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51. 发明授权

US07002775B2 Head for perpendicular magnetic recording with a shield structure connected to the return pole piece 有权
标题翻译：磁头垂直磁记录，屏蔽结构连接到返回极片
公开(公告)号：US07002775B2
公开(公告)日：2006-02-21
申请号：US10676742
申请日：2003-09-30
申请人： Yimin Hsu , Quang Le , James Lamar Nix , Mason Lamar Williams
发明人： Yimin Hsu , Quang Le , James Lamar Nix , Mason Lamar Williams
IPC分类号： G11B5/147
CPC分类号： G11B5/3116 , G11B5/11 , G11B5/1278 , G11B5/315 , G11B2005/0029
摘要： An embodiment of the invention is a head for perpendicular recording that has a trailing shield and side shields that are connected to the return pole piece by two studs of ferromagnetic material. The studs extend parallel to the track direction and are located a sufficient distance away from the main pole piece to reduce the flux flow from the main pole piece to the studs. Optionally the studs can be recessed behind the air-bearing surface. The preferred embodiment of the invention is a magnetic transducer with separated read and write heads for perpendicular recording.
摘要翻译：本发明的一个实施例是用于垂直记录的头部，其具有通过两个铁磁材料柱连接到返回极片的后屏蔽和侧屏蔽。螺柱平行于轨道方向延伸，并且距离主极片足够远的距离，以减少从主极片到螺柱的通量流。可选地，螺柱可以凹入空气轴承表面后面。本发明的优选实施例是具有分离的用于垂直记录的读写头的磁性换能器。

52. 发明申请

US20060004983A1 Method, system, and program for managing memory options for devices 审中-公开
标题翻译：用于管理设备的内存选项的方法，系统和程序
公开(公告)号：US20060004983A1
公开(公告)日：2006-01-05
申请号：US10882986
申请日：2004-06-30
申请人： Gary Tsao , Quang Le , Ashish Choubal , Hemal Shah
发明人： Gary Tsao , Quang Le , Ashish Choubal , Hemal Shah
IPC分类号： G06F12/08
CPC分类号： G06F12/1081 , G06F12/1063
摘要： Provided are a method, system, and program for managing memory options for a device such as an I/O device. Private addresses provided by logic blocks within the device may be transparently routed to either an optional external memory or to system memory, depending upon which of the optional memories the private address has been mapped.
摘要翻译：提供了一种用于管理诸如I / O设备的设备的存储器选项的方法，系统和程序。取决于私有地址已被映射到哪个可选存储器，设备内的逻辑块提供的专用地址可以被透明地路由到可选的外部存储器或系统存储器。

53. 发明申请

US20060002023A1 Magnetic head having a deposited second magnetic shield and fabrication method therefor 审中-公开
标题翻译：具有沉积的第二磁屏蔽的磁头及其制造方法
公开(公告)号：US20060002023A1
公开(公告)日：2006-01-05
申请号：US10883327
申请日：2004-06-30
申请人： Quang Le , Edwin Hin Lee , Jui-Lung Li , Nian-Xiang Sun , Yi Zheng
发明人： Quang Le , Edwin Hin Lee , Jui-Lung Li , Nian-Xiang Sun , Yi Zheng
IPC分类号： G11B5/147 , G11B5/127 , G11B5/33
CPC分类号： B82Y10/00 , G11B5/3163 , G11B5/3912
摘要： The magnetic head includes a second magnetic shield that is fabricated in a deposition process. The present invention therefore does not require the deposition of the electrically conductive seed layer. In a preferred embodiment, the deposited second magnetic shield is comprised of cobalt zirconium tantalum (CZT). Because the CZT material is relatively soft, it is preferably deposited within an opening formed in a relatively hard RIEable material such as Ta2O5, SiO2, Si3N3, and SiOxNy, such that a subsequent chemical mechanical polishing (CMP) step can be conducted down to the surface of the relatively hard layer.
摘要翻译：磁头包括在沉积工艺中制造的第二磁屏蔽。因此，本发明不要求导电种子层的沉积。在优选实施例中，所沉积的第二磁屏蔽由钴锆钽（CZT）组成。由于CZT材料相对较软，因此优选沉积在形成于相对较硬的RIEable材料（例如Ta 2 O 5，SiO 2）中的开口内， SUB>，Si 3 N 3 N 3和SiO x N N y，使得随后的化学机械抛光（ CMP）步骤可以向下传导到相对硬的层的表面。

54. 发明申请

US20060000795A1 Method for fabricating a pole tip in a magnetic transducer 有权
标题翻译：用于在磁换能器中制造极尖的方法
公开(公告)号：US20060000795A1
公开(公告)日：2006-01-05
申请号：US10882883
申请日：2004-06-30
申请人： Tsung Chen , David Druist , Quang Le , Kim Lee , Chun-Ming Wang , Howard Zolla
发明人： Tsung Chen , David Druist , Quang Le , Kim Lee , Chun-Ming Wang , Howard Zolla
IPC分类号： B44C1/22
CPC分类号： G11B5/3163 , G11B5/1278 , G11B5/3116 , Y10T29/49032
摘要： A method for fabricating a magnetic head with a trapezoidal shaped pole piece tip is described. The body of the main pole piece is deposited, then one or more layers for the pole piece tip are deposited. A bed material is deposited over the pole piece tip material. A void is formed in the bed material over the area for the pole piece tip. The void is filled with an ion-milling resistant material such as alumina preferably using atomic layer deposition or atomic layer chemical vapor deposition. The excess ion-milling resistant material and the bed material are removed. The result is an ion-milling mask formed over the area for the pole piece tip. Ion milling is then used to remove the unmasked material in the pole piece tip layer and to form a beveled pole piece tip and preferably a beveled face on the main pole piece.
摘要翻译：描述了制造具有梯形极片尖端的磁头的方法。沉积主极片的主体，然后沉积用于极片尖端的一个或多个层。床材料沉积在极片末端材料上。在用于极片尖端的区域上的床材料中形成空隙。空隙填充有耐离子碾磨材料，例如氧化铝，优选使用原子层沉积或原子层化学气相沉积。除去过量的抗离子碾磨材料和床料。结果是在极片尖端的区域上形成离子铣削掩模。然后使用离子铣削去除极片末端层中的未掩模材料，并且在主极片上形成斜面极片末端，并且优选地形成斜面。

55. 发明申请

US20050210202A1 Managing input/output (I/O) requests in a cache memory system 有权
标题翻译：在缓存系统中管理输入/输出（I / O）请求
公开(公告)号：US20050210202A1
公开(公告)日：2005-09-22
申请号：US10805105
申请日：2004-03-19
申请人： Ashish Choubal , Christopher Foulds , Madhu Gumma , Quang Le
发明人： Ashish Choubal , Christopher Foulds , Madhu Gumma , Quang Le
IPC分类号： G06F12/00 , G06F12/08
CPC分类号： G06F12/0835
摘要： Provided are a method, system, and program for managing Input/Output (I/O) requests in a cache memory system. A request is received to data at a memory address in a first memory device, wherein data in the first memory device is cached in a second memory device. A determination is made as to whether to fetch the requested data from the first memory device to cache in the second memory device in response to determining that the requested data is not in the second memory device. The requested data in the first memory device is accessed and the second memory device is bypassed to execute the request in response to determining not to fetch the requested data from the first memory device to cache in the second memory device.
摘要翻译：提供了一种用于管理缓存存储器系统中的输入/输出（I / O）请求的方法，系统和程序。接收到第一存储器设备中的存储器地址上的数据的请求，其中第一存储器设备中的数据被高速缓存在第二存储器设备中。响应于确定所请求的数据不在第二存储器设备中，确定是否从第一存储器设备获取所请求的数据以缓存在第二存储器设备中。响应于确定不从第一存储器设备获取所请求的数据以缓存在第二存储器设备中，访问第一存储器设备中所请求的数据并绕过第二存储器件以执行请求。

56. 发明申请

US20050068669A1 Head for perpendicular recording with a floating trailing shield 有权
标题翻译：头垂直记录与浮动的后盾
公开(公告)号：US20050068669A1
公开(公告)日：2005-03-31
申请号：US10671639
申请日：2003-09-26
申请人： Yimin Hsu , Quang Le , Mason Williams
发明人： Yimin Hsu , Quang Le , Mason Williams
IPC分类号： G11B5/31 , G11B5/127 , G11B5/147 , G11B5/187
CPC分类号： G11B5/315 , G11B5/1278 , G11B5/147 , G11B5/1871
摘要： Heads for perpendicular recording using a floating-trailing shield as part of the magnetic circuit for writing magnetic domains in the recording media are described. The floating-trailing shield is separated from the main pole piece by a layer of non-magnetic material along its entire length and the air bearing surface of the floating-trailing shield is substantially larger than that of the main pole piece. The reluctance between the trailing shield and the underlayer in the recording medium is made so low that both are at the same magnetomotive force (or potential), so that no direct connection is needed between the floating-trailing shield and the yoke. When the head is used in a storage system with a magnetic recording medium with a soft underlayer, the floating-trailing shield is, in effect, magnetically shorted to the return pole piece during recording. In a second embodiment of the invention the floating-trailing shield extends around the sides of the main pole piece to reduce the off-track magnetic field.
摘要翻译：描述了使用浮动拖尾屏蔽作为用于在记录介质中写入磁畴的磁路的一部分的垂直记录头。浮动后挡板沿着其整个长度由非磁性材料层与主极片分开，并且浮动后挡板的空气支承表面基本上大于主极片的空气支承表面。记录介质中的后屏蔽和底层之间的磁阻被制作得很低以致两者都具有相同的磁动势（或电位），使得在浮动后挡板和轭之间不需要直接连接。当头部用于具有软底层的磁记录介质的存储系统中时，浮动拖尾屏蔽件实际上在记录期间与返回极片磁性短路。在本发明的第二实施例中，浮动后挡板围绕主极片的侧面延伸以减少偏离磁场。

57. 发明授权

US08296930B2 Method for manufacturing a magnetoresistive sensor having a flat shield 有权
标题翻译：具有平面屏蔽的磁阻传感器的制造方法
公开(公告)号：US08296930B2
公开(公告)日：2012-10-30
申请号：US12645323
申请日：2009-12-22
申请人： Shin Funada , Quang Le , Thomas L. Leong , Jui-Lung Li , Chang-Man Park , Ning Shi , Hicham M. Sougrati
发明人： Shin Funada , Quang Le , Thomas L. Leong , Jui-Lung Li , Chang-Man Park , Ning Shi , Hicham M. Sougrati
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3163 , G11B5/112 , G11B5/3912 , G11B5/398 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49067
摘要： A method for manufacturing a magnetoresistive sensor that results in the sensor having a very flat top magnetic shield. The process involves depositing a plurality of sensor layers and then depositing a thin high density carbon CMP stop layer over the sensor layers and forming a mask over the CMP stop layer. An ion milling is performed to define the sensor. Then a thin insulating layer and magnetic hard bias layer are deposited. A chemical mechanical polishing is performed to remove the mask and a reactive ion etching is performed to remove the remaining carbon CMP stop layer. Because the CMP stop layer is very dense and hard, it can be made very thin. This means that when it is removed by reactive ion etching, there is very little notching over the sensor, thereby allowing the upper shield to be very thin.
摘要翻译：一种用于制造磁阻传感器的方法，其导致传感器具有非常平坦的顶部磁屏蔽。该过程包括沉积多个传感器层，然后在传感器层上沉积薄的高密度碳CMP停止层，并在CMP停止层上形成掩模。执行离子铣削来定义传感器。然后沉积薄的绝缘层和磁性硬偏置层。进行化学机械抛光以除去掩模，并执行反应离子蚀刻以除去剩余的碳CMP停止层。因为CMP停止层非常致密且硬，所以可以使其非常薄。这意味着当通过反应离子蚀刻去除时，在传感器上几乎没有凹口，从而允许上部屏蔽（沉积在其上）非常薄。

58. 发明申请

US20120127616A1 TMR READER WITHOUT DLC CAPPING STRUCTURE 有权
标题翻译： TMR读取器，无DLC封装结构
公开(公告)号：US20120127616A1
公开(公告)日：2012-05-24
申请号：US12954508
申请日：2010-11-24
申请人： HONGLIN ZHU , Liubo Hong , Hicham M. Sougrati , Quang Le , Jui-Lung Li , Chando Park
发明人： HONGLIN ZHU , Liubo Hong , Hicham M. Sougrati , Quang Le , Jui-Lung Li , Chando Park
IPC分类号： G11B5/33 , B44C1/22 , B05D5/12
CPC分类号： G11B5/3163 , G01R33/098 , G11B5/3909 , G11B5/3929 , G11B5/3932
摘要： Embodiments herein generally relate to TMR readers and methods for their manufacture. The embodiments discussed herein disclose TMR readers that utilize a structure that avoids use of the DLC layer over the sensor structure and over the hard bias layer. The capping structure over the sensor structure functions as both a protective layer for the sensor structure and a CMP stop layer. The hard bias capping structure functions as both a protective structure for the hard bias layer and as a CMP stop layer. The capping structures that are free of DLC reduce the formation of notches in the second shield layer so that second shield layer is substantially flat.
摘要翻译：本文的实施方案通常涉及TMR读取器及其制造方法。本文讨论的实施例公开了使用避免在传感器结构上以及硬偏压层上使用DLC层的结构的TMR读取器。传感器结构上的封盖结构用作传感器结构的保护层和CMP停止层。硬偏置封盖结构既用作硬偏置层的保护结构又用作CMP停止层。没有DLC的封盖结构减少了第二屏蔽层中的凹口的形成，使得第二屏蔽层基本上是平的。

59. 发明授权

US08099855B2 Methods for fabricating perpendicular recording heads with controlled separation regions 有权
标题翻译：用于制造具有受控分离区域的垂直记录头的方法
公开(公告)号：US08099855B2
公开(公告)日：2012-01-24
申请号：US11957467
申请日：2007-12-16
申请人： Quang Le
发明人： Quang Le
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3116 , G11B5/3163 , G11B5/3169 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： Methods of recording head fabrication are provided to fabricate a region of separation material between a write pole and a shield of a write head that forms a controlled spacing between the write pole and the shield of the write head. The method comprises forming a mask structure having an opening exposing a write pole of the write head and forming separation material above the portions of the write pole exposed by the opening. The method further comprises removing the mask structure and forming a shield of the write head above the separation material. The separation material forms a spacing between the write pole and the shield, which controls the amount of flux from the write pole absorbed by a shield (e.g., a wrap around shield) of the write head.
摘要翻译：提供记录头制造方法，以在写入磁头和写入磁头的屏蔽之间形成分离材料区域，该写入磁头与写入磁头的写入磁极和写入磁头的屏蔽之间形成受控的间隔。该方法包括形成掩模结构，其具有暴露写入头的写入极的开口，并且在由开口暴露的写入极的部分上方形成分离材料。该方法还包括去除掩模结构并在分离材料上方形成写入头的屏蔽。分离材料在写入磁极和屏蔽之间形成一个间隔，其控制来自写入磁头的写入磁极的磁通量，由写入磁头的屏蔽（例如，环绕屏蔽）吸收。

60. 发明授权

US07649712B2 Self aligned wrap around shield for perpendicular magnetic recording 有权
标题翻译：自对准绕线屏蔽用于垂直磁记录
公开(公告)号：US07649712B2
公开(公告)日：2010-01-19
申请号：US11116753
申请日：2005-04-27
申请人： Quang Le , Nian-Xiang Sun , Howard Gordon Zolla
发明人： Quang Le , Nian-Xiang Sun , Howard Gordon Zolla
IPC分类号： G11B5/33
CPC分类号： G11B5/1278 , G11B5/1475 , G11B5/23 , G11B5/3116 , G11B5/315 , G11B5/3163
摘要： A write element for use in perpendicular magnetic recording. The write element including a write pole and a self aligned wrap around shield that can have a trailing shield gap thickness that is different from its side shield gap thickness. The materials making up the trailing shield gap and the side shield gaps can be different materials or can be the same material deposited in two different steps. The side or wrap around portions of the trailing shield can extend down to the level of the leading edge of the write pole or can terminate at some point between the levels of the leading and trailing edge to form a partial wrap around trailing shield.
摘要翻译：用于垂直磁记录的写入元件。写入元件包括写入极和自对准的围绕屏蔽的外壳，其可以具有与其侧屏蔽间隙厚度不同的后屏蔽间隙厚度。构成后屏蔽间隙和侧屏蔽间隙的材料可以是不同的材料，或者可以是在两个不同步骤中沉积的相同材料。后挡板的侧面或环绕的部分可以向下延伸到写柱的前缘的水平面，或者可以在前缘和后缘的水平面之间的某个点处终止，以形成围绕后挡板的部分包裹。

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