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51. 发明申请

US20060284112A1 Apparatus and method for specimen fabrication 有权
公开(公告)号：US20060284112A1
公开(公告)日：2006-12-21
申请号：US11441016
申请日：2006-05-26
申请人： Satoshi Tomimatsu , Miyuki Takahashi , Hiroyasu Shichi , Muneyuki Fukuda
发明人： Satoshi Tomimatsu , Miyuki Takahashi , Hiroyasu Shichi , Muneyuki Fukuda
IPC分类号： G21G5/00
CPC分类号： H01J37/3056 , H01J2237/006 , H01J2237/31744 , H01J2237/31745
摘要： A specimen fabricating apparatus comprises: a specimen stage, on which a specimen is placed; a charged particle beam optical system to irradiate a charged particle beam on the specimen; an etchant material supplying source to supply an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state; and a vacuum chamber to house therein the specimen stage. A specimen fabricating method comprises the steps of: processing a hole in the vicinity of a requested region of a specimen by means of irradiation of a charged particle beam; exposing the requested region by means of irradiation of the charged particle beam; supplying an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state, to the requested region as exposed; and irradiating the charged particle beam on the requested region as exposed.

52. 发明申请

US20060065854A1 Ion beam system and machining method 有权
标题翻译：离子束系统和加工方法
公开(公告)号：US20060065854A1
公开(公告)日：2006-03-30
申请号：US11210732
申请日：2005-08-25
申请人： Hiroyasu Shichi , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
发明人： Hiroyasu Shichi , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
IPC分类号： H01J37/08
CPC分类号： H01J37/3056 , G01N1/32 , H01J27/10 , H01J37/09 , H01J2237/0458 , H01J2237/0835 , H01J2237/31745 , H01J2237/31749
摘要： There is a machining method which shortens a cross-section forming time by an ion beam, a machining method which shortens a machining time for separating a micro sample from a wafer, and an ion beam machining system. The ion beam machining system has a vacuum container containing a duoplasmatron, non-axially symmetric ion beam lens and stencil mask, wherein a micro sample is removed from a sample by an argon ion beam having a steep beam profile in a direction perpendicular to the cross-section. The cross-section observations for wafer inspection/defect analysis used in device manufacture can be obtained in a short time. Further, there is a inspection/analysis method which does not cause defects even if a sample is removed and a wafer is returned to the process.
摘要翻译：存在通过离子束缩短截面形成时间的加工方法，缩短用于从晶片分离微型样品的加工时间的加工方法以及离子束加工系统。离子束加工系统具有含有双质子，非轴对称的离子束透镜和模板掩模的真空容器，其中通过具有垂直于十字的方向的陡峭波束轮廓的氩离子束从样品中除去微量样品 -部分。用于器件制造的晶圆检查/缺陷分析的横截面观察可以在短时间内获得。此外，存在即使去除样品并且晶片返回到该过程也不会引起缺陷的检查/分析方法。

53. 发明授权

US06977376B2 Method of prevention charging, and apparatus for charged particle beam using the same 有权
标题翻译：防止充电的方法，以及使用其的带电粒子束的装置
公开(公告)号：US06977376B2
公开(公告)日：2005-12-20
申请号：US10773330
申请日：2004-02-09
申请人： Muneyuki Fukuda , Hiroyasu Shichi , Satoshi Tomimatsu
发明人： Muneyuki Fukuda , Hiroyasu Shichi , Satoshi Tomimatsu
IPC分类号： G01N23/225 , G01Q10/00 , G01Q30/02 , G01Q30/20 , H01J37/02 , H01J37/20 , H01J37/28 , H01J37/305 , H01L21/66 , G01N23/00 , H01S1/00
CPC分类号： H01J37/28 , G01N23/225 , H01J37/026 , H01J37/3056
摘要： An apparatus for a charged particle beam has a charged particle source; a charged particle optical system for focusing and deflecting a charged particle beam emitted from the charged particle source; a detector for detecting secondary particles emitted from a sample irradiated with the charged particle beam; and a sample holder on which the sample is mounted. The apparatus has an electrode for preventing charging which is provided so as to be movable with respect to the surface of the sample holder, and a controller for the electrode for preventing charging, which controls a voltage to be applied to the electrode for preventing charging and the movement. Preventing the charging is performed by generating an induced current or a current between an area irradiated with the charged particle beam in the sample and the electrode for preventing charging.
摘要翻译：带电粒子束的装置具有带电粒子源; 用于聚焦和偏转从带电粒子源发射的带电粒子束的带电粒子光学系统; 用于检测从被照射的带电粒子束的样品发射的二次粒子的检测器; 和其上安装有样品的样品架。该装置具有用于防止充电的电极，其被设置为能够相对于样品保持器的表面移动，以及用于防止充电的电极的控制器，其控制施加到用于防止充电的电极的电压，以及运动。通过在样品中用带电粒子束照射的区域和用于防止充电的电极之间产生感应电流或电流来进行充电。

54. 发明授权

US06794663B2 Method and apparatus for specimen fabrication 有权
公开(公告)号：US06794663B2
公开(公告)日：2004-09-21
申请号：US10699853
申请日：2003-11-04
申请人： Hiroyasu Shichi , Tohru Ishitani , Hidemi Koike , Kaoru Umemura , Eiichi Seya , Mitsuo Tokuda , Satoshi Tomimatsu , Hideo Kashima , Muneyuki Fukuda
发明人： Hiroyasu Shichi , Tohru Ishitani , Hidemi Koike , Kaoru Umemura , Eiichi Seya , Mitsuo Tokuda , Satoshi Tomimatsu , Hideo Kashima , Muneyuki Fukuda
IPC分类号： G21G500
CPC分类号： G01N23/20 , B23K15/0006 , B23K15/0013 , G01N1/286 , H01J2237/3114 , H01J2237/31745
摘要： A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.

55. 发明授权

US08779380B2 Ion beam device 有权
标题翻译：离子束装置
公开(公告)号：US08779380B2
公开(公告)日：2014-07-15
申请号：US12995700
申请日：2009-03-30
申请人： Hiroyasu Shichi , Shinichi Matsubara , Norihide Saho , Masahiro Yamaoka , Noriaki Arai
发明人： Hiroyasu Shichi , Shinichi Matsubara , Norihide Saho , Masahiro Yamaoka , Noriaki Arai
IPC分类号： H01J27/00
CPC分类号： H01J27/26 , H01J27/022 , H01J37/023 , H01J37/067 , H01J37/08 , H01J37/26 , H01J37/28 , H01J2237/002 , H01J2237/006 , H01J2237/061 , H01J2237/0807 , H01J2237/2803
摘要： An ion beam device according to the present invention includes a gas field ion source (1) including an emitter tip (21) supported by an emitter base mount (64), a ionization chamber (15) including an extraction electrode (24) and being configured to surround the emitter tip (21), and a gas supply tube (25). A center axis line of the extraction electrode (24) overlaps or is parallel to a center axis line (14A) of the ion irradiation light system, and a center axis line (66) passing the emitter tip (21) and the emitter base mount (64) is inclinable with respect to a center axis line of the ionization chamber (15). Accordingly, an ion beam device including a gas field ion source capable of adjusting the direction of the emitter tip is provided.
摘要翻译：根据本发明的离子束装置包括气体离子源（1），其包括由发射极基座（64）支撑的发射极尖端（21），包括引出电极（24）的电离室（15）构造成围绕发射器尖端（21），以及气体供应管（25）。引出电极（24）的中心轴线与离子照射光系统的中心轴线（14A）重叠或平行，通过发射极尖端（21）和发射极基座（64）相对于所述电离室（15）的中心轴线是可倾斜的。因此，提供了包括能够调节发射极尖端的方向的气体场离子源的离子束装置。

56. 发明授权

US08481980B2 Ion source, ion beam processing/observation apparatus, charged particle beam apparatus, and method for observing cross section of sample 有权
标题翻译：离子源，离子束处理/观察装置，带电粒子束装置和观察样品截面的方法
公开(公告)号：US08481980B2
公开(公告)日：2013-07-09
申请号：US12108037
申请日：2008-04-23
申请人： Hiroyasu Shichi , Satoshi Tomimatsu , Kaoru Umemura , Noriyuki Kaneoka , Koji Ishiguro
发明人： Hiroyasu Shichi , Satoshi Tomimatsu , Kaoru Umemura , Noriyuki Kaneoka , Koji Ishiguro
IPC分类号： G21K5/10
CPC分类号： C23C14/3442 , H01J27/10 , H01J37/08 , H01J37/28 , H01J37/3023 , H01J37/3056 , H01J2237/006 , H01J2237/057 , H01J2237/0807 , H01J2237/0825 , H01J2237/0827 , H01J2237/31745 , H01J2237/31749
摘要： An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder a gas tube, a gas volume control valve, and a stop valve.
摘要翻译：一种与电子部件的横截面观察技术有关的离子束加工和观察方法，通过使用离子束加工样品的电子部件和能够减少填充加工孔的时间的带电粒子束处理器在填充区域具有高度的平整度。观察装置能够切换用于用于观察样品的气体离子束的种类来加工样品的气体离子束的种类。为了实现用于样品加工的气体离子束的种类和用于样品观察的气体离子束的种类之间的切换，使用至少两个气体导入系统，每个系统具有气瓶，气体管，气体音量控制阀和截止阀。

57. 发明授权

US08455841B2 Ion microscope 有权
标题翻译：离子显微镜
公开(公告)号：US08455841B2
公开(公告)日：2013-06-04
申请号：US13381623
申请日：2010-06-04
申请人： Norihide Saho , Hiroyuki Tanaka , Noriaki Arai , Hiroyasu Shichi , Yoichi Ose
发明人： Norihide Saho , Hiroyuki Tanaka , Noriaki Arai , Hiroyasu Shichi , Yoichi Ose
IPC分类号： H01J37/26
CPC分类号： H01J37/08 , H01J37/28 , H01J2237/002 , H01J2237/0216 , H01J2237/061 , H01J2237/0807
摘要： Provided are a large-current and highly stable gas field ionization ion source, and a high-resolution ion microscope with a large focal depth. The present invention relates to an ion microscope provided with a gas field ionization ion source, in which disposed are a refrigerator for cooling the gas field ionization ion source independent of the main body of the ion microscope, and a refrigerant circulation circuit cooling mechanism for circulating a refrigerant between the gas field ionization ion source and the refrigerator. Consequently it is possible to reduce the mechanical vibration of the refrigerator, which propagates to the gas field ionization ion source, and to achieve both the improvement of the brightness of the ion source and the improvement of ion beam focusing performance.
摘要翻译：提供大电流和高度稳定的气田电离离子源，以及具有大焦深的高分辨率离子显微镜。本发明涉及一种具有气田电离离子源的离子显微镜，其中设置有用于冷却与离子显微镜主体无关的气田电离离子源的制冷机，以及用于循环的制冷剂循环回路冷却机构气体离子源和冰箱之间的制冷剂。因此，可以减小传播到气田电离离子源的冰箱的机械振动，并且实现离子源的亮度的提高和离子束聚焦性能的提高。

58. 发明授权

US07700931B2 Ion beam processing apparatus 有权
标题翻译：离子束处理装置
公开(公告)号：US07700931B2
公开(公告)日：2010-04-20
申请号：US11674262
申请日：2007-02-13
申请人： Hiroyasu Shichi , Satoshi Tomimatsu , Noriyuki Kaneoka , Kaoru Umemura , Koji Ishiguro
发明人： Hiroyasu Shichi , Satoshi Tomimatsu , Noriyuki Kaneoka , Kaoru Umemura , Koji Ishiguro
IPC分类号： G21K5/10 , H01J37/08 , A61N5/00 , G21G5/00 , G21K7/00 , G01N23/00
CPC分类号： H01J37/261 , H01J37/20 , H01J37/3045 , H01J2237/08 , H01J2237/20207 , H01J2237/24528 , H01J2237/28 , H01J2237/31713 , H01J2237/3174 , H01J2237/31749
摘要： The present invention provides an ion beam processing technology for improving the precision in processing a section of a sample using an ion beam without making a processing time longer than a conventionally required processing time, and for shortening the time required for separating a micro test piece without breaking the sample or the time required for making preparations for the separation. An ion beam processing apparatus is structured so that an axis along which an ion beam is drawn out of an ion source and an ion beam irradiation axis along which the ion beam is irradiated to a sample mounted on a first sample stage will meet at an angle. Furthermore, the ion beam processing apparatus has a tilting ability to vary an angle of irradiation, at which the ion beam is irradiated to the sample, by rotating a second sample stage, on which a test piece extracted from the sample by performing ion beam processing is mounted, about the tilting axis of the second sample stage. The ion beam processing apparatus is structured so that a segment drawn by projecting the axis, along which the ion beam is drawn out of the ion source, on a plane perpendicular to the ion beam irradiation axis can be at least substantially parallel to a segment drawn by projecting the tilting axis of the second sample stage on the plane perpendicular to the ion beam irradiation axis.
摘要翻译：本发明提供了一种离子束处理技术，用于提高使用离子束处理样品的一部分的精度，而不需要比常规所需的处理时间长的处理时间，并且缩短了分离微测试件所需的时间，而没有打破样品或准备分离所需的时间。离子束处理装置被构造成使得离子束从离子源拉出的轴和离子束照射到安装在第一样品台上的样品的离子束照射轴将以一定角度相遇。此外，离子束处理装置具有通过旋转第二样品台而使离子束照射到样品上的照射角度的倾斜能力，通过进行离子束处理从样品中提取试验片围绕第二样品台的倾斜轴安装。离子束处理装置被构造成使得通过将离子束从离子源拉出的轴在垂直于离子束照射轴线的平面上突出的拉伸而绘制的区段可以至少基本上平行于拉伸的区段通过将第二样品台的倾斜轴投影在垂直于离子束照射轴的平面上。

59. 发明申请

US20060284115A1 Ion beam apparatus and analysis method 审中-公开
标题翻译：离子束装置及分析方法
公开(公告)号：US20060284115A1
公开(公告)日：2006-12-21
申请号：US11439541
申请日：2006-05-24
申请人： Noriyuki Kaneoka , Kaoru Umemura , Koji Ishiguro , Hiroyasu Shichi , Satoshi Tomimatsu
发明人： Noriyuki Kaneoka , Kaoru Umemura , Koji Ishiguro , Hiroyasu Shichi , Satoshi Tomimatsu
IPC分类号： H01J37/08
CPC分类号： H01J37/28 , H01J2237/2815 , H01J2237/31732
摘要： A technique is provided which can precisely form a deposition pile in a hole bored in the surface of a specimen. In ion beam apparatus and analysis method, the specimen surface is bored or a deposition pile is formed in the hole bored in the specimen surface. A measuring instrument is provided for measuring a height of the hole bored in the specimen surface or a height of the deposition pile formed in the hole. During fabrication of boring the hole in the specimen surface or fabrication of filling the hole bored in the specimen surface, an image of an area encompassing the hole and the depth of the hole or the height of the deposition pile are displayed.
摘要翻译：提供了一种技术，其可以在在样品表面上钻孔的孔中精确地形成沉积桩。在离子束装置和分析方法中，试样表面无孔或在试样表面孔中形成沉积桩。提供了一种测量仪器，用于测量在样品表面中钻孔的孔的高度或形成在孔中的沉积桩的高度。在镗孔试样表面的孔或制作填充试样表面的孔时，显示包围孔的区域和孔的深度或沉积桩的高度的图像。

60. 发明授权

US5481109A Surface analysis method and apparatus for carrying out the same 失效
标题翻译：表面分析方法及其执行装置
公开(公告)号：US5481109A
公开(公告)日：1996-01-02
申请号：US211575
申请日：1994-04-11
申请人： Ken Ninomiya , Hideo Todokoro , Tokuo Kure , Yasuhiro Mitsui , Katsuhiro Kuroda , Hiroyasu Shichi
发明人： Ken Ninomiya , Hideo Todokoro , Tokuo Kure , Yasuhiro Mitsui , Katsuhiro Kuroda , Hiroyasu Shichi
IPC分类号： G01N23/225 , H01J37/252 , G01N23/223
CPC分类号： G01N23/2252 , H01J37/252 , G01N2223/076 , H01J2237/24415
摘要： A surface analysis method and an apparatus for carrying out the samein which the method involves the detection of fluorescence X-rays emitted from the surface of a sample in response to a finely focused electron beam irradiated thereto, whereby residues on the sample surface are analyzed qualitatively and quantitatively. An electron beam (1) is irradiated through a hole (9) at the center of an X-ray detector (8) into a fine hole (h) on the surface of a sample (2). In response, fluorescence X-rays are emitted from inside the fine hole (h) and are detected by an annular X-ray detector (8) having an energy analysis function near the axis of the electron beam (1) (preferably within 20 degrees with respect to the center axis of the electron beam). This arrangement allows the fluorescence X-rays from the fine hole (h) to reach the X-ray detector (8) without being absorbed by the substance of the material. That in turn ensures qualitative and quantitative analysis of high accuracy about residues in fine holes of large aspect ratios. Since the method is of non-destructive nature, the analyzed sample may be placed unscathed back into the fabrication process.
摘要翻译： PCT No.PCT / JP93 / 01373 Sec。 371日期1994年04月11日 102（e）日期1994年4月11日PCT提交1993年9月27日PCT公布。出版物WO94 / 08232 日期1994年4月14日。表面分析方法及其实施方法涉及检测从样品表面发射的荧光X射线，其响应于照射到其上的精细聚焦的电子束，由此残留物对样品表面进行定性和定量分析。电子束（1）通过X射线检测器（8）的中心的孔（9）照射到样品（2）的表面上的细孔（h）中。作为响应，从细孔（h）内部发射荧光X射线，并且通过在电子束（1）的轴附近具有能量分析功能的环形X射线检测器（8）来检测（优选在20度以内）相对于电子束的中心轴）。这种布置允许来自细孔（h）的荧光X射线到达X射线检测器（8）而不被材料的物质吸收。这反过来又确保了对大长宽比的细孔中残留物的高精度的定性和定量分析。由于该方法具有非破坏性，所以分析的样品可以无损地放置在制造过程中。

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