专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US08992376B2 Power transmission device 有权
标题翻译：动力传动装置
公开(公告)号：US08992376B2
公开(公告)日：2015-03-31
申请号：US13580561
申请日：2010-02-22
申请人： Hiroyuki Ogawa , Akira Murakami , Daisuke Tomomatsu , Takahiro Shiina
发明人： Hiroyuki Ogawa , Akira Murakami , Daisuke Tomomatsu , Takahiro Shiina
IPC分类号： F16H15/52
CPC分类号： F16H15/52
摘要： A power transmission device includes first and second rings arranged opposite each other, having a common rotation center axis, and rotatable relative to each other; a plurality of planetary balls having rotation center axes parallel to the rotation center axis, and radially arranged between the first and second rings and around the rotation center axis; a transmission control unit configured to change a rotation ratio between the first and second rings by changing the respective contact points of the first and second rings and each of the planetary balls through tilting motion of each of the planetary balls; and a rotation restricting unit disposed between the planetary balls adjacent to each other.
摘要翻译：动力传递装置包括彼此相对布置的第一和第二环，具有共同的旋转中心轴线并且可相对于彼此旋转; 多个行星球，其旋转中心轴与旋转中心轴平行，并且径向配置在第一和第二环之间并且围绕旋转中心轴线; 变速器控制单元，其被配置为通过通过每个所述行星球的倾斜运动来改变所述第一和第二环和每个所述行星球的各个接触点来改变所述第一和第二环之间的旋转比; 以及设置在彼此相邻的行星球之间的旋转限制单元。

52. 发明授权

US08956262B2 Continuously variable transmission 有权
标题翻译：连续可变传动
公开(公告)号：US08956262B2
公开(公告)日：2015-02-17
申请号：US13574083
申请日：2011-09-22
申请人： Daisuke Tomomatsu , Akira Murakami , Hiroyuki Ogawa , Yuki Aratsu
发明人： Daisuke Tomomatsu , Akira Murakami , Hiroyuki Ogawa , Yuki Aratsu
IPC分类号： F16H15/52 , F16H15/40
CPC分类号： F16H15/40 , F16H15/52
摘要： A continuously variable transmission includes plural planetary balls, a carrier, a sun roller, an input shaft, an output shaft, and thrust bearings sandwiched between respective holding surfaces of the input shaft and the output shaft, wherein the holding surface at a time of rest is formed such that a space between the holding surface and a race on one side of the thrust bearing becomes wider on an outside in a radial direction than on an inside in the radial direction, and the holding surface at the time of rest is formed such that a space between the holding surface and a race on the other side of the thrust bearing becomes wider on the outside in the radial direction than on the inside in the radial direction.
摘要翻译：无级变速器包括夹在输入轴和输出轴的各个保持表面之间的多个行星球，行星架，太阳辊，输入轴，输出轴和止推轴承，其中在休息时的保持表面形成为使得保持面与推力轴承一侧的座圈之间的空间在径向的外侧比在径向的内侧上的宽度宽，并且在休息时的保持面形成为保持面与推力轴承另一侧的座圈之间的空间在径向的外侧比径向的内侧宽。

53. 发明授权

US08914179B2 Power transmission device 有权
标题翻译：动力传动装置
公开(公告)号：US08914179B2
公开(公告)日：2014-12-16
申请号：US14007082
申请日：2012-03-27
申请人： Eiji Tsuchiya , Takao Watanabe , Shu Asami , Tatsuya Miyano , Akira Murakami , Hiroyuki Ogawa , Tomoyuki Toyama
发明人： Eiji Tsuchiya , Takao Watanabe , Shu Asami , Tatsuya Miyano , Akira Murakami , Hiroyuki Ogawa , Tomoyuki Toyama
IPC分类号： B60K6/00 , H02P25/22 , B60K6/30 , B60K6/448 , B60W30/192 , F02N5/04 , F02N11/08 , F02N15/02 , H02K16/02 , B60K6/26 , B60W30/18 , H02K21/24 , H02K7/112 , H02K17/24
CPC分类号： H02P25/22 , B60K6/30 , B60K6/448 , B60K2006/262 , B60K2006/266 , B60L11/123 , B60L11/14 , B60W30/18054 , B60W30/192 , F02N5/04 , F02N11/08 , F02N15/02 , F02N2300/2002 , H02K7/112 , H02K16/02 , H02K17/24 , H02K21/24 , Y02T10/6217 , Y02T10/6243 , Y02T10/641 , Y02T10/7077 , Y02T10/7258
摘要： During an inertial energy storage operation, electric power conversion at an inverter is controlled such that a direct current electric power from an electric power storage device is converted into an alternating current by the inverter so as to be supplied to stator windings, such that torque in the direction of engine rotation is applied to an output side rotor from a stator to rotatively drive the output side rotor in a state where power transmission from the output side rotor to a drive axle is stopped. During a cranking operation after the inertial energy storage operation, the electric power conversion at an inverter is controlled to permit application of the alternating current to rotor windings, such that a torque in the direction of engine rotation is applied to an input side rotor from the output side rotor, thereby rotatively driving an input side rotor to crank the engine.
摘要翻译：在惯性能量存储操作期间，控制逆变器的电力转换，使得来自蓄电装置的直流电力由逆变器转换为交流电，以供给定子绕组，使得转矩在从输出侧转子到驱动轴的动力传递停止的状态下，发动机旋转的方向从定子施加到输出侧转子，以可变地驱动输出侧转子。在惯性能量存储操作之后的起动操作期间，控制逆变器的电力转换，以允许将交流电施加到转子绕组，使得发动机转动方向上的转矩从输入侧转子施加到输出侧转子，由此旋转地驱动输入侧转子来使发动机起动。

54. 发明申请

US20140235401A1 CONTINUOUSLY VARIABLE TRANSMISSION 有权
标题翻译：连续可变传输
公开(公告)号：US20140235401A1
公开(公告)日：2014-08-21
申请号：US13574083
申请日：2011-09-22
申请人： Daisuke Tomomatsu , Akira Murakami , Hiroyuki Ogawa , Yuki Aratsu
发明人： Daisuke Tomomatsu , Akira Murakami , Hiroyuki Ogawa , Yuki Aratsu
IPC分类号： F16H15/40
CPC分类号： F16H15/40 , F16H15/52
摘要： A continuously variable transmission includes plural planetary balls, a carrier, a sun roller, an input shaft, an output shaft, and thrust bearings sandwiched between respective holding surfaces of the input shaft and the output shaft, wherein the holding surface at a time of rest is formed such that a space between the holding surface and a race on one side of the thrust bearing becomes wider on an outside in a radial direction than on an inside in the radial direction, and the holding surface at the time of rest is formed such that a space between the holding surface and a race on the other side of the thrust bearing becomes wider on the outside in the radial direction than on the inside in the radial direction.
摘要翻译：无级变速器包括夹在输入轴和输出轴的各个保持表面之间的多个行星球，行星架，太阳辊，输入轴，输出轴和止推轴承，其中在休息时的保持表面形成为使得保持面与推力轴承一侧的座圈之间的空间在径向的外侧比在径向的内侧上的宽度宽，并且在休息时的保持面形成为保持面与推力轴承另一侧的座圈之间的空间在径向的外侧比径向的内侧宽。

55. 发明授权

US08785274B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08785274B2
公开(公告)日：2014-07-22
申请号：US12785964
申请日：2010-05-24
申请人： Katsuyoshi Matsuura , Masayoshi Asano , Hiroyuki Ogawa , Myounggoo Lee
发明人： Katsuyoshi Matsuura , Masayoshi Asano , Hiroyuki Ogawa , Myounggoo Lee
IPC分类号： H01L21/8242
CPC分类号： H01L29/66659 , H01L27/1085 , H01L27/10861 , H01L27/10894 , H01L28/91 , H01L29/105 , H01L29/66537 , H01L29/7835
摘要： A method for manufacturing a semiconductor device includes preparing a semiconductor substrate having a first region of a first electrical conduction type as a part of a surface layer of the semiconductor substrate and a first gate electrode and a capacitor structure, the first gate electrode and the capacitor structure being disposed on the first region; forming a first insulating film covering the first gate electrode and the capacitor structure, the first insulating film being covering the surface of the semiconductor substrate; implanting a first impurity of a second electrical conduction type into the semiconductor substrate, so as to form a region of the second electrical conduction type in each of a second region and a third region, the second region being a region between the first gate electrode and the capacitor structure, the third region being a region opposite to the capacitor structure with the first gate electrode therebetween.
摘要翻译：一种制造半导体器件的方法包括制备具有第一导电类型的第一区域作为半导体衬底的表面层的一部分的半导体衬底和第一栅电极和电容器结构，第一栅电极和电容器结构设置在第一区域上; 形成覆盖所述第一栅电极和所述电容器结构的第一绝缘膜，所述第一绝缘膜覆盖所述半导体基板的表面; 将第二导电类型的第一杂质注入到所述半导体衬底中，以便在第二区域和第三区域中的每一个中形成所述第二导电类型的区域，所述第二区域是所述第一栅电极和电容器结构，第三区域是与电容器结构相反的区域，其间具有第一栅电极。

56. 发明申请

US20140011629A1 CONTINUOUSLY VARIABLE TRANSMISSION 有权
标题翻译：连续可变传输
公开(公告)号：US20140011629A1
公开(公告)日：2014-01-09
申请号：US13394596
申请日：2011-03-29
申请人： Takahiro Shiina , Akira Murakami , Hiroyuki Ogawa , Daisuke Tomomatsu , Yuki Aratsu
发明人： Takahiro Shiina , Akira Murakami , Hiroyuki Ogawa , Daisuke Tomomatsu , Yuki Aratsu
IPC分类号： F16H15/40
CPC分类号： F16H15/40 , F16H15/28
摘要： Provided with first and second rotational members, a sun roller, a plurality of planetary balls sandwiched between the first and second rotational members, a support shaft of each of the planetary balls, a shaft, a carrier, an iris plate and a worm gear for tilting each of the planetary balls, and an input shaft and an output shaft individually fixed to the first and second rotational members, respectively, in which a movable amount of the sun roller relative to the carrier in an axis line direction is set to be smaller than the movable amount of the second rotational member relative to the carrier in the axis line direction when the input shaft is arranged so as to be relatively rotatable on an outer peripheral surface of the output shaft.
摘要翻译：设置有第一和第二旋转构件，太阳辊，夹在第一和第二旋转构件之间的多个行星球，每个行星球的支撑轴，轴，载体，光圈板和蜗轮，倾斜每个行星球，以及分别固定到第一和第二旋转构件的输入轴和输出轴，其中太阳滚轴相对于载体在轴线方向上的可移动量设定为较小当输入轴布置成在输出轴的外周表面上可相对旋转时，第二旋转构件相对于托架的可移动量沿轴线方向。

57. 发明授权

US08518795B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08518795B2
公开(公告)日：2013-08-27
申请号：US13455633
申请日：2012-04-25
申请人： Jusuke Ogura , Hikaru Kokura , Hideyuki Kojima , Toru Anezaki , Hiroyuki Ogawa , Junichi Ariyoshi
发明人： Jusuke Ogura , Hikaru Kokura , Hideyuki Kojima , Toru Anezaki , Hiroyuki Ogawa , Junichi Ariyoshi
IPC分类号： H01L21/76
CPC分类号： H01L21/76224 , H01L21/823481 , H01L27/1052 , H01L27/11521
摘要： A method of manufacturing a semiconductor device includes forming an isolation region defining an active region in a semiconductor substrate, forming a first insulating film over the semiconductor substrate, forming a second insulating film having etching properties different from those of the first insulating film over the first insulating film, selectively removing the second insulating film from a first region over the active region and the isolation region by dry etching using a fluorocarbon-based etching gas, removing a residual film formed by the dry etching over the first insulating film by exposure in an atmosphere containing oxygen, and selectively removing the first insulating film from the first region by wet etching.
摘要翻译：制造半导体器件的方法包括在半导体衬底中形成限定有源区的隔离区，在半导体衬底上形成第一绝缘膜，形成第二绝缘膜，该第二绝缘膜具有与第一绝缘膜相同的蚀刻性能绝缘膜，通过使用基于碳氟化合物的蚀刻气体的干蚀刻从有源区域和隔离区域上的第一区域选择性地去除第二绝缘膜，通过在第一绝缘膜上暴露于第一绝缘膜上形成的残留膜含氧的气氛，通过湿式蚀刻从第一区域选择性地除去第一绝缘膜。

58. 发明授权

US08404761B2 White ink for inkjet 有权
标题翻译：用于喷墨的白色墨水
公开(公告)号：US08404761B2
公开(公告)日：2013-03-26
申请号：US12654818
申请日：2010-01-05
申请人： Masami Shinozaki , Hiroyuki Ogawa
发明人： Masami Shinozaki , Hiroyuki Ogawa
IPC分类号： B41J2/01 , B41J2/17 , B41J2/175 , B60C1/00 , C08K3/22 , C08K3/34 , C09D5/00 , C09D11/00 , G01D11/00
CPC分类号： C09D11/38 , C09D11/322
摘要： A white ink for an inkjet, comprising a silica, a resin emulsion, and water, wherein an amount of the resin emulsion, reported as a mass ratio relative to a value of 1 for the silica, is within a range from 0.10 to 0.45.
摘要翻译：一种用于喷墨的白色油墨，包括二氧化硅，树脂乳液和水，其中相对于二氧化硅以质量比1表示的质量比的树脂乳液的量在0.10至0.45的范围内。

59. 发明授权

US08351247B2 Semiconductor device including memory cell having capacitor 有权
标题翻译：包括具有电容器的存储单元的半导体器件
公开(公告)号：US08351247B2
公开(公告)日：2013-01-08
申请号：US12707044
申请日：2010-02-17
申请人： Hiroyuki Ogawa , Hiroyoshi Tomita , Masato Takita
发明人： Hiroyuki Ogawa , Hiroyoshi Tomita , Masato Takita
IPC分类号： G11C11/24
CPC分类号： H01L27/0207 , G11C5/063 , G11C7/02 , G11C7/18 , G11C11/4097 , H01L27/1085 , H01L27/10885 , H01L27/10897
摘要： A semiconductor device includes a semiconductor substrate; a memory cell array including a plurality of memory cells formed on the semiconductor substrate and arranged in a matrix in a first direction and a second direction on the surface of the semiconductor substrate; a plurality of sense amplifiers formed on the semiconductor substrate and including a first sense amplifier and a second sense amplifier; and a plurality of bit lines extending along the first direction above the memory cell array, and arranged side by side in the second direction, wherein the plurality of bit lines include a first bit line pair formed in a first wiring layer and a second bit line pair formed in a second wiring layer located above the first wiring layer.
摘要翻译：半导体器件包括半导体衬底; 存储单元阵列，包括形成在所述半导体衬底上并在所述半导体衬底的表面上沿第一方向和第二方向布置成矩阵的多个存储单元; 多个读出放大器，形成在半导体衬底上并包括第一读出放大器和第二读出放大器; 以及沿着存储单元阵列上方的第一方向延伸并沿第二方向并排布置的多个位线，其中多个位线包括形成在第一布线层中的第一位线对和第二位线形成在位于第一布线层上方的第二布线层中。

60. 发明授权

US08350310B2 Semiconductor device including memory cell having capacitor 有权
公开(公告)号：US08350310B2
公开(公告)日：2013-01-08
申请号：US13473242
申请日：2012-05-16
申请人： Hiroyuki Ogawa , Hiroyoshi Tomita , Masato Takita
发明人： Hiroyuki Ogawa , Hiroyoshi Tomita , Masato Takita
IPC分类号： H01L27/108
CPC分类号： H01L27/0207 , G11C5/063 , G11C7/02 , G11C7/18 , G11C11/4097 , H01L27/1085 , H01L27/10885 , H01L27/10897
摘要： A semiconductor device includes a semiconductor substrate; a memory cell array including a plurality of memory cells formed on the semiconductor substrate and arranged in a matrix in a first direction and a second direction on the surface of the semiconductor substrate; a plurality of sense amplifiers formed on the semiconductor substrate and including a first sense amplifier and a second sense amplifier; and a plurality of bit lines extending along the first direction above the memory cell array, and arranged side by side in the second direction, wherein the plurality of bit lines include a first bit line pair formed in a first wiring layer and a second bit line pair formed in a second wiring layer located above the first wiring layer.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式