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    • 54. 发明授权
    • Liquid junction photoelectrodes using amorphous silicon-based thin film
semiconductor
    • 使用非晶硅基薄膜半导体的液相光电极
    • US4656103A
    • 1987-04-07
    • US736433
    • 1985-05-20
    • Benjamin ReichmanGao LiangKrishna Sapru
    • Benjamin ReichmanGao LiangKrishna Sapru
    • C25B1/00H01G9/20H01M6/36C25B1/02
    • H01G9/20C25B1/003Y02E60/368Y02P20/134Y02P20/135Y10S204/03
    • An amorphous silicon semiconductor alloy having multiple layers is used to form a photoelectrode (either a photoanode or a photocathode) for use in a photoelectrochemical cell for the photoelectrolysis of water to produce hydrogen or the conversion of solar energy into electrical energy. Each layer of the semiconductor alloy has a different dopant concentration ranging from no dopant to a heavy dopant concentration. The photoelectrochemical cell can utilize a photocathode and a conventional metal anode, a photoanode or both a photocathode and a photoanode according to the present invention. The semiconductor alloy of the photoelectrode is a-Si:F:H or a-Si:H.sub.x deposited on a reflective layer of aluminum or molybdenum which is deposited on a substrate of glass or stainless steel. A tunnelable oxide layer can be deposited or intrinsically formed to cover and protect the top surface of the semiconductor alloy body. The photoanode is of an n-type configuration while the photocathodes can be either a p-type or a P-I-N type configuration.
    • 使用具有多层的非晶硅半导体合金来形成用于光电化学电池的光电极(光电阳极或光电阴极),用于光电解水以产生氢气或将太阳能转换成电能。 半导体合金的每个层具有不同掺杂剂浓度,从不掺杂剂到重掺杂剂浓度。 光电化学电池可以利用根据本发明的光电阴极和常规金属阳极,光电阳极或光电阴极和光电阳极。 光电极的半导体合金是沉积在铝或钼的反射层上的a-Si:F:H或a-Si:Hx,其沉积在玻璃或不锈钢的基板上。 隧道状氧化物层可以沉积或固有地形成以覆盖并保护半导体合金体的顶表面。 光电阳极是n型结构,而光电阴极可以是p型或P-I-N型构型。
    • 55. 发明授权
    • Photoresponsive amorphous semiconductor materials, methods of making the
same, and photoanodes made therewith
    • 光反应性非晶半导体材料,其制造方法和由其制成的光电阳极
    • US4511638A
    • 1985-04-16
    • US499900
    • 1983-06-01
    • Krishna SapruBenjamin ReichmanGao Liang
    • Krishna SapruBenjamin ReichmanGao Liang
    • C25B1/00H01G9/20H01L31/04H01L31/20H01M14/00H01M6/36C25B11/10
    • C25B1/003H01G9/20H01L31/20H01M14/005Y02E10/542Y02P20/135Y10S204/03
    • A photoresponsive amorphous semiconductor material is modified by incorporating at least one compensating agent selected from a group consisting of hydrogen, lithium, fluorine, beryllium, aluminum, boron, magnesium, other Group I elements, and compounds of these elements. The semiconductor material is cathodically treated either simultaneously with or subsequent to this modification. The semiconductor material may be additionally modified by incorporating a second modifying agent selected from a group consisting of silicon, the transition elements, the lanthanides, and compounds of these elements. The semiconductor material also may be subjected to heat treatment in an inert atmosphere before the cathodic treatment.A photoanode utilizing the above described semiconductor material further includes a substrate to support a film of said material. The photoanode may additionally include a second semiconductor film having a small band gap inserted between said substrate and said first semiconductor film. These photoanodes may be used in an electrochemical cell for the conversion of light into electrical energy or energy stored in a fuel.
    • 通过掺入至少一种选自氢,锂,氟,铍,铝,硼,镁,其他I族元素的组分和这些元素的化合物来补偿光响应性非晶半导体材料。 半导体材料在该修改或同时进行阴极处理。 可以通过掺入选自硅,过渡元素,镧系元素和这些元素的化合物的第二改性剂来另外修饰半导体材料。 半导体材料也可以在阴极处理之前在惰性气氛中进行热处理。 利用上述半导体材料的光电阳极还包括用于支撑所述材料的膜的基板。 光电二极管还可以包括在所述衬底和所述第一半导体膜之间插入小带隙的第二半导体膜。 这些光电阳极可用于电化学电池中,用于将光转换成电能或存储在燃料中的能量。