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51. 发明授权

US06204071B1 Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration 失效
标题翻译：具有反并联交换配置的带状磁阻（SMR）和双条磁阻（DSMR）头的制造方法
公开(公告)号：US06204071B1
公开(公告)日：2001-03-20
申请号：US09408491
申请日：1999-09-30
申请人： Kochan Ju , Mao-Min Chen , Cheng T. Horng , Jei-Wei Chang
发明人： Kochan Ju , Mao-Min Chen , Cheng T. Horng , Jei-Wei Chang
IPC分类号： H01L2100
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B5/3948 , G11B2005/3996
摘要： A method for forming a longitudinally magnetically biased dual stripe magnetoresistive (DSMR) sensor element comprises forming a first patterned magnetoresistive (MR) layer. Contact the opposite ends of the patterned magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer, each of the stacks including a first Anti-Ferro-Magnetic (AFM) layer and a first lead layer. Then anneal the device in the presence of a longitudinal external magnetic field. Next, form a second patterned magnetoresistive (MR) layer above the previous structure. Contact the opposite ends of the second patterned magnetoresistive (MR) layer with a second pair of stacks defining a second track width of the second patterned magnetoresistive (MR) layer. Each of the second pair of stacks includes spacer layer composed of a metal, a Ferro-Magnetic (FM) layer, a second Anti-Ferro-Magnetic (AFM) layer and a second lead layer. Then anneal the device in the presence of a second longitudinal external magnetic field.
摘要翻译：用于形成纵向磁偏置双条磁阻（DSMR）传感器元件的方法包括形成第一图案化磁阻（MR）层。用限定第一磁阻（MR）层的轨道宽度的第一对叠层接触图案化磁阻（MR）层的相对端，每个堆叠包括第一抗铁磁（AFM）层和第一铅层。然后在存在纵向外部磁场的情况下退火该器件。接下来，在先前的结构之上形成第二图案化磁阻（MR）层。用限定第二图案化磁阻（MR）层的第二磁道宽度的第二对叠层接触第二图案化磁阻（MR）层的相对端。第二对堆叠中的每一个包括由金属，铁磁（FM）层，第二抗铁磁（AFM）层和第二引线层组成的间隔层。然后在存在第二纵向外部磁场的情况下退火该器件。

52. 发明申请

US20070039166A1 Process to manufacture narrow track CPP head with bias cancellation 有权
标题翻译：制造具有偏压消除的窄轨CPP头的工艺
公开(公告)号：US20070039166A1
公开(公告)日：2007-02-22
申请号：US11588563
申请日：2006-10-27
申请人： Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
发明人： Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： The problem of increased edge sensitivity associated with the reduction of the spacing between bias magnets in a CPP head has been solved by limiting the width of the bias cancellation layer and by adding an extra layer of insulation to ensure that current through the device flows only through its central area, thereby minimizing its edge reading sensitivity.
摘要翻译：通过限制偏置消除层的宽度并添加额外的绝缘层来解决与CPP头中的偏置磁体之间的间隔减小相关联的增加的边缘灵敏度的问题，以确保通过器件的电流仅流过其中心区域，从而最小化其边缘读取灵敏度。

53. 发明授权

US06987650B2 Device with thermoelectric cooling 有权
标题翻译：热电冷却装置
公开(公告)号：US06987650B2
公开(公告)日：2006-01-17
申请号：US10443358
申请日：2003-05-22
申请人： Yue Liu , Kochan Ju , Jei-Wei Chang , Julie Chen
发明人： Yue Liu , Kochan Ju , Jei-Wei Chang , Julie Chen
IPC分类号： G11B5/39 , F25B21/02 , F25D23/12 , H01L35/28
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3912 , G11B2005/3996 , H01L35/20
摘要： Increasing the output signal from CPP GMR devices by increasing the read current has not previously been considered an option because it would make the device run too hot. This problem has been overcome by using, for the upper and lower leads, materials that differ significantly in their thermoelectric powers. Thus, when DC is passed through the device, from − to + TEP leads, hot and cold junctions are formed and heat is transferred from the micro-device into the leads, resulting in a net local cooling of the device which enables it to operate at higher power. For a GMR device, this translates to a larger output voltage, making it easier, more sensitive, and more reliable to use.
摘要翻译：增加读取电流从CPP GMR器件增加输出信号以前从未被认为是一个选项，因为它会使器件运行得太热。对于上，下引线，通过使用热电功率显着不同的材料来克服这个问题。因此，当DC通过器件时，从 - 至+ TEP引线形成热连接点和热接头，并且热量从微器件传输到引线中，导致器件的局部局部冷却，使其能够操作在更高的权力。对于GMR器件，这转化为更大的输出电压，使其更容易，更灵敏，更可靠使用。

54. 发明授权

US06524491B1 Double plate-up process for fabrication of composite magnetoresistive shared poles 失效
标题翻译：用于制造复合磁阻共享极的双层平板工艺
公开(公告)号：US06524491B1
公开(公告)日：2003-02-25
申请号：US09298935
申请日：1999-04-26
申请人： Chun Liu , Cherng-Chyi Han , Kochan Ju , Po-Kang Wang , Jei-Wei Chang
发明人： Chun Liu , Cherng-Chyi Han , Kochan Ju , Po-Kang Wang , Jei-Wei Chang
IPC分类号： G11B5127
CPC分类号： G11B5/3967 , G11B5/3163 , Y10T29/49021 , Y10T29/49032
摘要： A method of manufacturing a magnetic recording head includes the following steps. Form a low magnetic moment, first magnetic shield layer over a substrate. Form a read gap layer with a magnetoresistive head over the first shield layer. Form a seed layer over the read gap layer covered with a frame mask with a width “F”. Form a PLM second shield layer over the seed layer and planarize the shield layer. Form a non-magnetic copper or dielectric spacer layer over the PLM second shield layer. Form a first HMM, lower pole layer over the non-magnetic spacer layer. Cover the first HMM, lower pole layer with a write gap layer. Form an write head mask composed of two parallel rows of resist with an outer width “W” over the seed layer. Between the two rows of resist of the write head mask is a trench having a width “N”. Then form an HMM, upper pole layer over the write gap layer aside from the write head mask. Outside of the write head mask remove the upper pole layer and shape the lower pole layer by an IBE process.
摘要翻译：制造磁记录头的方法包括以下步骤。在基板上形成低磁矩，第一磁屏蔽层。在第一屏蔽层上形成具有磁阻头的读取间隙层。在覆盖有宽度为“F”的框架掩模的读取间隙层上形成种子层。在种子层上形成PLM第二屏蔽层，并平整屏蔽层。在PLM第二屏蔽层上形成非磁性铜或电介质间隔层。在非磁性间隔层上形成第一个HMM，下极层。覆盖第一个HMM，具有写间隙层的下极层。在种子层上形成具有外部宽度“W”的两个平行的抗蚀剂行的写入头罩。写头掩模的两行抗蚀剂之间是宽度为“N”的沟槽。然后在写入头部掩模之外的写间隙层上形成HMM，上极层。在写头掩模之外，通过IBE工艺去除上极层并形成下极层。

55. 发明授权

US06430015B2 Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration 失效
标题翻译：具有反并联交换配置的带状磁阻（SMR）和双条磁阻（DSMR）头的制造方法
公开(公告)号：US06430015B2
公开(公告)日：2002-08-06
申请号：US09773743
申请日：2001-02-02
申请人： Kochan Ju , Mao-Min Chen , Cheng T. Horng , Jei-Wei Chang
发明人： Kochan Ju , Mao-Min Chen , Cheng T. Horng , Jei-Wei Chang
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B5/3948 , G11B2005/3996
摘要： A longitudinally magnetically biased dual stripe magnetoresistive (DSMR) sensor element comprises a first patterned magnetoresistive (MR) layer. There are contacts at the opposite ends of the patterned magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer, each of the stacks including a first Anti-Ferro-Magnetic (AFM) layer and a first lead layer. With the first MR layer in place the device was annealed in the presence of a longitudinal external magnetic field. A second patterned magnetoresistive (MR) layer was formed above the previous structure. There are contacts at the opposite ends of the second patterned magnetoresistive (MR) layer with a second pair of stacks defining a second track width of the second patterned magnetoresistive (MR) layer. Each of the second pair of stacks includes spacer layer is composed of a metal, a Ferro-Magnetic (FM) layer, a second Anti-Ferro-Magnetic (AFM) layer and a second lead layer. With the second MR layer in place, the device was annealed in the presence of a second longitudinal external magnetic field.
摘要翻译：纵向磁偏置双条磁阻（DSMR）传感器元件包括第一图案化磁阻（MR）层。在图案化磁阻（MR）层的相对端处存在触点，第一对叠层限定第一磁阻（MR）层的轨道宽度，第一对堆叠限定第一磁阻（MR）的磁道宽度，层，每个堆叠包括第一抗铁磁（AFM）层和第一引线层。在第一MR层就位的情况下，器件在存在纵向外部磁场的情况下退火。在先前结构之上形成第二图案化磁阻（MR）层。在第二图案化磁阻（MR）层的相对端具有限定第二图案化磁阻（MR）层的第二磁道宽度的第二对叠层的触点。第二对堆叠中的每一个包括间隔层由金属，铁磁（FM）层，第二抗铁磁（AFM）层和第二引线层组成。在第二MR层就位的情况下，器件在第二纵向外部磁场的存在下退火。

56. 发明授权

US06393692B1 Method of manufacture of a composite shared pole design for magnetoresistive merged heads 失效
标题翻译：用于磁阻合并头的复合共轭极设计方法
公开(公告)号：US06393692B1
公开(公告)日：2002-05-28
申请号：US09283840
申请日：1999-04-01
申请人： Kochan Ju , Cherng-Chyi Han , Po-Kang Wang , Mao-Min Chen , Chun Liu , Jei-Wei Chang
发明人： Kochan Ju , Cherng-Chyi Han , Po-Kang Wang , Mao-Min Chen , Chun Liu , Jei-Wei Chang
IPC分类号： H04R3100
CPC分类号： G11B5/3912 , G11B5/3967 , Y10T29/49044 , Y10T29/49046
摘要： A merged read/write magnetic recording head comprises a low magnetic moment first magnetic shield layer over a substrate. A read gap layer with a magnetoresistive head is formed over the first shield layer. A shared pole comprises a low magnetic moment second magnetic shield layer plated on a sputtered seed PLM layer over the read gap layer, a non-magnetic layer plated over the PLM layer and a HMM lower pole layer plated over the second magnetic shield layer. A write gap layer is formed over the first high magnetic moment pole layer of the shared pole. An upper pole comprises a high magnetic moment pole layer over the write gap layer.
摘要翻译：合并的读/写磁记录头包括在衬底上的低磁矩第一磁屏蔽层。在第一屏蔽层上形成具有磁阻头的读取间隙层。共享极包括电镀在读取间隙层上的溅射种子PLM层上的低磁矩第二磁屏蔽层，镀在PLM层上的非磁性层和镀在第二磁屏蔽层上的HMM下极层。在共享极的第一高磁矩极点上形成写间隙层。上极包括写间隙层上的高磁矩极点层。

57. 发明授权

US06387599B2 Corrosion inhibitor of NiCu for high performance writers 失效
标题翻译： NiCu防腐剂用于高性能作者
公开(公告)号：US06387599B2
公开(公告)日：2002-05-14
申请号：US09756013
申请日：2001-01-08
申请人： Xuehua Wu , Yi-Chun Liu , Jei-Wei Chang , Kochan Ju
发明人： Xuehua Wu , Yi-Chun Liu , Jei-Wei Chang , Kochan Ju
IPC分类号： G03F730
CPC分类号： G03F7/322 , C23F1/02 , G11B5/3163 , H05K3/064
摘要： The problem of copper corrosion that occurs in the presence of strong alkaline developing solutions during photo rework has been overcome by protecting all exposed copper bearing surfaces from attack. Two ways of achieving this are described. In the first method, benzotriazole (BTA) is added to the developing solution which is then used in the normal way, developing time being unaffected by this modification. In the second method, the surface that is to receive the photoresist is first given a dip in a solution of BTA, following which the photoresist is immediately applied and processing, including development, proceeds as normal. For both methods the result is the elimination of all copper corrosion during development.
摘要翻译：通过保护所有暴露的铜轴承表面免受攻击，已经克服了在照相返修期间存在强碱性显影液存在的铜腐蚀问题。描述实现这一点的两种方式。在第一种方法中，将苯并三唑（BTA）加入显影液中，然后以正常方式使用，显影时间不受该改性的影响。在第二种方法中，首先将待接收光致抗蚀剂的表面浸入BTA的溶液中，随后立即施加光致抗蚀剂，并且包括显影在内的处理正常进行。对于这两种方法，结果是在开发过程中消除了所有的铜腐蚀。

58. 发明授权

US06239948B1 Non-magnetic nickel containing conductor alloys for magnetic transducer element fabrication 失效
标题翻译：用于磁换能器元件制造的非磁性含镍导体合金
公开(公告)号：US06239948B1
公开(公告)日：2001-05-29
申请号：US09360120
申请日：1999-07-23
申请人： Xuehua Wu , Kochan Ju , Jei-Wei Chang
发明人： Xuehua Wu , Kochan Ju , Jei-Wei Chang
IPC分类号： G11B5235
CPC分类号： G11B5/235 , G11B5/3109 , G11B5/313 , G11B5/3903 , G11B5/3967
摘要： A non-magnetic conductor material, a magnetic transducer element having formed therein a non-magnetic conductor layer formed of the non-magnetic conductor material and a method for forming a magnetic transducer element having formed therein the non-magnetic conductor layer formed of the non-magnetic conductor material. The non-magnetic conductor material comprises an alloy comprising nickel and at least one non-magnetic conductor metal selected from the group consisting of copper at a weight percent of from about 45 to about 90, zinc at a weight percent of from about 20 to about 75, cadmium at a weight percent of from about 35 to about 85, platinum at a weight percent of from about 55 to about 90 and palladium at a weight percent of from about 75 to about 95. The non-magnetic conductor material contemplates the magnetic transducer element and the method for forming the magnetic transducer element. The non-magnetic conductor material has physical properties, chemical properties and electrochemical properties, but not magnetic properties, analogous to the physical properties, chemical properties and electrochemical properties exhibited by magnetic layers employed within magnetic transducer elements.
摘要翻译：一种非磁性导体材料，其中形成有由非磁性导体材料形成的非磁性导体层的磁性换能器元件以及形成其中形成有非磁性导体材料的非磁性导体层的磁性换能器元件的方法，磁导体材料。非磁性导体材料包括合金，其包含镍和至少一种选自重量百分比约为45至约90的铜的非磁性导体金属，重量百分比约为20至约20的锌 75，重量百分比为约35至约85的镉，以重量百分比为约55至约90的铂，以及重量百分比为约75至约95的钯。非磁性导体材料考虑了磁性换能器元件和形成磁换能器元件的方法。非磁性导体材料具有物理性质，化学性质和电化学性质，但不具有类似于在磁换能器元件内使用的磁性层所表现的物理性能，化学性质和电化学性能的磁性能。

59. 发明授权

US5719730A Low fringe-field and narrow write-track magneto-resistive (MR) magnetic read-write head 失效
标题翻译：低边缘场和窄写磁阻（MR）磁读写头
公开(公告)号：US5719730A
公开(公告)日：1998-02-17
申请号：US682476
申请日：1996-07-17
申请人： Jei-Wei Chang , Kochan Ju , Yimin Guo , Xizeng Shi , Arthur Hungshin Tao
发明人： Jei-Wei Chang , Kochan Ju , Yimin Guo , Xizeng Shi , Arthur Hungshin Tao
IPC分类号： G11B5/012 , G11B5/187 , G11B5/265 , G11B5/31 , G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1871 , G11B5/2651 , G11B5/3103 , G11B5/3116 , G11B5/3967 , G11B2005/3996 , G11B5/012
摘要： A low fringe-field and narrow write-track magnetic read-write head. The low fringe-field and narrow write-track magnetic read-write head includes a first pole layer formed adjoining an insulator layer over a substrate. The first pole layer has a first air bearing surface which has a first edge adjoining and parallel with a first surface of the insulator layer. The low fringe-field and narrow write-track magnetic read-write head also includes a second pole layer separated from the first pole layer by the insulator layer. The second pole layer has a width no greater than about 20 microns and a width no greater than about 100 percent of the width of the first pole layer where the width of the second pole layer is contained within the width of the first pole layer. The second pole layer also has a second air bearing surface coplanar with the first air bearing surface. The second air bearing surface has a second edge adjoining and parallel with a second surface of the insulator layer parallel and opposite from the first surface of the insulator layer. Finally, there is removed at least one portion of at least one of: (1) the second air bearing surface including at least one outer portion of the second edge; and (2) the first air bearing surface including at least one portion of the first edge most closely adjoining but not opposite the second edge.
摘要翻译：低边缘场和窄写磁道磁读写头。低条纹场和窄写磁道磁读写头包括邻近衬底上的绝缘体层形成的第一极层。第一极层具有第一空气轴承表面，其具有与绝缘体层的第一表面相邻并平行的第一边缘。低条纹场和窄写磁道磁读写头还包括通过绝缘体层与第一极层分离的第二极层。第二极层的宽度不大于约20微米，宽度不大于第一极层的宽度的第一极层的宽度的大约百分之百，其中第二极层的宽度包含在第一极层的宽度内。第二极层还具有与第一空气轴承表面共面的第二空气轴承表面。第二空气轴承表面具有与绝缘体层的与绝缘体层的第一表面平行且相对的绝缘体层的第二表面相邻并平行的第二边缘。最后，移除至少一部分至少一个：（1）第二空气支承表面包括第二边缘的至少一个外部部分; 和（2）所述第一空气轴承表面包括所述第一边缘的至少一部分最接近但不相对于所述第二边缘。

60. 发明申请

US20050168880A1 Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads 失效
公开(公告)号：US20050168880A1
公开(公告)日：2005-08-04
申请号：US11091281
申请日：2005-03-28
申请人： Bernard Dieny , Cheng Horng , Kochan Ju , Min Li , Simon Liao
发明人： Bernard Dieny , Cheng Horng , Kochan Ju , Min Li , Simon Liao
IPC分类号： G01R33/09 , G11B5/39 , H01F10/16 , H01F10/32 , H01F41/14 , H01L43/08 , H01L43/10 , H01L43/12 , G11B5/33 , G11B5/127
CPC分类号： H01F41/302 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996 , H01F10/3259 , H01F10/3272
摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

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