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1. 发明申请

US20050210202A1 Managing input/output (I/O) requests in a cache memory system 有权
标题翻译：在缓存系统中管理输入/输出（I / O）请求
公开(公告)号：US20050210202A1
公开(公告)日：2005-09-22
申请号：US10805105
申请日：2004-03-19
申请人： Ashish Choubal , Christopher Foulds , Madhu Gumma , Quang Le
发明人： Ashish Choubal , Christopher Foulds , Madhu Gumma , Quang Le
IPC分类号： G06F12/00 , G06F12/08
CPC分类号： G06F12/0835
摘要： Provided are a method, system, and program for managing Input/Output (I/O) requests in a cache memory system. A request is received to data at a memory address in a first memory device, wherein data in the first memory device is cached in a second memory device. A determination is made as to whether to fetch the requested data from the first memory device to cache in the second memory device in response to determining that the requested data is not in the second memory device. The requested data in the first memory device is accessed and the second memory device is bypassed to execute the request in response to determining not to fetch the requested data from the first memory device to cache in the second memory device.
摘要翻译：提供了一种用于管理缓存存储器系统中的输入/输出（I / O）请求的方法，系统和程序。接收到第一存储器设备中的存储器地址上的数据的请求，其中第一存储器设备中的数据被高速缓存在第二存储器设备中。响应于确定所请求的数据不在第二存储器设备中，确定是否从第一存储器设备获取所请求的数据以缓存在第二存储器设备中。响应于确定不从第一存储器设备获取所请求的数据以缓存在第二存储器设备中，访问第一存储器设备中所请求的数据并绕过第二存储器件以执行请求。

2. 发明申请

US20060004983A1 Method, system, and program for managing memory options for devices 审中-公开
标题翻译：用于管理设备的内存选项的方法，系统和程序
公开(公告)号：US20060004983A1
公开(公告)日：2006-01-05
申请号：US10882986
申请日：2004-06-30
申请人： Gary Tsao , Quang Le , Ashish Choubal , Hemal Shah
发明人： Gary Tsao , Quang Le , Ashish Choubal , Hemal Shah
IPC分类号： G06F12/08
CPC分类号： G06F12/1081 , G06F12/1063
摘要： Provided are a method, system, and program for managing memory options for a device such as an I/O device. Private addresses provided by logic blocks within the device may be transparently routed to either an optional external memory or to system memory, depending upon which of the optional memories the private address has been mapped.
摘要翻译：提供了一种用于管理诸如I / O设备的设备的存储器选项的方法，系统和程序。取决于私有地址已被映射到哪个可选存储器，设备内的逻辑块提供的专用地址可以被透明地路由到可选的外部存储器或系统存储器。

3. 发明授权

US08615868B2 Method for manufacturing a magnetic sensor using two step ion milling 有权
标题翻译：使用两步离子铣削制造磁传感器的方法
公开(公告)号：US08615868B2
公开(公告)日：2013-12-31
申请号：US13306887
申请日：2011-11-29
申请人： Yongchul Ahn , Xiaozhong Dang , Quang Le , Simon H. Liao
发明人： Yongchul Ahn , Xiaozhong Dang , Quang Le , Simon H. Liao
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3909 , B82Y10/00 , G11B5/3163 , G11B5/3193 , G11B5/398 , G11B2005/3996 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for manufacturing a magnetic sensor that includes depositing a plurality of mask layers, then forming a stripe height defining mask over the sensor layers. A first ion milling is performed just sufficiently to remove portions of the free layer that are not protected by the stripe height defining mask, the first ion milling being terminated at the non-magnetic barrier or spacer layer. A dielectric layer is then deposited, preferably by ion beam deposition. A second ion milling is then performed to remove portions of the pinned layer structure that are not protected by the mask, the free layer being protected during the second ion milling by the dielectric layer.
摘要翻译：一种用于制造磁传感器的方法，包括沉积多个掩模层，然后在传感器层上形成条纹高度限定掩模。执行第一离子铣削足以除去未被条形高度限定掩模保护的自由层的部分，第一离子铣削在非磁性阻挡层或间隔层处终止。然后优选通过离子束沉积沉积介电层。然后执行第二离子铣削以去除未被掩模保护的钉扎层结构的部分，在通过介电层进行第二离子铣削期间保护自由层。

4. 发明授权

US08553371B2 TMR reader without DLC capping structure 有权
标题翻译： TMR读卡器无DLC封盖结构
公开(公告)号：US08553371B2
公开(公告)日：2013-10-08
申请号：US12954508
申请日：2010-11-24
申请人： Honglin Zhu , Liubo Hong , Hicham M. Sougrati , Quang Le , Jui-Lung Li , Chando Park
发明人： Honglin Zhu , Liubo Hong , Hicham M. Sougrati , Quang Le , Jui-Lung Li , Chando Park
IPC分类号： G11B5/39
CPC分类号： G11B5/3163 , G01R33/098 , G11B5/3909 , G11B5/3929 , G11B5/3932
摘要： Embodiments herein generally relate to TMR readers and methods for their manufacture. The embodiments discussed herein disclose TMR readers that utilize a structure that avoids use of the DLC layer over the sensor structure and over the hard bias layer. The capping structure over the sensor structure functions as both a protective layer for the sensor structure and a CMP stop layer. The hard bias capping structure functions as both a protective structure for the hard bias layer and as a CMP stop layer. The capping structures that are free of DLC reduce the formation of notches in the second shield layer so that second shield layer is substantially flat.
摘要翻译：本文的实施方案通常涉及TMR读取器及其制造方法。本文讨论的实施例公开了TMR读取器，其利用了避免在传感器结构上以及硬偏置层上使用DLC层的结构。传感器结构上的封盖结构用作传感器结构的保护层和CMP停止层。硬偏置封盖结构既用作硬偏置层的保护结构又用作CMP停止层。没有DLC的封盖结构减少了第二屏蔽层中的凹口的形成，使得第二屏蔽层基本上是平的。

5. 发明申请

US20130083432A1 MAGNETIC BIAS STRUCTURE FOR MAGNETORESISTIVE SENSOR 审中-公开
标题翻译：磁传感器的磁偏置结构
公开(公告)号：US20130083432A1
公开(公告)日：2013-04-04
申请号：US13249076
申请日：2011-09-29
申请人： Quang Le , Simon H. Liao , Shuxia Wang , Guangli Liu , Yongchul Ahn
发明人： Quang Le , Simon H. Liao , Shuxia Wang , Guangli Liu , Yongchul Ahn
IPC分类号： G11B5/60 , G11B5/127
CPC分类号： G11B5/3163 , G01R33/093 , G11B5/3932 , G11B5/398 , Y10T29/49048
摘要： A magnetic read head having a hard bias structure that both optimizes magnetic bias field and also ensures manufacturability while maintaining sensor stripe height integrity. The read head includes a sensor stack having a back edge and first and second laterally opposed sides. A hard bias structure extending from each of the first and second sides of the sensor stack has a neck portion located near the sensor and having a back edge that is aligned with and parallel to the back edge of the sensor stack. The hard bias structure also includes a flared portion having a back edge that defines an angle relative to the air bearing surface of the read head. The back edge preferably defines and angle of 45-75 degrees relative to the air bearing surface.
摘要翻译：具有硬偏置结构的磁读头，其既优化磁偏置场，又确保可制造性，同时保持传感器条高度的完整性。读头包括具有后边缘和第一和第二横向相对侧的传感器堆叠。从传感器堆叠的第一和第二侧的每一个延伸的硬偏压结构具有位于传感器附近的颈部，并且具有与传感器堆叠的后边缘对准并平行的后边缘。硬偏置结构还包括具有相对于读头的空气支承表面限定角度的后边缘的扩口部分。后边缘优选地限定相对于空气轴承表面45-75度的角度。

6. 发明申请

US20130001187A1 METHOD FOR MANUFACTURING A MAGNETORESISTIVE SENSOR USING SIMULTANEOUSLY FORMED HARD BIAS AND ELECTRICAL LAPPING GUIDE 有权
标题翻译：使用同时形成的硬度和电气导线制造磁传感器的方法
公开(公告)号：US20130001187A1
公开(公告)日：2013-01-03
申请号：US13172739
申请日：2011-06-29
申请人： Quang Le , Shin Funada , Jui-Lung Li
发明人： Quang Le , Shin Funada , Jui-Lung Li
IPC分类号： G11B5/127 , C23F1/00 , B05D5/12
CPC分类号： G03F7/20 , B82Y10/00 , G11B5/3169 , G11B5/3909 , G11B2005/3996
摘要： A method for manufacturing a magnetic sensor using an electrical lapping guide deposited and patterned simultaneously with a hard bias structure of the sensor material. The method includes depositing a sensor material, and patterning and ion milling the sensor material to define a track width of the sensor. A magnetic, hard bias material is then deposited and a second patterning and ion milling process is performed to simultaneously define the back edge of an electrical lapping guide and a back edge of the sensor.
摘要翻译：一种用传感器材料的硬偏置结构沉积和图案化的电研磨导向器制造磁传感器的方法。该方法包括沉积传感器材料，以及图案化和离子铣削传感器材料以限定传感器的轨道宽度。然后沉积磁性，硬偏置材料，并且执行第二图案化和离子铣削工艺以同时限定电研磨引导件的后边缘和传感器的后边缘。

7. 发明授权

US08252516B2 Manufacturing a narrow track read head 有权
标题翻译：制造窄轨读头
公开(公告)号：US08252516B2
公开(公告)日：2012-08-28
申请号：US12261241
申请日：2008-10-30
申请人： Quang Le , Jui-Lung Li
发明人： Quang Le , Jui-Lung Li
IPC分类号： G11B5/127
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3116 , G11B5/398 , Y10T29/49032 , Y10T29/49043
摘要： Embodiments of the invention operate to narrow the track width of a read head used in a disk drive. In one embodiment, a magnetic read head has a track width of about 40 nm or less. The read head is fabricated by a method that includes fabricating a film stack from a substrate, a sensor material, a stop material, a first release material, a mask material, and a photo resist material. The mask material may include a masking substrate material and a second release material. The film stack is processed by forming a read head image in the photo resist material, removing portions of the film stack that lie outside the read head image of the photo resist material, stripping the film stack to remove the photo resist, mask and first release materials, and milling the sensor material according to the read head image.
摘要翻译：本发明的实施例用于缩小磁盘驱动器中使用的读取头的磁道宽度。在一个实施例中，磁读头具有约40nm或更小的轨道宽度。读取头通过包括从基底，传感器材料，止挡材料，第一释放材料，掩模材料和光致抗蚀剂材料制造薄膜叠层的方法制造。掩模材料可以包括掩蔽衬底材料和第二释放材料。通过在光致抗蚀剂材料中形成读头图像来处理胶片堆叠，去除位于光致抗蚀剂材料的读取头图像之外的膜堆叠的部分，剥离胶片堆叠以除去光致抗蚀剂，掩模和第一释放材料，并根据读头图像铣削传感器材料。

8. 发明申请

US20120125884A1 METHOD FOR MANUFACTURING A NARROW MAGNETIC READ WIDTH CURRENT PERPENDICULAR TO PLANE MAGNETORESISTIVE SENSOR 审中-公开
标题翻译：磁性传感器制造窄磁场读出宽度电流的方法
公开(公告)号：US20120125884A1
公开(公告)日：2012-05-24
申请号：US12954437
申请日：2010-11-24
申请人： Ki S. Chung , Vincent Gemena , Quang Le , Eileen Yan
发明人： Ki S. Chung , Vincent Gemena , Quang Le , Eileen Yan
IPC分类号： C23F1/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A method for manufacturing a magnetic read head having a very narrow track width. The method includes the use of a non-Si containing photoresist to form a mask prior to ion milling to define the track-width of the sensor. Previously only Si-containing resists were used. The Si in the resist turned to an oxide, which allowed the photoresist to withstand the reactive ion etching used for image transfer to an underlying hard mask. The Si-containing resist, however, has limitations as to how small the mask can be made. It has been found that a non-Si-containing resist provides better resolution at very narrow track-width definition, and also provides good temperature resistance. Some modifications to the process allow the non-Si-containing resist to be used in the construction of the magnetic read sensor.
摘要翻译：一种制造具有非常窄轨道宽度的磁读头的方法。该方法包括使用非Si含光致抗蚀剂在离子铣削之前形成掩模以限定传感器的轨道宽度。以前只使用含硅的抗蚀剂。抗蚀剂中的Si转变为氧化物，这使得光致抗蚀剂能承受用于图像转移到下面的硬掩模的反应离子蚀刻。然而，含Si抗蚀剂对于可以制造掩模有多小有限制。已经发现，非含硅抗蚀剂在非常窄的轨道宽度定义下提供更好的分辨率，并且还提供良好的耐温性。对该过程的一些修改允许在构造磁读取传感器中使用非含Si抗蚀剂。

9. 发明授权

US08136227B2 Method for making a magnetic head having a non-GMR shunt 失效
标题翻译：制造具有非GMR分路的磁头的方法
公开(公告)号：US08136227B2
公开(公告)日：2012-03-20
申请号：US11247081
申请日：2005-10-11
申请人： Michael Feldbaum , Quang Le , Edward H. Lee , Neil L. Robertson , Charles G. Seegel, III
发明人： Michael Feldbaum , Quang Le , Edward H. Lee , Neil L. Robertson , Charles G. Seegel, III
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/1278 , G11B5/3106 , G11B5/3133 , G11B5/3967 , G11B5/40 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A magnetic head having non-GMR shunt for perpendicular recording and method for making magnetic head having non-GMR shunt for perpendicular recording is disclosed. A shunt is provided for shunting charge from a read sensor. The shunt is formed co-planar with the read sensor and is fabricated using non-GMR materials.
摘要翻译：公开了一种具有用于垂直记录的非GMR分路的磁头和用于制造具有用于垂直记录的非GMR分路的磁头的方法。提供分流器用于从读取传感器分流电荷。分流器与读取传感器形成共面并且使用非GMR材料制造。

10. 发明授权

US07969684B2 Write head design and method for reducing adjacent track interference at very narrow track widths 有权
标题翻译：用于在非常窄的轨道宽度上减少相邻轨道干扰的写头设计和方法
公开(公告)号：US07969684B2
公开(公告)日：2011-06-28
申请号：US11391942
申请日：2006-03-28
申请人： Quang Le , Jui-Lung Li
发明人： Quang Le , Jui-Lung Li
IPC分类号： G11B5/127 , G11B5/11
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/315 , G11B5/3163
摘要： A perpendicular write head having a wrap around trailing shield for reducing stray field writing and adjacent track interference. The trailing shield is notched, having an un-notched portion directly behind (trailing) the write pole and first and second notched portions that extend laterally to either side. The un-notched portion of the trailing shield is located adjacent to the trailing edge of the write pole and is separated from the trailing edge of the write pole by a trailing shield notch. The notched portions are separated from the trailing edge of the write gap by a notch depth, measured along the trailing direction, the notch depth as measured in the trailing direction being larger than the trailing shield distance. The notch depth as measured in the trailing direction is preferably 25-50 nm larger than the trailing shield gap distance.
摘要翻译：垂直写头，其具有围绕后屏蔽的卷绕，用于减少杂散场写入和相邻轨道干涉。后屏蔽被切口，具有直写在后面（后面）写入极的未切口部分，以及横向延伸到任一侧的第一和第二切口部分。后屏蔽的未切口部分位于与写极的后缘相邻并且通过后屏蔽切口与写极的后缘分离。切口部分从写入间隙的后缘与沿着拖尾方向测量的切口深度分开，在后沿方向上测量的切口深度大于尾部屏蔽距离。在拖尾方向上测量的凹口深度优选比后屏蔽间隙距离大25-50nm。

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