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51. 发明授权

US4236976A Preventing stains on multiple-electroplated articles 失效
标题翻译：防止多层电镀物品上的污渍
公开(公告)号：US4236976A
公开(公告)日：1980-12-02
申请号：US92472
申请日：1979-11-08
申请人： Paul A. Kohl
发明人： Paul A. Kohl
IPC分类号： C25D5/02 , C25D5/34 , C25D5/52
CPC分类号： C25D5/34 , C25D5/02 , C25D5/52
摘要： A method is shown of reducing the incidence of stains on objects, such as electrical contact pins, having two or more electroplated regions. An exemplary embodiment is the case of two gold electroplating operations. After the first gold electroplating operation, the article is passed through a cyanide etching bath. The article is typically then polished, and then plated in a second electroplating operation. The etching bath removes extraneous gold deposits that can cause stains. A typical etching solution is a 0.01 molar concentration of KCN etchant and 0.1 molar KOH or K.sub.3 PO.sub.4 buffer in a water solution, typically applied by spraying.
摘要翻译：示出了减少具有两个或更多个电镀区域的物体上的污渍（例如电接触针）的发生率的方法。一个示例性的实施例是两次镀金操作的情况。在第一次镀金操作之后，将物品通过氰化物蚀刻槽。然后将制品抛光，然后在第二次电镀操作中进行电镀。蚀刻浴去除可能引起污渍的外来金矿床。典型的蚀刻溶液是通常通过喷雾施加的0.01摩尔浓度的KCN蚀刻剂和0.1摩尔KOH或K 3 PO 4缓冲液。

52. 发明授权

US08476096B2 Packaging for micro electro-mechanical systems and methods of fabricating thereof 有权
标题翻译：微机电系统的包装及其制造方法
公开(公告)号：US08476096B2
公开(公告)日：2013-07-02
申请号：US10534956
申请日：2005-03-15
申请人： Paul A. Kohl , Farrokh Ayazi , Paul J. Joseph
发明人： Paul A. Kohl , Farrokh Ayazi , Paul J. Joseph
IPC分类号： H01L21/00
CPC分类号： B81C1/00333 , B81C2201/0108 , B81C2203/0136 , B81C2203/0154 , H01L2224/48247 , H01L2224/49171 , H01L2924/1461 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： Embodiments of the present disclosure provide systems and methods for producing micro electro-mechanical device packages. Briefly described, in architecture, one embodiment of the system, among others, includes a micro electro-mechanical device formed on a substrate layer; and a thermally decomposable sacrificial structure protecting at least a portion of the micro electro-mechanical device, where the sacrificial structure is formed on the substrate layer and surrounds a gas cavity enclosing an active surface of the micro electro-mechanical device. Other systems and methods are also provided.
摘要翻译：本公开的实施例提供了用于生产微机电装置包装的系统和方法。简要描述，在架构中，系统的一个实施例包括形成在基底层上的微电子机械装置; 以及可热分解的牺牲结构，其保护所述微机电装置的至少一部分，其中所述牺牲结构形成在所述基底层上并且围绕包围所述微机电装置的有效表面的气体腔。还提供了其他系统和方法。

53. 发明授权

US08405170B2 Packaging for micro electro-mechanical systems and methods of fabricating thereof 有权
公开(公告)号：US08405170B2
公开(公告)日：2013-03-26
申请号：US12797649
申请日：2010-06-10
申请人： Paul A. Kohl , Farrokh Ayazi , Paul J. Joseph
发明人： Paul A. Kohl , Farrokh Ayazi , Paul J. Joseph
IPC分类号： H01L29/84
CPC分类号： B81C1/00333 , B81C2201/0108 , B81C2203/0136 , B81C2203/0154 , H01L2224/48247 , H01L2224/49171 , H01L2924/1461 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： Embodiments of the present disclosure provide systems and methods for producing micro electro-mechanical device packages. Briefly described, in architecture, one embodiment of the system, among others, includes a micro electro-mechanical device formed on a substrate layer; and a thermally decomposable sacrificial structure protecting at least a portion of the micro electro-mechanical device, where the sacrificial structure is formed on the substrate layer and surrounds a gas cavity enclosing an active surface of the micro electro-mechanical device. Other systems and methods are also provided.

54. 发明申请

US20120238648A1 ANION EXCHANGE POLYELECTROLYTES 有权
标题翻译：阴离子交换聚电解质
公开(公告)号：US20120238648A1
公开(公告)日：2012-09-20
申请号：US13497177
申请日：2010-09-24
申请人： Junfeng Zhou , Paul A. Kohl , Murat Unlu
发明人： Junfeng Zhou , Paul A. Kohl , Murat Unlu
IPC分类号： B01J41/12
CPC分类号： B01J49/00 , C08G59/3218 , C08J5/2262 , C08L63/00 , C08L81/06 , H01M8/083 , H01M8/1027 , H01M8/103 , H01M8/1039 , Y02E60/521
摘要： Provided according to some embodiments of the invention are anion exchange polyelectrolytes that include an at least partially fluorinated polyaromatic polymer backbone; and at least one cationic functional group pendant therefrom. Also provided are anion exchange membranes (AEMs) formed from at least one anion exchange polyelectrolyte according to an embodiment of the invention, and fuel cells including such AEMs.
摘要翻译：根据本发明的一些实施方案提供的是包含至少部分氟化的聚芳族聚合物主链的阴离子交换聚电解质; 和至少一个阳离子官能团。还提供了由根据本发明的一个实施方案的至少一种阴离子交换聚电解质形成的阴离子交换膜（AEM）和包括这种AEM的燃料电池。

55. 发明申请

US20080213650A1 Microstructures and Methods of Fabrication Thereof 审中-公开
标题翻译：微结构及其制作方法
公开(公告)号：US20080213650A1
公开(公告)日：2008-09-04
申请号：US10590264
申请日：2005-02-16
申请人： Paul A. Kohl , Christopher W. Moore , Jun Li
发明人： Paul A. Kohl , Christopher W. Moore , Jun Li
IPC分类号： H01M4/92 , H01M4/90 , H01M8/02 , B05D1/00
CPC分类号： H01M8/1044 , H01M4/881 , H01M4/8814 , H01M4/8817 , H01M4/8825 , H01M4/8871 , H01M4/8892 , H01M8/1004 , H01M8/1011 , H01M8/1023 , H01M8/103 , H01M8/1039 , H01M8/1097 , H01M2300/0094 , Y02E60/523 , Y02P70/56
摘要： Fuel cells, fuel cell membranes, micro-fuel cells, and methods of fabricating each, are disclosed. One exemplary fuel cell, among others, includes a membrane including a material such as organic conducting materials and inorganic conducting materials, and combinations thereof. The membrane has a thickness of about 0.01 to 10 μm, and has an area resistivity of about 0.1 to 1000 ohms cm2.
摘要翻译：公开了燃料电池，燃料电池膜，微型燃料电池及其制造方法。一个示例性的燃料电池尤其包括包括诸如有机导电材料和无机导电材料的材料的膜及其组合。膜具有约0.01至10μm的厚度，并且具有约0.1至1000欧姆/平方厘米的面积电阻率。

56. 发明申请

US20080136572A1 Micro-electromechanical switched tunable inductor 有权
标题翻译：微机电开关可调谐电感
公开(公告)号：US20080136572A1
公开(公告)日：2008-06-12
申请号：US11999527
申请日：2007-12-06
申请人： Farrokh Ayazi , Mina Raieszadeh , Paul A. Kohl
发明人： Farrokh Ayazi , Mina Raieszadeh , Paul A. Kohl
IPC分类号： H01F21/00 , H01F27/02
CPC分类号： H01F17/0006 , H01F21/12 , H01F27/022 , H01F2017/0086 , H01F2021/125
摘要： Disclosed is an integrated tunable inductor having mutual micromachined inductances fabricated in close proximity to a tunable inductor that is switched in and out by micromechanical ohmic switches to change the inductance of the integrated tunable inductor. To achieve a large tuning range and high quality factor, silver is preferably used as the structural material to co-fabricate the inductors and micromachined switches, and silicon is selectively removed from the backside of the substrate. Using this method, exemplary tuning of 47% at 6 GHz is achievable for a 1.1 nH silver inductor fabricated on a low-loss polymer membrane. The effect of the quality factor on the tuning characteristic of the integrated inductor is evaluated by comparing the measured result of substantially identical inductors fabricated on various substrates. To maintain the quality factor of the silver inductor, the device may be encapsulated using a low-cost wafer-level polymer packaging technique.
摘要翻译：公开了一种集成的可调电感器，其具有相互微机电感应，其紧密接近可调电感器，该可调谐电感器由微机械欧姆开关导入和切出以改变集成可调电感器的电感。为了实现大的调谐范围和高品质因素，优选使用银作为用于共同制造电感器和微加工开关的结构材料，并且硅从衬底的背面选择性地去除。使用这种方法，在低损耗聚合物膜上制造的1.1nH银电感器可以实现在6GHz下47％的示例性调谐。通过比较在各种衬底上制造的基本相同的电感器的测量结果来评估质量因子对集成电感器的调谐特性的影响。为了保持银电感器的品质因素，可以使用低成本晶圆级聚合物封装技术封装器件。

57. 发明授权

US06509386B1 Porous insulating compounds and method for making same 失效
标题翻译：多孔绝缘化合物及其制备方法
公开(公告)号：US06509386B1
公开(公告)日：2003-01-21
申请号：US09544638
申请日：2000-04-05
申请人： Paul A. Kohl
发明人： Paul A. Kohl
IPC分类号： C08J902
CPC分类号： H01L21/762 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3121 , H01L21/316 , H01L21/31695 , H01L21/3185 , H01L23/49894 , H01L23/5222 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a porous insulating composition comprising the steps of (A) providing at least one organic sacrificial material/dielectric material composition comprising at least one organic sacrificial material and at least one dielectric material; and (B) removing the at least one organic sacrificial material in the at least one organic sacrificial material/dielectric material composition, in order to generate pores in the at least one dielectric material. Also disclosed is a composition useful in making a porous insulator, comprising a heat-activated, pore-forming, sacrificial material; and a dielectric material. Alternatively, the composition useful in making a porous insulator, comprises at least one pore-forming, organic sacrificial material; and at least one dielectric material, wherein the at least one pore-forming, material is a norbornene-type polymer.
摘要翻译：一种形成多孔绝缘组合物的方法，包括以下步骤：（A）提供至少一种包含至少一种有机牺牲材料和至少一种介电材料的有机牺牲材料/介电材料组合物; 和（B）去除所述至少一种有机牺牲材料/电介质材料组合物中的至少一种有机牺牲材料，以在所述至少一种电介质材料中产生孔。还公开了可用于制造多孔绝缘体的组合物，其包含热活化的成孔牺牲材料; 和电介质材料。或者，可用于制备多孔绝缘体的组合物包括至少一种成孔有机牺牲材料; 和至少一种介电材料，其中所述至少一种成孔材料是降冰片烯型聚合物。

58. 发明授权

US5468688A Process for the low temperature creation of nitride films on semiconductors 失效
标题翻译：半导体上氮化物薄膜的低温生成工艺
公开(公告)号：US5468688A
公开(公告)日：1995-11-21
申请号：US146876
申请日：1993-11-01
申请人： Paul A. Kohl , Kirkland W. Vogt
发明人： Paul A. Kohl , Kirkland W. Vogt
IPC分类号： H01L21/318 , H01L21/18
CPC分类号： H01L21/318
摘要： Processes (30, 40) have been developed for forming nitride films (35, 45, 37, 47) at low temperatures and at near atmospheric pressure on sample materials 12, including metals, for example, Co, Cr, Fe, Mo, Si, Ta, Ti, V, and W, and including group IV and group III-V semiconductors, for example, Si and GaAs, respectively. The processes (30, 40) are performed using a reaction system (10) which comprises a reactor (11) enclosed within a dry box (13), a hydrazine bubbler (18), gas sources (14a-14e), and an optional gas disposal system (22) for disposing of exhaust from the reactor (11). The surface of the sample material (12) is initially cleaned to remove any oxides and carbon compounds. The surface is then maintained at a temperature between 0.degree. and 400.degree. C. and at a pressure between 0.001 and 10,000 Torr. The surface is treated with hydrazine by introducing the hydrazine in a gaseous phase over the surface. Nitrogen reactants are formed by the breakdown of the hydrazine, and the nitrogen reactants combine with and consume a portion of the sample material 12 to form a nitride film (35, 45). A thicker nitride film (37, 47) is created by the chemical vapor deposition of boron nitride over the thin nitride film (35, 45).
摘要翻译：已经开发了用于在低温和接近大气压下在样品材料12上形成氮化物膜（35,45,37,47）的工艺（30,40），包括金属，例如Co，Cr，Fe，Mo，Si ，Ta，Ti，V和W，并且分别包括IV族和III-V族半导体，例如Si和GaAs。使用反应系统（10）进行方法（30,40），反应系统（10）包括封闭在干燥箱（13）内的反应器（11），肼起泡器（18），气体源（14a-14e）和可选的气体处理系统（22），用于处理来自反应器（11）的废气。最初清洗样品材料（12）的表面以除去任何氧化物和碳化合物。然后将表面保持在0℃至400℃的温度和0.001至10,000托之间的压力下。通过在表面上引入气相中的肼来处理表面。通过肼的分解形成氮反应物，氮反应物与样品材料12的一部分结合并消耗，以形成氮化物膜（35,45）。通过氮化氮在氮化物薄膜（35,45）上的化学气相沉积来形成较厚的氮化物膜（37,47）。

59. 发明授权

US5348627A Process and system for the photoelectrochemical etching of silicon in an anhydrous environment 失效
标题翻译：在无水环境下对硅进行光电化学蚀刻的工艺和系统
公开(公告)号：US5348627A
公开(公告)日：1994-09-20
申请号：US61090
申请日：1993-05-12
申请人： Eric K. Propst , Paul A. Kohl
发明人： Eric K. Propst , Paul A. Kohl
IPC分类号： C25F3/12 , C25F3/14 , H01L21/3063 , B23H3/00
CPC分类号： H01L21/3063 , C25F3/12 , C25F3/14
摘要： The photoelectrochemical oxidation and dissolution of silicon (Si) is performed in the absence of water and oxygen. Etch rates and photocurrents in an anhydrous HF-acetonitrile (MeCN) solution are directly proportional to light intensity up to at least 600 mW/cm.sup.2, producing a spatially selective etch rate of greater than 4 .mu.m/min. Four electron transfer reactions per silicon molecule occur with a quantum yield greater than 3.3 due to electron injection from high energy reaction intermediates. Further, the electrochemical oxidation of p-doped silicon in HF-MeCN results in the formation of porous silicon which electroluminescence in an aqueous solution. In an aprotic electrolyte, where tetrabutylammonium tetrafluoroborate (TBAFB) is used as both the supporting electrolyte and source of fluoride in MeCN, photo-induced etching of n-doped silicon occurs at quantum efficiency of 1.9. This indicates that the oxidation and dissolution mechanism of Si in MeCN can occur without protons.
摘要翻译：硅（Si）的光电化学氧化和溶解在没有水和氧的情况下进行。在无水HF-乙腈（MeCN）溶液中的蚀刻速率和光电流与高达至少600mW / cm 2的光强度成正比，产生大于4μm/ min的空间选择性蚀刻速率。由于高能反应中间体的电子注入，每硅分子发生四个电子转移反应，其量子产率大于3.3。此外，p-doped硅在HF-MeCN中的电化学氧化导致在水溶液中电致发光的多孔硅的形成。在非质子电解质中，使用四丁基铵四氟硼酸盐（TBAFB）作为MeCN中的支持电解质和氟化物源，对n掺杂硅的光致蚀刻以量子效率为1.9发生。这表明Si在MeCN中的氧化和溶解机理不会发生质子。

60. 发明授权

US4622114A Process of producing devices with photoelectrochemically produced gratings 失效
标题翻译：用光电化学生成的光栅制造器件的过程
公开(公告)号：US4622114A
公开(公告)日：1986-11-11
申请号：US684022
申请日：1984-12-20
申请人： Alastair M. Glass , Paul A. Kohl , Richard M. Lum , Frederick W. Ostermayer, Jr.
发明人： Alastair M. Glass , Paul A. Kohl , Richard M. Lum , Frederick W. Ostermayer, Jr.
IPC分类号： C25F3/12 , G02B6/124 , G02B6/34 , H01L21/3063 , H01S5/12 , H01S5/40
CPC分类号： H01S5/12 , C25F3/12 , G02B6/124 , H01L21/30635 , H01S5/1231 , H01S5/4025 , H01S5/4062 , H01S5/4087
摘要： A photoelectrochemical etching process is described for producing gratings in various semiconductors. Because this is a direct, single step process, extreme uniformity is obtained over a wide area. The procedure is particularly useful for mode reflection in distributed feedback lasers.
摘要翻译：描述了用于在各种半导体中制造光栅的光电化学蚀刻工艺。因为这是一个直接的，单步的过程，在广泛的领域获得了极大的均匀性。该过程对分布式反馈激光器中的模式反射特别有用。

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