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51. 发明授权

US08679894B2 Low temperature deposition of phase change memory materials 失效
公开(公告)号：US08679894B2
公开(公告)日：2014-03-25
申请号：US13610928
申请日：2012-09-12
申请人： Jeffrey F. Roeder , Thomas H. Baum , Bryan C. Hendrix , Gregory T. Stauf , Chongying Xu , William Hunks , Tianniu Chen , Matthias Stender
发明人： Jeffrey F. Roeder , Thomas H. Baum , Bryan C. Hendrix , Gregory T. Stauf , Chongying Xu , William Hunks , Tianniu Chen , Matthias Stender
IPC分类号： H01L51/40
CPC分类号： H01L51/0002 , C07F7/30 , C23C16/305 , C23C16/45553
摘要： A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

52. 发明授权

US08501976B2 Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material 有权
公开(公告)号：US08501976B2
公开(公告)日：2013-08-06
申请号：US12978393
申请日：2010-12-23
申请人： Thomas H. Baum
发明人： Thomas H. Baum
IPC分类号： C07C49/92
CPC分类号： C07C49/92 , C04B35/491 , C04B2235/441 , C04B2235/449 , C04B2235/963 , C07F7/003 , C23C16/409 , H01G4/1245 , H01G4/33 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

53. 发明申请

US20130125999A1 ENDPOINT DETERMINATION FOR CAPILLARY-ASSISTED FLOW CONTROL 有权
标题翻译：毛细管理流量控制的终点确定
公开(公告)号：US20130125999A1
公开(公告)日：2013-05-23
申请号：US13704612
申请日：2011-06-18
申请人： Joseph D. Sweeney , Anthony M. Avila , Michael J. Wodjenski , Joseph R. Despres , Thomas H. Baum
发明人： Joseph D. Sweeney , Anthony M. Avila , Michael J. Wodjenski , Joseph R. Despres , Thomas H. Baum
IPC分类号： F17D3/00
CPC分类号： F17D3/01 , F17D3/00 , G05D7/0635 , H01J37/3171 , H01J2237/006 , H01J2237/30466 , H01L21/67017 , H01L21/67253 , Y10T137/0324 , Y10T137/86389
摘要： Apparatus and method for determining endpoint of a fluid supply vessel in which fluid flow is controlled through a flow passage disposed in an interior volume of the fluid supply vessel with a static flow restricting device and a selectively actuatable valve element upon establishing fluid flow. The endpoint determination can be employed to terminate fluid supply from the fluid supply vessel and/or to switch from a fluid-depleted supply vessel to a fresh vessel for continuity or renewal of fluid supply operation. The apparatus and method are suitable for use with fluidutilizing apparatus such as ion implanters.
摘要翻译：用于确定流体供应容器的端点的装置和方法，其中通过设置在流体供应容器的内部容积中的流动通道具有静态流动限制装置和在建立流体流动时可选择性致动的阀元件来控制流体流动。端点确定可以用于终止从流体供应容器供应的流体和/或从流体耗尽的供应容器切换到新鲜的容器，以便连续或更新流体供应操作。该设备和方法适用于离子注入机等流体化处理装置。

54. 发明申请

US20130005078A1 LOW TEMPERATURE DEPOSITION OF PHASE CHANGE MEMORY MATERIALS 失效
标题翻译：相变记忆材料的低温沉积
公开(公告)号：US20130005078A1
公开(公告)日：2013-01-03
申请号：US13610928
申请日：2012-09-12
申请人： Jeffrey F. Roeder , Thomas H. Baum , Bryan C. Hendrix , Gregory T. Stauf , Chongying Xu , William Hunks , Tianniu Chen , Matthias Stender
发明人： Jeffrey F. Roeder , Thomas H. Baum , Bryan C. Hendrix , Gregory T. Stauf , Chongying Xu , William Hunks , Tianniu Chen , Matthias Stender
IPC分类号： H01L51/30
CPC分类号： H01L51/0002 , C07F7/30 , C23C16/305 , C23C16/45553
摘要： A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.
摘要翻译：在基板上形成相变记忆材料的系统和方法，其中在温度低于350℃的条件下，在产生硫属元素化合物的沉积的条件下，在相变存储硫族化合物的前体与基板接触的基板上，其接触通过化学气相沉积或原子层沉积进行。描述了各种碲，锗和锗 - 碲前体，其可用于在基底上形成GST相变记忆膜。

55. 发明授权

US08288198B2 Low temperature deposition of phase change memory materials 有权
标题翻译：相变记忆材料的低温沉积
公开(公告)号：US08288198B2
公开(公告)日：2012-10-16
申请号：US12300459
申请日：2007-03-12
申请人： Jeffrey F. Roeder , Thomas H. Baum , Bryan C. Hendrix , Gregory T. Stauf , Chongying Xu , William Hunks , Tianniu Chen , Matthias Stender
发明人： Jeffrey F. Roeder , Thomas H. Baum , Bryan C. Hendrix , Gregory T. Stauf , Chongying Xu , William Hunks , Tianniu Chen , Matthias Stender
IPC分类号： H01L51/40
CPC分类号： H01L51/0002 , C07F7/30 , C23C16/305 , C23C16/45553
摘要： A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C. with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.
摘要翻译：一种用于在基板上形成相变记忆材料的系统和方法，其中在温度低于350℃的条件下，在产生硫属化物合金沉积的条件下，在温度低于350℃的条件下，基板与相变存储器硫族化合物的前体接触，通过化学气相沉积或原子层沉积进行接触。描述了各种碲，锗和锗 - 碲前体，其可用于在基底上形成GST相变记忆膜。

56. 发明申请

US20120138631A1 FLUID PROCESSING SYSTEMS AND METHODS 有权
标题翻译：流体加工系统和方法
公开(公告)号：US20120138631A1
公开(公告)日：2012-06-07
申请号：US13375462
申请日：2010-06-08
申请人： Steven M. Lurcott , John E.Q. Hughes , Peter Wrschka , Thomas H. Baum , Donald D. Ware , Peng Zou
发明人： Steven M. Lurcott , John E.Q. Hughes , Peter Wrschka , Thomas H. Baum , Donald D. Ware , Peng Zou
IPC分类号： B67D7/72 , B67D7/08 , B67D7/74 , B65B3/14 , B65B3/16
CPC分类号： B01F15/0203 , B01F3/0861 , B01F15/0258 , B01F2003/0896 , B65B3/14 , B67D7/025 , B67D7/0261 , B67D7/0283 , B67D7/741
摘要： Systems and methods for delivering fluid-containing feed materials to process equipment are disclosed. A liner-based pressure dispensing vessel is subjected to filling by application of vacuum between the liner and overpack. Multiple feed material flow controllers of different calibrated flow ranges may be selectively operated in parallel for a single feed material. Feed material blending and testing for scale-up may be performed with feed materials supplied by multiple liner-based pressure dispensing containers. A gravimetric system may be used to determine concentration of at least one component of a multi-component solution or mixture.
摘要翻译：公开了用于将含流体的进料传送到加工设备的系统和方法。基于衬管的压力分配容器通过在衬套和外包装之间施加真空而进行填充。不同校准流量范围的多个进料流量控制器可以针对单个进料进行选择性并行操作。用于放大的进料混合和测试可以通过由多个基于衬管的压力分配容器供应的进料进行。重量分析系统可用于测定多组分溶液或混合物中至少一种组分的浓度。

57. 发明申请

US20120131990A1 FLUID MONITORING APPARATUS 有权
标题翻译：流体监测装置
公开(公告)号：US20120131990A1
公开(公告)日：2012-05-31
申请号：US13381332
申请日：2010-06-23
申请人： Thomas H. Baum , Ing-Shin Barry Chen , Richard D. Chism
发明人： Thomas H. Baum , Ing-Shin Barry Chen , Richard D. Chism
IPC分类号： G01N11/00
CPC分类号： G01D11/245
摘要： A fluid monitoring apparatus, including a circuitry housing containing circuitry for processing fluid sensing signals and responsively transmitting an output, with a sensor assembly adapted for mechanical and electrical coupling to the circuitry housing. The sensor assembly includes at least one sensing member arranged to respond to a fluid species of interest in the monitored fluid, for generation of an output. The apparatus includes at least one of (A) a printed circuit board adapted to engage the circuitry housing and to mechanically couple to the sensor assembly, (B) the sensor assembly including a base and sensing element removably connected to the base by press-fit coupling elements, and (C) the sensor assembly including a base and a sensing filament connected thereto, and a filament guard to protectively circumscribe the sensing filament.
摘要翻译：一种流体监测装置，包括用于处理流体感测信号并且响应地传输输出的电路壳体，其具有适于机械和电耦合到电路壳体的传感器组件。传感器组件包括至少一个感测构件，其被布置成响应被监视流体中感兴趣的流体种类，以产生输出。该装置包括以下中的至少一个：（A）适于接合电路外壳并机械地耦合到传感器组件的印刷电路板中的至少一个;（B）传感器组件，包括基座和感测元件，该基座和感测元件通过压配合可移除地连接到基座耦合元件，和（C）传感器组件，其包括基座和连接到其上的感测灯丝，以及灯丝防护罩，用于保护地围绕感测灯丝。

58. 发明申请

US20110263100A1 ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS 有权
标题翻译：用于金属薄膜CVD / ALD的抗反应和锗复合物
公开(公告)号：US20110263100A1
公开(公告)日：2011-10-27
申请号：US13168979
申请日：2011-06-26
申请人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Matthias Stender , Philip S.H. Chen , Gregory T. Stauf , Bryan C. Hendrix
发明人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Matthias Stender , Philip S.H. Chen , Gregory T. Stauf , Bryan C. Hendrix
IPC分类号： H01L21/208
CPC分类号： H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/90 , C07F9/902 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
摘要翻译：描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这些前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造方法。本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

59. 发明授权

US08034407B2 Chemical vapor deposition of high conductivity, adherent thin films of ruthenium 有权
标题翻译：化学气相沉积的高导电性，粘附的钌薄膜
公开(公告)号：US08034407B2
公开(公告)日：2011-10-11
申请号：US11750134
申请日：2007-05-17
申请人： Bryan C. Hendrix , James J. Welch , Steven M. Bilodeau , Jeffrey F. Roeder , Chongying Xu , Thomas H. Baum
发明人： Bryan C. Hendrix , James J. Welch , Steven M. Bilodeau , Jeffrey F. Roeder , Chongying Xu , Thomas H. Baum
IPC分类号： C23C16/00 , C23C16/06
CPC分类号： C23C16/45557 , C23C16/0272 , C23C16/16 , C23C16/18
摘要： A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.
摘要翻译：描述了一种用于沉积具有高导电性和优异的基底附着性的钌薄膜的多步法。该方法包括沉积钌成核层，随后沉积高度导电的钌上层。使用低沉积速率的化学气相沉积（CVD）沉积两层。

60. 发明申请

US20110097478A1 SCALABLE LEAD ZIRCONIUM TITANATE (PZT) THIN FILM MATERIAL AND DEPOSITION METHOD, AND FERROELECTRIC MEMORY DEVICE STRUCTURES COMPRISING SUCH THIN FILM MATERIAL 有权
标题翻译：可拉伸铅钛酸铅（PZT）薄膜材料和沉积方法，以及包含这种薄膜材料的电解存储器件结构
公开(公告)号：US20110097478A1
公开(公告)日：2011-04-28
申请号：US12978393
申请日：2010-12-23
申请人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
发明人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
IPC分类号： H01G4/00 , C23C16/06 , C23C16/448 , C04B35/472
CPC分类号： C07C49/92 , C04B35/491 , C04B2235/441 , C04B2235/449 , C04B2235/963 , C07F7/003 , C23C16/409 , H01G4/1245 , H01G4/33 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).
摘要翻译：一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围的横向尺寸延伸到低至0.15μm。在优选实施例中，对应的电容器面积（即横向缩放）在约104至约10-2μm2的范围内。本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

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