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1. 发明授权

US4482442A Photoelectrochemical etching of n-type gallium arsenide 失效
标题翻译： n型砷化镓的光电化学蚀刻
公开(公告)号：US4482442A
公开(公告)日：1984-11-13
申请号：US544993
申请日：1983-10-24
申请人： Paul A. Kohl , Frederick W. Ostermayer, Jr.
发明人： Paul A. Kohl , Frederick W. Ostermayer, Jr.
IPC分类号： C25F3/12 , C25F3/14 , H01L21/3063
CPC分类号： C25F3/12 , C25F3/14 , H01L21/30635 , Y10T428/21 , Y10T428/31504
摘要： A process is described for photoelectrochemically etching n-type gallium arsenide and closely related compound semiconductors such as gallium aluminum arsenide and gallium arsenide phosphide. Such a process is advantageous because the etching is confined to where light is incident to the surface of the semiconductor. In addition, the shape of the configuration etched out of the semiconductor can be controlled by the light incident on the surface of the semiconductor. For example, undercutting can be minimized by use of parallel rays incident on the surface of the semiconductor to be etched.
摘要翻译：描述了用于光电化学蚀刻n型砷化镓和紧密相关的化合物半导体如镓砷化镓和砷化镓磷化物的方法。这种方法是有利的，因为蚀刻被限制在光入射到半导体的表面的地方。此外，可以通过入射在半导体表面上的光来控制从半导体中蚀刻出的构造的形状。例如，可以通过使用入射在要蚀刻的半导体的表面上的平行光线来最小化底切。

2. 发明授权

US4278353A Optical inspection of gold surfaces 失效
标题翻译：金表面的光学检查
公开(公告)号：US4278353A
公开(公告)日：1981-07-14
申请号：US139172
申请日：1980-04-11
申请人： Frederick W. Ostermayer, Jr.
发明人： Frederick W. Ostermayer, Jr.
IPC分类号： G01N21/47 , G01J3/48 , G01N21/55
CPC分类号： G01N21/474
摘要： Gold plated surfaces are inspected by means of reflected light in the wavelength range of 450 to 575 nanometers to give a sensitive indication of surface conditions. This test automates the visual inspection for "brown gold" and is advantageously used in continuous strip gold plating operations. The technique may be used as a quality control check or as a process control to correct non-optimum process parameters that lead to degradation of gold surface conditions. In a preferred embodiment, the reflected light from the surface being inspected is compared with light reflected from a reference surface. Alternately, a separate wavelength band, typically 700 to 800 nanometers, is reflected from the surface being inspected and compared to the reflected light in the 450 to 575 nanometer wavelength band.
摘要翻译：通过在450至575纳米的波长范围内的反射光检查镀金表面，以给出表面条件的敏感指示。该测试自动化“棕色金”的目视检查，有利地用于连续带状镀金操作。该技术可以用作质量控制检查或作为过程控制来校正导致金表面状况降解的非最佳工艺参数。在优选实施例中，将来自被检查表面的反射光与从参考表面反射的光进行比较。或者，通常为700至800纳米的单独波长带从被检测的表面反射，并与450至575纳米波长带中的反射光进行比较。

3. 发明授权

US4415414A Etching of optical surfaces 失效
标题翻译：蚀刻光学表面
公开(公告)号：US4415414A
公开(公告)日：1983-11-15
申请号：US416473
申请日：1982-09-10
申请人： Randolph H. Burton , Paul A. Kohl , Frederick W. Ostermayer, Jr.
发明人： Randolph H. Burton , Paul A. Kohl , Frederick W. Ostermayer, Jr.
IPC分类号： C30B33/00 , C25F3/12 , C25F3/14 , C30B29/40 , C30B33/10 , G02B3/00 , H01L21/3063 , H01L21/465 , H01L33/00
CPC分类号： H01L21/465 , C25F3/12 , C25F3/14 , H01L21/30635
摘要： An etching process is described which can etch geometrical shapes on the surface of an n-type or intrinsic compound semiconductor and yield surfaces of optical quality without further processing. The etching process is an electrochemical process where etching is proportional to light intensity. The process involves applying a potential to the compound semiconductor while immersed in an electrolytic solution and irradiating the surface to be etched with light in a certain energy range. The electrolytic solution contains hydrofluoric acid. The distribution of light intensity and ray direction is selected to produce the desired geometrical shape. Particularly advantageous is that the surfaces produced are of optical quality. For example, lenses produced by the etching process exhibit surfaces of optical quality. Further, the process can be carried out on all the lenses on a wafer simultaneously without attention to individual devices. This is highly desirable economically. Also, the lenses produced are integral parts of the light emitting diode.
摘要翻译：描述了可以蚀刻n型或本征化合物半导体的表面上的几何形状并产生光学质量的表面而没有进一步处理的蚀刻工艺。蚀刻过程是电化学过程，其中蚀刻与光强度成比例。该方法包括在化合物半导体浸入电解液中时施加电位，并在一定能量范围内用光照射被蚀刻表面。电解液含有氢氟酸。选择光强度和射线方向的分布以产生所需的几何形状。特别有利的是所生产的表面具有光学质量。例如，通过蚀刻工艺产生的透镜表现出光学质量的表面。此外，可以同时对晶片上的所有透镜进行该处理，而不关注各个器件。这在经济上是非常理想的。而且，所生产的镜片也是发光二极管的组成部分。

4. 发明授权

US4389291A Photoelectrochemical processing of InP-type devices 失效
标题翻译： InP型器件的光电化学处理
公开(公告)号：US4389291A
公开(公告)日：1983-06-21
申请号：US275245
申请日：1981-06-19
申请人： Paul A. Kohl , Frederick W. Ostermayer, Jr. , Catherine Wolowodiuk
发明人： Paul A. Kohl , Frederick W. Ostermayer, Jr. , Catherine Wolowodiuk
IPC分类号： C25F3/12 , C25F3/14 , H01L21/3063
CPC分类号： C25F3/12 , C25F3/14 , H01L21/30635 , Y10T428/22 , Y10T428/31504
摘要： A process is described for photoelectrochemically etching n-type indium phosphide and closely related compound semiconductors such as indium gallium arsenide and indium gallium arsenide phosphide. Such a process is advantageous because the etching is confined to where light is incident to the surface of the semiconductor. In addition, the shape of the configuration etched out of the semiconductor can be controlled by the light incident on the surface of the semiconductor. For example, undercutting can be minimized by use of parallel rays incident on the surface of the semiconductor to be etched.
摘要翻译：描述了用于光电化学蚀刻n型磷化铟和紧密相关的化合物半导体如砷化铟镓和砷化镓镓磷化物的方法。这种方法是有利的，因为蚀刻被限制在光入射到半导体的表面的地方。此外，可以通过入射在半导体表面上的光来控制从半导体中蚀刻出的构造的形状。例如，可以通过使用入射在要蚀刻的半导体的表面上的平行光线来最小化底切。

5. 发明授权

US4689125A Fabrication of cleaved semiconductor lasers 失效
标题翻译：切割半导体激光器的制造
公开(公告)号：US4689125A
公开(公告)日：1987-08-25
申请号：US869802
申请日：1986-05-28
申请人： Charles A. Burrus, Jr. , Paul A. Kohl , Tien P. Lee , Frederick W. Ostermayer, Jr.
发明人： Charles A. Burrus, Jr. , Paul A. Kohl , Tien P. Lee , Frederick W. Ostermayer, Jr.
IPC分类号： H01L21/302 , H01L21/3063 , H01L21/465 , H01L33/00 , H01L33/28 , H01L33/30 , H01S5/02 , H01S5/10 , C25F3/12
CPC分类号： H01L33/28 , H01L21/30635 , H01L21/465 , H01L33/005 , H01L33/30 , H01S5/0201 , H01S5/0202 , H01S5/0203 , H01S5/1039
摘要： A process is described for making semiconductor lasers with cleaved facets for end mirrors. The process involves electrochemically photoetching slots with deep, narrow cross-sections in a wafer and applying stress to cleave the wafer in the desired place. Extremely short and reproducible semiconductor lasers can be made by this procedure (less than 50 or even 25 .mu.m) which yields extremely useful semiconductor lasers particularly for communication applications. Also, the procedure requires a minimum of skill to produce excellent quality cleaved semiconductor lasers (including short-length lasers) with high yields.
摘要翻译：描述了用于制造具有用于端镜的切割面的半导体激光器的工艺。该方法涉及在晶片中电化学光刻槽，其具有深而窄的横截面，并施加应力以将晶片切割到期望的位置。可以通过这种方法（小于50甚至25微米）制造出非常短且可重复的半导体激光器，其产生非常有用的半导体激光器，特别是用于通信应用。此外，该方法需要最小的技术以产生具有高产率的优质的切割半导体激光器（包括短长度激光器）。

6. 发明授权

US4399004A Photoelectrochemical gold plating process 失效
标题翻译：光电化学镀金工艺
公开(公告)号：US4399004A
公开(公告)日：1983-08-16
申请号：US272517
申请日：1981-06-11
申请人： Reginald R. Buckley , Lucian A. D'Asaro , Paul A. Kohl , Frederick W. Ostermayer, Jr. , Catherine Wolowodiuk
发明人： Reginald R. Buckley , Lucian A. D'Asaro , Paul A. Kohl , Frederick W. Ostermayer, Jr. , Catherine Wolowodiuk
IPC分类号： H01L21/28 , C25D3/48 , H01L21/00 , H01L21/288 , C25D5/02 , C25D7/12
CPC分类号： C25D3/48 , H01L21/288
摘要： A process is described for plating gold on metal surfaces electrically attached to a compound semiconductor. The procedure is particularly valuable where gold is to be in small holes or crevices in semiconductor structure since electroplating on the semiconductor surface is avoided. The process is useful for providing low inductance electrical connection to various parts of semiconductor devices such as to the source in gallium arsenide field-effect transistors.
摘要翻译：描述了用于在电连接到化合物半导体的金属表面上镀金的方法。由于避免了在半导体表面上进行电镀，因此在半导体结构中的小孔或缝隙中金子是特别有价值的。该方法对于提供诸如砷化镓场效应晶体管中的源极的半导体器件的各个部分的低电感电连接是有用的。

7. 发明授权

US5413884A Grating fabrication using electron beam lithography 失效
标题翻译：使用电子束光刻的光栅制作
公开(公告)号：US5413884A
公开(公告)日：1995-05-09
申请号：US989690
申请日：1992-12-14
申请人： Thomas L. Koch , Frederick W. Ostermayer, Jr. , Donald M. Tennant , Jean-Marc Verdiell
发明人： Thomas L. Koch , Frederick W. Ostermayer, Jr. , Donald M. Tennant , Jean-Marc Verdiell
IPC分类号： G02B5/18 , G02B6/12 , G02B6/122 , G02B6/124 , G03F7/00 , G03F7/20 , G03F9/00
CPC分类号： G03F7/7035 , G02B6/12007 , G02B6/124 , G03F7/001 , G03F7/2059 , G03F7/704
摘要： A technique is disclosed for utilizing direct-write electron-beam photolithography and holographic optical exposure to form gratings in optoelectronic structures. The direct-write e-beam process is used to form rectangular grating teeth in a mask substrate, where the mask is then used as a phase mask to transfer the pattern to the optoelectronic device. Advantageously, the utilization of a direct write e-beam technique to form the grating pattern on the photomask allows for the formation of any desired number and location of abrupt phase shifts, multiple grating pitches, alignment fiducials, and any other desired features. Therefore, a single exposure of the direct write e-beam mask allows for a plurality of different grating patterns to be simultaneously printed.
摘要翻译：公开了一种利用直写式电子束光刻和全息光学曝光在光电结构中形成光栅的技术。直接写入电子束处理用于在掩模衬底中形成矩形光栅齿，其中掩模然后用作相位掩模以将图案转移到光电子器件。有利地，利用直接写入电子束技术在光掩模上形成光栅图案允许形成任何期望数量和位置的突变相移，多个光栅间距，对准基准以及任何其它期望的特征。因此，直接写入电子束掩模的单次曝光允许同时打印多个不同的光栅图案。

8. 发明授权

US4391683A Mask structures for photoetching procedures 失效
标题翻译：光刻程序的掩模结构
公开(公告)号：US4391683A
公开(公告)日：1983-07-05
申请号：US416495
申请日：1982-09-10
申请人： Reginald R. Buckley , Frederick W. Ostermayer, Jr.
发明人： Reginald R. Buckley , Frederick W. Ostermayer, Jr.
IPC分类号： C25F3/12 , C25F3/14 , G03F1/00 , H01L21/3063 , H01L21/308 , H01L21/465 , H01L21/467 , H01L33/00
CPC分类号： H01L21/467 , C25F3/12 , C25F3/14 , G03F1/50 , H01L21/30635 , H01L21/308 , H01L21/3086 , H01L21/465
摘要： A mask structure is described which is extremely useful for use in various photoetching processes where etching rate depends on radiation intensity on the etched surface. Such processes are extremely useful for producing various geometrical patterns on surfaces. The mask is made up of alternate areas of opaque and transparent areas which when introduced into an optical imaging system ordinary aberrations produce a pattern on the surface to be etched with the desired continuous spatial variation of radiation intensity. A particular advantage of the mask structure is that it can easily be made using an Electron Beam Exposure System. The mask is particularly useful for electrochemical photoetching processes carried out on compound semiconductors. The mask structure is usefully used to photoetch integral lenses on light emitting diodes. This photoetching process produces a variety of lens structures on LED devices with great accuracy. Also, a large array of lens structures are produced simultaneously which is highly advantageous economically.
摘要翻译：描述了掩模结构，其对于用于各种光刻工艺非常有用，其中蚀刻速率取决于蚀刻表面上的辐射强度。这些方法对于在表面上产生各种几何图案非常有用。掩模由不透明和透明区域的交替区域组成，当被引入到光学成像系统中时，普通像差将在要被蚀刻的表面上以期望的辐射强度的连续空间变化产生图案。掩模结构的一个特别的优点是它可以容易地使用电子束曝光系统。掩模对于在化合物半导体上进行的电化学光刻工艺特别有用。掩模结构有用地用于在发光二极管上拍摄整体透镜。这种光刻处理在LED器件上产生各种各样的透镜结构，精度很高。此外，同时产生大量的透镜结构，这在经济上是非常有利的。

9. 发明授权

US4622114A Process of producing devices with photoelectrochemically produced gratings 失效
标题翻译：用光电化学生成的光栅制造器件的过程
公开(公告)号：US4622114A
公开(公告)日：1986-11-11
申请号：US684022
申请日：1984-12-20
申请人： Alastair M. Glass , Paul A. Kohl , Richard M. Lum , Frederick W. Ostermayer, Jr.
发明人： Alastair M. Glass , Paul A. Kohl , Richard M. Lum , Frederick W. Ostermayer, Jr.
IPC分类号： C25F3/12 , G02B6/124 , G02B6/34 , H01L21/3063 , H01S5/12 , H01S5/40
CPC分类号： H01S5/12 , C25F3/12 , G02B6/124 , H01L21/30635 , H01S5/1231 , H01S5/4025 , H01S5/4062 , H01S5/4087
摘要： A photoelectrochemical etching process is described for producing gratings in various semiconductors. Because this is a direct, single step process, extreme uniformity is obtained over a wide area. The procedure is particularly useful for mode reflection in distributed feedback lasers.
摘要翻译：描述了用于在各种半导体中制造光栅的光电化学蚀刻工艺。因为这是一个直接的，单步的过程，在广泛的领域获得了极大的均匀性。该过程对分布式反馈激光器中的模式反射特别有用。

10. 发明授权

US4404072A Photoelectrochemical processing of III-V semiconductors 失效
标题翻译： III-V半导体的光电化学处理
公开(公告)号：US4404072A
公开(公告)日：1983-09-13
申请号：US275805
申请日：1981-06-22
申请人： Paul A. Kohl , Frederick W. Ostermayer, Jr.
发明人： Paul A. Kohl , Frederick W. Ostermayer, Jr.
IPC分类号： C25F3/12 , C25F3/14 , H01L21/3063
CPC分类号： C25F3/14 , C25F3/12 , H01L21/30635
摘要： A photoelectrochemical process is described for anisotropic etching of intrinsic III-V compound semiconductors. Such a process is highly advantageous because the etching takes place only where light is incident on the surface of the semiconductor. Thus, various patterns can be etched into the semiconductor surface without the use of a mask, undercutting is minimized where masks are used and the shape of the hole etched out of the surface can be controlled.
摘要翻译：描述了用于内在III-V族化合物半导体的各向异性蚀刻的光电化学方法。这种方法是非常有利的，因为蚀刻仅在光入射到半导体的表面上时发生。因此，不用使用掩模，可以将各种图案蚀刻到半导体表面中，在使用掩模的情况下使底切最小化，并且可以控制蚀刻出表面的孔的形状。

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