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51. 发明授权

US08853722B2 Semiconductor light-emitting device and method for forming the same 有权
标题翻译：半导体发光器件及其形成方法
公开(公告)号：US08853722B2
公开(公告)日：2014-10-07
申请号：US13045202
申请日：2011-03-10
申请人： Min-Hsun Hsieh , Chia-Fen Tsai
发明人： Min-Hsun Hsieh , Chia-Fen Tsai
IPC分类号： H01L33/50 , H01L33/40 , H01L33/46 , H01L33/00 , H01L33/42
CPC分类号： H01L33/005 , H01L33/0079 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/50 , H01L33/505 , H01L2933/0016 , H01L2933/0033 , H01L2933/0041
摘要： A semiconductor light-emitting device includes a light-impervious substrate, a bonding structure, a semiconductor light-emitting stack, and a fluorescent material structure overlaying the semiconductor light-emitting stack. The semiconductor light-emitting stack is separated from a growth substrate and bonded to the light-impervious substrate via the bonding structure. A method for producing the semiconductor light-emitting device includes separating a semiconductor light-emitting stack from a growth substrate, bonding the semiconductor light-emitting stack to a light-impervious substrate, and forming a fluorescent material structure over the semiconductor light-emitting stack.
摘要翻译：半导体发光器件包括不透光衬底，接合结构，半导体发光叠层和覆盖半导体发光叠层的荧光材料结构。半导体发光堆叠与生长衬底分离，并通过接合结构结合到不透光衬底上。一种半导体发光装置的制造方法，其特征在于，将半导体发光叠层与生长基板分离，将所述半导体发光叠层结合到不透光性基板上，在所述半导体发光层叠体上形成荧光体结构体。

52. 发明授权

US08530927B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08530927B2
公开(公告)日：2013-09-10
申请号：US13608750
申请日：2012-09-10
申请人： Chien-Fu Huang , Min-Hsun Hsieh , Chih-Chiang Lu , Chia-Liang Hsu , Shih-I Chen
发明人： Chien-Fu Huang , Min-Hsun Hsieh , Chih-Chiang Lu , Chia-Liang Hsu , Shih-I Chen
IPC分类号： H01L33/60 , H01L33/62
CPC分类号： H01L33/24 , H01L24/05 , H01L33/0079 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/387 , H01L33/62 , H01L2224/05552 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and having a first width, and a first length greater than the first width, and a second branch extending from the first branch and having a second width larger than the first width, and a second length greater than the second width; and an electrical contact structure between the second branch and the semiconductor light-emitting stack.
摘要翻译：发光装置包括半导体发光叠层; 形成在半导体发光叠层上的电流注入部分; 具有从所述电流注入部分发射并具有第一宽度和大于所述第一宽度的第一长度的第一分支的延伸部分和从所述第一分支延伸并具有大于所述第一宽度的第二宽度的第二分支，以及大于第二宽度的第二长度; 以及第二分支和半导体发光叠层之间的电接触结构。

53. 发明授权

US08519430B2 Optoelectronic device and method for manufacturing the same 有权
标题翻译：光电子器件及其制造方法
公开(公告)号：US08519430B2
公开(公告)日：2013-08-27
申请号：US13225117
申请日：2011-09-02
申请人： Wei-Chih Peng , Min-Hsun Hsieh , Ming-Chi Hsu , Wei-Yu Yen , Chun-Kai Wang , Yen-Chih Chen , Schang-Jing Hon , Hsin-Ying Wang , Chien-Kai Chung
发明人： Wei-Chih Peng , Min-Hsun Hsieh , Ming-Chi Hsu , Wei-Yu Yen , Chun-Kai Wang , Yen-Chih Chen , Schang-Jing Hon , Hsin-Ying Wang , Chien-Kai Chung
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L31/0543 , H01L31/0547 , H01L31/075 , H01L33/0066 , H01L33/12 , H01L33/16 , H01L33/305 , H01L33/46 , Y02E10/52 , Y02E10/548
摘要： An optoelectronic device includes a substrate and a first transition stack formed on the substrate including at least a first transition layer formed on the substrate and having at least one hollow component formed inside the first transition layer, and a second transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer formed on the first transition layer.
摘要翻译：光电子器件包括衬底和形成在衬底上的第一过渡堆叠，其包括至少形成在衬底上的第一过渡层，并且具有形成在第一过渡层内部的至少一个中空部件，以及第二过渡层，其中第二过渡层是形成在第一过渡层上的无意掺杂层或未掺杂层。

54. 发明授权

US08344353B2 Light emitting diode having a transparent substrate 有权
标题翻译：具有透明基板的发光二极管
公开(公告)号：US08344353B2
公开(公告)日：2013-01-01
申请号：US13114384
申请日：2011-05-24
申请人： Min-Hsun Hsieh , Kuen-Ru Chuang , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou
发明人： Min-Hsun Hsieh , Kuen-Ru Chuang , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou
IPC分类号： H01L29/06 , H01L31/072 , H01L31/019 , H01L31/0328 , H01L31/0336
CPC分类号： H01L33/16 , H01L21/2007 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/32 , H01L33/42
摘要： A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
摘要翻译：本发明的一个实施例公开了一种包括发光层，非晶界面层和下电极的多层结构。发光层具有上侧，下侧和侧面。不是用于生长发光层的非晶界面层布置在下侧并且远离发光层。下电极布置在侧面并且电直接连接到非晶界面层。

55. 发明授权

US08278672B2 Semiconductor light-emitting device and fabrication method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08278672B2
公开(公告)日：2012-10-02
申请号：US11727378
申请日：2007-03-26
申请人： Ya-Ju Lee , Ta-Cheng Hsu , Ming-Ta Chin , Yen-Wen Chen , Wu-Tsung Lo , Chung-Yuan Li , Min-Hsun Hsieh
发明人： Ya-Ju Lee , Ta-Cheng Hsu , Ming-Ta Chin , Yen-Wen Chen , Wu-Tsung Lo , Chung-Yuan Li , Min-Hsun Hsieh
IPC分类号： H01L33/22
CPC分类号： H01L33/16 , H01L33/22
摘要： A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a semiconductor substrate. The semiconductor substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0 11] or [01 1] from [100], or toward [011] or [0 11] from [ 100] so that the upper surface of the semiconductor substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.
摘要翻译：公开了一种半导体发光器件。半导体发光器件包括设置在半导体衬底上的多层外延结构。半导体衬底具有与其上表面垂直的预定晶格方向，其中预定晶格方向从[100]或[100]或[011]或[011]到[011]或[011] ]，使得半导体衬底的上表面包括具有不同晶格面方向的至少两个晶格面。多层外延结构具有垂直于预定晶格方向的粗糙化的上表面。本发明还公开了一种制造半导体发光器件的方法。

56. 发明授权

US08274156B2 Optoelectronic semiconductor device 有权
标题翻译：光电半导体器件
公开(公告)号：US08274156B2
公开(公告)日：2012-09-25
申请号：US12591617
申请日：2009-11-25
申请人： Wei-Yo Chen , Yen-Wen Chen , Chien-Yuan Wang , Min-Hsun Hsieh , Tzer-Perng Chen
发明人： Wei-Yo Chen , Yen-Wen Chen , Chien-Yuan Wang , Min-Hsun Hsieh , Tzer-Perng Chen
IPC分类号： H01L23/528
CPC分类号： H01L33/38 , H01L24/02 , H01L31/022408 , H01L31/022433 , H01L33/382 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , Y02E10/50 , H01L2924/00
摘要： An optoelectronic semiconductor device includes a substrate, a semiconductor system having an active layer formed on the substrate and an electrode structure formed on the semiconductor system, wherein the layout of the electrode structure having at least a first conductivity type contact zone or a first conductivity type bonding pad, a second conductivity type bonding pad, a first conductivity type extension electrode, and a second conductivity type extension electrode wherein the first conductivity type extension electrode and the second conductivity type extension electrode have three-dimensional crossover, and partial of the first conductivity type extension electrode and the first conductivity type contact zone or the first conductivity type bonding pad are on the opposite sides of the active layer.
摘要翻译：光电子半导体器件包括衬底，具有形成在衬底上的有源层和形成在半导体系统上的电极结构的半导体系统，其中具有至少第一导电类型接触区或第一导电类型的电极结构的布局接合焊盘，第二导电型接合焊盘，第一导电型延伸电极和第二导电型延伸电极，其中第一导电类型延伸电极和第二导电类型延伸电极具有三维交叉，部分第一导电性第一导电型接触区或第一导电型接合垫位于有源层的相对侧上。

57. 发明申请

US20120104455A1 OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：光电装置及其制造方法
公开(公告)号：US20120104455A1
公开(公告)日：2012-05-03
申请号：US13225117
申请日：2011-09-02
申请人： Wei-Chih PENG , Min-Hsun Hsieh , Ming-Chi Hsu , Wei-Yu Yen , Chun-Kai Wang , Yen-Chih Chen , Schang-Jing Hon , Hsin-Ying Wang , Chien-Kai Chung
发明人： Wei-Chih PENG , Min-Hsun Hsieh , Ming-Chi Hsu , Wei-Yu Yen , Chun-Kai Wang , Yen-Chih Chen , Schang-Jing Hon , Hsin-Ying Wang , Chien-Kai Chung
IPC分类号： H01L33/60 , H01L33/26
CPC分类号： H01L33/22 , H01L31/0543 , H01L31/0547 , H01L31/075 , H01L33/0066 , H01L33/12 , H01L33/16 , H01L33/305 , H01L33/46 , Y02E10/52 , Y02E10/548
摘要： An optoelectronic device includes a substrate and a first transition stack formed on the substrate including at least a first transition layer formed on the substrate and having at least one hollow component formed inside the first transition layer, and a second transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer formed on the first transition layer.
摘要翻译：光电子器件包括衬底和形成在衬底上的第一过渡堆叠，其包括至少形成在衬底上的第一过渡层，并且具有形成在第一过渡层内部的至少一个中空部件，以及第二过渡层，其中第二过渡层是形成在第一过渡层上的无意掺杂层或未掺杂层。

58. 发明授权

US08054409B2 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US08054409B2
公开(公告)日：2011-11-08
申请号：US12659652
申请日：2010-03-16
申请人： Min-Hsun Hsieh , Chien-Yuan Wang
发明人： Min-Hsun Hsieh , Chien-Yuan Wang
IPC分类号： G02F1/1335 , G02F1/13357 , H01L33/00 , G09F13/04
CPC分类号： G02F1/133514 , G02B19/0028 , G02B19/0066 , G02B19/0071 , G02B19/0095 , G02B27/0927 , G02B27/095 , G02F1/133617 , H01L33/486 , H01L2224/48091 , H01L2924/01322 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device including a light-spreading device having a wing-shaped protrusion part, a light-entering surface that includes an uneven surface, and a recess located away from the light-entering surface; an optoelectronic device disposed under the uneven surface and emitting light towards the light-entering surface; and a wavelength-converting material formed on a path along light traveling from the optoelectronic device. The device may additionally include a liquid crystal layer for controlling light flux from the light-spreading device; a color filter layer including a plurality of pixels provided adjacent to the liquid crystal layer. The device may be a liquid crystal display having a backlight module, a liquid crystal layer, and a color filter layer. An ultraviolet unit for emitting ultraviolet light may be disposed in the backlight module. At least one pixel may be filled with a wavelength-converting material that can convert ultraviolet light into green light.
摘要翻译：一种发光装置，包括具有翼形突起部分的光扩散装置，包括不平坦表面的光入射表面和远离光入射表面的凹部; 设置在所述不平坦表面下方并向所述光进入表面发射光的光电子器件; 以及沿着从光电子器件传播的光的路径上形成的波长转换材料。该装置还可以包括用于控制来自光扩散装置的光通量的液晶层; 滤色器层，包括与液晶层相邻设置的多个像素。该装置可以是具有背光模块，液晶层和滤色器层的液晶显示器。用于发射紫外线的紫外线单元可以设置在背光模块中。可以用可以将紫外光转换成绿色光的波长转换材料填充至少一个像素。

59. 发明授权

US07884376B2 Optoelectronic semiconductor device and manufacturing method thereof 有权
标题翻译：光电半导体器件及其制造方法
公开(公告)号：US07884376B2
公开(公告)日：2011-02-08
申请号：US12230203
申请日：2008-08-26
申请人： Chih-Chiang Lu , Wei-Chih Peng , Shiau-Huei San , Min-Hsun Hsieh
发明人： Chih-Chiang Lu , Wei-Chih Peng , Shiau-Huei San , Min-Hsun Hsieh
IPC分类号： H01L27/15 , H01L33/00
CPC分类号： H01L33/62 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/28 , H01L33/30 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/44 , H01L33/504 , H01L33/508 , H01L33/56 , H01L33/60
摘要： An embodiment of the invention discloses an optoelectronic semiconductor device comprising a semiconductor system capable of performing a conversion between light energy and electrical energy; an interfacial layer formed on at least two surfaces of the semiconductor system; an electrical conductor; and an electrical connector electrically connecting the semiconductor system to the electric conductor.
摘要翻译：本发明的实施例公开了一种光电子半导体器件，其包括能够执行光能和电能之间的转换的半导体系统; 形成在所述半导体系统的至少两个表面上的界面层; 电导体以及将半导体系统电连接到电导体的电连接器。

60. 发明申请

US20100213493A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20100213493A1
公开(公告)日：2010-08-26
申请号：US12753551
申请日：2010-04-02
申请人： Tzu-Chieh HSU , Ching-San Tao , Chen Ou , Min-Hsun Hsieh , Chao Hsing Chen
发明人： Tzu-Chieh HSU , Ching-San Tao , Chen Ou , Min-Hsun Hsieh , Chao Hsing Chen
IPC分类号： H01L33/42 , H01L33/46 , H01L33/60
CPC分类号： H01L33/20 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/42
摘要： A light-emitting device including: a light-emitting stacked layer having first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface; a first planarization layer formed on a first partial of the upper surface of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and a second partial of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer; and a first electrode formed on the first portion of the first transparent conductive oxide layer.
摘要翻译：一种发光器件，包括：具有第一导电类型半导体层的发光层叠层，形成在第一导电型半导体层上的发光层和形成在发光层上的第二导电型半导体层，其中，第二导电类型半导体层的上表面是纹理表面; 形成在所述第二导电型半导体层的上表面的第一部分上的第一平坦化层; 形成在所述第一平坦化层上的第一透明导电氧化物层和所述第二导电类型半导体层的第二部分，所述第二导电类型半导体层包括与所述第一平坦化层接触的第一部分和具有与所述第二平坦化层接触的第一多个空腔的第二部分导电型半导体层; 以及形成在第一透明导电氧化物层的第一部分上的第一电极。

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