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51. 发明授权

US08502304B2 Semiconductor substrate and semiconductor chip 失效
标题翻译：半导体衬底和半导体芯片
公开(公告)号：US08502304B2
公开(公告)日：2013-08-06
申请号：US13048938
申请日：2011-03-16
申请人： Takayuki Hashimoto
发明人： Takayuki Hashimoto
IPC分类号： H01L23/58
CPC分类号： H01L25/162 , H01L23/49562 , H01L23/49575 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/16 , H01L27/0629 , H01L29/7397 , H01L29/861 , H01L2224/0603 , H01L2224/48137 , H01L2224/48247 , H01L2224/4903 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/12036 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： A semiconductor substrate capable of detecting operating current of a MOSFET and diode current in a miniaturized MOSFET such as a trench-gate type MOSFET is provided. A semiconductor substrate includes a main current region and a current sensing region in which current smaller than main current flowing in the main current region flows. The main current region has a source electrode disposed on a main surface, the source electrode being in contact with a p-type semiconductor region (body) and an n+-type semiconductor region (source), and the current sensing region has a MOSFET current detecting electrode and a diode current detecting electrode on a main surface, the MOSFET current detecting electrode being in contact with the p-type semiconductor region (body) and the n+-type semiconductor region (source), the diode current detecting electrode being in contact with the p-type semiconductor region (body).
摘要翻译：提供了能够检测诸如沟槽栅型MOSFET的小型化MOSFET中的MOSFET的工作电流和二极管电流的半导体衬底。半导体衬底包括主电流区域和电流感测区域，其中流过主电流区域的主电流的电流小于该电流区域。主电流区域具有设置在主表面上的源电极，源电极与p型半导体区域（主体）和n +型半导体区域（源极）接触，并且电流感测区域具有MOSFET电流检测电极和主表面上的二极管电流检测电极，MOSFET电流检测电极与p型半导体区域（主体）和n +型半导体区域（源极）接触，二极管电流检测电极接触与p型半导体区域（主体）。

52. 发明授权

US08237493B2 Semiconductor device and power supply device using the same 失效
标题翻译：半导体装置及使用该装置的电源装置
公开(公告)号：US08237493B2
公开(公告)日：2012-08-07
申请号：US13243642
申请日：2011-09-23
申请人： Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
发明人： Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
IPC分类号： H01L25/00
CPC分类号： H01L25/16 , H01L25/074 , H01L2224/05554 , H01L2224/0603 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/4903 , H01L2224/49175 , H01L2924/00014 , H01L2924/12032 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , Y02B70/1466 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要： A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.
摘要翻译：提供能够减小电感的半导体器件。在其中将整流MOSFET，换向MOSFET和驱动这些MOSFET的驱动IC安装在一个封装上的半导体器件中，整流MOSFET，金属板和换向MOSFET被层压。主电路的电流从封装的后表面流向其前表面。金属板通过封装中的布线连接到输出端子。引线键合用于连接驱动IC，整流MOSFET和换向MOSFET，所有端子都放置在同一平面上。因此，电感变小，电源损耗和尖峰电压也降低。

53. 发明申请

US20100327979A1 Current Detection Apparatus and Control System Using the Same 审中-公开
标题翻译：电流检测装置及其使用的控制系统
公开(公告)号：US20100327979A1
公开(公告)日：2010-12-30
申请号：US12826429
申请日：2010-06-29
申请人： Nobuyasu KANEKAWA , Teppei Hirotsu , Takayuki Hashimoto , Itaru Tanabe
发明人： Nobuyasu KANEKAWA , Teppei Hirotsu , Takayuki Hashimoto , Itaru Tanabe
IPC分类号： H03F3/04
CPC分类号： H03F3/45475 , H03F2200/261 , H03F2203/45528 , H03F2203/45594 , H03F2203/45604
摘要： A highly accurate current detection apparatus is realized in a one-chip LSI. An end of a current detector is connected to an analog power supply (VACC) or a virtual analog ground potential (VAG) of a voltage amplifier and an A/D converter, and a predetermined voltage is supplied between the voltage amplifier and the virtual ground potential (VAG) by a power supply.
摘要翻译：在单片LSI中实现了高精度的电流检测装置。电流检测器的端部连接到电压放大器和A / D转换器的模拟电源（VACC）或虚拟模拟地电位（VAG），并且在电压放大器和虚拟地之间提供预定电压电位（VAG）。

54. 发明授权

US06327457B1 Opening-closing device with limited lifting range 有权
标题翻译：开启装置，起升范围有限
公开(公告)号：US06327457B1
公开(公告)日：2001-12-04
申请号：US09549144
申请日：2000-04-13
申请人： Takayuki Hashimoto
发明人： Takayuki Hashimoto
IPC分类号： G03G1500
CPC分类号： G03G15/605 , E05Y2201/638
摘要： An opening-closing device is capable of automatically positioning an opened pressing mechanism horizontally in relation to a supporting table. A base member is provided for fixation to a body of an apparatus on which the pressing mechanism is to be used. A supporting member is secured pivotably to the base member and a lifting member is provided to which a rear portion of the pressing mechanism is fixed to a free end of the supporting member with a supporting pin reversibly in a direction in which the lifting member will overlap the supporting member. An elastic member forces the supporting member along with the lifting member in the opening direction of the pressing mechanism while forcing the lifting member in a direction in which the lifting member will overlap the supporting member. The opening-closing device further has a mechanism for limiting to a predetermined range, the range of the lifting member being reversible about the pivoted position relative to the supporting member and an adjusting mechanism abutting a part of the base member or the apparatus body to reverse the lifting member.
摘要翻译：开闭装置能够相对于支撑台水平地自动定位打开的按压机构。提供基座构件用于固定到其上将使用按压机构的装置的主体。支撑构件可枢转地固定到基部构件，并且提供提升构件，按压机构的后部通过支撑销以可提升构件将重叠的方向可逆地固定到支撑构件的自由端，支撑构件。弹性构件沿着按压机构的打开方向将提升构件沿着提升构件推压，同时迫使提升构件沿着提升构件将与支撑构件重叠的方向。开闭装置还具有用于限制在预定范围的机构，提升构件的范围围绕枢转位置相对于支撑构件是可逆的;以及调节机构，邻接基座构件或装置主体的一部分以反向提升构件。

55. 发明授权

US5635733A Semiconductor light emitting element with a current diffusing layer having a changing carrier concentration therein 失效
标题翻译：具有其中载流子浓度变化的电流扩散层的半导体发光元件
公开(公告)号：US5635733A
公开(公告)日：1997-06-03
申请号：US601279
申请日：1996-02-16
申请人： Hiroaki Okagawa , Takayuki Hashimoto , Keiji Miyashita , Tomoo Yamada , Kazuyuki Tadatomo
发明人： Hiroaki Okagawa , Takayuki Hashimoto , Keiji Miyashita , Tomoo Yamada , Kazuyuki Tadatomo
IPC分类号： H01L33/14 , H01L33/30 , H01L33/40 , H01L33/00
CPC分类号： H01L33/14
摘要： In the light emitting element comprising an n-type semiconductor substrate, a lower electrode formed on the lower surface of the substrate, and a light emitting part having a pn junction, which is composed of an InGaAlP compound semiconductor material, a p-type current diffusing layer and an upper electrode which are laminated on the upper surface of the substrate in that order from the substrate side, the improvement wherein a carrier concentration of the current diffusing layer is lower on a light emitting part side thereof than that on an upper electrode side thereof, and at least the upper electrode side of the current diffusing layer is composed of GaP. By employing such structure, diffusion of the dopant to a light emitting part can be suppressed even when the carrier concentration of the upper part of the current diffusing layer is set to be higher, thereby affording a lower resistance of the current diffusing layer as a whole. The GaP being a compound semiconductor without Al, the amount of the dopant necessary for affording the superior effects of suppressing the diffusion of the dopant to the light emitting part can be less. Consequently, the luminous efficiency can be improved as compared with conventional ones, and a light emitting element having a long service life and superior reliability can be obtained.
摘要翻译：在包含n型半导体衬底的发光元件中，形成在衬底的下表面上的下电极和由InGaAlP化合物半导体材料构成的具有pn结的发光部分，p型电流扩散层和上电极，从衬底侧依次层叠在衬底的上表面上，其中电流扩散层的发光部分侧的载流子浓度比上电极的载流子浓度低并且电流扩散层的至少上电极侧由GaP构成。通过采用这样的结构，即使将电流扩散层的上部的载流子浓度设定得较高，也能够抑制掺杂剂向发光部的扩散，从而提供整体上的电流扩散层的较低的电阻。 GaP是没有Al的化合物半导体，可以减少为了提供抑制掺杂剂向发光部的扩散的优异效果所需的掺杂剂的量。因此，与现有技术相比，能够提高发光效率，能够得到使用寿命长，可靠性优异的发光元件。

56. 发明授权

US5631475A Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US5631475A
公开(公告)日：1997-05-20
申请号：US498752
申请日：1995-07-06
申请人： Shinichi Watabe , Hiroaki Okagawa , Takayuki Hashimoto , Kazuyuki Tadatomo
发明人： Shinichi Watabe , Hiroaki Okagawa , Takayuki Hashimoto , Kazuyuki Tadatomo
IPC分类号： H01L29/205 , H01L21/20 , H01L21/205 , H01L33/12 , H01L33/30 , H01L33/40 , H01L33/00
CPC分类号： H01L33/40 , H01L33/30
摘要： A semiconductor light emitting element comprising a light emitting part comprising an AlGaInP active layer and a AlGaInP cladding layer, which is formed on a GaAs substrate, and an AlGaAs layer and a Ga.sub.x In.sub.1-x P layer (0.7.ltoreq.x.ltoreq.1.0) deposited in this order on said light emitting part, wherein said Ga.sub.x In.sub.1-x P layer has a thickness of not more than 1.0 .mu.m. According to the present invention, absorption of the emitted light by an electrode contact layer and the occurrence of an interfacial distortion between the electrode contact layer and the layer thereunder can be suppressed, and a semiconductor light emitting element permitting easy production thereof and having a high luminance and a long service life can be provided.
摘要翻译：一种半导体发光元件，包括形成在GaAs衬底上的AlGaInP有源层和AlGaInP包层的发光部分，以及AlGaAs层和GaxIn1-xP层（0.7≤x≤1.0）以上述顺序沉积在所述发光部分上，其中所述GaxIn1-xP层的厚度不大于1.0μm。根据本发明，可以抑制由电极接触层吸收发射的光，并且可以抑制电极接触层与其下面的层之间的界面变形的发生，并且可以容易地制造并具有高的半导体发光元件可以提供亮度和长的使用寿命。

57. 发明授权

US5562943A Salt compositions 失效
标题翻译：盐组成
公开(公告)号：US5562943A
公开(公告)日：1996-10-08
申请号：US288952
申请日：1994-08-11
申请人： Hen-Sik Koh , Yoshikazu Kawashima , Takayuki Hashimoto
发明人： Hen-Sik Koh , Yoshikazu Kawashima , Takayuki Hashimoto
IPC分类号： A23L1/304 , A23L1/202 , A23L1/237 , A23L1/238
CPC分类号： A23L27/50 , A23L27/40
摘要： A salt composition is provided for preventing excess intake of salt (sodium chloride) and achieving a well balanced intake of minerals. The composition which is used in the place of conventional table salt consists essentially of 100 parts by weight of a mixture containing 30 to 75% by weight of sodium chloride and 25 to 70% by weight of sylvinite admixed with 5 to 60 parts by weight of a citrate. Seasonings, such as soybean paste and soy sauce, and foods, such as pickles and kimchi, can be prepared with such a salt composition.
摘要翻译：提供了一种盐组合物，用于防止过量摄入盐（氯化钠）并实现均匀的矿物摄入。用于代替常规餐桌盐的组合物基本上由100重量份的含有30-75重量％氯化钠和25-70重量％的硅镁石的混合物与5-60重量份的柠檬酸盐可以用这样的盐组合物制备诸如大豆酱和酱油的调味料，以及腌菜和泡菜等食品。

58. 发明授权

US09349847B2 Semiconductor device and power converter 有权
标题翻译：半导体器件和电源转换器
公开(公告)号：US09349847B2
公开(公告)日：2016-05-24
申请号：US14364959
申请日：2011-12-15
申请人： Takayuki Hashimoto , Mutsuhiro Mori
发明人： Takayuki Hashimoto , Mutsuhiro Mori
IPC分类号： H01L29/66 , H01L21/332 , H01L29/739 , H01L29/861 , H01L29/08 , H01L29/10 , H01L27/07 , H01L29/88 , H02M7/537
CPC分类号： H01L29/7397 , H01L27/0727 , H01L29/0834 , H01L29/1095 , H01L29/7395 , H01L29/861 , H01L29/88 , H02M7/537
摘要： A semiconductor device of this invention (an IGBT with a built-in diode) includes: an n−-type drift layer 1; a p-type channel region 2 that is arranged in contact with the surface side of this n−-type drift layer 1; a gate electrode 5 that is provided in a trench T provided so as to penetrate this p-type channel region 2 and reach to the n−-type drift layer 1 through a gate insulating film 3; an n-type source region 4 that is provided so as to contact the trench T on the surface side of the p-type channel region 2; a high-concentration n-type region 6 that is arranged in contact with the back side of the n−-type drift layer 1; and a high-concentration p-type region 7 that is arranged in contact with the back side of this high-concentration n-type region 6; in which a junction of the high-concentration n-type region 6 and the high-concentration p-type region 7 is a tunnel junction. According to this semiconductor device, it is possible to form the IGBT and the diode on a single chip. Moreover, it is possible to avoid problems of “snap back” and “current concentration.”
摘要翻译：本发明的半导体器件（具有内置二极管的IGBT）包括：n型漂移层1; 与该n型漂移层1的表面侧接触的p型沟道区域2; 设置在沟槽T中以设置成穿过该p型沟道区域2并通过栅极绝缘膜3到达n型漂移层1的栅电极5; n型源极区域4，其设置成与p型沟道区域2的表面侧的沟槽T接触; 配置成与n型漂移层1的背面接触的高浓度n型区域6; 以及与该高浓度n型区域6的背面接触的高浓度p型区域7; 其中高浓度n型区域6和高浓度p型区域7的结是隧道结。根据该半导体器件，可以在单个芯片上形成IGBT和二极管。此外，可以避免“回弹”和“当前集中”的问题。

59. 发明申请

US20150162429A1 Semiconductor Device and Power Conversion Device Using the Same 审中-公开
标题翻译：半导体器件和使用其的电源转换器件
公开(公告)号：US20150162429A1
公开(公告)日：2015-06-11
申请号：US14374428
申请日：2012-01-26
申请人： Takayuki Hashimoto , Masahiro Masunaga
发明人： Takayuki Hashimoto , Masahiro Masunaga
IPC分类号： H01L29/78 , H01L27/06 , H02M7/537 , H01L29/861
CPC分类号： H01L29/78 , H01L27/06 , H01L29/0834 , H01L29/7397 , H01L29/861 , H01L29/8611 , H02M7/003 , H02M7/537 , H02M2001/0051 , H02M2001/0054
摘要： A semiconductor device (10) includes an n-type drift layer (11) that is a semiconductor substrate; a p-type region (12) and an n-type region (13) that are formed on a surface of the semiconductor substrate and serving as anode regions; a high-concentration n-type region (15) formed on a back surface of the semiconductor substrate and serving as a cathode region; and an anode electrode (1). The semiconductor substrate includes, on its surface, a structure in which the p-type region (12) and the n-type region (13) are adjacent to each other, wherein the p-type region (12) is connected to the anode electrode (1), and the n-type region (13) is connected to the anode electrode (1) via a switch (14). A control unit (40) is connected to a control terminal of the switch (14). In a conduction state of the semiconductor device (10), the control unit (40) outputs a high-frequency pulse to the control terminal of the switch (14) to turn on and off the switch (14).
摘要翻译：半导体器件（10）包括作为半导体衬底的n型漂移层（11）; 形成在半导体衬底的表面上并用作阳极区的p型区域（12）和n型区域（13）; 形成在半导体衬底的背面并用作阴极区的高浓度n型区域（15）; 和阳极电极（1）。半导体衬底在其表面上包括其中p型区域（12）和n型区域（13）彼此相邻的结构，其中p型区域（12）连接到阳极电极（1）和n型区域（13）经由开关（14）连接到阳极电极（1）。控制单元（40）连接到开关（14）的控制端子。在半导体器件（10）的导通状态下，控制单元（40）向开关（14）的控制端子输出高频脉冲，以接通和断开开关（14）。

60. 发明授权

US08692805B2 Coordinate input apparatus, control method, and storage medium 有权
标题翻译：坐标输入装置，控制方法和存储介质
公开(公告)号：US08692805B2
公开(公告)日：2014-04-08
申请号：US12955590
申请日：2010-11-29
申请人： Takayuki Hashimoto
发明人： Takayuki Hashimoto
IPC分类号： G09G5/00
CPC分类号： G06F3/03542 , G06F3/0386 , G06F3/0421
摘要： A coordinate input apparatus for making an input by bringing a pointing device into contact with an input area of an apparatus main body is provided, wherein the pointing device comprises: a timer configured to generate a transmission cycle by timekeeping; a detection unit configured to detect the presence/absence of an input instruction according to the presence/absence of contact of the pointing device with the input area; wherein when the detection unit detects the presence of the input instruction, and then detects the absence of the input instruction, the timer continues timekeeping of the transmission cycle during a predetermined holding period.
摘要翻译：提供了一种通过使指示装置与装置主体的输入区域接触而进行输入的坐标输入装置，其中，所述指示装置包括：定时器，被配置为通过计时生成发送周期; 检测单元，被配置为根据指示设备与输入区域的接触的存在/不存在来检测输入指令的存在/不存在; 其中，当所述检测单元检测到所述输入指令的存在，然后检测到所述输入指令不存在时，所述定时器在预定保持期间内继续所述传输周期的计时。

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