专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US5252174A Method for manufacturing substrates for depositing diamond thin films 失效
标题翻译：制造用于沉积金刚石薄膜的衬底的方法
公开(公告)号：US5252174A
公开(公告)日：1993-10-12
申请号：US888430
申请日：1992-05-28
申请人： Masahiro Deguchi , Takashi Hirao
发明人： Masahiro Deguchi , Takashi Hirao
IPC分类号： C23C14/48 , C23C16/02 , C30B25/02 , C30B25/18 , C30B25/08
CPC分类号： C30B25/18 , C23C14/48 , C23C16/0209 , C23C16/0272 , C30B25/02 , C30B29/04
摘要： A method for manufacturing substrates for depositing diamond thin films is disclosed.In the method, a hydrocarbon gas is discharge-decomposed, products generated by the discharge decomposition are accelerated to implant them in a surface layer of a substrate made of a material other than diamond and, thereby, the surface layer having bondings of carbon atoms and atoms compositing the substrate. Desirably, the substrate thus manufactured is subjected to a heat treatment at a temperature ranging from 800.degree. to 1,200.degree. C.
摘要翻译：公开了一种制造用于沉积金刚石薄膜的衬底的方法。在该方法中，碳氢化合物气体被放电分解，通过放电分解产生的产物被加速以将它们植入到由除了金刚石之外的材料制成的衬底的表面层中，从而使表面层具有碳原子和原子合成基底。理想地，将如此制造的基板在800-1200℃的温度下进行热处理。

52. 发明授权

US08924636B2 Management information generating method, logical block constructing method, and semiconductor memory device 有权
标题翻译：管理信息生成方法，逻辑块构造方法和半导体存储器件
公开(公告)号：US08924636B2
公开(公告)日：2014-12-30
申请号：US13609991
申请日：2012-09-11
申请人： Takashi Hirao , Hirokuni Yano , Aurelien Nam Phong Tran , Mitsunori Tadokoro , Hiroki Matsudaira , Tatsuya Sumiyoshi , Yoshimi Niisato , Kenji Tanaka
发明人： Takashi Hirao , Hirokuni Yano , Aurelien Nam Phong Tran , Mitsunori Tadokoro , Hiroki Matsudaira , Tatsuya Sumiyoshi , Yoshimi Niisato , Kenji Tanaka
IPC分类号： G06F12/10 , G06F12/02
CPC分类号： G06F12/0246 , G06F12/1009 , G06F2212/1032 , G06F2212/7201 , G11C16/349
摘要： A management information generating method wherein logical and physical block addresses (BAs) of continuous addresses are associated with each other in the BA translation table. When a logical block is constructed, a value is set for a maximum number of allowable defective physical blocks. A logical block having fewer defects than the set number is set usable, and a logical block having more defects than the set number is set unusable. System logical block construction is performed to preferentially select physical blocks from a plane list including a large number of usable blocks to equalize the number of usable blocks in each plane list. It is determined whether the number of free blocks is insufficient on the basis of a first management unit and whether the storage area for the indicated capacity can be reserved on the basis of the management unit different from the first unit.
摘要翻译：一种管理信息生成方法，其中连续地址的逻辑和物理块地址（BA）在BA转换表中彼此相关联。当构建逻辑块时，为允许的有缺陷的物理块的最大数量设置一个值。具有比设定号码少的缺陷的逻辑块被设置为可用，并且具有比设定号码多的缺陷的逻辑块被设置为不可用。执行系统逻辑块构造以从包括大量可用块的平面列表中优先选择物理块以均衡每个平面列表中的可用块的数量。基于第一管理单元确定空闲块的数量是否不足，以及是否可以基于与第一单元不同的管理单元来保留指示容量的存储区域。

53. 发明授权

US08825946B2 Memory system and data writing method 有权
标题翻译：内存系统和数据写入方式
公开(公告)号：US08825946B2
公开(公告)日：2014-09-02
申请号：US13616466
申请日：2012-09-14
申请人： Ryoichi Kato , Mitsunori Tadokoro , Takashi Hirao
发明人： Ryoichi Kato , Mitsunori Tadokoro , Takashi Hirao
IPC分类号： G06F12/00
CPC分类号： G06F3/064 , G06F3/0616 , G06F3/0679 , G06F12/0246 , G06F2212/7203 , G06F2212/7205
摘要： According to one embodiment, when a controller writes update data in a second memory to a first memory which is nonvolatile and a difference between a size of a page and a size of the update data is equal to or greater than a size of a cluster, the controller configured to generate write data by adding, to the update data, data which has the size of the cluster, store an update content of management information corresponding to the update data and an update content storage position indicating a storage position of the update content of the management information in the first memory, and write the generated write data to a block in writing of the first memory.
摘要翻译：根据一个实施例，当控制器将第二存储器中的更新数据写入非易失性的第一存储器，并且页面的大小与更新数据的大小之间的差等于或大于集群的大小时，所述控制器被配置为通过向所述更新数据添加具有所述集群的大小的数据来存储与所述更新数据相对应的管理信息的更新内容和指示所述更新内容的存储位置的更新内容存储位置来生成写入数据的第一存储器中的管理信息，并将生成的写入数据写入到第一存储器的写入块中。

54. 发明授权

US08664716B2 Semiconductor device, method of manufacturing the same and power-supply device using the same 失效
标题翻译：半导体装置及其制造方法以及使用其的电源装置
公开(公告)号：US08664716B2
公开(公告)日：2014-03-04
申请号：US12818485
申请日：2010-06-18
申请人： Takayuki Hashimoto , Takashi Hirao , Noboru Akiyama
发明人： Takayuki Hashimoto , Takashi Hirao , Noboru Akiyama
IPC分类号： H01L27/06
CPC分类号： H01L29/7802 , H01L21/26586 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/405 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/41775 , H01L29/4933 , H01L29/66727 , H01L29/7803 , H02M3/1588 , Y02B70/1466
摘要： In a lateral-type power MOSFET, high breakdown voltage is achieved with suppressing to increase a cell pitch, and a feedback capacity and an ON resistance are decreased. An n− type silicon region having a high resistance to be a region of maintaining a breakdown voltage is vertically provided with respect to a main surface of an n+ type silicon substrate, and the n− type silicon region having the high resistance is connected to the n+ type silicon substrate. Also, a conductive substance is filled through an insulating substance inside a trench formed to reach the n+ type silicon substrate from the main surface of the n+ type silicon substrate so as to contact with the n− type silicon region having the high resistance, and the conductive substance is electrically connected to a source electrode.
摘要翻译：在横向型功率MOSFET中，通过抑制增加电池间距而实现高的击穿电压，并且降低反馈容量和导通电阻。相对于n +型硅衬底的主表面垂直地设置具有高电阻的n型硅区域作为保持击穿电压的区域，并且具有高电阻的n型硅区域连接到 n +型硅衬底。此外，导电物质通过绝缘物质填充在形成为从n +型硅衬底的主表面到达n +型硅衬底的沟槽内，以便与具有高电阻的n型硅区接触，并且导电物质电连接到源电极。

55. 发明授权

US07704694B2 Method for detecting target plant genus 有权
标题翻译：检测目标植物属的方法
公开(公告)号：US07704694B2
公开(公告)日：2010-04-27
申请号：US12139701
申请日：2008-06-16
申请人： Takashi Hirao , Masayuki Hiramoto
发明人： Takashi Hirao , Masayuki Hiramoto
IPC分类号： C12Q1/68 , C12P19/34
CPC分类号： C12Q1/6895
摘要： A method for detecting species in a target plant genus comprises the steps of conducting PCR using at least one member selected from the group consisting of primers (A) and (B), which can hybridize under stringent conditions to a nucleic acid molecule having a common nucleotide sequence for all species in the target plant genus in 45S rRNA precursor gene sequence thereof, wherein 3′ end of primer (A) can complementarily bind to a base in ITS-1 sequence of the target plant genus when the primer hybridizes to the nucleic acid molecule while 3′ end of primer (B) can complementarily bind to a base in ITS-2 sequence of the target plant genus when the primer hybridizes to the nucleic acid molecule, and identifying the presence of the resulting amplification product from PCR containing at least a part of ITS-1 or ITS-2 sequence of the target plant genusThe method for detecting species in a target plant genus, particularly an allergenic plant genus such as the genus Fagopyrum, can make it possible to detect with high sensitivity, for example, about 1 ppm of the plant(s) in cases where the plant(s) is contained in a food ingredient or food product.
摘要翻译：一种用于检测目标植物属物种的方法，包括以下步骤：使用选自引物（A）和（B）中的至少一种成员进行PCR，其可在严格条件下与具有共同的核酸分子杂交在45S rRNA前体基因序列中的目标植物属中的所有物种的核苷酸序列，其中引物（A）的3'末端可以在引物与核酸杂交时与靶植物属的ITS-1序列中的碱基互补结合酸分子，而当引物与核酸分子杂交时，引物（B）的3'末端可以与靶植物属的ITS-2序列中的碱基互补结合，并且从PCR中鉴定所得扩增产物的存在，目标植物属的ITS-1或ITS-2序列的至少一部分目标植物属，特别是过敏原植物属如禾本科属的物种的检测方法可以使其可能以高灵敏度检测，例如在植物包含在食品成分或食品中的情况下，约1ppm的植物。

56. 发明申请

US20100001790A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20100001790A1
公开(公告)日：2010-01-07
申请号：US12483668
申请日：2009-06-12
申请人： Takayuki HASHIMOTO , Takashi Hirao , Noboru Akiyama
发明人： Takayuki HASHIMOTO , Takashi Hirao , Noboru Akiyama
IPC分类号： H01L25/00
CPC分类号： H01L27/0629 , H01L2924/0002 , H02M7/003 , H01L2924/00
摘要： In a semiconductor device, a high-side driver is arranged in a region closer to a periphery of a semiconductor substrate than a high-side switch, and a low-side driver is arranged in a region closer to the periphery of the semiconductor substrate than the low-side switch. By this means, a path from a positive terminal of an input capacitor to a negative terminal of the input capacitor via the high-side switch and the low-side switch is short, a path from a positive terminal of a drive capacitor to a negative terminal of the drive capacitor via the low-side driver is short, and a path from a positive terminal of a boot strap capacitor to a negative terminal of the boot strap capacitor via the high-side driver is short, and therefore, the parasitic inductance can be reduced, and the conversion efficiency can be improved.
摘要翻译：在半导体装置中，高侧驱动器配置在比高侧开关更靠近半导体基板的周围的区域，低边驱动器配置在比半导体基板的周边更靠近的区域，低端开关。通过这种方式，经由高侧开关和低侧开关从输入电容器的正极端子到输入电容器的负极端子的路径很短，从驱动电容器的正极端子到负极的路径通过低侧驱动器的驱动电容器的端子短，通过高侧驱动器从引导电容器的正极端子到引导电容器的负极端子的路径短，因此，寄生电感可以降低转换效率。

57. 发明授权

US07598520B2 Semiconductor device including active layer of zinc oxide with controlled crystal lattice spacing and manufacturing method thereof 失效
标题翻译：包括具有受控晶格间距的氧化锌的有源层的半导体器件及其制造方法
公开(公告)号：US07598520B2
公开(公告)日：2009-10-06
申请号：US11809858
申请日：2007-06-01
申请人： Takashi Hirao , Takahiro Hiramatsu , Mamoru Furuta , Hiroshi Furuta , Tokiyoshi Matsuda
发明人： Takashi Hirao , Takahiro Hiramatsu , Mamoru Furuta , Hiroshi Furuta , Tokiyoshi Matsuda
IPC分类号： H01L29/12 , H01L31/0256 , H01L27/15 , H01L23/62
CPC分类号： H01L29/7869 , H01L29/04 , H01L29/045 , H01L29/78618
摘要： A semiconductor device includes an oxide semiconductor thin film layer of zinc oxide. The (002) lattice planes of at least a part of the oxide semiconductor thin film layer have a preferred orientation along a direction perpendicular to a substrate of the semiconductor device and a lattice spacing d002 of at least 2.619 Å.
摘要翻译：半导体器件包括氧化锌的氧化物半导体薄膜层。氧化物半导体薄膜层的至少一部分的（002）晶格面沿着与半导体器件的衬底垂直的方向具有优选的取向，晶格间距d002至少为2.619A。

58. 发明申请

US20090140327A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090140327A1
公开(公告)日：2009-06-04
申请号：US12326392
申请日：2008-12-02
申请人： Takashi Hirao , Takayuki Hashimoto , Noboru Akiyama
发明人： Takashi Hirao , Takayuki Hashimoto , Noboru Akiyama
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41741 , H01L29/42368 , H01L29/66727 , H01L29/66734 , H01L29/7813
摘要： The vertical trench MOSFET comprises: an N type epitaxial region formed on an upper surface of an N+ type substrate having a drain electrode on a lower surface thereof; a gate trench extending from a front surface into the N type epitaxial region; a gate electrode positioned in the gate trench so as to interpose an insulator; a channel region formed on the N type epitaxial region; a source region formed on the channel region; a source electrode formed on the source region; a source trench extending from the front surface into the N type epitaxial region; and a trench-buried source electrode positioned in the source trench so as to interpose an insulator, wherein the source electrode contacts with the trench-buried source electrode.
摘要翻译：垂直沟槽MOSFET包括：形成在其下表面上具有漏电极的N +型衬底的上表面上的N型外延区域; 栅极沟槽，其从前表面延伸到N型外延区域; 位于所述栅极沟槽中以便插入绝缘体的栅电极; 形成在N型外延区上的沟道区; 形成在沟道区上的源极区; 形成在源极区上的源电极; 源极沟槽，其从前表面延伸到N型外延区域; 以及位于所述源极沟槽中以便插入绝缘体的沟槽埋入式源电极，其中所述源电极与所述沟槽埋入式源极接触。

59. 发明申请

US20090033377A1 Drive Circuit and Inverter for Voltage Driving Type Semiconductor Device 有权
标题翻译：用于电压驱动型半导体器件的驱动电路和逆变器
公开(公告)号：US20090033377A1
公开(公告)日：2009-02-05
申请号：US12170472
申请日：2008-07-10
申请人： Takayuki Hashimoto , Takashi Hirao , Masaki Shiraishi
发明人： Takayuki Hashimoto , Takashi Hirao , Masaki Shiraishi
IPC分类号： H03K3/012
CPC分类号： H02M3/07 , H02M1/08 , H02M7/5387 , H02M2003/071
摘要： A drive circuit for driving a semiconductor element is equipped with: a first switch connected to a positive side of a DC power supply; a second switch connected to the other terminal of the first switch and to a negative side of the DC power supply; a third switch connected to the positive side of the DC power supply; a fourth switch connected to the other terminal of the third switch; a fifth switch connected to the other terminal of the fourth switch and to the negative side of the DC power supply; and a capacitor connected to the other terminal of the first switch and to the other terminal of the fourth switch. A gate of the semiconductor element is connected to the other terminal of said third switch; and a source of the semiconductor element is connected to the negative side of the DC power supply.
摘要翻译：用于驱动半导体元件的驱动电路配备有：连接到直流电源的正侧的第一开关; 连接到第一开关的另一个端子和直流电源的负极的第二开关; 连接到直流电源的正极的第三开关; 连接到第三开关的另一个端子的第四开关; 连接到第四开关的另一个端子和直流电源的负极的第五开关; 以及电容器，连接到第一开关的另一端子和第四开关的另一端子。半导体元件的栅极连接到所述第三开关的另一个端子; 并且半导体元件的源极连接到直流电源的负极侧。

60. 发明授权

US07402391B2 Method for detecting target plant genus 有权
标题翻译：检测目标植物属的方法
公开(公告)号：US07402391B2
公开(公告)日：2008-07-22
申请号：US11581872
申请日：2006-10-17
申请人： Takashi Hirao , Masayuki Hiramoto
发明人： Takashi Hirao , Masayuki Hiramoto
IPC分类号： C12Q1/68 , C12P19/34
CPC分类号： C12Q1/6895
摘要： A method for detecting species in a target plant genus comprises the steps of conducting PCR using at least one member selected from the group consisting of primers (A) and (B), which can hybridize under stringent conditions to a nucleic acid molecule having a common nucleotide sequence for all species in the target plant genus in 45S rRNA precursor gene sequence thereof, wherein 3′ end of primer (A) can complementarily bind to a base in ITS-1 sequence of the target plant genus when the primer hybridizes to the nucleic acid molecule while 3′ end of primer (B) can complementarily bind to a base in ITS-2 sequence of the target plant genus when the primer hybridizes to the nucleic acid molecule, and identifying the presence of the resulting amplification product from PCR containing at least a part of ITS-1 or ITS-2 sequence of the target plant genus.The method for detecting species in a target plant genus, particularly an allergenic plant genus such as the genus Fagopyrum, can make it possible to detect with high sensitivity, for example, about 1 ppm of the plant(s) in cases where the plant(s) is contained in a food ingredient or food product.
摘要翻译：一种用于检测目标植物属物种的方法，包括以下步骤：使用选自引物（A）和（B）中的至少一种成员进行PCR，其可在严格条件下与具有共同的核酸分子杂交在45S rRNA前体基因序列中的目标植物属中的所有物种的核苷酸序列，其中引物（A）的3'末端可以在引物与核酸杂交时与靶植物属的ITS-1序列中的碱基互补结合酸分子，而当引物与核酸分子杂交时，引物（B）的3'末端可以与靶植物属的ITS-2序列中的碱基互补结合，并且从PCR中鉴定所得扩增产物的存在，目标植物属的ITS-1或ITS-2序列的至少一部分。用于检测目标植物属，特别是变应原植物属（如禾本科）的物种的方法可以使得可以以高灵敏度检测例如约1ppm的植物（例如植物（ s）包含在食品成分或食品中。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式