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51. 发明申请

US20100062566A1 Method of manufacturing stack-type semiconductor device and method of manufacturing stack-type electronic component 有权
公开(公告)号：US20100062566A1
公开(公告)日：2010-03-11
申请号：US12585547
申请日：2009-09-17
申请人： Atsushi Yoshimura , Tadanobu Ookubo
发明人： Atsushi Yoshimura , Tadanobu Ookubo
IPC分类号： H01L21/50
CPC分类号： H01L21/6835 , H01L21/6836 , H01L21/78 , H01L24/27 , H01L24/29 , H01L24/73 , H01L24/83 , H01L25/03 , H01L25/0657 , H01L25/50 , H01L2221/68327 , H01L2221/6839 , H01L2224/274 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83191 , H01L2224/83855 , H01L2224/83856 , H01L2225/0651 , H01L2924/01005 , H01L2924/01006 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/10253 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19106 , H01L2924/19107 , H01L2924/00014 , H01L2924/00 , H01L2924/3512 , H01L2924/00012
摘要： A first semiconductor element is bonded on a substrate. A complex film formed of integrated dicing film and adhesive film is affixed on a rear surface of a semiconductor wafer which is to be second semiconductor elements, the dicing film having a thickness within a range of not less than 50 μm nor more than 140 μm and a room temperature elastic modulus within a range of not less than 30 MPa nor more than 120 MPa, and the adhesive film having a thickness of 30 μm or more and a room temperature elastic modulus before curing within a range of not less than 500 MPa nor more than 1200 MPa. The semiconductor wafer together with the adhesive film is divided into the second semiconductor elements. The second semiconductor element is picked up from the dicing film to be bonded on the first semiconductor element.

52. 发明申请

US20070218586A1 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20070218586A1
公开(公告)日：2007-09-20
申请号：US11715961
申请日：2007-03-09
申请人： Atsushi Yoshimura , Tadanobu Okubo , Shigetaka Onishi
发明人： Atsushi Yoshimura , Tadanobu Okubo , Shigetaka Onishi
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , B28D5/022 , H01L21/67132 , H01L21/6835 , H01L24/27 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L25/0657 , H01L2224/274 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83191 , H01L2224/8385 , H01L2224/85 , H01L2225/0651 , H01L2225/06575 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/15311 , H01L2924/15788 , H01L2924/181 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/2075 , H01L2924/20751 , H01L2924/20752
摘要： An adhesive layer of which thickness is over 25 μm and a dicing tape are laminated on a rear surface of a semiconductor wafer. The semiconductor wafer is cut together with a part of the adhesive layer by using a first blade of which cutting depth reaches the adhesive layer. The adhesive layer is cut together with a part of the dicing tape by using a second blade of which cutting depth reaches the dicing tape and of which width is narrower than the first blade. A semiconductor element sectioned by cutting the semiconductor wafer with the adhesive layer is picked up from the dicing tape, and is adhered on another semiconductor element or a circuit board.
摘要翻译：厚度超过25μm的粘合剂层和切割带层压在半导体晶片的后表面上。通过使用切割深度到达粘合剂层的第一刀片将半导体晶片与粘合剂层的一部分一起切割。通过使用切割深度到达切割带并且宽度比第一刀片窄的第二刀片将粘合剂层与切割带的一部分一起切割。通过用粘合剂层切割半导体晶片而切割的半导体元件从切割带拾取，并且粘附在另一个半导体元件或电路板上。

53. 发明申请

US20070196952A1 Manufacturing method of semiconductor device 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：US20070196952A1
公开(公告)日：2007-08-23
申请号：US11651561
申请日：2007-01-10
申请人： Atsushi Yoshimura , Tadanobu Okubo , Yasuo Tane
发明人： Atsushi Yoshimura , Tadanobu Okubo , Yasuo Tane
IPC分类号： H01L21/00
CPC分类号： H01L21/6838 , H01L23/3128 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L2224/16 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83191 , H01L2224/8385 , H01L2224/92247 , H01L2225/0651 , H01L2225/06575 , H01L2225/06586 , H01L2225/06593 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/10253 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A substrate having an element mounting portion is placed on a suction stage having a suction hole. The suction hole is provided so as to suck a region excluding the element mounting portion of the substrate. Otherwise, the suction hole has a hole size of not less than 0.5 mm nor more than 1.0 mm. A fist semiconduct or substrate is sucked with a suction rubber collet with Shore A hardness of not less than 50 nor more than 70. The first semiconductor element is bonded to the element mounting portion of the substrate. A second semiconductor element having an adhesive layer with a remaining volatile content of 0.5% or less is disposed on the first semiconductor substrate. The adhesive layer is heated to a temperature in a range of not less than 120° C. nor more than 150° C. and bonded.
摘要翻译：具有元件安装部的基板被放置在具有吸入孔的抽吸台上。吸引孔设置成吸引除基板的元件安装部以外的区域。否则，吸孔的孔径不小于0.5mm，不大于1.0mm。第一半导体或基板被吸入具有不低于50且不大于70的肖氏A硬度的吸力橡胶夹头。第一半导体元件结合到基板的元件安装部分。具有0.5％以下剩余挥发物含量的粘合剂层的第二半导体元件设置在第一半导体衬底上。将粘合剂层加热至不低于120℃并且不超过150℃的温度。

54. 发明申请

US20070120248A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20070120248A1
公开(公告)日：2007-05-31
申请号：US11602323
申请日：2006-11-21
申请人： Atsushi Yoshimura , Yoshiaki Sugizaki
发明人： Atsushi Yoshimura , Yoshiaki Sugizaki
IPC分类号： H01L23/04
CPC分类号： H01L25/0657 , H01L23/49827 , H01L23/49833 , H01L2224/16 , H01L2225/06517 , H01L2225/0652 , H01L2225/06551 , H01L2225/06572 , H01L2225/06586 , H05K1/0269 , H05K3/4015 , H05K3/4046 , H05K3/462 , H05K3/4638 , H05K2201/097 , H05K2201/09918 , H05K2203/0126 , H05K2203/049 , H05K2203/166
摘要： There is disclosed a semiconductor device comprising at least two substrates, at least one wiring being provided in each of the substrates, the substrates being stacked such that major surfaces on one side of each thereof oppose each other and the wirings being connected between the major surfaces, and a plurality of connecting portions being provided adjacent to each other while connected to each wiring on the major surfaces opposing each other, at least one of the connecting portions provided on the same major surface being formed smaller than the adjacent other connecting portion, the connecting portions being provided at positions opposing each other one to one on the major surface, the connecting portions being connected so that the wirings are connected between the major surfaces, one connecting portion of a pair of the connecting portions connected one to one being formed smaller than the other connecting portion.
摘要翻译：公开了包括至少两个基板的半导体器件，在每个基板中设置至少一个布线，所述基板被堆叠，使得它们的一侧的主表面彼此相对，并且布线连接在主表面之间并且多个连接部分彼此相邻设置，同时连接到彼此相对的主表面上的每个布线，设置在相同主表面上的至少一个连接部分形成为小于相邻的另一个连接部分，连接部分设置在主表面上彼此相对的位置处，连接部分连接成使得布线连接在主表面之间，一对连接的一对连接部分的一个连接部分形成较小比另一个连接部分。

55. 发明授权

US06501007B1 Method of dwarfing plants 失效
标题翻译：矮化植物的方法
公开(公告)号：US06501007B1
公开(公告)日：2002-12-31
申请号：US09335586
申请日：1999-06-18
申请人： Motoyuki Ashikari , Atsushi Yoshimura , Masahiro Yano , Takashi Matsumoto , Takuji Sasaki , Jianzhong Wu , Kimiko Yamamoto
发明人： Motoyuki Ashikari , Atsushi Yoshimura , Masahiro Yano , Takashi Matsumoto , Takuji Sasaki , Jianzhong Wu , Kimiko Yamamoto
IPC分类号： C12N1509
CPC分类号： C12N15/8261 , C07K14/415 , Y02A40/146
摘要： A method of dwarfing plants comprises controlling the expression of the genes involved in the dwarfism of the plants is provided. A molecule to be utilized for dwarfing plants is also provided. A single gene that causes the d1 mutation, which results in the dwarf abnormality of rice, was identified and isolated from a vast chromosomal region by the map-based cloning technique. This method enables, for example, creating ornamental plants and agricultural products with new commercial values, and therefore is useful especially in the areas of agriculture and horticulture.
摘要翻译：矮化植物的方法包括控制涉及植物侏儒症的基因的表达。还提供了用于矮化植物的分子。通过基于地图的克隆技术，从广泛的染色体区域鉴定并分离导致导致水稻矮化异常的d1突变的单一基因。该方法例如可以创造具有新商业价值的观赏植物和农产品，因此尤其在农业和园艺领域尤其有用。

56. 发明授权

US5467803A Outer lead bending apparatus for a semiconductor package device having a package and outer leads extending from the package 失效
标题翻译：一种用于半导体封装器件的外引线弯曲装置，其具有从封装延伸的封装和外引线
公开(公告)号：US5467803A
公开(公告)日：1995-11-21
申请号：US194506
申请日：1994-02-09
申请人： Atsushi Yoshimura , Hiroshi Shibata , Fumio Takahashi , Kuniaki Tsurushima
发明人： Atsushi Yoshimura , Hiroshi Shibata , Fumio Takahashi , Kuniaki Tsurushima
IPC分类号： B21D5/01 , B21F1/00 , H01L21/48 , H01L23/50 , H05K13/00
CPC分类号： H05K13/0092 , H01L21/4842
摘要： An outer lead bending apparatus comprises a fixed unit, a movable unit movable toward and away from the fixed unit, a first die detachably mounted on one of the fixed unit and movable unit and holding a semiconductor package devise in place, and a second die detachably mounted on the other unit and, when the movable unit is driven toward the fixed unit, bending, together with the first die, the outer leads of the semiconductor package devise into a given configuration.
摘要翻译：外引线弯曲装置包括固定单元，可朝向和远离固定单元移动的可移动单元，可拆卸地安装在固定单元和可移动单元中的一个上并将半导体封装设置在适当位置的第一模具和可拆卸地安装的第二模具安装在另一单元上，并且当可移动单元朝向固定单元被驱动时，与第一模具一起弯曲半导体封装的外引线设计成给定的构造。

57. 发明授权

US08783207B2 Meter pointer device 有权
标题翻译：仪表指针装置
公开(公告)号：US08783207B2
公开(公告)日：2014-07-22
申请号：US13064305
申请日：2011-03-17
申请人： Haruyoshi Ono , Atsushi Yoshimura
发明人： Haruyoshi Ono , Atsushi Yoshimura
IPC分类号： G01D13/26 , G01D11/28
CPC分类号： B60K37/02 , B60K2350/1064 , B60K2350/408 , G01D13/22
摘要： An electric wire for connecting a rotating base plate 18 and a main substrate 10 is composed of an FPC 13. The FPC is connected to the main substrate 10 in a manner that a width direction of the FPC 13 is perpendicular to the main substrate 10. A protecting member 14 is provided on the main substrate 10 for surrounding a moving range of the FPC 13 on the main substrate 10 associated with a rotation of a meter pointer 12.
摘要翻译：用于连接旋转基板18和主基板10的电线由FPC 13构成。FPC以与FPC 13的宽度方向垂直于主基板10的方式与主基板10连接。保护构件14设置在主基板10上，用于围绕与仪表指针12的旋转相关联的主基板10上的FPC 13的移动范围。

58. 发明授权

US08513088B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08513088B2
公开(公告)日：2013-08-20
申请号：US13233203
申请日：2011-09-15
申请人： Atsushi Yoshimura , Fumihiro Iwami
发明人： Atsushi Yoshimura , Fumihiro Iwami
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , H01L24/743 , H01L2224/743 , H01L2924/10158 , H01L2924/00
摘要： In one embodiment, an adhesive layer is formed by applying a liquid adhesive to a semiconductor wafer whose wafer shape is maintained by a surface protective film attached to a first surface. A supporting sheet having a tacky layer is attached to a second surface of the semiconductor wafer. After the surface protective film is peeled, the supporting sheet is expanded to cleave the adhesive layer including the adhesive filled into the dicing grooves. The first surface of the semiconductor wafer is cleaned while an expansion state of the supporting sheet is maintained. Tack strength of portions corresponding to the dicing grooves of the tacky layer is selectively reduced before cleaning.
摘要翻译：在一个实施方案中，通过将液体粘合剂施加到晶片形状由附接到第一表面的表面保护膜保持的半导体晶片形成粘合剂层。具有粘性层的支撑片附接到半导体晶片的第二表面。在剥离表面保护膜之后，使支撑片膨胀以将包括填充到切割槽中的粘合剂的粘合剂层切开。在保持支撑片的膨胀状态的同时清洁半导体晶片的第一表面。在清洁之前选择性地减少与粘性层的切割槽对应的部分的粘合强度。

59. 发明申请

US20120326339A1 SEMICONDUCTOR DEVICE, AND METHOD AND APPARATUS FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法和装置
公开(公告)号：US20120326339A1
公开(公告)日：2012-12-27
申请号：US13421126
申请日：2012-03-15
申请人： Nobuhito SUZUYA , Atsushi Yoshimura , Hideko Mukaida
发明人： Nobuhito SUZUYA , Atsushi Yoshimura , Hideko Mukaida
IPC分类号： H01L21/56 , H01L23/28
CPC分类号： H01L23/3121 , H01L21/565 , H01L23/295 , H01L23/3171 , H01L25/0657 , H01L2224/48145 , H01L2224/48227 , H01L2225/06506 , H01L2225/0651 , H01L2225/06562 , H01L2924/00012
摘要： According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The method includes: stacking and adhering a second semiconductor chip on a first semiconductor chip via an adhesive layer; adjusting at least one of an elasticity modulus of the adhesive layer, a sink amount of the adhesive layer, a thickness of a protective film at a surface of the first chip, and an elasticity modulus of the protective film such that “y” in a following formula is 70 or less; and sealing the chips by a molding resin with filler particles. y=74.7−82.7a1+273.2a2−9882a3+65.8a4 a1: a logarithm of the modulus of elasticity [MPa] of the adhesive layer a2: the sink amount [mm] of the adhesive layer a3: the thickness [mm] of the protective film a4: a logarithm of the modulus of elasticity [MPa] of the protective film
摘要翻译：根据一个实施例，公开了一种半导体器件的制造方法。该方法包括：通过粘合剂层将第二半导体芯片堆叠并粘附在第一半导体芯片上; 调整粘合剂层的弹性模量，粘合剂层的下沉量，第一芯片的表面处的保护膜的厚度和保护膜的弹性模量中的至少一个，使得下式中的y 是70以下; 并通过具有填料颗粒的模制树脂密封碎屑。 y = 74.7-82.7a1 + 273.2a2-9882a3 + 65.8a4 a1：粘合剂层的弹性模量[MPa]的对数a2：粘合剂层的吸收量[mm] a3：厚度[mm] 保护膜a4是保护膜的弹性模量[MPa]的对数

60. 发明授权

US08302889B2 Fuel injection valve 有权
标题翻译：燃油喷射阀
公开(公告)号：US08302889B2
公开(公告)日：2012-11-06
申请号：US13177137
申请日：2011-07-06
申请人： Naoya Hashii , Keishi Nakano , Tsuyoshi Munezane , Atsushi Yoshimura , Manabu Miyaki
发明人： Naoya Hashii , Keishi Nakano , Tsuyoshi Munezane , Atsushi Yoshimura , Manabu Miyaki
IPC分类号： B05B1/00
CPC分类号： F02M61/1853 , F02M51/0682 , F02M2200/8084 , Y10S239/90
摘要： A fuel injection valve has a valve body for opening and closing a valve seat, and receives an operation signal from a control unit to operate the valve body so that fuel is injected from a plurality of injection holes formed in an injection hole plate welded through a welded portion to a downstream side of the valve seat while passing through a gap between the valve body and the valve seat. The injection hole plate is formed at its central portion with a convex portion which is substantially axisymmetric with respect to a valve seat axis and which has a circular-arc shaped cross section, and the welded portion is also substantially axisymmetric with respect to the valve seat axis. Inlet portions of the injection holes are disposed in an injection hole arrangement surface diametrically outside of the convex portion and diametrically inside of a valve seat opening inner wall which is a minimum inside diameter of the valve seat, and the injection hole arrangement surface is coplanar with a surface having the welded portion.
摘要翻译：燃料喷射阀具有用于打开和关闭阀座的阀体，并接收来自控制单元的操作信号以操作阀体，使得燃料从形成在喷射孔板中的多个喷射孔喷射，该喷射孔通过在通过阀体和阀座之间的间隙的同时，将其焊接到阀座的下游侧。喷孔板在其中央部形成有相对于阀座轴线大致轴对称且具有圆弧形截面的凸部，焊接部也相对于阀座大致轴对称轴。喷射孔的入口部分直径位于凸起部分的外侧的喷孔配置表面中，并且直径位于阀座开口内壁的内侧，阀座开口内壁是阀座的最小内径，并且喷射孔配置表面与具有焊接部的表面。

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