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51. 发明授权

US07097735B2 Plasma processing device 失效
标题翻译：等离子处理装置
公开(公告)号：US07097735B2
公开(公告)日：2006-08-29
申请号：US10296614
申请日：2002-03-28
申请人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
发明人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/3244 , C23C16/511 , C30B25/105 , H01J37/32192
摘要： In a microwave plasma processing apparatus that uses a radial line slot antenna, the efficiency of cooling of a shower plate is optimized and simultaneously the efficiency of microwave excitation is optimized, by causing a radiation surface of the radial line slot antenna to make an intimate contact with a cover plate that forms a part of an outer wall of the processing chamber and makes an intimate contact with the shower plate.
摘要翻译：在使用径向线槽天线的微波等离子体处理装置中，优化喷淋板的冷却效率，同时通过使径向线槽天线的辐射面进行紧密接触，微波激发的效率最优化具有形成处理室的外壁的一部分并与淋浴板紧密接触的盖板。

52. 发明申请

US20060118241A1 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US20060118241A1
公开(公告)日：2006-06-08
申请号：US11337026
申请日：2006-01-23
申请人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
发明人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/3222 , H01J37/32192 , H01J37/32229 , H01J37/3244
摘要： In a microwave plasma processing apparatus, the reflection of microwave by the joint unit between the microwave supplying waveguide and the microwave antenna is reduced by providing a taper surface or a member having a medium permittivity between the microwave supplying waveguide and the microwave antenna so as to moderate an impedance change. Accordingly, the efficiency of power supplying is improved, and reduced discharge ensures stable formation of plasma.
摘要翻译：在微波等离子体处理装置中，通过在微波供给波导与微波天线之间设置锥形表面或具有介质介电常数的构件来减小微波提供波导与微波天线之间的接合单元的微波反射，从而中等阻抗变化。因此，提高供电效率，减少放电确保等离子体的稳定形成。

53. 发明授权

US06975018B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06975018B2
公开(公告)日：2005-12-13
申请号：US10452000
申请日：2001-12-27
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Masaki Hirayama , Yasuyukil Shirai
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Masaki Hirayama , Yasuyukil Shirai
IPC分类号： H01L21/28 , H01L21/306 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/336 , H01L21/76 , H01L21/8234 , H01L21/8239 , H01L21/8246 , H01L21/8247 , H01L27/00 , H01L27/088 , H01L27/105 , H01L27/115 , H01L27/12 , H01L29/49 , H01L29/51 , H01L29/78 , H01L29/786 , H01L29/788 , H01L29/792 , H01L23/58
CPC分类号： H01L21/28202 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02307 , H01L21/02315 , H01L21/30604 , H01L21/3144 , H01L21/3145 , H01L21/31612 , H01L21/31662 , H01L21/3185 , H01L21/823462 , H01L27/105 , H01L27/1052 , H01L27/11526 , H01L27/11546 , H01L27/11568 , H01L27/12 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/66757 , H01L29/78603 , H01L29/78645
摘要： In a fabrication method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of a silicon surface in advance, and the hydrogen is removed by exposing the silicon surface to a first inert gas plasma. Thereafter, plasma is generated by a mixed gas of a second inert gas and one or more gaseous molecules, and a silicon compound layer containing at least a part of the elements constituting the gaseous molecules is formed on the surface of the silicon gas.
摘要翻译：在包括多个硅基晶体管或电容器的半导体器件的制造方法中，预先至少在硅表面的一部分中存在氢，并且通过将硅表面暴露于第一惰性气体等离子体来除去氢。此后，通过第二惰性气体和一种或多种气体分子的混合气体产生等离子体，并且在硅气体的表面上形成含有构成气体分子的至少一部分元素的硅化合物层。

54. 发明授权

US06620290B2 Plasma process apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06620290B2
公开(公告)日：2003-09-16
申请号：US09758292
申请日：2001-01-12
申请人： Tatsushi Yamamoto , Masaya Okamoto , Masaki Hirayama , Tadahiro Ohmi
发明人： Tatsushi Yamamoto , Masaya Okamoto , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： H05H100
CPC分类号： H01J37/32192 , C23C16/511
摘要： A plurality of microwave introduction windows are placed at the top wall of the reaction chamber. Microwaves of the same power are introduced into, e.g., two microwave introduction windows that are equivalent in location relationship with respect to the sidewall of the reaction chamber, while microwaves of different power are introduced into, e.g., two microwave introduction windows that are non-equivalent in location relationship with respect to the sidewall. Thus, a cost-effective plasma process apparatus is obtained which can realize uniform plasma processing even if the plasma being generated within the reaction chamber has varied load impedance.
摘要翻译：多个微波引入窗口放置在反应室的顶壁处。相同功率的微波被引入到例如两个相对于反应室的侧壁的位置关系相等的微波引入窗口中，而不同功率的微波被引入到例如两个微波引入窗口中，等同于相对于侧壁的位置关系。因此，即使在反应室内产生的等离子体具有变化的负载阻抗，也可获得能够实现均匀等离子体处理的成本有效的等离子体处理装置。

55. 发明授权

US06603786B1 Excimer laser oscillation apparatus and method, excimer laser exposure apparatus, and laser tube 有权
标题翻译：准分子激光振荡装置和方法，准分子激光曝光装置和激光管
公开(公告)号：US06603786B1
公开(公告)日：2003-08-05
申请号：US09538284
申请日：2000-03-30
申请人： Tadahiro Ohmi , Nobuyoshi Tanaka , Masaki Hirayama
发明人： Tadahiro Ohmi , Nobuyoshi Tanaka , Masaki Hirayama
IPC分类号： H01S322
CPC分类号： H01S3/0975 , H01S3/08 , H01S3/225
摘要： This invention relates to an excimer laser oscillation apparatus which has a laser chamber which stores a laser gas containing a gas mixture of at least one inert gas selected from the group consisting of Kr, Ar, and Ne, and F2 gas, and in which an inner surface thereof has a reflection-free surface with respect to light of a desired wavelength of 248 nm, 193 nm, or 157 nm, and the uppermost surface of the inner surface consists of a fluoride, an optical resonator which is made up of a pair of reflection mirrors arranged to sandwich the laser chamber therebetween, and in which the reflectance of the reflection mirror on the output side is 90% or more and microwave introduction means, arranged on the laser chamber, for continuously exciting the laser gas in the laser chamber.
摘要翻译：准分子激光振荡装置技术领域本发明涉及一种准分子激光振荡装置，其具有：激光室，其存储含有选自Kr，Ar和Ne的至少一种惰性气体和F2气体的气体混合物的激光气体，其内表面相对于248nm，193nm或157nm的所需波长的光具有无反射的表面，并且内表面的最上表面由氟化物，由以下组成的光谐振器组成：一对反射镜，其布置成将激光室夹在其间，并且其中输出侧的反射镜的反射率为90％以上，并且布置在激光室上的微波引入装置用于连续激发激光中的激光气体房间。

56. 发明授权

US06446573B2 Plasma process device 有权
标题翻译：等离子体处理装置
公开(公告)号：US06446573B2
公开(公告)日：2002-09-10
申请号：US09925572
申请日：2001-08-09
申请人： Masaki Hirayama , Tadahiro Ohmi , Tatsushi Yamamoto , Takamitsu Tadera
发明人： Masaki Hirayama , Tadahiro Ohmi , Tatsushi Yamamoto , Takamitsu Tadera
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/511 , H01J37/3244
摘要： A plasma process device capable of forming homogeneous plasma and coping with a large size substrate less costly can be obtained. The plasma process device includes a processing chamber, microwave guiding means, a shower plate and a reaction gas supply passage. The microwave guiding means guides a microwave into the processing chamber. The shower plate has a gas inlet hole to supply to the processing chamber a reaction gas attaining a plasma state by the microwave, and a lower surface facing the processing chamber and an upper surface positioned on the opposite side of the lower surface. The reaction gas supply passage is positioned on the upper surface of the shower plate and supplies the reaction gas to the gas inlet hole. A wall surface of the reaction gas supply passage includes an upper surface of the shower plate and a conductor wall surface opposing the upper surface.
摘要翻译：可以获得能够形成均匀等离子体并且应对较大成本的大尺寸基板的等离子体处理装置。等离子体处理装置包括处理室，微波引导装置，喷淋板和反应气体供应通道。微波引导装置引导微波进入处理室。淋浴板具有气体入口孔，以通过微波向处理室供应达到等离子体状态的反应气体，以及面向处理室的下表面和位于下表面相对侧的上表面。反应气体供给通路位于喷淋板的上表面，将反应气体供给到气体导入孔。反应气体供给通道的壁面包括淋浴板的上表面和与上表面相对的导体壁表面。

57. 发明授权

US06331994B1 Excimer laser oscillation apparatus and method, excimer laser exposure apparatus, and laser tube 失效
标题翻译：准分子激光振荡装置和方法，准分子激光曝光装置和激光管
公开(公告)号：US06331994B1
公开(公告)日：2001-12-18
申请号：US08893977
申请日：1997-07-16
申请人： Tadahiro Ohmi , Nobuyoshi Tanaka , Masaki Hirayama
发明人： Tadahiro Ohmi , Nobuyoshi Tanaka , Masaki Hirayama
IPC分类号： H01S3097
CPC分类号： H01S3/0975 , H01S3/08 , H01S3/225
摘要： This invention relates to an excimer laser oscillation apparatus which has a laser chamber which stores a laser gas containing a gas mixture of at least one inert gas selected from the group consisting of Kr, Ar, and Ne, and F2 gas, and in which an inner surface thereof has a reflection-free surface with respect to light of a desired wavelength of 248 nm, 193 nm, or 157 nm, and the uppermost surface of the inner surface consists of a fluoride, an optical resonator which is made up of a pair of reflection mirrors arranged to sandwich the laser chamber therebetween, and in which the reflectance of the reflection mirror on the output side is 90% or more and microwave introduction means, arranged on the laser chamber, for continuously exciting the laser gas in the laser chamber.
摘要翻译：准分子激光振荡装置技术领域本发明涉及一种准分子激光振荡装置，其具有：激光室，其存储含有选自Kr，Ar和Ne的至少一种惰性气体和F2气体的气体混合物的激光气体，其内表面相对于248nm，193nm或157nm的所需波长的光具有无反射的表面，并且内表面的最上表面由氟化物，由以下组成的光谐振器组成：一对反射镜，其布置成将激光室夹在其间，并且其中输出侧的反射镜的反射率为90％以上，并且布置在激光室上的微波引入装置用于连续激发激光中的激光气体房间。

58. 发明授权

US06286454B1 Plasma process device 有权
标题翻译：等离子体处理装置
公开(公告)号：US06286454B1
公开(公告)日：2001-09-11
申请号：US09583161
申请日：2000-05-30
申请人： Masaki Hirayama , Tadahiro Ohmi , Tatsushi Yamamoto , Takamitsu Tadera
发明人： Masaki Hirayama , Tadahiro Ohmi , Tatsushi Yamamoto , Takamitsu Tadera
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/511 , H01J37/3244
摘要： A plasma process device capable of forming homogeneous plasma and coping with a large size substrate less costly can be obtained. The plasma process device includes a processing chamber, microwave guiding device, a shower plate and a reaction gas supply passage. The microwave guiding device guides a microwave into the processing chamber. The shower plate has a gas inlet hole to supply to the processing chamber a reaction gas attaining a plasma state by the microwave, and a lower surface facing the processing chamber and an upper surface positioned on the opposite side of the lower surface. The reaction gas supply passage is a positioned on the upper surface of the shower plate and supplies the reaction gas to the gas inlet hole. A wall surface of the reaction gas supply passage includes an upper surface of the shower plate and a conductor wall surface opposing the upper surface.
摘要翻译：可以获得能够形成均匀等离子体并且应对较大成本的大尺寸基板的等离子体处理装置。等离子体处理装置包括处理室，微波引导装置，喷淋板和反应气体供给通道。微波引导装置引导微波进入处理室。淋浴板具有气体入口孔，以通过微波向处理室供应达到等离子体状态的反应气体，以及面向处理室的下表面和位于下表面相对侧的上表面。反应气体供给通道位于淋浴板的上表面上，并将反应气体供给到气体入口孔。反应气体供给通道的壁面包括淋浴板的上表面和与上表面相对的导体壁表面。

59. 发明授权

US08573151B2 Microwave plasma processing apparatus, dielectric window for use in the microwave plasma processing apparatus, and method for manufacturing the dielectric window 失效
标题翻译：微波等离子体处理装置，用于微波等离子体处理装置的电介质窗，以及制造电介质窗的方法
公开(公告)号：US08573151B2
公开(公告)日：2013-11-05
申请号：US12393724
申请日：2009-02-26
申请人： Tadahiro Ohmi , Masaki Hirayama , Tetsuya Goto , Yasuyuki Shirai , Masafumi Kitano , Kohei Watanuki , Takaaki Matsuoka , Shigemi Murakawa
发明人： Tadahiro Ohmi , Masaki Hirayama , Tetsuya Goto , Yasuyuki Shirai , Masafumi Kitano , Kohei Watanuki , Takaaki Matsuoka , Shigemi Murakawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , B05D5/06 , B05D3/02
CPC分类号： H01J37/32192 , H01J37/32238
摘要： A conventional microwave plasma processing apparatus, even when krypton (Kr) is used as a plasma-generation gas, can only obtain an oxide film or a nitride film having the same level of characteristics as those obtained when a rare gas such as argon (Ar) is used as a plasma-generation gas. Accordingly, instead of forming a dielectric window of a microwave plasma processing apparatus with only a ceramic member, a planarization film capable of obtaining a stoichiometric SiO2 composition by thermal treatment is coated on one of a plurality of surfaces of the ceramic member, the surface facing a process space, and then thermally-treated, thereby forming a planarization insulation film having a very flat and dense surface. A corrosion-resistant film is formed on the planarization insulation film.
摘要翻译：传统的微波等离子体处理装置即使使用氪（Kr）作为等离子体产生气体，也只能得到与稀有气体例如氩气（Ar）相同的特性水平的氧化膜或氮化物膜）用作等离子体发生气体。因此，代替形成仅具有陶瓷构件的微波等离子体处理装置的介电窗口，可以通过热处理获得化学计量的SiO 2组成的平坦化膜涂覆在陶瓷构件的多个表面中的一个表面上，处理空间，然后热处理，从而形成具有非常平坦和致密表面的平坦化绝缘膜。在平坦化绝缘膜上形成耐腐蚀膜。

60. 发明授权

US08568556B2 Plasma processing apparatus and method for using plasma processing apparatus 失效
标题翻译：等离子体处理装置及其等离子体处理装置的使用方法
公开(公告)号：US08568556B2
公开(公告)日：2013-10-29
申请号：US12663662
申请日：2008-06-11
申请人： Masaki Hirayama , Tadahiro Ohmi
发明人： Masaki Hirayama , Tadahiro Ohmi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/3222 , H01J37/32229 , H01J37/32238
摘要： The plasma processing apparatus includes: a processing container including a metal; an electromagnetic wave source outputting an electromagnetic wave; a dielectric plate facing an inner wall of the processing container and transmitting the electromagnetic wave, which is output from the electromagnetic wave source, into the processing container; and a groove formed in an inner surface of the processing container and functioning as a propagation disturbing portion. If a low frequency microwave is supplied, the propagation of a conductor surface wave can be suppressed by the groove.
摘要翻译：等离子体处理装置包括：包括金属的处理容器; 输出电磁波的电磁波源; 面向处理容器的内壁的电介质板，将从电磁波源输出的电磁波传送到处理容器内; 以及形成在处理容器的内表面中并用作传播干扰部分的凹槽。如果提供低频微波，则可以通过沟槽来抑制导体表面波的传播。

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