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51. 发明授权

US07582509B2 Micro-embossing fabrication of electronic devices 有权
标题翻译：电子器件的微压花加工
公开(公告)号：US07582509B2
公开(公告)日：2009-09-01
申请号：US11453974
申请日：2006-06-16
申请人： Shunpu Li , Christopher Newsome , David Russell , Thomas Kugler
发明人： Shunpu Li , Christopher Newsome , David Russell , Thomas Kugler
IPC分类号： H01L21/84
CPC分类号： H01L51/0541 , H01L51/0022 , H01L51/0035 , H01L51/0036 , H01L51/052 , H01L51/105 , H01L2251/105
摘要： A method of forming an electronic device on a substrate 10, comprising: embossing the substrate 10, surface treating the substrate so that unindented portions 11 repel a solution of a first material 60, and depositing a solution of the first material 60 in indentations 12 on the substrate 10 formed by the embossing. The substrate is then annealed so that level of the first material is the same as the surface of the substrate. The first material 60 in the indentations can then, for example, be used as the source and drain in the subsequent formation of a TFT.
摘要翻译：一种在基板10上形成电子器件的方法，包括：对基片10进行压花处理，对基片进行表面处理，使得未凹陷部分11排斥第一材料60的溶液，并将第一材料60的溶液沉积在压痕12中通过压花形成的基板10。然后将衬底退火，使得第一材料的水平与衬底的表面相同。然后，凹陷中的第一材料60可以例如在随后的TFT形成中用作源极和漏极。

52. 发明授权

US07517719B2 Method for fabricating a semiconductor element from a dispersion of semiconductor particles 有权
标题翻译：从半导体粒子的分散体制造半导体元件的方法
公开(公告)号：US07517719B2
公开(公告)日：2009-04-14
申请号：US11125138
申请日：2005-05-10
申请人： Thomas Kugler , Christopher Newsome , David Russel , Shunpu Li
发明人： Thomas Kugler , Christopher Newsome , David Russel , Shunpu Li
IPC分类号： H01L51/40
CPC分类号： H01L21/02568 , H01L21/0256 , H01L21/02576 , H01L21/02579 , H01L21/02601 , H01L21/02628 , H01L51/0003 , H01L51/0037 , H01L51/0053 , H01L51/007 , H01L51/0545
摘要： Provided is a method for forming a semiconductor element such as film. The method comprises the steps of: (i) depositing a suspension of particles of a first semiconductor and a solution of a second semiconductor or a precursor thereof on a surface of a substrate such that a mixture comprising the particles of the first semiconductor suspended in a liquid phase comprising the second semiconductor or precursor thereof results thereon; and (ii) solidifying the mixture to form the semiconductor element comprising particles of the first semiconductor in a matrix of the second semiconductor which electrically connects adjacent particles of the first semiconductor, the first and second semiconductors being of the same conductivity type and being formed from either the same or different materials. The method does not require any step of vacuum deposition or sintering.Also provided is a semiconductor element itself. The element comprises semiconductor particles in a matrix of a semiconductor binder that has the same conductivity type as the semiconductor particles and which is the same or a different material than that forming the particles, the semiconductor binder electrically connecting adjacent semiconductor particles.
摘要翻译：提供了一种形成诸如膜的半导体元件的方法。该方法包括以下步骤：（i）将第一半导体和第二半导体或其前体的溶液的悬浮液沉积在基板的表面上，使得包含悬浮在基板中的第一半导体颗粒的混合物在其上产生包含第二半导体或其前体的液相; 和（ii）固化所述混合物以形成所述半导体元件，所述半导体元件包括所述第二半导体的矩阵中的所述第一半导体的粒子，所述第二半导体的矩阵电连接所述第一半导体的相邻颗粒，所述第一和第二半导体具有相同的导电类型，并且由相同或不同的材料。该方法不需要真空沉积或烧结的任何步骤。还提供了半导体元件本身。该元件包括半导体粘合剂的基质中的半导体颗粒，其具有与半导体颗粒相同的导电类型，并且与形成颗粒的材料相同或不同，所述半导体粘结剂将相邻的半导体颗粒电连接。

53. 发明申请

US20090090907A1 Electrochemical device 审中-公开
标题翻译：电化学装置
公开(公告)号：US20090090907A1
公开(公告)日：2009-04-09
申请号：US12314216
申请日：2008-12-05
申请人： Thomas Kugler , Magnus Berggren , Tommi Remonen , Anna Ingalill Malmstrom , Bjorn Knuthammar , Petronella Norberg
发明人： Thomas Kugler , Magnus Berggren , Tommi Remonen , Anna Ingalill Malmstrom , Bjorn Knuthammar , Petronella Norberg
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0508 , G06K19/027 , H01L51/0037 , H01L51/0512 , H01Q1/22 , H01Q1/2225
摘要： An electrochemical device is provided, comprising a source contact connected to a first antenna pad, a drain contact connected to a second antenna pad, at least one gate electrode, an electrochemically active element arranged between, and in direct electrical contact with, the source and drain contacts, which electrochemically active element comprises a transistor channel and is of a material comprising an organic material having the ability of electrochemically altering its conductivity through change of redox state thereof, and a solidified electrolyte in direct electrical contact with the electrochemically active element and the at least one gate electrode and interposed between them in such a way that electron flow between the electrochemically active element and the gate electrode(s) is prevented. In the device, flow of electrons between source contact and drain contact is controllable by means of a voltage applied to the gate electrode(s).
摘要翻译：提供了一种电化学装置，其包括连接到第一天线焊盘的源极触点，连接到第二天线焊盘的漏极触点，至少一个栅极电极，布置在源极和与源极直接电接触的电化学活性元件;以及漏极触点，其电化学活性元件包括晶体管沟道，并且是包括具有通过其氧化还原状态的电化学改变其导电性的能力的有机材料的材料，以及与电化学活性元件直接电接触的固化电解质，至少一个栅电极并且插入在它们之间，使得电化学活性元件和栅电极之间的电子流被阻止。在器件中，源极接触和漏极接触之间的电子流可以通过施加到栅电极的电压来控制。

54. 发明申请

US20090042346A1 Electrolyte pattern and method for manufacturing an electrolyte pattern 有权
标题翻译：电解质图案和制造电解质图案的方法
公开(公告)号：US20090042346A1
公开(公告)日：2009-02-12
申请号：US12155708
申请日：2008-06-09
申请人： Thomas Kugler
发明人： Thomas Kugler
IPC分类号： H01L21/8234
CPC分类号： H01L51/0529 , G02F1/153 , H01L29/4908 , H01L29/78681 , H01L29/7869 , H01L51/055 , H01L51/0558 , H01M2300/0022 , H01M2300/0085
摘要： A method for manufacturing a gel electrolyte pattern is disclosed, the method comprising depositing an electrolyte precursor by inkjet printing onto a gelling agent layer. A gel electrolyte pattern is also disclosed, the gel electrolyte pattern comprising either a mixture of a gelling agent and an electrolyte precursor or the products of a chemical reaction between a gelling agent and an electrolyte precursor.
摘要翻译：公开了一种制造凝胶电解质图案的方法，该方法包括通过喷墨印刷将电解质前体沉积在胶凝剂层上。还公开了凝胶电解质图案，凝胶电解质图案包括胶凝剂和电解质前体的混合物或胶凝剂和电解质前体之间的化学反应的产物。

55. 发明授权

US07468329B2 Dedoping of organic semiconductors 有权
标题翻译：有机半导体的掺杂
公开(公告)号：US07468329B2
公开(公告)日：2008-12-23
申请号：US11350725
申请日：2006-02-10
申请人： David Russell , Thomas Kugler , Christopher Newsome , Shunpu Li
发明人： David Russell , Thomas Kugler , Christopher Newsome , Shunpu Li
IPC分类号： H01L21/469 , H01L23/58
CPC分类号： C08G73/026 , C08G61/10 , C08G61/126 , C08G2261/312
摘要： The present invention relates to a method of dedoping an organic semiconductor comprising the step of contacting a doped organic semiconductor with a compound of formula (1): wherein R1-R8 each independently represents a hydrogen atom or a C1-C6 alkyl group which may be linear or branched and which may be optionally substituted with one or more hydroxyl groups and/or one or more halogen atoms and/or a C1-C3 alkoxy group; one or more pairs of R groups which are not hydrogen may join to form a cyclic group according to the following pairings: R1 and R2; R2 and R3; R3 and R4; R4 and R5; R5 and R6; R6 and R7; R7 and R8; and R8 and R1.
摘要翻译：本发明涉及一种去掺杂有机半导体的方法，包括使掺杂的有机半导体与式（1）化合物接触的步骤：其中R 1 -R 8各自独立地表示氢原子或可以是其可任选被一个或多个羟基和/或一个或多个卤素原子和/或C 1 -C 3烷氧基取代; 一对或多对不是氢的R基团可以根据以下配对连接形成环状基团：R1和R2; R2和R3; R3和R4; R4和R5; R5和R6; R6和R7; R7和R8; 和R8和R1。

56. 发明授权

US07439193B2 Patterning method for fabricating high resolution structures 失效
标题翻译：用于制造高分辨率结构的图案化方法
公开(公告)号：US07439193B2
公开(公告)日：2008-10-21
申请号：US11320582
申请日：2005-12-30
申请人： Shunpu Li , Christopher Newsome , David Russell , Thomas Kugler
发明人： Shunpu Li , Christopher Newsome , David Russell , Thomas Kugler
IPC分类号： H01L21/00
CPC分类号： H01L21/0338 , H01L21/0272 , H01L21/0331 , H01L21/0337 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L27/1292 , H01L27/285 , H01L51/0021 , H01L51/0036 , H01L51/0516 , H01L51/0541 , H01L51/105
摘要： Provided is a patterning method capable of fabricating high resolution structures without using a high resolution patterning step. The method comprises the steps of: (i) pre-patterning a layer of material (12) on a substrate (10), (ii) spin-coating a solution of a film-forming substance over the pre-patterned substrate, (iii) drying the spin-coated solution to form a film (14) of the film-forming substance on the unpatterned areas of the substrate and on the surface and sides of the pre-patterned material, (iv) etching the dried film in such a way that it remains only around the sides of the pre-patterned material, and (v) removing the pre-patterned material to leave ridges (20) of the film-forming substance on the substrate, the pattern of the ridges corresponding to the outline of the pre-patterned material.A metal layer may then be deposited on the resulting patterned substrate followed by removal of the ridges leaving discrete areas of metal which form latent source and drain electrodes of a thin film transistor. An array of thin film transistors may then be formed by selectively depositing areas of semiconductor, insulator and conductor, the latter forming a gate electrode associated with each pair of source and drain electrodes.
摘要翻译：提供了一种能够在不使用高分辨率图案化步骤的情况下制造高分辨率结构的图案化方法。该方法包括以下步骤：（i）在衬底（10）上预先图案化材料层（12），（ii）在预图案化衬底上旋涂成膜物质的溶液，（iii））干燥旋转涂覆的溶液以在基底的未图案区域和预图案化材料的表面和侧面上形成成膜物质的膜（14），（iv）将这样的干燥膜蚀刻它仅保留在预图案化材料的侧面周围，并且（v）去除预先图案化的材料以将成膜物质的脊（20）留在衬底上，对应于轮廓的脊的图案的预图案材料。然后可以在所得到的图案化衬底上沉积金属层，然后去除留下形成薄膜晶体管的潜在源极和漏极的离散的金属区域的脊。然后可以通过选择性地沉积半导体，绝缘体和导体的区域来形成薄膜晶体管阵列，后者形成与每对源极和漏极电极相关联的栅电极。

57. 发明申请

US20080135883A1 Circuitry and method 有权
标题翻译：电路和方法
公开(公告)号：US20080135883A1
公开(公告)日：2008-06-12
申请号：US11980359
申请日：2007-10-31
申请人： Marten Armgarth , Miaioxiang M. Chen , David A. Nilsson , Rolf M. Berggren , Thomas Kugler , Tommi M. Remonen , Robert Forchheimer
发明人： Marten Armgarth , Miaioxiang M. Chen , David A. Nilsson , Rolf M. Berggren , Thomas Kugler , Tommi M. Remonen , Robert Forchheimer
IPC分类号： H01L27/10
CPC分类号： H01L51/0508 , B82Y10/00 , C09K9/02 , G02F1/163 , G02F2001/1635 , G02F2202/022 , G11C13/0009 , G11C13/0014 , G11C13/0016 , G11C2213/15 , H01L21/31604 , H01L27/283 , H01L28/56 , H01L51/0037 , H01L51/0097 , H01L51/052 , H01L2924/0002 , H01L2924/00
摘要： A circuitry for differential amplifying, logical inversion, NAND and/or NOR operations is provided, which includes at least one depletion mode transistor having JFET characteristics. A method for determining the properties of an electrochemical circuitry is provided, including at least one semi-finished transistor, by applying a solidified electrolyte to selected sets of electrochemically active transistor elements is also provided.
摘要翻译：提供了用于差分放大，逻辑反相，NAND和/或NOR运算的电路，其包括至少一个具有JFET特性的耗尽型晶体管。还提供了一种用于确定电化学电路的性质的方法，包括至少一个半成品晶体管，通过将凝固的电解质施加到选定的电化学活性晶体管元件组。

58. 发明申请

US20080128687A1 Electrochemical device and methods for producing the same 有权
标题翻译：电化学装置及其制造方法
公开(公告)号：US20080128687A1
公开(公告)日：2008-06-05
申请号：US11980633
申请日：2007-10-31
申请人： Marten Armgarth , Miaioxiang M. Chen , David A. Nilsson , Rolf M. Berggren , Thomas Kugler , Tommi M. Remonen , Robert Forchheimer
发明人： Marten Armgarth , Miaioxiang M. Chen , David A. Nilsson , Rolf M. Berggren , Thomas Kugler , Tommi M. Remonen , Robert Forchheimer
IPC分类号： H01L51/05 , H01L51/40
CPC分类号： H01L51/0508 , B82Y10/00 , C09K9/02 , G02F1/163 , G02F2001/1635 , G02F2202/022 , G11C13/0009 , G11C13/0014 , G11C13/0016 , G11C2213/15 , H01L21/31604 , H01L27/283 , H01L28/56 , H01L51/0037 , H01L51/0097 , H01L51/052 , H01L2924/0002 , H01L2924/00
摘要： Methods of producing electrochemical transistor devices are provided, wherein a solidified electrolyte is arranged in direct contact with at least a portion of an organic material having the ability to electrochemically altering its electrical conductivity through change of redox state thereof, such that a current between a source contact and a drain contact of the transistor is controllable by way of a voltage applied to a gate electrode. A electrochemical transistor device is also provided, wherein an ion isolative material is provided between a solidified electrolyte and an organic material having ability to electrochemically altering its redox state, such that a transistor channel of the transistor is defined thereby.
摘要翻译：提供了生产电化学晶体管器件的方法，其中固化的电解质被布置成与至少一部分有机材料直接接触，所述有机材料具有通过其氧化还原状态的改变而电化学地改变其导电性的能力，使得源晶体管的接触和漏极接触可以通过施加到栅电极的电压来控制。还提供一种电化学晶体管器件，其中在凝固的电解质和具有电化学改变其氧化还原状态的能力的有机材料之间提供离子隔离材料，从而限定晶体管的晶体管沟道。

59. 发明申请

US20080035915A1 Semiconductor film comprising discrete domains of an organic semiconductor and a method of its fabrication 有权
标题翻译：包括有机半导体的离散畴的半导体膜及其制造方法
公开(公告)号：US20080035915A1
公开(公告)日：2008-02-14
申请号：US11517449
申请日：2006-09-08
申请人： David Russell , Thomas Kugler , Christopher Newsome , Shunpu Ll
发明人： David Russell , Thomas Kugler , Christopher Newsome , Shunpu Ll
IPC分类号： H01L51/30 , H01L51/40
CPC分类号： H01L51/0012 , H01L51/0004 , H01L51/0036 , H01L51/0053 , H01L51/0545 , H01L51/0566
摘要： According to a first aspect, the present invention provides a method for forming a semiconductor film comprising a first step of providing a solution comprising a first organic semiconductor and a second organic semiconductor on a surface of a substrate. The solution is then dried to form the semiconductor film so that it comprises discrete domains of the first organic semiconductor in a matrix of the second organic semiconductor which electrically connects adjacent domains of the first organic semiconductor. The first and second semiconductors are of the same conductivity type. The mobility of charge carriers in the domains of the first organic semiconductor is higher than the mobility of charge carriers in the matrix of the second organic semiconductor. In alternative aspects, the present invention provides methods forming similar semiconductor film products but in which a solution of the first organic semiconductor is deposited separately from the second organic semiconductor and dried to form discrete domains. The present invention also provides a semiconductor film such as produced by the above methods in which both the first and second organic semiconductors are thiophenes.
摘要翻译：根据第一方面，本发明提供了一种形成半导体膜的方法，其包括在衬底的表面上提供包含第一有机半导体和第二有机半导体的溶液的第一步骤。然后将溶液干燥以形成半导体膜，使得其包含第一有机半导体的第一有机半导体的相邻区域中的第二有机半导体的矩阵中的离散区域。第一和第二半导体具有相同的导电类型。第一有机半导体的区域中的载流子的迁移率高于第二有机半导体的基体中的电荷载流子的迁移率。在替代方案中，本发明提供了形成类似的半导体膜产品的方法，但是其中第一有机半导体的溶液与第二有机半导体分开沉积并干燥以形成离散的畴。本发明还提供了通过上述方法制备的半导体膜，其中第一和第二有机半导体都是噻吩。

60. 发明授权

US07271098B2 Method of fabricating a desired pattern of electronically functional material 有权
标题翻译：制造电子功能材料所需图案的方法
公开(公告)号：US07271098B2
公开(公告)日：2007-09-18
申请号：US11102711
申请日：2005-04-11
申请人： Shunpu Li , Christopher Newsome , Thomas Kugler , David Russell
发明人： Shunpu Li , Christopher Newsome , Thomas Kugler , David Russell
IPC分类号： H01L21/302
CPC分类号： H01L51/0023 , H01L51/0022 , H01L51/0037 , H01L51/0541
摘要： Provided is a method forming a desired pattern of electronically functional material 3 on a substrate 1. The method comprises the steps of: creating a first layer of patterning material 2 on the substrate whilst leaving areas of the substrate exposed to define said desired pattern; printing a suspension comprising particles of the electronically functional material 3 in a liquid dispersant, to which the patterning material is impervious, on the patterning material and the exposed substrate; removing at least some of the liquid dispersant from the suspension to consolidate the particles; and applying a first solvent to said consolidated particles which is capable of solubilizing the patterning material 2 and to which the consolidated particles are pervious so that the patterning material is removed from the substrate 1 together with any overlying electronically functional material 3.
摘要翻译：提供了在基板1上形成电子功能材料3的期望图案的方法。该方法包括以下步骤：在衬底上创建图案材料材料2的第一层，同时使衬底的区域暴露以限定所述期望图案; 将包含电子功能材料3的颗粒的悬浮液印刷在图案形成材料和暴露的基底上的图案形成材料不可渗透的液体分散剂中; 从悬浮液中除去至少一些液体分散剂以固结颗粒; 以及将第一溶剂施加到能够溶解图案形成材料2并且固结的颗粒可渗透的所述固结颗粒，使得图案材料与任何上覆的电子功能材料3一起从基板1移除。

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