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51. 发明申请

US20120085278A1 HIGH PRODUCTIVITY THIN FILM DEPOSITION METHOD AND SYSTEM 有权
标题翻译：高生产率薄膜沉积方法和系统
公开(公告)号：US20120085278A1
公开(公告)日：2012-04-12
申请号：US13157250
申请日：2011-06-09
申请人： Mehrdad M. Moslehi , Karl-Josef Kramer , Jay Ashjaee , George D. Kamian , David Mordo , Takao Yonehara
发明人： Mehrdad M. Moslehi , Karl-Josef Kramer , Jay Ashjaee , George D. Kamian , David Mordo , Takao Yonehara
IPC分类号： C30B23/06 , H01L21/673 , C30B23/02 , C23C16/455 , C23C16/46
CPC分类号： H01L21/67754 , C23C16/45585 , C23C16/481 , C23C16/54 , H01L21/02532 , H01L21/0262 , H01L21/6719 , H01L21/67757
摘要： High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.
摘要翻译：提供了高生产率薄膜沉积方法和工具，其中厚度在小于1微米至100微米范围内的薄膜半导体材料层沉积在反应器中的多个晶片上。将晶片装载在分批基座上，并且批量基座位于反应器中，使得在基座和反应器的内壁之间形成锥形气体流动空间。然后将反应性气体引导到锥形气体空间中并遍及每个晶片，从而改善每个晶片和从晶片到晶片的沉积均匀性。

52. 发明授权

US06645847B2 Microelectronic interconnect material with adhesion promotion layer and fabrication method 失效
公开(公告)号：US06645847B2
公开(公告)日：2003-11-11
申请号：US10060548
申请日：2002-01-30
申请人： Ajit P. Paranjpe , Mehrdad M. Moslehi , Boris Relja , Randhir S. Bubber , Lino A. Velo , Thomas R. Omstead , David R. Campbell, Sr. , David M. Leet , Sanjay Gopinath
发明人： Ajit P. Paranjpe , Mehrdad M. Moslehi , Boris Relja , Randhir S. Bubber , Lino A. Velo , Thomas R. Omstead , David R. Campbell, Sr. , David M. Leet , Sanjay Gopinath
IPC分类号： H01L214763
CPC分类号： H01L21/76846 , H01L21/2855 , H01L21/28556 , H01L21/28568 , H01L21/76843 , H01L21/76856 , H01L21/76876 , H01L21/76877 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A microelectronic semiconductor interconnect structure barrier and method of deposition provide improved conductive barrier material properties for high-performance device interconnects. The barrier includes a refractory metal such as cobalt, cobalt-based alloys, ruthenium or ruthenium-based alloys for promoting adhesion of copper. The barrier materials can be deposited by chemical-vapor deposition to achieve good step coverage and a relatively conformal thin film with a good nucleation surface for subsequent metallization such as copper metallization. In one embodiment, the barrier suppresses diffusion of copper into other layers of the device, including the inter-metal dielectric, pre-metal dielectric, and transistor structures.

53. 发明授权

US06596133B1 Method and system for physically-assisted chemical-vapor deposition 失效
标题翻译：物理辅助化学气相沉积的方法和系统
公开(公告)号：US06596133B1
公开(公告)日：2003-07-22
申请号：US09678467
申请日：2001-06-14
申请人： Mehrdad M. Moslehi , Ajit P. Paranjpe
发明人： Mehrdad M. Moslehi , Ajit P. Paranjpe
IPC分类号： C23C1432
CPC分类号： C23C14/3442 , C23C14/0031 , C23C14/3464 , C23C14/56 , C23C16/0281 , C23C16/48 , C23C16/54 , H01J37/3233 , H01J37/34
摘要： An apparatus and method for the deposition of thin film material layers provides improved use of processing chamber space for enhanced processing capability in the fabrication of microelectronic devices. In one embodiment, a physical-vapor deposition target offset from the processing chamber central axis, such as a target having an annular shape and central opening, deposits a material on a substrate while leaving the central region of the processing chamber available for other deposition techniques, including a centrally located sputtering target, CVD showerhead, or ion source. Alternatively, a collimator divides a processing chamber into sub-chambers and allows energetic species from a PVD target or ion source to pass to a substrate located in a separate sub-chamber for interaction with a CVD precursor without mixing the precursor and the plasma associated with the PVD or ion processes. The apparatus supports deposition of material from a single precursor in a manner that mimics atomic layer deposition since the process of subjecting a precursor to energetic species, such as ions or material atoms, allows disassociation of material from the precursor at lower temperatures.
摘要翻译：用于沉积薄膜材料层的装置和方法提供了改进的处理室空间的使用，用于在微电子器件的制造中增强处理能力。在一个实施例中，从处理室中心轴偏移的物理气相沉积靶，例如具有环形形状和中心开口的靶，将材料沉积在衬底上，同时使处理室的中心区域可用于其它沉积技术，包括中心位置的溅射靶，CVD喷头或离子源。或者，准直器将处理室划分为子室，并且允许来自PVD靶或离子源的能量物质传递到位于单独子室中的衬底，用于与CVD前体相互作用，而不混合前体和与 PVD或离子工艺。该设备支持以模拟原子层沉积的方式从单一前体沉积材料，因为使前体经受高能物质如离子或材料原子的过程允许材料在较低温度下与前体分离。

54. 发明授权

US06475359B1 Thin-film processing electromagnet with modified core for producing low-skew magnetic orientation 有权
标题翻译：具有改性芯的薄膜加工电磁铁，用于产生低偏磁磁取向
公开(公告)号：US06475359B1
公开(公告)日：2002-11-05
申请号：US09595932
申请日：2000-06-16
申请人： Mehrdad M. Moslehi , Shiyuan Cheng , Xiangqun Chen , Cecil J. Davis
发明人： Mehrdad M. Moslehi , Shiyuan Cheng , Xiangqun Chen , Cecil J. Davis
IPC分类号： C14C1435
CPC分类号： C23C14/3414 , C23C14/351 , C23C16/08 , C23C16/10 , C23C16/16 , C23C16/18 , H01F7/20
摘要： An electromagnet having one or more coils wrapped around a plate-shaped core produces a uniaxial magnetic field in the vicinity of a substrate surface for orienting a magnetic film deposited onto the substrate surface. Variations in the magnetic mass of the plate-shaped core or in the magnetic permeability of the core mass are made to reduce angular skew and to improve uniformity of the uniaxial magnetic field. The variations generally involve a reduction in magnetic mass or permeability near a center of the core with respect to a periphery of the core. Cavities of various sizes and shapes but having symmetry with a magnetic axis can be formed in the core for this purpose.
摘要翻译：具有缠绕在板状芯上的一个或多个线圈的电磁体在基板表面附近产生单轴磁场，用于使沉积在基板表面上的磁性膜定向。制成板状芯的磁性质量或芯体的磁导率的变化，以减小角偏移并提高单轴磁场的均匀性。这些变化通常涉及相对于芯的周边在芯的中心附近减小磁性质量或磁导率。为此，可以在芯中形成各种尺寸和形状但具有与磁轴对称的腔体。

55. 发明授权

US06378600B1 Thermally conductive chuck with thermally separated sealing structures 有权
标题翻译：带有热分离密封结构的导热卡盘
公开(公告)号：US06378600B1
公开(公告)日：2002-04-30
申请号：US09666172
申请日：2000-09-21
申请人： Mehrdad M. Moslehi
发明人： Mehrdad M. Moslehi
IPC分类号： F28F700
CPC分类号： H01L21/67126 , C23C14/50 , C23C14/541 , C23C16/4585 , C23C16/46 , C23C16/463 , C23C16/466 , H01J2237/2001 , H01L21/6831 , H01L21/68721 , H01L21/68785 , Y10T279/23
摘要： A chuck having two distinct portions mounts a substrate within a vacuum processing chamber. A first sealing stage confines a gas within a heat-transfer interface between one portion of the chuck and the substrate. A second sealing stage collects gas escaping from the heat-transfer interface within an intermediate space bounded by the two portions of the chuck and the substrate. Pressure in the intermediate space is reduced with respect to pressure at the heat-transfer interface to inhibit leakage of gas from the heat-transfer interface into the vacuum processing chamber.
摘要翻译：具有两个不同部分的卡盘将基板安装在真空处理室内。第一密封阶段将气体限制在卡盘的一部分和基底之间的传热界面内。第二密封阶段在由卡盘和基板的两个部分限定的中间空间内收集从传热界面逸出的气体。中间空间的压力相对于传热界面处的压力而减小，以抑制气体从传热界面泄漏到真空处理室中。

56. 发明授权

US06245655B1 Method for planarized deposition of a material 失效
标题翻译：材料平面沉积方法
公开(公告)号：US06245655B1
公开(公告)日：2001-06-12
申请号：US09285162
申请日：1999-04-01
申请人： Mehrdad M. Moslehi
发明人： Mehrdad M. Moslehi
IPC分类号： H01L2144
CPC分类号： H01L21/76879 , H01L21/7688
摘要： A method for selective deposition of a material, such as copper, to form planarized inlaid device interconnect structures, the method suppressing deposition of the material at other than the defined interconnect inlaid metal line trenches and via plug holes. Once a formation is filled with metallization material, deposition is automatically ceased in situ to form a globally planarized interconnect structure. In one embodiment, a blocking agent layer inhibits material nucleation and deposition at the substrate surface plane until the formation is filled, and then flows over the filled inlaid metallization structure to cease further material deposition and to form a globally planarized surface without a need for chemical-mechanical polishing of the metallization material. In another embodiment, an enhancement agent is provided within formations to reduce material nucleation time, resulting in selective deposition of the material proximate to the enhancement agent layer within trenches and holes. A nucleation suppressing agent can be included in the deposition ambient to increase nucleation delay and to suppress material deposition over the patterned field regions and on the formation sidewalls, thus limiting material deposition to within the trenches or holes from the bottom upward. Placement of the enhancement agent layer at the bottom of a device formation features promotes material deposition from the bottoms of the formation features up towards the substrate field surface plane, resulting in improved void-free filling of the via holes and trenches with large-grain inlaid metal for globally planarized interconnect fabrication.
摘要翻译：用于选择性沉积诸如铜的材料以形成平面化的嵌入式器件互连结构的方法，该方法抑制材料在限定的互连镶嵌的金属线沟槽之外的沉积以及通过插塞孔。一旦地层填充有金属化材料，就会自动停止沉积，以形成一个全局平面化的互连结构。在一个实施方案中，阻挡剂层抑制材料在基材表面平面上的成核和沉积，直到形成被填充，然后流过填充的镶嵌金属化结构以停止进一步的材料沉积并形成全局平坦化的表面而不需要化学 - 金属化材料的机械抛光。在另一个实施方案中，在地层内提供增强剂以减少材料成核时间，导致材料在沟槽和孔内靠近增强剂层的选择性沉积。成核抑制剂可以包括在沉积环境中以增加成核延迟并抑制在图案化的场区域和形成侧壁上的材料沉积，从而将材料沉积限制在从底部向上的沟槽或孔内。增强剂层位于器件形成特征底部的位置促进从地层特征的底部到衬底场表面平面的材料沉积，从而改善了通孔和沟槽的无空隙填充，其中大颗粒镶嵌金属用于全球平面化互连制造。

57. 发明授权

US06190732B1 Method and system for dispensing process gas for fabricating a device on a substrate 失效
标题翻译：用于分配用于在衬底上制造器件的工艺气体的方法和系统
公开(公告)号：US06190732B1
公开(公告)日：2001-02-20
申请号：US09146486
申请日：1998-09-03
申请人： Thomas R. Omstead , Panya Wongsenakhum , William J. Messner , Edward J. Nagy , William Starks , Mehrdad M. Moslehi
发明人： Thomas R. Omstead , Panya Wongsenakhum , William J. Messner , Edward J. Nagy , William Starks , Mehrdad M. Moslehi
IPC分类号： C23C1634
CPC分类号： C23C16/45565 , C23C16/4408 , C23C16/4412 , C23C16/45521 , C23C16/45589 , C23C16/4585 , Y10S438/905
摘要： A method and system for fabricating a device on a substrate with a process gas, such as with chemical vapor deposition. A reaction chamber and support chuck cooperate to form a low conductance configuration for axisymetric process gas flow over the substrate and to form a high conductance configuration for enhanced evacuation of residual process gas from the reaction chamber upon completion of the process. A dual conductance chuck has an indented region that aligns with the exhaust port of the reaction chamber to restrict process gas flow in the low conductance configuration, and that moves distal a showerhead and the exhaust port to provide reduced restriction of process gas flow for reaction chamber evacuation. The chuck includes thermal control for enhancing film deposition on the substrate and for reducing residual film deposition on the chuck. An evacuation opening in the housing provides independent evacuation of residual gas from the housing. The present invention enhance throughput of device formation by reducing purge and process cycle times.
摘要翻译：一种用工艺气体（例如化学气相沉积）在衬底上制造器件的方法和系统。反应室和支撑卡盘配合以形成用于轴向测量工艺气体流过衬底的低电导结构，并且形成高电导配置，以在工艺完成时增强从反应室抽出残余工艺气体。双电导卡盘具有与反应室的排气口对准的缩进区域，以限制低导电构造中的工艺气体流动，并且在喷头和排气口的远端移动以减少对反应室的工艺气体流量的限制疏散。卡盘包括用于增强基板上的膜沉积并减少卡盘上的残留膜沉积的热控制。壳体中的排气开口可以从壳体中独立排出残留气体。本发明通过减少吹扫和处理循环时间来增强器件形成的生产能力。

58. 发明授权

US6136165A Apparatus for inductively-coupled-plasma-enhanced ionized physical-vapor deposition 失效
公开(公告)号：US6136165A
公开(公告)日：2000-10-24
申请号：US978933
申请日：1997-11-26
申请人： Mehrdad M. Moslehi
发明人： Mehrdad M. Moslehi
IPC分类号： C23C14/04 , C23C14/35 , C23C14/40 , C23C14/54 , H01J37/32 , H01J37/34 , C23C14/00
CPC分类号： H01J37/321 , C23C14/046 , C23C14/35 , C23C14/358 , C23C14/54 , H01J37/34
摘要： A system and related method are disclosed for performing inductively-coupled-plasma-enhanced ionized physical-vapor deposition process for depositing a material layer on a work piece such as a semiconductor substrate or a thin-film head substrate. Within a PVD process chamber, a plurality of inductive antenna segments axially surround a region between the PVD target/cathode assembly and the work piece. The inductive antenna segments are arranged cylindrically around (or conformlly with respect to the physical-vapor deposition target/cathode) and aligned substantially vertically with respect to the target/cathode assembly and/or the work piece. A first radio-frequency (RF) power source provides electrical power to half of the antenna segments to create a first inductively-coupled plasma source, a second RF power source provides electrical power to the remaining antenna segments to create a second inductively-coupled-plasma source. The two inductively-coupled-plasma sources are operated together to produce a multi-zone inductively-coupled-plasma source that generates a rotating inductively coupled magnetic field for uniform high-density PVD plasma generation. The system and method of this invention can be used to produce a much higher ionization ratio for the sputter species to allow ionized PVD collimation or programmable (adjustable) electrical collimation for improved step coverage and bottom coverage depositions on substrates with patterned high-aspect-ratio topography features. Moreover, the system and method of this invention can be used to perform PVD processes at reduced operating pressures (down to 0.1 mTorr or less) with stable ICP-assisted plasma generation. Furthermore, the system and method of this invention can be used to enable very repeatable depositions of ultrathin layers by providing a capability to generate and sustain a highly stable PVD plasma medium using a multi-zone ICP source and allowing the use of reduced PVD target power levels to enable reduced deposition rates.

59. 发明授权

US6106148A Apparatus including integral actuator with control for automated calibration of temperature sensors in rapid thermal processing equipment 失效
标题翻译：装置包括具有控制功能的集成执行器，用于快速热处理设备中温度传感器的自动校准
公开(公告)号：US6106148A
公开(公告)日：2000-08-22
申请号：US344419
申请日：1999-06-25
申请人： Mehrdad M. Moslehi , Yong Jin Lee
发明人： Mehrdad M. Moslehi , Yong Jin Lee
IPC分类号： G01J5/10 , G01J5/52 , G01K1/14 , G01K15/00 , F27D11/00 , H01L21/02
CPC分类号： G01K1/146 , G01J5/10 , G01J5/522 , G01K15/00
摘要： This invention presents an automatic calibration system and method for calibration of a substrate temperature sensor in a thermal processing equipment, such as a rapid thermal processing system. The calibration system includes a temperature-sensitive probe associated with the substrate temperature sensor to calibrate the substrate temperature sensor and an actuator to position the temperature-sensitive probe relative to the substrate during a calibration cycle. The actuator and temperature-sensitive probe of the automatic calibration system can be incorporated into the thermal processing equipment in order to maintain the thermal processing equipment cleanliness and integrity during a calibration cycle, and to allow rapid automated calibration. In the preferred embodiment of this invention, the temperature-sensitive probe and its actuator are implemented in the gas showerhead assembly of a rapid thermal processing system.
摘要翻译：本发明提出了一种用于在诸如快速热处理系统的热处理设备中校准衬底温度传感器的自动校准系统和方法。校准系统包括与衬底温度传感器相关联的温度敏感探针以校准衬底温度传感器，以及在校准周期期间相对于衬底定位温度敏感探针的致动器。自动校准系统的致动器和温度敏感探头可以并入热处理设备，以便在校准周期内保持热处理设备的清洁度和完整性，并允许快速自动校准。在本发明的优选实施例中，温度敏感探针及其致动器被实现在快速热处理系统的气体喷头组件中。

60. 发明授权

US6048782A Method for doped shallow junction formation using direct gas-phase doping 失效
标题翻译：使用直接气相掺杂的掺杂浅结形成方法
公开(公告)号：US6048782A
公开(公告)日：2000-04-11
申请号：US720892
申请日：1996-10-04
申请人： Mehrdad M. Moslehi
发明人： Mehrdad M. Moslehi
IPC分类号： H01L21/223 , H01L21/225 , H01L21/336 , H01L21/22 , H01L21/38
CPC分类号： H01L29/66575 , H01L21/223 , H01L21/2254 , Y10S438/918
摘要： Halides of a dopant species may be used as a dopant gas source to form shallow doped junctions using a direct gas-phase doping (GPD) process. These halides can also be combined with a carrier gas. Some advantages over conventional gas-phase doping processes include shallower junctions, shorter process times, lower processing temperature, and the elimination of a separate surface cleaning step for native oxide removal.
摘要翻译：可以使用掺杂剂物质的卤化物作为掺杂剂气体源，以使用直接气相掺杂（GPD）工艺形成浅掺杂结。这些卤化物也可以与载气组合。与常规气相掺杂方法相比，一些优点包括较浅的接合点，较短的加工时间，较低的加工温度以及消除用于自然氧化物去除的单独的表面清洁步骤。

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