa
    • G03C7/30G03C7/305G03C1/46
    • G03C7/3022G03C7/30511Y10S430/158
    • A silver halide color photographic material comprises a support, a blue sensitive layer, a green sensitive layer and a red sensitive layer. The total silver content of the photographic material is not more than 1.0 g/m.sup.2. The photographic material further contains a compound represented by the formula (1a) or (1b): ##STR1## in which R.sup.12 is an aliphatic group, an aromatic group or a heterocyclic group; M is --CO--, --SO.sub.2 --, --N(R.sup.15)CO--, --OCO-- or --N(R.sup.15)SO.sub.2 --; each of R.sup.14, R.sup.15 and R.sup.24 independently is hydrogen, an alkyl group or an aryl group; L is a divalent linking group necessary for forming a 5, 6 or 7-membered ring; each of R.sup.11, R.sup.13 and R.sup.21 independently is hydrogen or a substituent group of the hydroquinone nucleus; Time is a group which is released from the oxidation product of the hydroquinone nucleus to further release X; X is a development inhibitor; and t is 0 or 1. M preferably is --SO.sub.2 --, --N(R.sup.15)CO--, --OCO-- or --N(R.sup.15)SO.sub.2 --.
    • 卤化银彩色照相材料包括载体,感蓝敏感层,感绿层和红色敏感层。 照相材料的总银含量不超过1.0g / m 2。 照相材料还含有式(1a)或(1b)表示的化合物:其中R 12是脂族基团,芳族基团或杂环基团; M是-CO - , - SO 2 - , - N(R 15)CO - , - OCO-或-N(R 15)SO 2 - ; R 14,R 15和R 24各自独立地为氢,烷基或芳基; L是形成5,6或7-元环所必需的二价连接基团; R11,R13和R21各自独立地为氢或氢醌核的取代基; 时间是从氢醌核的氧化产物释放出来进一步释放X的基团; X是开发抑制剂; 并且t为0或1.M优选为-SO 2 - , - N(R 15)CO - , - OCO-或-N(R 15)SO 2 - 。
    • 60. 发明授权
    • Image sensor
    • 图像传感器
    • US4589026A
    • 1986-05-13
    • US521104
    • 1983-08-08
    • Takashi OzawaMutsuo Takenouchi
    • Takashi OzawaMutsuo Takenouchi
    • H04N1/028G06T1/00H01L27/146H04N1/031H04N1/193H04N1/10
    • H04N1/031H01L27/14665H04N1/1931
    • In the image sensor, thin film transistors are provided in the one-to-one correspondence to the photoelectric conversion element these thin film transistors being divided into blocks of adjoining ones whose gate electrodes are mutually connected, and the switching signal is sequentially supplied to each mutually connected gate electrodes of the same block. Further, the output electrodes of those thin film transistors located in the corresponding positions in each odd and even numbered blocks are mutually connected, and the charge transfer circuits comprising the MOS transistors are provided corresponding to respective common connection line groups of odd numbered block and even numbered block. By this construction, at the time of picking up the outputs of the photoelectric conversion elements, the switching period for the thin film transistors can be retained as long as the original reading time of a plurality of the photoelectric conversion elements corresponding to a plurality of the thin film transistors whose gate electrodes are mutually connected, and therefore the speed of outputting read signal is determined soley by the MOS transistor switching speed. In addition, the number of the connection lines required may be as small as the number of the common connection lines.
    • 在图像传感器中,薄膜晶体管与光电转换元件一一对应地提供,这些薄膜晶体管被分成与栅极相互连接的相邻块的块,并且切换信号被顺序地提供给每个 相同块的相互连接的栅电极。 此外,位于每个奇数和偶数个块中的相应位置的那些薄膜晶体管的输出电极相互连接,并且包括MOS晶体管的电荷转移电路相应于奇数块和偶数块的各个公共连接线组 编号块。 通过这种结构,在拾取光电转换元件的输出时,可以保持薄膜晶体管的切换周期,只要多个光电转换元件的原始读取时间对应于多个 其栅电极相互连接的薄膜晶体管,因此通过MOS晶体管的切换速度来确定输出读取信号的速度。 此外,所需的连接线的数量可以与公共连接线的数量一样小。