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    • 54. 发明申请
    • IMAGE PROCESSING APPARATUS AND METHOD, RECORDING MEDIUM, AND PROGRAM
    • 图像处理设备和方法,记录介质和程序
    • US20090067744A1
    • 2009-03-12
    • US12264500
    • 2008-11-04
    • Isao KAWANISHIMiyuki OkadaNobuyuki SatoKen Nakajima
    • Isao KAWANISHIMiyuki OkadaNobuyuki SatoKen Nakajima
    • G06K9/40
    • H04N5/243H04N5/217H04N5/23296H04N9/646
    • For each pixel read from an imaging device, a horizontal counter value and a vertical counter value corresponding to the pixel are supplied from a signal generator to a distance computation section via an optical-axis-center coordinate setting section and an up-and-down and right-and-left weighting section. In the distance computation section, the distance to the optical-axis center is computed, and correction coefficients for the zoom wide end and for the zoom tele end, which correspond to the distance, are obtained by look-up tables. The two obtained correction coefficients are blended at a mixture ratio determined by a blend ratio setting section. The blended shading correction coefficients are gain adjusted by a gain adjustment section, after which they are supplied to a correction section. As a result, a correction corresponding to the distance to the optical-axis-center position is performed on the signal of each pixel supplied from an imaging section.
    • 对于从成像装置读取的每个像素,将与像素相对应的水平计数器值和垂直计数器值经由光轴中心坐标设定部和上下方向从信号发生器供给到距离计算部 和右,右加权部分。 在距离计算部分中,计算到光轴中心的距离,并且通过查找表获得与距离对应的变焦宽端和变焦远端的校正系数。 将两个获得的校正系数以由混合比设置部确定的混合比混合。 混合阴影校正系数是通过增益调整部分调整的增益,之后将它们提供给校正部分。 结果,对从摄像部提供的每个像素的信号执行与光轴中心位置的距离相对应的校正。
    • 57. 发明授权
    • Semiconductor device and method of fabricating the same
    • 半导体装置及其制造方法
    • US07019361B2
    • 2006-03-28
    • US11037158
    • 2005-01-19
    • Kazuya NakayamaBungo TanakaNobuyuki Sato
    • Kazuya NakayamaBungo TanakaNobuyuki Sato
    • H01L29/76
    • H01L29/7816H01L29/0696H01L29/1045H01L29/4175H01L29/7835H01L2924/0002H01L2924/00
    • A semiconductor device comprises a semiconductor substrate, a semiconductor layer formed above the semiconductor substrate, a plurality of unit cells each having a structure with a gate electrode disposed and formed above the semiconductor layer to have a stripe-like shape and with a source layer and a drain layer formed in the semiconductor layer to have stripe-like shapes respectively, a gate wiring line for mutually connecting together respective gate electrodes of the unit cells, a first main electrode being formed on a dielectric film covering the gate electrodes and the gate wiring line and being in contact with any one of the source layer and the drain layer of each unit cell, an impurity diffusion layer formed in the semiconductor layer to a depth reaching the semiconductor substrate only at part immediately underlying the gate wiring line, the part being selected from part immediately underlying a remaining one of the source layer and the drain layer of each unit cell and part immediately underlying the gate wiring line, the impurity diffusion layer being for permitting extension of the remaining one of the source and drain layers of each unit cell up to the semiconductor substrate, and a second main electrode as formed at a back surface of the semiconductor substrate.
    • 半导体器件包括半导体衬底,形成在半导体衬底上的半导体层,多个单元电池,每个单元电池具有设置并形成在半导体层上方的具有栅极电极的结构以具有条状形状并具有源极层和 形成在所述半导体层中的具有条状形状的漏极层,用于将所述单元电池的各个栅电极相互连接在一起的栅极布线;形成在覆盖所述栅电极的电介质膜上的第一主电极和所述栅极布线 并与每个单元电池的源极层和漏极层中的任何一个接触;在半导体层中仅形成在栅极布线的正下方的部分的深度到达半导体基板的深度的杂质扩散层,该部分是 从每个单位单元和部分的源层和漏层中的剩余部分的下方的部分中选择 在栅极布线的下方,杂质扩散层用于允许每个单元电池的剩余的一个源极和漏极层延伸到半导体衬底;以及第二主电极,形成在半导体衬底的背面 。