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51. 发明授权

US09048288B2 Method for treating a part made from a decomposable semiconductor material 有权
标题翻译：用于处理由可分解的半导体材料制成的零件的方法
公开(公告)号：US09048288B2
公开(公告)日：2015-06-02
申请号：US13111748
申请日：2011-05-19
申请人： Michel Bruel
发明人： Michel Bruel
IPC分类号： H01L21/30 , H01L21/322 , H01L21/302 , H01L21/762
CPC分类号： H01L21/76254
摘要： The present disclosure provides methods for treating a part made from a decomposable semiconductor material, and particularly, methods for detaching a surface film from the rest of such part. According to the provided methods, a burst or pulse of light particles of short duration and very high intensity is applied to the part in order to selectively heat, under substantially adiabatic conditions, an area of the part located at a predefined depth from the surface to a temperature higher than the decomposition temperature of the material, and subsequently a surface film is detached from the rest of the part at the heated area. In preferred embodiments, the decomposable semiconductor material comprises Ga, or comprises AlxGayIn1-x-yN, where 0≦x≦1, 0≦y≦1 and x+y≦1.
摘要翻译：本公开提供了用于处理由可分解半导体材料制成的部件的方法，特别是用于将表面膜与该部分的其余部分分离的方法。根据所提供的方法，将短时间和非常高强度的轻微颗粒的脉冲或脉冲施加到该部分，以便在基本上绝热的条件下选择性地加热位于距表面预定深度的部分的区域温度高于材料的分解温度，随后在加热区域从表面膜的其余部分脱离。在优选的实施方案中，可分解的半导体材料包括Ga，或包括Al x Ga y In 1-x-y N，其中0＆nlE; x＆nlE; 1,0，nlE; y＆nlE; 1和x + y＆nlE;

52. 发明授权

US08759196B2 Method for preparing a substrate by implantation and irradiation 有权
标题翻译：通过注入和照射制备衬底的方法
公开(公告)号：US08759196B2
公开(公告)日：2014-06-24
申请号：US13700435
申请日：2011-06-08
申请人： Michel Bruel
发明人： Michel Bruel
IPC分类号： H01L21/30
CPC分类号： H01L21/762 , H01L21/76254
摘要： A method for preparing a substrate for detaching a layer by irradiation of the substrate with a light flux for heating a buried region of the substrate and bringing about decomposition of the material of that region to detach the detachment layer. The method includes fabricating an intermediate substrate including a first buried layer, and a second covering layer that covers all or part of the first layer, with the covering layer being substantially transparent to the light flux and with the buried layer formed by implantation of particles into the substrate, followed by absorbing the flux, and selectively and adiabatically irradiating a treated region of the buried layer until at least partial decomposition of the material constituting it ensues.
摘要翻译：一种用于通过用于加热衬底的掩埋区域的光束照射衬底来制备用于分离层的衬底的方法，并且使该区域的材料分解以分离脱离层。该方法包括制造包括第一埋层的中间衬底和覆盖第一层的全部或部分的第二覆盖层，其中覆盖层对于光通量基本上是透明的，并且通过将颗粒注入形成的掩埋层然后吸收焊剂，并且选择性地和绝热地照射掩埋层的处理区域，直到构成材料的材料至少部分分解为止。

53. 发明申请

US20140158041A1 METHOD AND DEVICE FOR FABRICATING A LAYER IN SEMICONDUCTOR MATERIAL 有权
标题翻译：用于在半导体材料中制备层的方法和装置
公开(公告)号：US20140158041A1
公开(公告)日：2014-06-12
申请号：US14131295
申请日：2012-07-25
申请人： Michel Bruel
发明人： Michel Bruel
IPC分类号： C30B19/10 , C30B19/06
CPC分类号： C30B19/10 , C30B19/00 , C30B19/062 , C30B29/06 , C30B29/08 , H01L21/02532 , H01L21/02625
摘要： The invention concerns a method for fabricating a substrate in semiconductor material characterized in that it comprises the steps of: starting from a donor substrate in a first semiconductor material at an initial temperature, contacting a surface of the donor substrate with a bath of a second semiconductor material held in the liquid state at a temperature higher than the initial temperature, the second semiconductor material being chosen so that its melting point is equal to or lower than the melting point of the first semiconductor material, solidifying the bath material on the surface to thicken the donor substrate with a solidified layer. The invention also concerns a device for implementing the method.
摘要翻译：本发明涉及一种用于制造半导体材料中的衬底的方法，其特征在于其包括以下步骤：从初始温度下的第一半导体材料中的施主衬底开始，将供体衬底的表面与第二半导体在高于初始温度的温度下保持在液态的材料，选择第二半导体材料使其熔点等于或低于第一半导体材料的熔点，使表面上的浴材固化成稠化施主衬底具有固化层。本发明还涉及一种用于实现该方法的装置。

54. 发明申请

US20130072009A1 METHOD FOR PREPARING A SUBSTRATE BY IMPLANTATION AND IRRADIATION 有权
标题翻译：通过植入和辐射制备基材的方法
公开(公告)号：US20130072009A1
公开(公告)日：2013-03-21
申请号：US13700435
申请日：2011-06-08
申请人： Michel Bruel
发明人： Michel Bruel
IPC分类号： H01L21/762
CPC分类号： H01L21/762 , H01L21/76254
摘要： A method for preparing a substrate for detaching a layer by irradiation of the substrate with a light flux for heating a buried region of the substrate and bringing about decomposition of the material of that region to detach said detachment layer. The method includes fabricating an intermediate substrate including a first buried layer, and a second covering layer that covers all or part of the first layer, with the covering layer being substantially transparent to the light flux and with the buried layer formed by implantation of particles into the substrate, followed by absorbing the flux, and selectively and adiabatically irradiating a treated region of the buried layer until at least partial decomposition of the material constituting it ensues.
摘要翻译：一种用于通过用于加热衬底的掩埋区域的光束来照射衬底来制备用于分离层的衬底的方法，并且使该区域的材料分解以分离所述剥离层。该方法包括制造包括第一埋层的中间衬底和覆盖第一层的全部或部分的第二覆盖层，其中覆盖层对于光通量基本上是透明的，并且通过将颗粒注入形成的掩埋层然后吸收焊剂，并且选择性地和绝热地照射掩埋层的处理区域，直到构成材料的材料至少部分分解为止。

55. 发明申请

US20120161291A1 PROCESS FOR CLEAVING A SUBSTRATE 有权
标题翻译：清洗基板的工艺
公开(公告)号：US20120161291A1
公开(公告)日：2012-06-28
申请号：US13306591
申请日：2011-11-29
申请人： Michel Bruel
发明人： Michel Bruel
IPC分类号： H01L21/301 , H01L29/06
CPC分类号： C30B33/06 , C30B29/06 , H01L21/187 , H01L21/2007 , H01L21/304 , H01L21/76254
摘要： A process for cleaving a substrate for the purpose of detaching a film therefrom. The method includes the formation of a stress-generating structure locally bonded to the substrate surface and designed to expand or contract in a plane parallel to the substrate surface under the effect of a heat treatment; and the application of a heat treatment to the structure, designed to cause the structure to expand or contract so as to generate a plurality of local stresses in the substrate which generates a stress greater than the mechanical strength of the substrate in a cleavage plane parallel to the surface of the substrate defining the film to be detached, the stress leading to the cleavage of the substrate over the cleavage plane. Also, an assembly of a substrate and the stress-generating structure as well as use of the assembly in a semiconductor device for photovoltaic, optoelectronic or electronic applications.
摘要翻译：用于从基板上拆下薄膜的方法。该方法包括形成局部结合到基底表面的应力产生结构，并设计成在热处理的作用下平行于基底表面的平面中膨胀或收缩; 以及对该结构施加热处理，其被设计成使结构膨胀或收缩，从而在基板中产生多个局部应力，该应力在平行于该裂纹的解理平面中产生大于基板的机械强度的应力衬底的表面限定待分离的膜，导致在解理面上切割衬底的应力。而且，衬底和应力产生结构的组件以及组件在用于光伏，光电子或电子应用的半导体器件中的使用。

56. 发明申请

US20100288741A1 METHOD FOR HEATING A PLATE WITH A LIGHT STREAM 有权
标题翻译：用轻轻的加热板的方法
公开(公告)号：US20100288741A1
公开(公告)日：2010-11-18
申请号：US12680880
申请日：2008-09-26
申请人： Michel Bruel
发明人： Michel Bruel
IPC分类号： B23K26/00 , H05B1/00
CPC分类号： H01L21/268
摘要： The invention relates to a method for heating a wafer (1) comprising at least one layer to be heated (2) and a sub-layer (4), under the effect of at least one light flux pulse, comprising the following steps: selecting a light flux (7), a layer to be heated (2) such that the absorption coefficient of said flux by the layer to be heated (2) is low as long as the temperature of said layer to be heated is in the low temperature range (PBT) and said absorption coefficient increases significantly when the temperature of the layer to be heated enters a high temperature range (PHT); and selecting a sub-layer (4) such that the absorption coefficient of said light flux at said selected wavelength is high in said low temperature range (PBT) and the temperature enters the high temperature range (PHT) when said sub-layer is subject to the light flux; and applying said light flux (7) to said wafer (1).
摘要翻译：本发明涉及一种在至少一个光通量脉冲的作用下加热包括至少一个待加热层（2）和子层（4）的晶片（1）的方法，包括以下步骤：选择光通量（7），待加热层（2），使得待加热层（2）的所述焊剂的吸收系数低，只要所述被加热层的温度处于低温当被加热层的温度进入高温范围（PHT）时，吸收系数显着增加; 以及选择子层（4），使得所述选择的波长处的所述光通量的吸收系数在所述低温范围（PBT）为高，并且当所述子层为受试者时，温度进入高温范围（PHT）对光通量; 以及将所述光通量（7）施加到所述晶片（1）上。

57. 发明授权

US07300853B2 Thin layer semi-conductor structure comprising a heat distribution layer 有权
标题翻译：薄层半导体结构包括热分布层
公开(公告)号：US07300853B2
公开(公告)日：2007-11-27
申请号：US10928057
申请日：2004-06-02
申请人： Jean-Pierre Joly , Michel Bruel , Claude Jaussaud
发明人： Jean-Pierre Joly , Michel Bruel , Claude Jaussaud
IPC分类号： H01L29/76
CPC分类号： H01L21/76251 , H01L23/3735 , H01L2924/0002 , H01L2924/00
摘要： The invention concerns a thin layer semi-conductor structure including a semi-conductor surface layer (2) separated from a support substrate (1) by an intermediate zone (3), the intermediate zone (3) being a multi-layer electrically insulating the semi-conductor surface layer from the support substrate. The intermediate zone has a considered sufficiently good electrical quality of interface with the semi-conductor surface layer and includes at least one first layer, of satisfactory thermal conductivity to provide a considered as correct operation of the electronic device or devices which are to be elaborated from the semi-conductor surface layer (2), the intermediate zone including additionally a second insulating layer of low dielectric constant, located between the first layer and the support substrate.
摘要翻译：本发明涉及一种薄层半导体结构，其包括通过中间区（3）从支撑衬底（1）分离的半导体表面层（2），所述中间区（3）是多层电绝缘的半导体表面层从支撑基底。中间区域具有与半导体表面层的界面充分良好的电气质量，并且包括至少一个具有令人满意的导热性的第一层，以提供将要被阐述的电子设备或设备的正确操作所述半导体表面层（2），所述中间区域另外包括位于所述第一层和所述支撑衬底之间的低介电常数的第二绝缘层。

58. 发明授权

US07229899B2 Process for the transfer of a thin film 有权
标题翻译：薄膜转印工艺
公开(公告)号：US07229899B2
公开(公告)日：2007-06-12
申请号：US10667707
申请日：2003-09-22
申请人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
发明人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/26506 , Y10S438/977
摘要： A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.
摘要翻译：用于转移薄膜的方法包括形成夹杂物层以产生气态化合物的捕集阱。夹杂物可以是一个或多个植入区域的形式，其作为被配置成捕获植入物种的限制层。此外，夹杂物可以是通过化学气相沉积，外延生长，离子溅射或由任何上述方法形成的应力区域或层沉积的一个或多个层的形式。夹杂物也可以是通过初始载体的热处理或通过任何上述方法形成的层的热处理形成的区域，或者通过蚀刻层中的空腔而形成的区域。在随后的步骤中，将气体化合物引入到夹杂物层中以形成形成断裂平面的微空腔，通过该断裂平面可以将薄膜与基底的其余部分分离。

59. 再颁专利

USRE39484E1 Process for the production of thin semiconductor material films 有权
标题翻译：薄半导体材料薄膜的生产工艺
公开(公告)号：USRE39484E1
公开(公告)日：2007-02-06
申请号：US10449786
申请日：2003-05-30
申请人： Michel Bruel
发明人： Michel Bruel
IPC分类号： H01L21/42 , H01L21/324 , H01L21/477 , H01L29/12
CPC分类号： G01L9/0042 , B28D1/005 , B28D5/00 , H01L21/26506 , H01L21/76243 , H01L21/76254 , H01L33/0079 , H01L2221/68363 , Y10S148/012
摘要： Process for the preparation of thin monocrystalline or polycrystalline semiconductor material films, characterized in that it comprises subjecting a semiconductor material wafer having a planar face to the three following stages: a first stage of implantation by bombardment (2) of the face (4) of the said wafer (1) by means of ions creating in the volume of said wafer a layer (3) of gaseous microbubbles defining in the volume of said wafer a lower region (6) constituting the mass of the substrate and an upper region (5) constituting the thin film, a second stage of intimately contacting the planar face (4) of said wafer with a stiffener (7) constituted by at least one rigid material layer, a third stage of heat treating the assembly of said wafer (1) and said stiffener (7) at a temperature above that at which the ion bombardment (2) was carried out and sufficient to create by a crystalline rearrangement effect in said wafer (1) and a pressure effect in the said microbubbles, a separation between the thin film (5) and the mass of the substrate (6).
摘要翻译：用于制备薄单晶或多晶半导体材料膜的方法，其特征在于，其包括使具有平面的半导体材料晶片经历三个后续阶段：第一阶段通过轰击（2）的面（4）所述晶片（1）通过在所述晶片的体积中产生气体微泡的层（3），在所述晶片的体积中限定构成所述基板的质量的下部区域（6）和上部区域（5）），与所述晶片的平面（4）紧密接触的第二阶段与由至少一个刚性材料层构成的加强件（7），对所述晶片（1）的组件进行热处理的第三阶段，和所述加强件（7）的温度高于进行所述离子轰击（2）的温度，并且足以通过所述晶片（1）中的结晶重排效应产生并且所述加强件（7）的压力效应微泡，薄膜（5）与基底（6）的质量之间的分离。

60. 发明授权

US06891990B2 Optical device with integrated structure and wave deviation 失效
标题翻译：具有集成结构和波偏的光器件
公开(公告)号：US06891990B2
公开(公告)日：2005-05-10
申请号：US10471782
申请日：2002-03-12
申请人： Michel Bruel
发明人： Michel Bruel
IPC分类号： G02B6/35 , G02B26/02 , G02B26/08
CPC分类号： G02B26/004 , G02B6/3538 , G02B6/3546 , G02B6/3596
摘要： The invention relates to an optical device with an integrated structure for transporting at least one optical wave. The inventive device comprises at least one primary optical guiding means and at least two secondary optical guiding means which cut through the primary guiding means at junctions; a channel which passes through said junctions; a fluid section which fills at least one portion of said channel and which comprises one segment of a primary fluid, which can reflect the optical wave to be transported, and, on either side of said segment, a secondary fluid through which the optical wave can pass; means for moving said fluid section so as to direct selectively the primary fluid segment through said junctions; the channel passes through said junctions in such a way that, when the primary fluid segment is disposed in a selected junction, the transported optical wave is deviated from the primary optical guiding means towards the corresponding secondary optical guiding means, or vice versa.
摘要翻译：本发明涉及具有用于传送至少一个光波的集成结构的光学装置。本发明的装置包括至少一个主导光装置和至少两个辅助光引导装置，其在接合处切穿主导向装置; 通过所述连接点的通道; 流体部分，其填充所述通道的至少一部分，并且包括能够反射待传输的光波的一个主要流体段，并且在所述段的任一侧上包括次级流体，光波可以通过该次级流体通过; 用于移动所述流体部分以便选择性地引导主流体段通过所述连接点的装置; 通道以这样一种方式通过所述连接点，使得当主要流体段被布置在所选择的结中时，传输的光波从主要光学引导装置偏向相应的次级光学引导装置，反之亦然。

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