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1. 发明授权

US07579620B2 Field-effect transistor comprising a layer of an organic semiconductor 有权
标题翻译：场效应晶体管，包括有机半导体层
公开(公告)号：US07579620B2
公开(公告)日：2009-08-25
申请号：US11217410
申请日：2005-09-02
申请人： David Russel , Christopher Newsome , Thomas Kugler , Shunpu Li
发明人： David Russel , Christopher Newsome , Thomas Kugler , Shunpu Li
IPC分类号： H01L29/08
CPC分类号： H01L51/0545 , H01L51/0019 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0541 , H01L51/105
摘要： Provided is a field-effect transistor (10) which comprises a metal or carbon source electrode (14) and a layer of a functional organic semiconductor (28). A column of an injection material (48) extends through the layer of the functional organic semiconductor (28), the column being in contact with both the source electrode (14) and the layer of the functional organic semiconductor (28). This column (48) facilitates the transfer charge carriers between the source electrode (14) and semiconductor layer (28).The injection material is preferably an organic compound such as 3-hexylthiophene, polyarylamine, poly(3,4-ethylenedioxythiophene)-polystyrenesulphonic acid or polyaniline.
摘要翻译：提供一种场效应晶体管（10），其包括金属或碳源电极（14）和功能性有机半导体（28）层。注入材料（48）的柱延伸穿过功能性有机半导体（28）的层，该柱与源电极（14）和功能性有机半导体（28）的层接触。该列（48）便于在源电极（14）和半导体层（28）之间传输电荷载流子。注射剂优选为3-己基噻吩，聚芳基胺，聚（3,4-亚乙基二氧噻吩） - 聚苯乙烯磺酸或聚苯胺等有机化合物。

2. 发明申请

US20060014365A1 Method for fabricating a semiconductor element from a dispersion of semiconductor particles 有权
公开(公告)号：US20060014365A1
公开(公告)日：2006-01-19
申请号：US11125138
申请日：2005-05-10
申请人： Thomas Kugler , Christopher Newsome , David Russel , Shunpu Li
发明人： Thomas Kugler , Christopher Newsome , David Russel , Shunpu Li
IPC分类号： H01L21/20 , H01L21/36 , H01L33/00
CPC分类号： H01L21/02568 , H01L21/0256 , H01L21/02576 , H01L21/02579 , H01L21/02601 , H01L21/02628 , H01L51/0003 , H01L51/0037 , H01L51/0053 , H01L51/007 , H01L51/0545
摘要： Provided is a method for forming a semiconductor element such as film. The method comprises the steps of: (i) depositing a suspension of particles of a first semiconductor and a solution of a second semiconductor or a precursor thereof on a surface of a substrate such that a mixture comprising the particles of the first semiconductor suspended in a liquid phase comprising the second semiconductor or precursor thereof results thereon; and (ii) solidifying the mixture to form the semiconductor element comprising particles of the first semiconductor in a matrix of the second semiconductor which electrically connects adjacent particles of the first semiconductor, the first and second semiconductors being of the same conductivity type and being formed from either the same or different materials. The method does not require any step of vacuum deposition or sintering. Also provided is a semiconductor element itself. The element comprises semiconductor particles in a matrix of a semiconductor binder that has the same conductivity type as the semiconductor particles and which is the same or a different material than that forming the particles, the semiconductor binder electrically connecting adjacent semiconductor particles.

3. 发明授权

US07517719B2 Method for fabricating a semiconductor element from a dispersion of semiconductor particles 有权
标题翻译：从半导体粒子的分散体制造半导体元件的方法
公开(公告)号：US07517719B2
公开(公告)日：2009-04-14
申请号：US11125138
申请日：2005-05-10
申请人： Thomas Kugler , Christopher Newsome , David Russel , Shunpu Li
发明人： Thomas Kugler , Christopher Newsome , David Russel , Shunpu Li
IPC分类号： H01L51/40
CPC分类号： H01L21/02568 , H01L21/0256 , H01L21/02576 , H01L21/02579 , H01L21/02601 , H01L21/02628 , H01L51/0003 , H01L51/0037 , H01L51/0053 , H01L51/007 , H01L51/0545
摘要： Provided is a method for forming a semiconductor element such as film. The method comprises the steps of: (i) depositing a suspension of particles of a first semiconductor and a solution of a second semiconductor or a precursor thereof on a surface of a substrate such that a mixture comprising the particles of the first semiconductor suspended in a liquid phase comprising the second semiconductor or precursor thereof results thereon; and (ii) solidifying the mixture to form the semiconductor element comprising particles of the first semiconductor in a matrix of the second semiconductor which electrically connects adjacent particles of the first semiconductor, the first and second semiconductors being of the same conductivity type and being formed from either the same or different materials. The method does not require any step of vacuum deposition or sintering.Also provided is a semiconductor element itself. The element comprises semiconductor particles in a matrix of a semiconductor binder that has the same conductivity type as the semiconductor particles and which is the same or a different material than that forming the particles, the semiconductor binder electrically connecting adjacent semiconductor particles.
摘要翻译：提供了一种形成诸如膜的半导体元件的方法。该方法包括以下步骤：（i）将第一半导体和第二半导体或其前体的溶液的悬浮液沉积在基板的表面上，使得包含悬浮在基板中的第一半导体颗粒的混合物在其上产生包含第二半导体或其前体的液相; 和（ii）固化所述混合物以形成所述半导体元件，所述半导体元件包括所述第二半导体的矩阵中的所述第一半导体的粒子，所述第二半导体的矩阵电连接所述第一半导体的相邻颗粒，所述第一和第二半导体具有相同的导电类型，并且由相同或不同的材料。该方法不需要真空沉积或烧结的任何步骤。还提供了半导体元件本身。该元件包括半导体粘合剂的基质中的半导体颗粒，其具有与半导体颗粒相同的导电类型，并且与形成颗粒的材料相同或不同，所述半导体粘结剂将相邻的半导体颗粒电连接。

4. 发明申请

US20060049398A1 Field-effect transistor comprising a layer of an organic semiconductor 有权
标题翻译：场效应晶体管，包括有机半导体层
公开(公告)号：US20060049398A1
公开(公告)日：2006-03-09
申请号：US11217410
申请日：2005-09-02
申请人： David Russel , Christopher Newsome , Thomas Kugler , Shunpu Li
发明人： David Russel , Christopher Newsome , Thomas Kugler , Shunpu Li
IPC分类号： H01L29/08
CPC分类号： H01L51/0545 , H01L51/0019 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0541 , H01L51/105
摘要： Provided is a field-effect transistor (10) which comprises a metal or carbon source electrode (14) and a layer of a functional organic semiconductor (28). A column of an injection material (48) extends through the layer of the functional organic semiconductor (28), the column being in contact with both the source electrode (14) and the layer of the functional organic semiconductor (28). This column (48) facilitates the transfer charge carriers between the source electrode (14) and semiconductor layer (28). The injection material is preferably an organic compound such as 3-hexylthiophene, polyarylamine, poly(3,4-ethylenedioxythiophene)-polystyrenesulphonic acid or polyaniline.
摘要翻译：提供一种场效应晶体管（10），其包括金属或碳源电极（14）和功能性有机半导体（28）层。注入材料（48）的柱延伸穿过功能性有机半导体（28）的层，该柱与源电极（14）和功能性有机半导体（28）的层接触。该列（48）便于在源电极（14）和半导体层（28）之间传输电荷载流子。注射剂优选为3-己基噻吩，聚芳基胺，聚（3,4-亚乙基二氧噻吩） - 聚苯乙烯磺酸或聚苯胺等有机化合物。

5. 发明申请

US20050250244A1 Method of fabricating a desired pattern of electronically functional material 有权
标题翻译：制造电子功能材料所需图案的方法
公开(公告)号：US20050250244A1
公开(公告)日：2005-11-10
申请号：US11102711
申请日：2005-04-11
申请人： Shunpu Li , Christopher Newsome , Thomas Kugler , David Russel
发明人： Shunpu Li , Christopher Newsome , Thomas Kugler , David Russel
IPC分类号： B41M5/00 , B05D1/26 , B05D3/12 , G03F7/20 , H01L21/28 , H01L21/288 , H01L21/3205 , H01L21/336 , H01L21/84 , H01L29/786 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/40
CPC分类号： H01L51/0023 , H01L51/0022 , H01L51/0037 , H01L51/0541
摘要： Provided is a method forming a desired pattern of electronically functional material 3 on a substrate 1. The method comprises the steps of: creating a first layer of patterning material 2 on the substrate whilst leaving areas of the substrate exposed to define said desired pattern; printing a suspension comprising particles of the electronically functional material 3 in a liquid dispersant, to which the patterning material is impervious, on the patterning material and the exposed substrate; removing at least some of the liquid dispersant from the suspension to consolidate the particles; and applying a first solvent to said consolidated particles which is capable of solubilizing the patterning material 2 and to which the consolidated particles are pervious so that the patterning material is removed from the substrate 1 together with any overlying electronically functional material 3.
摘要翻译：提供了在基板1上形成电子功能材料3的期望图案的方法。该方法包括以下步骤：在衬底上创建图案材料材料2的第一层，同时使衬底的区域暴露以限定所述期望图案; 将包含电子功能材料3的颗粒的悬浮液印刷在图案形成材料和暴露的基底上的图案形成材料不可渗透的液体分散剂中; 从悬浮液中除去至少一些液体分散剂以固结颗粒; 以及将第一溶剂施加到能够溶解图案形成材料2并且固结的颗粒可渗透的所述固结颗粒，使得图案材料与任何上覆的电子功能材料3一起从基板1移除。

6. 发明申请

US20060290021A1 Micro-embossing fabrication of electronic devices 有权
标题翻译：电子器件的微压花加工
公开(公告)号：US20060290021A1
公开(公告)日：2006-12-28
申请号：US11453974
申请日：2006-06-16
申请人： Shunpu Li , Christopher Newsome , David Russell , Thomas Kugler
发明人： Shunpu Li , Christopher Newsome , David Russell , Thomas Kugler
IPC分类号： B29C47/00 , B32B23/08
CPC分类号： H01L51/0541 , H01L51/0022 , H01L51/0035 , H01L51/0036 , H01L51/052 , H01L51/105 , H01L2251/105
摘要： A method of forming an electronic device on a substrate 10, comprising: embossing the substrate 10, surface treating the substrate so that unindented portions 11 repel a solution of a first material 60, and depositing a solution of the first material 60 in indentations 12 on the substrate 10 formed by the embossing. The substrate is then annealed so that level of the first material is the same as the surface of the substrate. The first material 60 in the indentations can then, for example, be used as the source and drain in the subsequent formation of a TFT.
摘要翻译：一种在基板10上形成电子器件的方法，包括：对基片10进行压花处理，对基片进行表面处理，使得未凹陷部分11排斥第一材料60的溶液，并将第一材料60的溶液沉积在压痕12中通过压花形成的基板10。然后将衬底退火，使得第一材料的水平与衬底的表面相同。然后，凹陷中的第一材料60可以例如在随后的TFT形成中被用作源极和漏极。

7. 发明申请

US20060128076A1 Self-aligning patterning method 失效
标题翻译：自对准图案化方法
公开(公告)号：US20060128076A1
公开(公告)日：2006-06-15
申请号：US11253756
申请日：2005-10-20
申请人： Shunpu Li , Thomas Kugler , Christopher Newsome , David Russell
发明人： Shunpu Li , Thomas Kugler , Christopher Newsome , David Russell
IPC分类号： H01L21/461
CPC分类号： H01L51/105 , H01L21/823456 , H01L27/1292 , H01L27/285 , H01L51/0037 , H01L51/0516 , H01L51/0545
摘要： The present invention relates to a self-aligning patterning method which can be used to manufacture a plurality of multi-layer thin film transistors on a substrate. The method comprises firstly forming a patterned mask 20 on the surface of a sacrificial layer 18 which is part of a multi-layer structure 10 which comprises the substrate 12, a conductive layer 14, an insulating layer 16 and the sacrificial layer 18. Unpatterned areas are then etched to remove the corresponding areas of the sacrificial layer, the insulating layer 16 and the conductive layer 14 thereby leaving voids. A layer of dielectric 22 is then deposited over the etched multi-layer structure to at least substantially fill the voids. The deposited dielectric is then etched in order to at least partially expose the sides of the remaining areas 28 of the sacrificial layer. Conductive material 30 is then deposited on the surface of the etched dielectric. Finally, the remaining areas 28 of the sacrificial layer are removed together with any overlying material. The resulting plurality of multi-layer thin film transistors is preferably in the form of an array which may in turn be formed into a display device by coupling each transistor in the array to a light-emitting cell.
摘要翻译：本发明涉及可用于在基板上制造多个多层薄膜晶体管的自对准图案化方法。该方法包括首先在牺牲层18的表面上形成图案化掩模20，牺牲层18是多层结构10的一部分，其包括基底12，导电层14，绝缘层16和牺牲层18.未图案化的区域然后蚀刻以除去牺牲层，绝缘层16和导电层14的相应区域，从而留下空隙。然后将一层电介质22沉积在蚀刻的多层结构上以至少基本上填充空隙。然后蚀刻沉积的电介质以便至少部分地暴露牺牲层的剩余区域28的侧面。然后将导电材料30沉积在蚀刻的电介质的表面上。最后，牺牲层的剩余区域28与任何上覆材料一起被去除。所得到的多个多层薄膜晶体管优选地是阵列的形式，其可以通过将阵列中的每个晶体管耦合到发光单元而依次形成为显示装置。

8. 发明授权

US07851344B2 Method of producing a substrate having areas of different hydrophilicity and/or oleophilicity on the same surface 有权
标题翻译：在相同表面上制备具有不同亲水性和/或亲油性区域的基材的方法
公开(公告)号：US07851344B2
公开(公告)日：2010-12-14
申请号：US11520668
申请日：2006-09-14
申请人： Thomas Kugler , Shunpu Li , Christopher Newsome , David Russell
发明人： Thomas Kugler , Shunpu Li , Christopher Newsome , David Russell
IPC分类号： H01L21/44
CPC分类号： H05K3/125 , B82Y20/00 , B82Y30/00 , H01L51/0004 , H01L51/0012 , H01L51/0097 , H01L2251/105 , H01L2251/5369 , H05K1/0393 , H05K3/1208 , H05K2203/013 , H05K2203/095 , H05K2203/097 , H05K2203/1173 , Y02E10/549 , Y02P70/521
摘要： The present invention relates to flexible substrates having on their surface a wetting contrast. The wetting contrast comprises adjacent areas of different hydrophilicity and/or oleophilicity. The present invention further relates to methods of production of such substrates and to methods of producing microelectronic components wherein electronically functional material is deposited onto said substrates.According to a first aspect of the present invention, a method of producing a flexible substrate having a wetting contrast is provided. The method includes the step of forming a first area comprising an inorganic material on a flexible substrate precursor to form a substrate wherein the inorganic material is at least partially exposed at the substrate surface and the first area constitutes a pattern on the precursor surface.
摘要翻译：本发明涉及在其表面上具有润湿对比度的柔性基底。润湿对比度包括不同亲水性和/或亲油性的相邻区域。本发明还涉及这种基材的制造方法以及生产微电子部件的方法，其中将电子功能材料沉积在所述基材上。根据本发明的第一方面，提供了具有润湿对比度的柔性基板的制造方法。该方法包括在柔性基板前体上形成包含无机材料的第一区域以形成基板的步骤，其中无机材料在基板表面处至少部分地暴露，并且第一区域在前体表面上构成图案。

9. 发明授权

US07468287B2 Method of fabricating a heterojunction of organic semiconducting polymers 有权
标题翻译：制备有机半导体聚合物异质结的方法
公开(公告)号：US07468287B2
公开(公告)日：2008-12-23
申请号：US11363063
申请日：2006-02-28
申请人： Christopher Newsome , Thomas Kugler , Shunpu Li , David Russell
发明人： Christopher Newsome , Thomas Kugler , Shunpu Li , David Russell
IPC分类号： H01L21/00
CPC分类号： H01L51/0005 , H01L51/0007 , H01L51/424 , Y02E10/549
摘要： Provided is a method of forming a heterojunction of contiguous layers of organic semiconducting polymers. The method comprises firstly forming a layer of a first organic semiconducting polymer on a substrate. A solution of a film-forming material is then deposited on the layer of the first organic semiconducting polymer. The first organic semiconducting polymer is insoluble in this solution and so is not disturbed by its deposition. The deposited solution is then dried to form a temporary film having a thickness of less then 20 nm formed from the film-forming material. Next a solution of a second organic semiconducting polymer dissolved in an organic solvent is deposited on the temporary film and this solution dried. The solubility of the material forming the temporary film in the organic solvent and the thickness of the temporary film are such that the organic solvent permeates through the thickness of the temporary film during drying of the solution of the second organic semiconducting polymer. This causes the temporary film to break down but without disturbing the layer of the first organic semiconducting polymer so that the layer of the second organic semiconducting polymer is formed contiguously on the layer of the first organic semiconducting polymer.
摘要翻译：提供了形成有机半导体聚合物的连续层的异质结的方法。该方法包括首先在衬底上形成第一有机半导体聚合物层。然后将成膜材料的溶液沉积在第一有机半导体聚合物的层上。第一种有机半导体聚合物不溶于该溶液，因此不会因其沉积而受到干扰。然后将沉积的溶液干燥以形成由成膜材料形成的厚度小于20nm的临时膜。接下来，将溶解在有机溶剂中的第二有机半导体聚合物的溶液沉积在临时膜上，并将该溶液干燥。形成临时膜的材料在有机溶剂中的溶解度和临时膜的厚度使得有机溶剂在第二有机半导体聚合物的溶液的干燥期间渗透临时膜的厚度。这导致临时膜破裂但不干扰第一有机半导体聚合物的层，使得第二有机半导体聚合物的层在第一有机半导体聚合物的层上连续形成。

10. 发明申请

US20070105396A1 High resolution structures defined by brush painting fluid onto surface energy patterned substrates 审中-公开
标题翻译：通过刷涂液体定义在表面能图案化基材上的高分辨率结构
公开(公告)号：US20070105396A1
公开(公告)日：2007-05-10
申请号：US11589207
申请日：2006-10-30
申请人： Shunpu Li , Christopher Newsome , David Russell , Thomas Kugler
发明人： Shunpu Li , Christopher Newsome , David Russell , Thomas Kugler
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L51/0003 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F7/0002 , H01L51/0012 , H01L51/0529 , H01L51/56
摘要： Disclosed is a method for fabricating an electronic device, the method comprising creating a surface energy pattern on a substrate and brush painting a first fluid onto the substrate to form a pattern of fluid corresponding to the surface energy pattern on the substrate. Also disclosed is a thin film transistor comprising a conductive layer, a layer of insulator formed on the conductive layer, a pattern of conductive material and a first self-assembled monolayer (SAM) formed on the layer of insulator, a second SAM formed on the conductive material, and a semiconductor layer formed on the first SAM and the second SAM. Further disclosed is a brush painting apparatus comprising an ink-absorbent brush head, an ink container connected to the brush head by an ink flow path and a conveyor belt, wherein a surface of the conveyor belt faces the brush head.
摘要翻译：公开了一种制造电子器件的方法，该方法包括在衬底上产生表面能量图案，并将第一流体刷涂到衬底上以形成与衬底上的表面能量图案相对应的流体图案。还公开了一种薄膜晶体管，其包括导电层，形成在导电层上的绝缘体层，导电材料图案和形成在绝缘体层上的第一自组装单层（SAM），形成在绝缘体层上的第二SAM 导电材料和形成在第一SAM和第二SAM上的半导体层。进一步公开了一种刷涂装置，其包括吸墨刷头，通过油墨流路连接到刷头的油墨容器和传送带，其中传送带的表面面向刷头。

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