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51. 发明申请

US20080266012A1 METHOD FOR CONTROLLING HIGH-FREQUENCY RADIATOR 审中-公开
标题翻译：控制高频散热器的方法
公开(公告)号：US20080266012A1
公开(公告)日：2008-10-30
申请号：US12109804
申请日：2008-04-25
申请人： Kazuhiro Yahata , Takashi Uno , Hiroyuki Sakai , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Kazuhiro Yahata , Takashi Uno , Hiroyuki Sakai , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H03L7/099
CPC分类号： H03H7/40 , H05B6/686 , H05B6/705 , Y02B40/146
摘要： A method for controlling a high-frequency radiator includes the steps of: (a) applying a high-frequency radiation through the solid-state oscillator and the antenna; (b) sensing part of the high-frequency radiation returned from the antenna to the solid-state oscillator; (c) adjusting radiation/propagation conditions for the high-frequency radiation on the basis of the sensed results in the step (b), the high-frequency radiation propagating from the solid-state oscillator to the antenna; and (d) after the step (c), applying the high-frequency radiation through the solid-state oscillator and the antenna to a target object. In the step (c), the oscillation frequency of the solid-state oscillator, the power of the high-frequency radiation applied by the solid-state oscillator, the power supply voltage supplied to the solid-state oscillator, the impedance match between the output impedance of the solid-state oscillator and the impedance of the antenna, or any other condition is changed.
摘要翻译：一种用于控制高频辐射器的方法包括以下步骤：（a）通过固态振荡器和天线施加高频辐射; （b）感测从天线返回到固态振荡器的一部分高频辐射; （c）基于步骤（b）中检测到的结果，调整从固态振荡器传播到天线的高频辐射来调整高频辐射的辐射/传播条件; 和（d）在步骤（c）之后，将高频辐射通过固态振荡器和天线施加到目标对象。在步骤（c）中，固态振荡器的振荡频率，由固态振荡器施加的高频辐射的功率，提供给固态振荡器的电源电压，固体振荡器的输出阻抗和天线的阻抗，或任何其他条件改变。

52. 发明授权

US07439552B2 Semiconductor light-emitting device and method for fabricating the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07439552B2
公开(公告)日：2008-10-21
申请号：US11492130
申请日：2006-07-25
申请人： Shinichi Takigawa , Daisuke Ueda , Susumu Koike
发明人： Shinichi Takigawa , Daisuke Ueda , Susumu Koike
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/38
摘要： A semiconductor light-emitting device includes a light-emitting layer and a light extraction layer formed on the light-emitting layer and made of a resin material containing particles. The maximum size of each of the particles contained in the light extraction layer is smaller than the wavelength of emitted light penetrating through the light extraction layer.
摘要翻译：半导体发光器件包括发光层和形成在发光层上并由含有颗粒的树脂材料制成的光提取层。包含在光提取层中的每个颗粒的最大尺寸小于穿过光提取层的发射光的波长。

53. 发明授权

US07425732B2 Nitride semiconductor device 失效
标题翻译：氮化物半导体器件
公开(公告)号：US07425732B2
公开(公告)日：2008-09-16
申请号：US11410920
申请日：2006-04-26
申请人： Tetsuzo Ueda , Satoshi Nakazawa , Daisuke Ueda , Toshiyuki Takizawa
发明人： Tetsuzo Ueda , Satoshi Nakazawa , Daisuke Ueda , Toshiyuki Takizawa
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L31/0304 , H01L31/03046 , H01L31/035236 , H01L31/1035 , H01L33/06 , H01S5/322 , H01S5/34333 , Y02E10/544
摘要： A nitride semiconductor device includes an active layer including a first nitride semiconductor layer and a second nitride semiconductor layer which are periodically stacked, the second nitride semiconductor layer having a different composition from a composition of the first nitride semiconductor layer. An energy at a lower edge of a conduction band in the first nitride semiconductor layer is lower than an energy at a lower edge of a conduction band in the second nitride semiconductor layer, and an energy at an upper edge of a valence band in the first nitride semiconductor layer is lower than an energy at an upper edge of a valence band in the second nitride semiconductor layer.
摘要翻译：氮化物半导体器件包括包含周期性堆叠的第一氮化物半导体层和第二氮化物半导体层的有源层，所述第二氮化物半导体层与第一氮化物半导体层的组成不同。在第一氮化物半导体层中的导带的下边缘处的能量低于第二氮化物半导体层中的导带的下边缘处的能量，并且第一氮化物半导体层中的导带的上边缘处的能量氮化物半导体层比在第二氮化物半导体层中的价带的上边缘处的能量低。

54. 发明申请

US20080099681A1 Infrared Detector and Process for Fabricating the Same 审中-公开
标题翻译：红外探测器及其制造方法
公开(公告)号：US20080099681A1
公开(公告)日：2008-05-01
申请号：US10589724
申请日：2004-02-17
申请人： Yasuhiro Shimada , Daisuke Ueda
发明人： Yasuhiro Shimada , Daisuke Ueda
IPC分类号： G01J5/00 , H01L21/00
CPC分类号： G01J5/20 , H01C7/045 , H01C17/08 , H01L27/14669 , H01L27/14683 , H01L31/09 , H01L31/109
摘要： First, an electrode is formed on an insulation layer that has been formed on a silicon substrate, when manufacturing an infrared detection device. The electrode has a shape matching that of a thermal resistance element constituting the infrared detection device. A semiconductor substrate is placed in a reaction chamber, given a predetermined potential, and heated. Next, a material of a thermal resistor substance constituting the thermal resistance element is vaporized into a gaseous material, and the gaseous material is ion-clusterized and supplied into the reaction chamber. The gaseous material collects toward the electrode as a result of an action of an electric field generated by giving the electrode the predetermined potential. The gaseous material that came into contact with the electrode is stabilized by receiving electrons, and thermally decomposes, thus growing a thermal resistor substance on the electrode.
摘要翻译：首先，在制造红外线检测装置时，在形成于硅基板上的绝缘层上形成电极。电极的形状与构成红外线检测装置的热电阻元件的形状一致。将半导体衬底放置在反应室中，给定预定电位并加热。接下来，构成热电阻元件的热电阻体的材料蒸发成气态物质，气态物质离子聚集并供给反应室。由于通过给予电极预定电位而产生的电场的作用，气态材料朝向电极聚集。与电极接触的气体材料通过接收电子而被稳定，并且热分解，从而在电极上生长热电阻物质。

55. 发明申请

US20060226415A1 Semiconductor integrated circuit device and vehicle-mounted radar system using the same 有权
公开(公告)号：US20060226415A1
公开(公告)日：2006-10-12
申请号：US11284049
申请日：2005-11-22
申请人： Masaaki Nishijima , Daisuke Ueda
发明人： Masaaki Nishijima , Daisuke Ueda
IPC分类号： H01L29/06
CPC分类号： H01L29/7787 , G01S7/032 , H01L23/481 , H01L23/66 , H01L24/24 , H01L24/82 , H01L29/2003 , H01L2223/6627 , H01L2224/24011 , H01L2224/24051 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/12032 , H01L2924/14 , H01L2924/1423 , H01L2924/1903 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor integrated circuit device includes a HFET formed on part of a substrate made of sapphire and including a Group III-V nitride semiconductor layer, a dielectric film formed on the substrate to cover the top and side surfaces and upper corners of the Group III-V nitride semiconductor layer, a microstrip line formed with the dielectric film interposed between the substrate and the microstrip line, and a drain lead which is formed on part of the dielectric film and through which the HFET is electrically connected to the microstrip line.

56. 外观设计

USD529077S1 Front panel portion of a paper feed cassette 有权
标题翻译：供纸盒的前面板部分
公开(公告)号：USD529077S1
公开(公告)日：2006-09-26
申请号：US29224746
申请日：2005-03-08
申请人： Noriaki Takahashi , Takanori Kanda , Daisuke Ueda , Takanobu Ohba
设计人： Noriaki Takahashi , Takanori Kanda , Daisuke Ueda , Takanobu Ohba

57. 发明申请

US20060108605A1 Schottky barrier diode and integrated circuit using the same 有权
标题翻译：肖特基势垒二极管和集成电路使用相同
公开(公告)号：US20060108605A1
公开(公告)日：2006-05-25
申请号：US11271833
申请日：2005-11-14
申请人： Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L29/739
CPC分类号： H01L29/66143 , H01L29/872
摘要： A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a substrate; and a high-resistance region formed in the first semiconductor layer and the second semiconductor layer and having higher resistance than the first semiconductor layer and the second semiconductor layer. A Schottky electrode and an ohmic electrode spaced from each other are formed on the second semiconductor layer in a portion surrounded with the high-resistance region.
摘要翻译：肖特基势垒二极管包括依次形成在衬底上的第一半导体层和第二半导体层; 以及形成在第一半导体层和第二半导体层中并且具有比第一半导体层和第二半导体层更高的电阻的高电阻区域。彼此间隔开的肖特基电极和欧姆电极在被高电阻区域包围的部分中形成在第二半导体层上。

58. 发明授权

US06999396B2 Initialization method of optical recording medium 失效
标题翻译：光记录介质的初始化方法
公开(公告)号：US06999396B2
公开(公告)日：2006-02-14
申请号：US10474085
申请日：2003-02-07
申请人： Kotaro Kurokawa , Takeshi Yamasaki , Daisuke Ueda , Shigeki Takagawa , Masanobu Yamamoto
发明人： Kotaro Kurokawa , Takeshi Yamasaki , Daisuke Ueda , Shigeki Takagawa , Masanobu Yamamoto
IPC分类号： G11B7/00
CPC分类号： G11B7/268 , G11B7/24038 , G11B7/252 , G11B2007/0013
摘要： An initialization method of an optical recording medium having a plurality of optical recording layers capable of reducing initialization unevenness due to light interference caused at the time of initialization without deteriorating information recording/reproducing signal characteristics of the optical recording layers is provided. An initialization method of an optical recording medium, wherein a second optical recording layer and a first optical recording layer are stacked via an interlayer on a substrate in an order, a protective layer is formed further on the first optical recording layer, a recording film in the first optical recording layer comprises a phase change type recording material, and a recording/reproducing light is irradiated from the protective film side at the time of recording/reproducing, and in a step of initializing by irradiating an initializing light on the first optical recording layer from the protective film side, the first optical recording layer is initialized so that an energy density ID1 per unit area of an incident light of the initializing light at respective points in a light convergence region converged on the first optical recording layer and an energy density ID2 per unit area at the respective points of the light convergence region of a return light, which is the initializing light transmitted through the first optical recording layer to reach the second optical recording layer, reflected on the second optical recording layer and again returned to the first optical recording layer, satisfy ID2/ID1≦0.002.
摘要翻译：提供了具有多个光记录层的光记录介质的初始化方法，其能够在初始化时引起由于光干扰引起的初始化不均匀性，而不会使信息记录/再现信号特性的光记录层恶化。一种光记录介质的初始化方法，其中第二光记录层和第一光记录层经由基板上的中间层依次层叠，在第一光记录层上进一步形成保护层，记录膜第一光记录层包括相变型记录材料，并且在记录/再现时从保护膜侧照射记录/再现光，并且在通过在第一光学记录上照射初始化光来进行初始化的步骤从保护膜侧开始，第一光记录层被初始化，使得会聚在第一光记录层上的光会聚区域各点处的初始化光的入射光的每单位面积的能量密度ID 1和能量在作为初始化的返回光的光会聚区域的各个点处的单位面积的密度ID 2 透射通过第一光学记录层的光到达第二光学记录层，在第二光学记录层上反射并再次返回到第一光学记录层，满足ID 2 / ID 1 <= 0.002。

59. 发明申请

US20050152430A1 Laser device 失效
标题翻译：激光设备
公开(公告)号：US20050152430A1
公开(公告)日：2005-07-14
申请号：US11023419
申请日：2004-12-29
申请人： Toshikazu Onishi , Kazutoshi Onozawa , Shinji Yoshida , Daisuke Ueda
发明人： Toshikazu Onishi , Kazutoshi Onozawa , Shinji Yoshida , Daisuke Ueda
IPC分类号： H01S3/105 , G01N21/84 , H01S3/08 , H01S5/068 , H01S5/10 , H01S5/183
CPC分类号： H01S5/18394 , H01S5/1046 , H01S5/18319 , H01S5/1835
摘要： According to the present invention, a first p-side electrode 7A made of metal which is provided with regularly arranged holes 10 having a diameter smaller than a laser oscillation wavelength and a second p-side electrode 7B arranged around the periphery of the first p-type electrode 7A are used as a p-side mirror of a surface-emitting laser. Light in a resonator formed of a p-side electrode 7 and an n-type mirror 2 is first converted to a surface plasmon and then reconverted to the light by the p-side electrode 7A, and then emitted outside the resonator. This improves the light transmittance, thereby permitting use of metal which is considered to have inherently low light transmittance as a material for the p-side electrode 7. If the p-side electrode 7 is made of metal, operating voltage is reduced and heat dissipation improves, without causing a spike in a valence band, which occurs when a semiconductor layer is used. Further, due to the nonlinear effect of the mirror, optical feedback to the inside of the resonator is controlled, whereby a laser device with excellent noise characteristic is obtained.
摘要翻译：根据本发明，由金属制成的第一p侧电极7A，其具有规则排列的直径小于激光振荡波长的孔10，第二p侧电极7B布置在第一 p型电极7A用作表面发射激光器的p侧反射镜。首先将由p侧电极7和n型反射镜2形成的谐振器中的光转换为表面等离子体，然后通过p侧电极7A再次转换为光，然后发射到谐振器外部。这提高了透光率，从而允许使用被认为具有固有的低透光率的金属作为p侧电极7的材料。如果p侧电极7由金属制成，则工作电压降低，散热改善，而不会在使用半导体层时发生价带的尖峰。此外，由于反射镜的非线性效应，对谐振器内部的光反馈被控制，从而获得具有优异噪声特性的激光器件。

60. 发明申请

US20050082568A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050082568A1
公开(公告)日：2005-04-21
申请号：US10862452
申请日：2004-06-08
申请人： Yutaka Hirose , Daisuke Ueda , Tsuyoshi Tanaka , Yasuhiro Uemoto , Tomohiro Murata
发明人： Yutaka Hirose , Daisuke Ueda , Tsuyoshi Tanaka , Yasuhiro Uemoto , Tomohiro Murata
IPC分类号： H01L21/28 , H01L21/338 , H01L29/20 , H01L29/417 , H01L29/778 , H01L29/812 , H01L31/0328
CPC分类号： H01L29/7787 , H01L29/2003
摘要： A semiconductor device has a sapphire substrate, a semiconductor layer made of GaN provided on the sapphire substrate, a multilayer film provided on the semiconductor layer, and an electrode in ohmic contact with the multilayer film. The multilayer film has been formed by alternately stacking two types of semiconductor layers having different amounts of piezopolarization or different amounts of spontaneous polarization and each containing an n-type impurity so that electrons are induced at the interface between the two types of semiconductor layers. This allows the contact resistance between the electrode and the multilayer film and a parasitic resistance in a current transmission path to be reduced to values lower than in a conventional semiconductor device.
摘要翻译：半导体器件具有蓝宝石衬底，设置在蓝宝石衬底上的由GaN制成的半导体层，设置在半导体层上的多层膜和与该多层膜欧姆接触的电极。已经通过交替地堆叠具有不同量的极化或不同量的自发极化的两种类型的半导体层，并且每个含有n型杂质，以便在两种类型的半导体层之间的界面处诱导电子而形成多层膜。这允许电极和多层膜之间的接触电阻和电流传输路径中的寄生电阻降低到比常规半导体器件中的值更低的值。

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