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51. 发明授权

US07138629B2 Testing apparatus using charged particles and device manufacturing method using the testing apparatus 有权
标题翻译：使用带电粒子的测试装置和使用该测试装置的装置制造方法
公开(公告)号：US07138629B2
公开(公告)日：2006-11-21
申请号：US10754623
申请日：2004-01-12
申请人： Nobuharu Noji , Tohru Satake , Hirosi Sobukawa , Toshifumi Kimba , Masahiro Hatakeyama , Shoji Yoshikawa , Takeshi Murakami , Kenji Watanabe , Tsutomu Karimata , Kenichi Suematsu , Yutaka Tabe , Ryo Tajima , Keiichi Tohyama
发明人： Nobuharu Noji , Tohru Satake , Hirosi Sobukawa , Toshifumi Kimba , Masahiro Hatakeyama , Shoji Yoshikawa , Takeshi Murakami , Kenji Watanabe , Tsutomu Karimata , Kenichi Suematsu , Yutaka Tabe , Ryo Tajima , Keiichi Tohyama
IPC分类号： G21K7/00 , G21N23/99 , H01J37/28 , G01N23/225
CPC分类号： H01J37/20 , G01N23/2204 , G01N23/225 , H01J37/05 , H01J37/28 , H01J2237/202 , H01J2237/2441 , H01J2237/2446 , H01J2237/2801 , H01J2237/2817 , H01L21/6833 , H01L2223/54466
摘要： A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25•1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.
摘要翻译：提供了一种用于进一步提高速度的系统，即提高SEM型检查装置中的生产量。用于检查基板的表面的检查装置产生从电子束源25.1发射的电子的交叉，然后在样品W的方向上以期望的倍率形成图像以产生交叉。当交叉通过时，作为噪声的电子从具有孔的交叉点移除，进行调整，使得交叉成为平行电子束以以期望的分段形式照射基板。产生电子束，使照度不均匀为10％以下。由检测器25.11检测从样品W发射的电子。

52. 发明申请

US20060118719A1 Electron beam inspection system and inspection method and method of manufacturing devices using the system 有权
公开(公告)号：US20060118719A1
公开(公告)日：2006-06-08
申请号：US11290688
申请日：2005-12-01
申请人： Kenji Watanabe , Hirosi Sobukawa , Nobuharu Noji , Tohru Satake , Shoji Yoshikawa , Tsutomu Karimata , Mamoru Nakasuji , Masahiro Hatakeyama , Takeshi Murakami , Yuichiro Yamazaki , Ichirota Nagahama , Takamitsu Nagai , Kazuyoshi Sugihara
发明人： Kenji Watanabe , Hirosi Sobukawa , Nobuharu Noji , Tohru Satake , Shoji Yoshikawa , Tsutomu Karimata , Mamoru Nakasuji , Masahiro Hatakeyama , Takeshi Murakami , Yuichiro Yamazaki , Ichirota Nagahama , Takamitsu Nagai , Kazuyoshi Sugihara
IPC分类号： G21K7/00
CPC分类号： H01J37/28 , H01J37/224 , H01J37/244 , H01J2237/006 , H01J2237/20221 , H01J2237/2445 , H01J2237/2817
摘要： An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary electron optical system converges secondary electrons emitted from the sample. A detector converts the converged secondary electrons into an optical image through a fluorescent screen and focuses the image to a line sensor. A controller controls the charge transfer time of the line sensor at which the picked-up line image is transferred between each pair of adjacent pixel rows provided in the line sensor in association with the moving speed of a stage for moving the sample.

53. 发明授权

US07569838B2 Electron beam inspection system and inspection method and method of manufacturing devices using the system 有权
公开(公告)号：US07569838B2
公开(公告)日：2009-08-04
申请号：US12068484
申请日：2008-02-07
申请人： Kenji Watanabe , Hirosi Sobukawa , Nobuharu Noji , Tohru Satake , Shoji Yoshikawa , Tsutomu Karimata , Mamoru Nakasuji , Masahiro Hatakeyama , Takeshi Murakami , Yuichiro Yamazaki , Ichirota Nagahama , Takamitsu Nagai , Kazuyoshi Sugihara
发明人： Kenji Watanabe , Hirosi Sobukawa , Nobuharu Noji , Tohru Satake , Shoji Yoshikawa , Tsutomu Karimata , Mamoru Nakasuji , Masahiro Hatakeyama , Takeshi Murakami , Yuichiro Yamazaki , Ichirota Nagahama , Takamitsu Nagai , Kazuyoshi Sugihara
IPC分类号： H01J37/00 , H01J37/30
CPC分类号： H01J37/28 , H01J37/224 , H01J37/244 , H01J2237/006 , H01J2237/20221 , H01J2237/2445 , H01J2237/2817
摘要： An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary electron optical system converges secondary electrons emitted from the sample. A detector converts the converged secondary electrons into an optical image through a fluorescent screen and focuses the image to a line sensor. A controller controls the charge transfer time of the line sensor at which the picked-up line image is transferred between each pair of adjacent pixel rows provided in the line sensor in association with the moving speed of a stage for moving the sample.

54. 发明授权

US07351969B2 Electron beam inspection system and inspection method and method of manufacturing devices using the system 有权
标题翻译：电子束检查系统及使用该系统制造装置的检查方法和方法
公开(公告)号：US07351969B2
公开(公告)日：2008-04-01
申请号：US11290688
申请日：2005-12-01
申请人： Kenji Watanabe , Hirosi Sobukawa , Nobuharu Noji , Tohru Satake , Shoji Yoshikawa , Tsutomu Karimata , Mamoru Nakasuji , Masahiro Hatakeyama , Takeshi Murakami , Yuichiro Yamazaki , Ichirota Nagahama , Takamitsu Nagai , Kazuyoshi Sugihara
发明人： Kenji Watanabe , Hirosi Sobukawa , Nobuharu Noji , Tohru Satake , Shoji Yoshikawa , Tsutomu Karimata , Mamoru Nakasuji , Masahiro Hatakeyama , Takeshi Murakami , Yuichiro Yamazaki , Ichirota Nagahama , Takamitsu Nagai , Kazuyoshi Sugihara
IPC分类号： G21K7/00
CPC分类号： H01J37/28 , H01J37/224 , H01J37/244 , H01J2237/006 , H01J2237/20221 , H01J2237/2445 , H01J2237/2817
摘要： An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary electron optical system converges secondary electrons emitted from the sample. A detector converts the converged secondary electrons into an optical image through a fluorescent screen and focuses the image to a line sensor. A controller controls the charge transfer time of the line sensor at which the picked-up line image is transferred between each pair of adjacent pixel rows provided in the line sensor in association with the moving speed of a stage for moving the sample.
摘要翻译：图像投影型的电子束检查系统包括用于将从电子枪发射的电子束成形为矩形构造的一次电子光学系统，并将成形的电子束施加到要检查的样品表面。二次电子光学系统收敛从样品发射的二次电子。检测器通过荧光屏将会聚的二次电子转换成光学图像，并将图像聚焦到线传感器。一个控制器控制线传感器的电荷转移时间，该线传感器在行传感器中设置的每对相邻像素行之间与用于移动样本的平台的移动速度相关联地传送拾取线图像。

55. 发明授权

US06992290B2 Electron beam inspection system and inspection method and method of manufacturing devices using the system 有权
公开(公告)号：US06992290B2
公开(公告)日：2006-01-31
申请号：US09985317
申请日：2001-11-02
申请人： Kenji Watanabe , Hirosi Sobukawa , Nobuharu Noji , Tohru Satake , Shoji Yoshikawa , Tsutomu Karimata , Mamoru Nakasuji , Masahiro Hatakeyama , Takeshi Murakami , Yuichiro Yamazaki , Ichirota Nagahama , Takamitsu Nagai , Kazuyoshi Sugihara
发明人： Kenji Watanabe , Hirosi Sobukawa , Nobuharu Noji , Tohru Satake , Shoji Yoshikawa , Tsutomu Karimata , Mamoru Nakasuji , Masahiro Hatakeyama , Takeshi Murakami , Yuichiro Yamazaki , Ichirota Nagahama , Takamitsu Nagai , Kazuyoshi Sugihara
IPC分类号： H01J37/26
CPC分类号： H01J37/28 , H01J37/224 , H01J37/244 , H01J2237/006 , H01J2237/20221 , H01J2237/2445 , H01J2237/2817
摘要： An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary electron optical system converges secondary electrons emitted from the sample. A detector converts the converged secondary electrons into an optical image through a fluorescent screen and focuses the image to a line sensor. A controller controls the charge transfer time of the line sensor at which the picked-up line image is transferred between each pair of adjacent pixel rows provided in the line sensor in association with the moving speed of a stage for moving the sample.

56. 发明申请

US20080173814A1 Electron beam inspection system and inspection method and method of manufacturing devices using the system 有权
公开(公告)号：US20080173814A1
公开(公告)日：2008-07-24
申请号：US12068484
申请日：2008-02-07
申请人： Kenji Watanabe , Hirosi Sobukawa , Nobuharu Noji , Tohru Satake , Shoji Yoshikawa , Tsutomu Karimata , Mamoru Nakasuji , Masahiro Hatakeyama , Takeshi Murakami , Yuichiro Yamazaki , Ichirota Nagahama , Takamitsu Nagai , Kazuyoshi Sugihara
发明人： Kenji Watanabe , Hirosi Sobukawa , Nobuharu Noji , Tohru Satake , Shoji Yoshikawa , Tsutomu Karimata , Mamoru Nakasuji , Masahiro Hatakeyama , Takeshi Murakami , Yuichiro Yamazaki , Ichirota Nagahama , Takamitsu Nagai , Kazuyoshi Sugihara
IPC分类号： G01N23/00 , G21K5/04
CPC分类号： H01J37/28 , H01J37/224 , H01J37/244 , H01J2237/006 , H01J2237/20221 , H01J2237/2445 , H01J2237/2817
摘要： An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary electron optical system converges secondary electrons emitted from the sample. A detector converts the converged secondary electrons into an optical image through a fluorescent screen and focuses the image to a line sensor. A controller controls the charge transfer time of the line sensor at which the picked-up line image is transferred between each pair of adjacent pixel rows provided in the line sensor in association with the moving speed of a stage for moving the sample.

57. 发明申请

US20050253066A1 Electron beam apparatus 有权
标题翻译：电子束装置
公开(公告)号：US20050253066A1
公开(公告)日：2005-11-17
申请号：US10999124
申请日：2004-11-30
申请人： Kenji Watanabe , Tohru Satake , Mamoru Nakasuji , Takeshi Murakami , Tsutomu Karimata , Nobuharu Noji , Keiichi Tohyama , Masahiro Hatakeyama
发明人： Kenji Watanabe , Tohru Satake , Mamoru Nakasuji , Takeshi Murakami , Tsutomu Karimata , Nobuharu Noji , Keiichi Tohyama , Masahiro Hatakeyama
IPC分类号： G01N23/225 , H01J37/28
CPC分类号： H01J37/28 , G01N23/225 , H01J2237/24435
摘要： An electron beam apparatus is provided for evaluating a sample at a high throughput and a high S/N ratio. As an electron beam emitted from an electron gun is irradiated to a sample placed on an X-Y-θ stage through an electrostatic lens, an objective lens and the like, secondary electrons or reflected electrons are emitted from the sample. The primary electron beam is incident at an incident angle set at approximately 35° or more by controlling a deflector. Electrons emitted from the sample is guided in the vertical direction, and focused on a detector. The detector is made up of an MCP, a fluorescent plate, a relay lens, and a TDI (or CCD). An electric signal from the TDI is supplied to a personal computer for image processing to generate a two-dimensional image of the sample.
摘要翻译：提供一种用于以高通量和高S / N比来评估样品的电子束装置。当从电子枪发射的电子束通过静电透镜，物镜等照射到放置在X-Y-θ台上的样品时，从样品发射二次电子或反射电子。通过控制偏转器，一次电子束入射角约为35°以上的入射角。从样品发射的电子在垂直方向上被引导，并聚焦在检测器上。检测器由MCP，荧光板，中继透镜和TDI（或CCD）组成。来自TDI的电信号被提供给用于图像处理的个人计算机以产生样本的二维图像。

58. 发明授权

US07176459B2 Electron beam apparatus 有权
标题翻译：电子束装置
公开(公告)号：US07176459B2
公开(公告)日：2007-02-13
申请号：US10999124
申请日：2004-11-30
申请人： Kenji Watanabe , Tohru Satake , Mamoru Nakasuji , Takeshi Murakami , Tsutomu Karimata , Nobuharu Noji , Keiichi Tohyama , Masahiro Hatakeyama
发明人： Kenji Watanabe , Tohru Satake , Mamoru Nakasuji , Takeshi Murakami , Tsutomu Karimata , Nobuharu Noji , Keiichi Tohyama , Masahiro Hatakeyama
IPC分类号： H01J37/28 , G01N23/225
CPC分类号： H01J37/28 , G01N23/225 , H01J2237/24435
摘要： An electron beam apparatus is provided for evaluating a sample at a high throughput and a high S/N ratio. As an electron beam emitted from an electron gun is irradiated to a sample placed on an X-Y-θ stage through an electrostatic lens, an objective lens and the like, secondary electrons or reflected electrons are emitted from the sample. The primary electron beam is incident at an incident angle set at approximately 35° or more by controlling a deflector. Electrons emitted from the sample is guided in the vertical direction, and focused on a detector. The detector is made up of an MCP, a fluorescent plate, a relay lens, and a TDI (or CCD). An electric signal from the TDI is supplied to a personal computer for image processing to generate a two-dimensional image of the sample.
摘要翻译：提供一种用于以高通量和高S / N比来评估样品的电子束装置。当从电子枪发射的电子束通过静电透镜，物镜等照射到放置在X-Y-θ台上的样品时，从样品发射二次电子或反射电子。通过控制偏转器，一次电子束入射角约为35°以上的入射角。从样品发射的电子在垂直方向上被引导，并聚焦在检测器上。检测器由MCP，荧光板，中继透镜和TDI（或CCD）组成。来自TDI的电信号被提供给用于图像处理的个人计算机以产生样本的二维图像。

59. 发明申请

US20090014649A1 ELECTRON BEAM APPARATUS 审中-公开
标题翻译：电子束设备
公开(公告)号：US20090014649A1
公开(公告)日：2009-01-15
申请号：US11909409
申请日：2006-03-22
申请人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Toru Kaga , Hirosi Sobukawa , Takeshi Murakami , Tsutomu Karimata
发明人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Toru Kaga , Hirosi Sobukawa , Takeshi Murakami , Tsutomu Karimata
IPC分类号： G01N23/00
CPC分类号： H01J37/153 , H01J37/26 , H01J2237/1534 , H01J2237/2446 , H01J2237/28
摘要： Secondary electrons emitted from a sample (W) by an electron beam irradiation is deflected by a beam separator (77), and is deflected again in a perpendicular direction by an aberration correction electrostatic deflector (711) to form a magnified image on the principal plane of an auxiliary lens (712). The secondary electron beam diverged from the auxiliary lens (712) passes through axial chromatic aberration correction lenses (714-717) and images on a principal plane of an auxiliary lens (718) for a magnifying lens (719). The magnified image is formed in a position spaced apart from the optical axis. Therefore, when the secondary electron beam diverged from the auxiliary lens (712) is incident on the axial chromatic aberration correction lenses without any change, large abaxial aberration occurs. To avoid it, the auxiliary lens (712) is used to form the image of an NA aperture (724) in substantially a middle (723) in the light axis direction of the axial chromatic aberration correction lenses (714-717).
摘要翻译：通过电子束照射从样品（W）发射的二次电子被光束分离器（77）偏转，并通过像差校正静电偏转器（711）在垂直方向上再次偏转，以在主平面上形成放大图像的辅助透镜（712）。从辅助透镜（712）发散的二次电子束通过轴向色差校正透镜（714-717）和用于放大透镜（719）的辅助透镜（718）的主平面上的图像。放大图像形成在与光轴间隔开的位置。因此，当从辅助透镜（712）发散的二次电子束没有任何变化地入射到轴向色像差校正透镜时，发生大的背轴像差。为了避免这种情况，辅助透镜（712）用于在轴向色像差校正透镜（714-717）的光轴方向上形成基本上中间（723）中的NA孔径（724）的图像。

60. 发明授权

US07205540B2 Electron beam apparatus and device manufacturing method using same 失效
标题翻译：电子束装置及其制造方法
公开(公告)号：US07205540B2
公开(公告)日：2007-04-17
申请号：US11262844
申请日：2005-11-01
申请人： Mamoru Nakasuji , Takao Kato , Kenji Watanabe , Shoji Yoshikawa , Tohru Satake , Nobuharu Noji
发明人： Mamoru Nakasuji , Takao Kato , Kenji Watanabe , Shoji Yoshikawa , Tohru Satake , Nobuharu Noji
IPC分类号： G21K7/00 , H01J37/28 , H01L21/66 , G01N23/00
CPC分类号： B82Y10/00 , G01N23/225 , G01R31/307 , H01J37/242 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24507 , H01J2237/2817
摘要： An electron beam apparatus is provided for reliably measuring a potential contrast and the like at a high throughput in a simple structure. The electron beam apparatus for irradiating a sample, such as a wafer, formed with a pattern with an electron beam to evaluate the sample comprises an electron-optical column for accommodating an electron beam source, an objective lens, an E×B separator, and a secondary electron beam detector; a stage for holding the sample, and relatively moving the sample with respect to the electron-optical column; a working chamber for accommodating the stage and capable of controlling the interior thereof in a vacuum atmosphere; a loader for supplying a sample to the stage; a voltage applying mechanism for applying a voltage to the sample, and capable of applying at least two voltages to a lower electrode of the objective lens; and an alignment mechanism for measuring a direction in which dies are arranged on the sample. When the sample is evaluated, a direction in which the stage is moved is corrected to align with the direction in which the dies are arranged.
摘要翻译：提供电子束装置，用于以简单的结构以高通量可靠地测量电位对比度等。用于照射形成有电子束图案的晶片的样品（如晶片）以评估样品的电子束装置包括用于容纳电子束源的电子 - 光学柱，物镜，ExB分离器和次级电子束检测器用于保持样品的阶段，并相对于电子 - 光学柱相对移动样品; 用于容纳舞台并能够在真空气氛中控制其内部的工作室; 用于将样品供应到载物台的装载机; 电压施加机构，用于向样品施加电压，并且能够向物镜的下电极施加至少两个电压; 以及用于测量模具布置在样品上的方向的对准机构。当评估样品时，对载物台移动的方向进行校正，使其与模具的排列方向一致。

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