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    • 51. 发明授权
    • Jitter measuring apparatus, jitter measuring method and test apparatus
    • 抖动测量装置,抖动测量方法和测试装置
    • US07778319B2
    • 2010-08-17
    • US11266472
    • 2005-11-04
    • Kiyotaka IchiyamaMasahiro IshidaYasuhide KuramochiTakahiro Yamaguchi
    • Kiyotaka IchiyamaMasahiro IshidaYasuhide KuramochiTakahiro Yamaguchi
    • H04B3/46
    • G01R31/31709
    • There is provided a jitter measuring apparatus for measuring jitter in a signal-under-measurement having a first pulse generator for detecting edges of the data-signal-under-measurement to output a first pulse signal having a pulse width set in advance corresponding to the edge, a second pulse generator for detecting boundaries of data sections where data values do not change in the data-signal-under-measurement to output a second pulse signal having a pulse width set in advance corresponding to timing of the detected boundaries of the data sections, a filter for removing carrier frequency components of said data-signal-under-measurement from first and second pulse signals and a jitter calculating section for calculating timing jitter in the data-signal-under-measurement based on the first and second pulse signals.
    • 提供了一种抖动测量装置,用于测量具有第一脉冲发生器的测量信号中的抖动,用于检测数据信号下测量的边沿,以输出具有预先对应于脉冲宽度设置的脉冲宽度的第一脉冲信号 边缘,第二脉冲发生器,用于检测在数据信号下测量中数据值不改变的数据段的边界,以输出具有预先设置的脉冲宽度的第二脉冲信号,该脉冲宽度对应于检测到的数据边界的定时 部分,用于从第一和第二脉冲信号中去除所述数据信号不足测量的载波频率分量的滤波器和用于基于第一和第二脉冲信号计算测量数据信号中的定时抖动的抖动计算部分 。
    • 54. 发明申请
    • Refrigeration System
    • 制冷系统
    • US20090013714A1
    • 2009-01-15
    • US12224420
    • 2007-03-06
    • Takahiro YamaguchiSatoshi IshikawaMasahiro YamadaKazuhiro Furusho
    • Takahiro YamaguchiSatoshi IshikawaMasahiro YamadaKazuhiro Furusho
    • F25B1/10
    • F04C23/001F04C18/02F04C18/045F04C18/322F04C23/008F04C29/0035F04C2270/03F04C2270/12F25B1/04F25B2400/075F25B2400/13
    • A compressor (20) is provided with compression mechanisms (61, 62) to have four compression chambers (61, 62, 63, 64) in total. In the compressor (20), the first compression chamber (61) and the second compression chamber (62) differ in the phase of capacity changing cycle from each other by 180° and the third compression chamber (63) and the fourth compression chamber (64) also differ in the phase of capacity changing cycle from each other by 180°. In a cylinder nonoperating mode, refrigerant is compressed in a single stage in each of the first compression chamber (61) and the second compression chamber (62) while the refrigerant compression operation is halted in the third compression chamber (63) and the fourth compression chamber (64). In a two-stage compression mode, refrigerant compressed in a single stage in each of the first compression chamber (61) and the second compression chamber (62) is further compressed in the third compression chamber (63) and the fourth compression chamber (64).
    • 压缩机(20)设置有压缩机构(61,62),其总共具有四个压缩室(61,62,63,64)。 在压缩机20中,第一压缩室61和第二压缩室62的容量变化周期的相位相差180°,第三压缩室63和第四压缩室( 64)在容量变化周期的相位相差180°时也不同。 在气缸非操作模式中,制冷剂在第一压缩室61和第二压缩室62的一个阶段中被压缩,同时制冷剂压缩操作在第三压缩室63中被停止,第四压缩 室(64)。 在两级压缩模式中,在第一压缩室61和第二压缩室62中的单级压缩的制冷剂在第三压缩室63和第四压缩室64中被进一步压缩 )。
    • 55. 发明申请
    • Semiconductor Integrated Circuit Switch Matrix
    • 半导体集成电路开关矩阵
    • US20080318370A1
    • 2008-12-25
    • US12110800
    • 2008-04-28
    • Tadahiro OhmiKoji KotaniKazuyuki MaruoTakahiro Yamaguchi
    • Tadahiro OhmiKoji KotaniKazuyuki MaruoTakahiro Yamaguchi
    • H01L21/336
    • H01L27/12H01L21/8221H01L27/0688Y10S257/903
    • There is provided a small-type semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a first semiconductor layer, a first semiconductor layer transistor formed in the first semiconductor layer, a wiring layer which is deposited on the first semiconductor layer and in which metal wires are formed, a second semiconductor layer deposited on the wiring layer and a second semiconductor layer transistor formed in the second semiconductor layer. It is noted that insulation of a gate insulating film of the first semiconductor layer transistor is almost equal with that of a gate insulating film of the second semiconductor layer transistor and the gate insulating film of the second semiconductor layer transistor is formed by means of radical oxidation or radical nitridation.
    • 提供电路面积小,布线长度短的小型半导体集成电路。 半导体集成电路构造为多层结构,并且设置有第一半导体层,形成在第一半导体层中的第一半导体层晶体管,布置在第一半导体层上并且其中金属线为 形成,沉积在布线层上的第二半导体层和形成在第二半导体层中的第二半导体层晶体管。 注意,第一半导体层晶体管的栅极绝缘膜的绝缘几乎等于第二半导体层晶体管的栅极绝缘膜的绝缘,并且通过自由基氧化形成第二半导体层晶体管的栅极绝缘膜 或自由基氮化。
    • 56. 发明授权
    • Spray nozzle
    • 喷嘴
    • US07461796B2
    • 2008-12-09
    • US11475056
    • 2006-06-27
    • Takahiro Yamaguchi
    • Takahiro Yamaguchi
    • B05B1/10
    • B05B1/04
    • A spray nozzle, with which the position at which the spray fluid strikes a target does not change, includes an ejection port elongated from side to side, a flow path formed cylindrical between a supply port and the ejection port, the flow path having a taper section formed at the middle thereof to reduce the flow path cross-sectional area gradually toward the ejection port. The taper section has upper and lower apex ends at an end portion on the ejection port side that are offset with respect to each other in the direction of the axis of the flow path.
    • 一种喷雾器,其中喷射液体撞击目标物的位置不改变,包括从一侧到另一侧伸长的喷射口,在供给口和喷射口之间形成为圆柱形的流路,该流路具有锥形 截面形成在其中间,以朝向喷射口逐渐减小流路横截面积。 锥形部分在喷射口侧的端部具有在流路的轴线方向上相对于彼此偏移的上顶端和下顶端。