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    • 53. 发明申请
    • Contact resistance device for improved process control
    • 接触电阻器件,用于改进过程控制
    • US20050110512A1
    • 2005-05-26
    • US10723701
    • 2003-11-26
    • Michael BermanSteven Reder
    • Michael BermanSteven Reder
    • C25D21/12G01R31/26H01L21/288
    • C25D21/12H01L21/2885
    • A device for measuring resistances associated with electrical contacts of a contact ring used in a semiconductor wafer electroplating process. The device includes a substrate and a conductive pattern on the substrate. The conductive pattern is electrically contactable with the electrical contacts of the contact ring. Resistance measurement circuitry is connected to the conductive pattern. The resistance measurement circuitry is configured to send test signals to the conductive pattern, receive signals from the conductive pattern, and measure the resistances associated with the electrical contacts of the contact ring. A method of using such a device to measure resistances associated with electrical contacts of a contact ring used in a semiconductor wafer electroplating process is also provided.
    • 一种用于测量与半导体晶片电镀工艺中使用的接触环的电触点相关联的电阻的装置。 该器件在衬底上包括衬底和导电图案。 导电图案与接触环的电触点电接触。 电阻测量电路连接到导电图案。 电阻测量电路被配置为将测试信号发送到导电图案,从导电图案接收信号,并测量与接触环的电触点相关联的电阻。 还提供了使用这种装置来测量与在半导体晶片电镀工艺中使用的接触环的电触点相关联的电阻的方法。
    • 56. 发明授权
    • Laminate low K film
    • 层压低K膜
    • US06869893B2
    • 2005-03-22
    • US10277025
    • 2002-10-21
    • Steven RederMichael BermanRennie Barber
    • Steven RederMichael BermanRennie Barber
    • H01L21/312H01L21/31
    • H01L21/022H01L21/312
    • Application of an extremely low K material by the application of a laminate onto a wafer. The laminate preferably contains alternating layers of low K material and etch stop layers, and could be applied by rolling the laminate onto the wafer. An anneal process can be utilized to bond the film to the wafer. Conventional photo masking and etching techniques are then used to open vias and line areas in the film, and to deposit the next copper layer on the wafer. Electro polishing can be used to planarize or remove residual copper. Thereafter, an etch step can be performed to remove the excess material between the copper lines to leave an ultra low K region between the copper lines. The next layer of low K film can then be deposited, and the process repeated for all subsequent metal layering.
    • 通过在晶片上施加层压材料来应用极低K材料。 层压件优选地包含低K材料和蚀刻停止层的交替层,并且可以通过将层压体滚动到晶片上来施加。 可以利用退火工艺将膜粘合到晶片上。 然后使用常规的光掩模和蚀刻技术来打开膜中的通孔和线区域,并将下一个铜层沉积在晶片上。 电抛光可用于平坦化或去除残留的铜。 此后,可以执行蚀刻步骤以去除铜线之间的多余材料,以在铜线之间留下超低K区。 然后可以沉积下一层低K膜,并且对于所有随后的金属分层重复该过程。