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    • 53. 发明授权
    • Manufacturing method of semiconductor device
    • 半导体器件的制造方法
    • US07742150B2
    • 2010-06-22
    • US11654566
    • 2007-01-18
    • Shinichi ItoKentaro MatsunagaDaisuke Kawamura
    • Shinichi ItoKentaro MatsunagaDaisuke Kawamura
    • G03B27/32
    • G03D3/08G03B27/42G03F7/70341
    • A manufacturing method of a semiconductor device including a liquid immersion movement exposure of interposing a liquid between an exposure target substrate and a projection optical system of an exposure apparatus, and carrying out an exposure processing with respect to a plurality of exposure regions set on a surface of the substrate while relatively moving the substrate with respect to the system, a first liquid immersion movement of relatively moving the substrate with respect to the system while interposing the liquid between the substrate and the system, in adjacent exposure regions of said each exposure region, and a second liquid immersion movement of relatively moving the substrate with respect to the system at a speed lower than a movement speed in the first movement, while interposing the liquid between the substrate and the system, in a distance that is longer than a movement distance in the first movement.
    • 一种半导体器件的制造方法,包括在曝光对象基板和曝光装置的投影光学系统之间插入液体的液浸式移动曝光,并对相对于设置在表面上的多个曝光区域进行曝光处理 在相对于所述系统相对移动所述衬底的同时,在所述每个曝光区域的相邻曝光区域中相对于所述衬底相对地移动所述衬底同时在所述衬底和所述系统之间插入液体的第一液浸动作, 以及第二液浸移动,其以比第一移动中的移动速度低的速度相对于所述系统移动所述基板,同时在所述基板和所述系统之间以比移动距离长的距离 在第一动作。
    • 55. 发明授权
    • Method of manufacturing semiconductor device and liquid immersion lithography system
    • 制造半导体器件和液浸光刻系统的方法
    • US07630053B2
    • 2009-12-08
    • US11727498
    • 2007-03-27
    • Daisuke Kawamura
    • Daisuke Kawamura
    • G03B27/52G03B27/42
    • G03F7/70916G03F7/70341G03F7/70866
    • A method of manufacturing a semiconductor device is disclosed. The manufacturing method includes the following steps in a period from a liquid immersion lithography step to a step in which a film structure of at least an edge of a wafer changes from a timing of the liquid immersion lithography step. At least one of a side surface of an edge of the wafer and an upper surface of the edge of the wafer is inspected. On the basis of an inspection result, at least one of the presence/absence of film peeling and the presence/absence of particle adhesion is determined on at least one of the side surface of the edge of the wafer and the upper surface of the edge of the wafer. A predetermined coping process is performed when it is determined that at least one of the film peeling and the particle adhesion has occurred.
    • 公开了制造半导体器件的方法。 该制造方法包括以下步骤:从液浸光刻步骤到至少晶片边缘的膜结构从液浸光刻步骤的定时变化的步骤。 检查晶片的边缘的侧表面和晶片的边缘的上表面中的至少一个。 基于检查结果,在晶片边缘的侧表面和边缘的上表面中的至少一个上确定膜剥离的存在/不存在和颗粒附着的存在/不存在中的至少一个 的晶片。 当确定膜剥离和颗粒粘附中的至少一种已经发生时,执行预定的应对过程。
    • 60. 发明授权
    • Method for manufacturing exposure mask, exposure apparatus and semiconductor device
    • 曝光掩模,曝光装置和半导体装置的制造方法
    • US06558853B1
    • 2003-05-06
    • US09661553
    • 2000-09-14
    • Daisuke Kawamura
    • Daisuke Kawamura
    • G03F900
    • G03F1/36G03F7/70433
    • An exposure mask is used for transcribing a desired pattern on a resist on a wafer in a photolithography step. This exposure mask is formed by the arrangement of transcribed pattern film formed in a desired pattern on the transparent substrate. In order to decrease background light, a dummy pattern film formed in a dummy pattern is arranged on the transparent substrate together with the transcribed pattern film. The dummy pattern is designed in such a manner that the dummy pattern is not transcribed on the resist under the exposure condition required for transcribing the desired pattern on the resist in a desired size. Besides, the dummy pattern film is arranged from the transcribed pattern film in a predetermined distance so that the intensity distribution of light which passes through the transcribed pattern film.
    • 曝光掩模用于在光刻步骤中在晶片上的抗蚀剂上转录所需图案。 该曝光掩模由在透明基板上以期望图案形成的转录图案膜的排列形成。 为了减少背景光,以虚拟图案形成的虚拟图案膜与转印图案膜一起布置在透明基板上。 虚拟图案被设计成使得在用于以希望的尺寸转印抗蚀剂上的期望图案所需的曝光条件下,在抗蚀剂上不转印哑图案。 此外,虚设图案膜从转录图案膜以预定距离布置,使得通过转录图案膜的光的强度分布。